Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films

Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303–648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm−3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO3) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10−5–8 × 10−4 mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10−5 mbar showed the presence of Mo6+ and Mo5+ oxidation states of MoO3 and MoO3−x. The films deposited at oxygen partial pressure of 2 × 10−4 mbar showed Mo6+ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10−4 mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO3. The electrical conductivity of the films decreased from 3.6 × 10−5 to 1.6 × 10−6 Ω−1 cm−1, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10−5 to 8 × 10−4 mbar, respectively.

A Control Strategy for Reference Wave Adaptive Current Generation

Speed control of ac motors requires variable frequency, variable current, or variable voltage supply. Variable frequency supply can be obtained directly from a fixed frequency supply by using a frequency converter or from a dc source using inverters. In this paper a control technique for reference wave adaptive-current generation by modulating the inverter voltage is explained. Extension of this technique for three-phase induction-motor speed control is briefly explained. The oscillograms of the current waveforms obtained from the experimental setup are also shown.

Observation of the intense de-pairing effect in YBa2Cu3O7-delta due to the spin injection from La0.5Sr0.5CoO3

We report experimental evidence for a huge pair breaking effect induced by spin polarized quasiparticles in a YBa2Cu3O7-delta/La0.5Sr0.5CoO3 bi-layer fabricated by pulsed laser deposition. The temperature dependent magnetization measurements show evidence for the presence of both ferromagnetic and diamagnetic phases in the bi-layer. The current dependent electrical transport studies in the bi-layer exhibit a significant reduction in the superconducting transition temperature with the increase in applied current as compared to a single YBa2Cu3O7-delta layer and it follows a I-2/3 dependence in accordance with the pair breaking effect. Here, we find that the current driven from a ferromagnetic electrode with low spin polarization, such as La0.5Sr0.5CoO3 (-11%), into the superconductor can act as a strong pair breaker. This indicates that the spin polarization of the injecting electrode is not the only criterion in determining the pair breaking effect, rather the transparency of the interface for the spin polarization may also be significant. More interestingly, the spin diffusion length for YBa2Cu3O7-delta has a much longer length scale than that reported earlier in the study of ferromagnetic/superconducting heterostructures.

Low-frequency resistance fluctuations in metal films under current stressing at low temperature (T<0.3Tmelting)

In this paper, we report a systematic study of low frequency 1∕fα resistance fluctuation in thin metal films (Ag on Si) at different stages of damage process when the film is subjected to high current stressing. The resistance fluctuation (noise) measurement was carried out in situ using a small ac bias that has been mixed with the dc stressing current. The experiment has been carried out as a function of temperature in the range of 150–350 K. The experiment establishes that the current stressed film, as it undergoes damage due to various migration forces, develops an additional low-frequency noise spectral power that does not have the usual 1∕f spectral shape. The magnitude of extra term has an activated temperature dependence (activation energy of ≈0.1 eV) and has a 1∕f1.5 spectral dependence. The activation energy is the same as seen from the temperature dependence of the lifetime of the film. The extra 1∕f1.5 spectral power changes the spectral shape of the noise power as the damage process progress. The extra term likely arising from diffusion starts in the early stage of the migration process during current stressing and is noticeable much before any change can be detected in simultaneous resistance measurements. The experiment carried out over a large temperature range establish a strong correlation between the evolution of the migration process in a current stressed film and the low-frequency noise component that is not a 1∕f noise.

Space-charge limited conduction in doped polypyrrole devices

Doping dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out on polypyrrole devices in metal-polymer-metal sandwich structure. Temperature dependent I-V measurements infer that space-charge limited conduction (SCLC) with exponential trap distribution is appropriate for the moderately doped samples, whereas trap-free SCLC is observed in lightly doped samples. Trap densities and energies are estimated, the effective mobility is calculated using the Poole-Frenkel model, and the mobility exhibits thermally activated behavior. Frequency dependent capacitance-voltage characteristics show a peak near zero bias voltage, which implies that these devices are symmetric with a negligible barrier height at the metal-polymer interface. Low frequency capacitance measurements have revealed a negative capacitance at higher voltages due to the processes associated with the injection and redistribution of space-charges. (C) 2010 American Institute of Physics.

A unified model for auxiliary switch commutated DC-DC converters

A novel ZVS auxiliary switch commutated variation for all DGDC converter topologies has been proposed in 2006. With proper designation of the circuit variables (throw current I and the pole voltage V), all these converters are seen to be governed by an identical set of equations. With idealized switches, the steady-state performance is obtainable in an analytical form. The conversion ratio of the converter topologies is obtained. A generalized equivalent circuit emerges for all these converters from the steady-state conversion ratio. It also provides a dynamic model as well. With these generalized steady-state equivalent circuits, small signal analysis of these converters may be carried out readily. It enables one to use the familiar state space averaged results of the standard PWM DGDC converters for the resonant counterparts. Th dc and ac models reveals that dc and low frequency behaviour of the proposed family of converters is similiar to that of its PWM parent

Dielectric and dc electrical studies of antiferroelectric lead zirconate thin films

Antiferroelectric lead zirconate thin films were deposited using KrF (248 nm) excimer laser ablation technique. Utilization of antiferroelectric materials is proposed in high charge storage capacitors and microelectromechanical (MEMs) devices. The antiferroelectric nature of lead zirconate thin films was confirmed by the presence of double hysteresis behavior in polarization versus applied field response. By controlling the processing parameters, two types of microstructures evolved, namely columnar (or in-situ) and multi-grained (or ex-situ) in PZ thin films. The dielectric and electrical properties of the lead zirconate thin films were studied with respect to the processing parameters. Analysis on charge transport mechanism, using space charge limited conduction phenomenon, showed the presence of both shallow and deep trap sites in the PZ thin films. The estimated shallow trap energies were 0.448 and 0.491 eV for in-situ and ex-situ films, with respective concentrations of approximate to 7.9 x 10(18)/cc and approximate to 2.97 x 10(18)/cc. The deep trap energies with concentrations were 1.83 eV with 1.4 x 10(16)/cc for ex-situ and 1.76 eV with 3.8 x 10(16)/cc for in-situ PZ thin films, respectively. These activation energies were found to be consistent with the analysis from Arrhenius plots of de current densities. (C) 2000 Elsevier Science S.A. All rights reserved.

Transfer of saline tolerance from one strain of rice to another by injection of DNA

Direct injection of genomic DNA from salt tolerant cv. Pokkali into developing floral tillers on IR20 produced transgenic seeds similar to Pokkali in husk colour and which germinated well in 0.2 M NaCl and had a 4-6-fold higher proline content.

A Resonant Integrator Based PLL and AC Current Controller for Single Phase Grid Connected PWM-VSI

Grid connected PWM-VSIs are being increasingly used for applications such as Distributed Generation (DG), power quality, UPS etc. Appropriate control strategies for grid synchronisation and line current regulation are required to establish such a grid interconnection and power transfer. Control of three phase VSIs is widely reported in iterature. Conventionally, dq control in Synchronous Reference Frame(SRF) is employed for both PLL and line current control where PI-controllers are used to track the DC references. Single phase systems do not have defined direct (d) and quadrature (q) axis components that are required for SRF transformation. Thus, references are AC in nature and hence usage of PI controllers cannot yield zero steady state errors. Resonant controllers have the ability to track AC references accurately. In this work, a resonant controller based single phase PLL and current control technique are being employed for tracking grid frequency and the AC current reference respectively. A single phase full bridge converter is being operated as a STATCOM for performance evaluation of the control scheme.

Influence of the ferromagnetic layer on the pair breaking and low alternating current field magnetic response in superconductor/ferromagnet bilayer

We investigate the influence of the ferromagnetic layer on the magnetic and transport properties of YBa2Cu3O7-delta in YBa2Cu3O7-delta (YBCO)/La0.7Sr0.3MnO3 (LSMO) bilayers. The temperature dependent dc magnetization study reveals the presence of magnetic anisotropy in YBCO/LSMO bilayer as compared to the pure YBCO layer. The ac susceptibility study on YBCO/LSMO bilayers reveals stronger pinning and the temperature dependent critical current is found to be less prone to temperature. Besides, the current (I) dependent electrical transport studies on YBCO/LSMO exhibit a significant reduction in the superconducting T-c with increase in I and it follows I-2/3 dependence in accord with the pair breaking effect. The higher reduction of superconducting T-c in YBCO/LSMO is believed to be due to the enhanced pair-breaking induced by the spin polarized carriers being injected into the superconductor. (C) 2011 American Institute of Physics. doi: 10.1063/1.3560029]

Synthetic aperture radar: A focus on current problems

Synthetic aperture radar (SAR) is a powerful tool for mapping and remote sensing. The theory and operation of SAR have seen a period of intense activity in recent years. This paper attempts to review some of the more advanced topics studied in connection with modern SAR systems based on digital processing. Following a brief review of the principles involved in the operation of SAR, attention is focussed on special topics such as advanced SAR modelling and focussing techniques, in particular clutterlock and autofocus, Doppler centroid (DC) estimation methods involving seismic migration technique, moving target imaging, bistatic radar imaging, effects of system nonlinearities, etc.

Tracking and erosion resistance of silicone rubber nanocomposites under positive and negative dc voltages

ASTM D2303 standard provides a method for evaluating the tracking and erosion resistance of polymeric insulators under ac voltages. In this paper, the above method has been extended for evaluating the performance of the insulators under dc stresses. Tests were conducted on polymeric silicone rubber (SR) insulators under positive and negative dc stresses. Micron sized Alumina trihydrate (uATH) and nano sized Alumina (nALU) were used as fillers in SR matrix to improve the resistance to tracking and erosion. Results suggest that SR composites perform better under negative dc than under positive dc voltages. Eroded mass and leakage current data support the above result. Samples with low concentration of nano alumina fillers performed on par with the samples with large loadings of uATH.

A Multilevel inverter structure with cascaded two level and three level inverters for IM drive with CMV elimination and DC link capacitor voltage balancing

Common mode voltage (CMV) variations in PWM inverter-fed drives generate unwanted shaft and bearing current resulting in early motor failure. Multilevel inverters reduce this problem to some extent, with higher number of levels. But the complexity of the power circuit increases with an increase in the number of inverter voltage levels. In this paper a five-level inverter structure is proposed for open-end winding induction motor (IM) drives, by cascading only two conventional two-level and three-level inverters, with the elimination of the common mode voltage over the entire modulation range. The DC link power supply requirement is also optimized by means of DC link capacitor voltage balancing, with PWM control, using only inverter switching state redundancies. The proposed power circuit gives a simple power bus structure.

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO(2) thin films by DC magnetron sputtering

Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.