Domain size correlated magnetic properties and electrical impedance of size dependent nickel ferrite nanoparticles

We report here the investigations on the size dependent variation of magnetic properties of nickel ferrite nanoparticles. Nickel ferrite nanoparticles of different sizes (14 to 22 nm) were prepared by the sol-gel route at different annealing temperatures. They are characterized by TGA-DTA, XRD, SEM, TEM and Raman spectroscopy techniques for the confirmation of the temperature of phase formation, thermal stability, crystallinity, morphology and structural status of the nickel ferrite nanoparticles. The magnetization studies revealed that the saturation magnetization (M-s), retentivity (M-r) increase, while coercivity (H-c) and anisotropy (K-eff) decrease as the particle size increases. The observed value of M-s is found to be relatively higher for a particle size of 22 nm. In addition, we have estimated the magnetic domain size using magnetic data and correlated to the average particle size. The calculated magnetic domain size is closely matching with the particle size estimated from XRD. Impedance spectroscopy was employed to study the samples in an equivalent circuit to understand their transport phenomena. It shows that nickel ferrite nanoparticles exhibit a non-Debye behavior with increasing particle size due to the influence of increasing disorders, surface effects, grain size and grain boundaries, etc. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Analysis of absorption characteristics of stacked patch arrays on moderately lossy dielectric layers

It is demonstrated that a square patch array on a moderately lossy dielectric can be transformed into a near-perfect absorber by the addition of a metallic square loop layer between the patch array and the metal back. In this configuration, the condition of perfect absorption can be easily obtained by modifying loop dimensions. The absorption properties of this configuration are analyzed theoretically using an equivalent circuit model and full-wave electromagnetic simulations. Experimental investigations included a bistatic radar cross-section measurement, which ensured that there are no scattered fields in other directions. An array structure built on a commercially available FR4 substrate with copper metallization is used to experimentally validate these results.

Ferromagnetism and the effect of free charge carriers on electric polarization in the double perovskite Y2NiMnO6

The double perovskite Y2NiMnO6 displays ferromagnetic transition at T-c approximate to 81 K. The ferromagnetic order at low temperature is confirmed by the saturation value of magnetization (Ms) and also validated by the refined ordered magnetic moment values extracted from neutron powder diffraction data at 10 K. This way, the dominant Mn4+ and Ni2+ cationic ordering is confirmed. The cation-ordered P2(1)/n nuclear structure is revealed by neutron powder diffraction studies at 300 and 10 K. Analysis of the frequency-dependent dielectric constant and equivalent circuit analysis of impedance data take into account the bulk contribution to the total dielectric constant. This reveals an anomaly which coincides with the ferromagnetic transition temperature (T-c). Pyrocurrent measurements register a current flow with onset near T-c and a peak at 57 K that shifts with temperature ramp rate. The extrinsic nature of the observed pyrocurrent is established by employing a special protocol measurement. It is realized that the origin is due to reorientation of electric dipoles created by the free charge carriers and not by spontaneous electric polarization at variance with recently reported magnetism-driven ferroelectricity in this material.

Electrical and Plasmonic Properties of Ligand-Free Sn4+-Doped In2O3 (ITO) Nanocrystals

Sn4+-doped In2O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8nm, 10% Sn4+) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3)(3)OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around =1950nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (approximate to 35mcm(-1)). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.

A simple circuit to aid direct measurement of capture cross sections of deep level impurities

An inexpensive and simple circuit to aid the direct measurement of majority carrier capture cross sections of impurity levels in the band gap of a semiconductor by the variable width filling pulse technique is presented. With proper synchronisation, during the period of application of the pulse, the device is disconnected from the capacitance meter to avoid distortion of the pulse and is reconnected again to the meter to record the emission transient. Modes of operation include manual triggering for long emission transients, repetitive triggering for isothermal and DLTS measurements and the DLTS mode which is to be used with signal analysers that already provide a synchronising pulse for disconnection.

A simple firing delay control circuit for bridge converters

A simple ramp control firing circuit, suitable for use with fully controlled, line-commutated thyristor bridge circuits, is discussed here. This circuit uses very few components and generates the synchronized firing pulses in a simple way. It operates from a single 15 V Supply and has an inherent pulse inhibit facility. This circuit provides the synchronized firing pulses for both thyristors of the same limb in a bridge. To ensure reliability, wide triggering pulses are used, which are modulated to pass through the pulse transformers1 and demodulated before being fed to the thyristor gates. The use of throe such circuits only for a three-phase bridge is discussed.

Electrode kinetics of a nickel/cadmium cell and failure-mode prediction. Estimation of equivalent resistance of an internal short

A quantitative expression has been obtained for the equivalent resistance of an internal short in rechargeable cells under constant voltage charging.

A linear ramp control circuit using two LM 556 dual timers

A simple linear ramp control circuit, suitable for use with force-commutated thyrister circuits is discussed here. The circuit is based on only two IM 558 dual timer iCs, operating from a single 15 V supply. The reset terminals facilitate inhibition of the output of any stage. The use of this circuit in a thyristor chopper operating at 400 Hz 13 described.

A simple firing delay control circuit for bridge converters

A simple ramp control firing circuit, suitable for use with fully controlled, line-commutated thyristor bridge circuits, is discussed here. This circuit uses very few components and generates the synchronized firing pulses in a simple way. It operates from a single 15 V Supply and has an inherent pulse inhibit facility. This circuit provides the synchronized firing pulses for both thyristors of the same limb in a bridge. To ensure reliability, wide triggering pulses are used, which are modulated to pass through the pulse transformers1 and demodulated before being fed to the thyristor gates. The use of throe such circuits only for a three-phase bridge is discussed.

Continuously equivalent networks in state space

Schoeffler has derived continuously equivalent networks in the nodal-admittance domain. The letter derives a corresponding result in state space that combines the usefulness of Schoeffler's result and the power of the state-variable approach.

Determination of the optically equivalent model in three-dimensional photoelasticity

Any stressed photoelastic medium can be reduced to an optically equivalent model consisting of a linear retarder, with retardation 1 and principal axis at azimuth 1, and a pure rotator of power 2. The paper describes two simple methods to determine these quantities experimentally. Further, a method is described to overcome the problem of rotational effects in scattered-light investigations. This new method makes use of the experimentally determined characteristic parameters

Open-circuit potential-time transient of the magnesium anode

On interrupting polarisation, the magnesium anode exhibits a negative overshoot in potential followed by a slow recovery to a steady state value. A model has been proposed to explain the opencircuit potential-time transient in terms of a spontaneous passivation of the metal and the consequent changes in the corrosion potential. Theoretical expressions have been derived for the timedependence of the open-circuit electrode potential. Calculated, potential-time curves thus obtained are in qualitative agreement with experimental data. A possible application of this phenomenon to develop non-destructive quality control tests of Mg, Li and Al-based dry cells has been pointed out.

Implementation of placement and routing algorithms for computer aided design of printed circuit boards

The Printed Circuit Board (PCB) layout design is one of the most important and time consuming phases during equipment design process in all electronic industries. This paper is concerned with the development and implementation of a computer aided PCB design package. A set of programs which operate on a description of the circuit supplied by the user in the form of a data file and subsequently design the layout of a double-sided PCB has been developed. The algorithms used for the design of the PCB optimise the board area and the length of copper tracks used for the interconnections. The output of the package is the layout drawing of the PCB, drawn on a CALCOMP hard copy plotter and a Tektronix 4012 storage graphics display terminal. The routing density (the board area required for one component) achieved by this package is typically 0.8 sq. inch per IC. The package is implemented on a DEC 1090 system in Pascal and FORTRAN and SIGN(1) graphics package is used for display generation.

Equivalent rate 1/2 quasi-cyclic codes

Chen et al. [1] give a list of quasi-cyclic (2m,m) codes which have the largest minimum distance of any quasi-cyclic code, for various values ofm. We present the weight distribution of these codes. It will be seen that many of the codes found by Chen et al. [1] are equivalent in the sense of having identical weight distributions.