Origin of carrier-type reversal in Pb-Ge-Se glasses: A detailed thermal, electrical, and structural study

A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb-Ge-Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0-20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band structures of Ge-Se glasses has been considered. The p -->n transition has been attributed to the energetic disposition of the sp(3)d(2) band of Pb atoms, which is located closely above the lone pair band of selenium. This feature makes Pb unique in the context of p -->n transition of chalcogenide glasses. The model can be extended successfully to account for the CTR behavior observed in Bi containing chalcogenide glasses also.

Thermal crystallization behaviour of Ge-Te-Se glasses

Ge10Te90-xSex (50 less than or equal to x less than or equal to 70) and Ge20Te80-xSex (x = 30, 50) glasses have been prepared by melt-quenching The thermal crystallization behaviour of these samples has been studied by Differential Scanning Calorimetry (DSC), in order to characterise these glasses for memory-threshold switching applications. It is found that Ge10Te90-xSex glasses have higher thermal stability and are more stable against devitrification. These samples may be suitable for threshold switching devices. Ge20Te80-xSex glasses, on the other hand, phase separate on heating and exhibit a double stage crystallization. Based on this, it can be expected that Ge20Te80-xSex samples will show memory behaviour. The activation energy for thermal crystallization of a representative Ge10Te40-xSe50 glass belonging to the Ge10Te90-xSex series has been found by the Kissinger's method to be 0.92 eV. The value of the activation energy obtained also indicates that Ge10Te90-xSex samples are less prone to devitrification and more suitable for threshold behaviour.