Review on Tin (II) Sulfide (SnS) Material: Synthesis, Properties, and Applications

Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure.In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.

High frequency millimetre wave absorbers derived from polymeric nanocomposites

The world has dominated by automation, wireless communication and various electronic equipments, which has led to the most undesirable offshoots like electromagnetic (EM) pollution. The rationale is environmental concern and the necessity to develop EM absorbing materials. This paper reviews the state of the art of designing polymer based nanocomposites containing nanoscopic particles with high electrical conductivity and complex microwave properties for enhanced EM attenuation. Given the brevity of this review article, herein we have summarized the high frequency millimetre wave absorbing properties of polymer nanocomposites consisting of various nanoparticles that either reflect or absorb microwave radiation like electrically conducting carbon nanotubes (CNTs) and graphene nanosheets (GNs), high dielectric constant ceramic nanoparticles that show relaxation loss in the microwave frequency and magnetic metal and ferrite nanoparticles that absorb microwave radiation through natural resonance, eddy current and hysteresis losses. Furthermore, we have stressed the necessity and impact of hybrid nanoparticles consisting of magnetic and dielectric nanoparticles along with conducting inclusions like CNT and GNs in this review. Electromagnetic interference (EMI) theory and necessary criterion for attenuation has been briefly discussed. The emphasis is made on various mechanisms towards EM attenuation controlled by these nanoparticles. Various structures developed using polymer nanocomposites like bulk, foam and layered structures and their effect on EM attenuation has been elaborately discussed. In addition, various covalent/non-covalent modifications on nanoparticles have been juxtaposed in context to EM attenuation. In addition, we have highlighted important facets and direction for enhancing the microwave attenuation. (C) 2016 Elsevier Ltd. All rights reserved.