Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.

Experimental investigation of forming limit, void coalescence and crystallographic textures of aluminum alloy 8011 sheet annealed at various temperatures

In this work, a combined forming and fracture limit diagram, fractured void coalescence and texture analysis have been experimentally evaluated for the commercially available aluminum alloy Al 8011 sheet annealed at different temperatures viz. 200 degrees C, 250 degrees C, 300 degrees C and 350 degrees C. The sheets were examined at different annealing temperatures on microstructure, tensile properties, formability and void coalescence. The fractured surfaces of the formed samples were examined using scanning electron microscope (SEM) and these images were correlated with fracture behavior and formability of sheet metals. Formability of Al 8011 was studied and examined at various annealing temperatures using their bulk X-ray crystallographic textures and ODF plots. Forming limit diagrams, void coalescence parameters and crystallographic textures were correlated with normal anisotropy of the sheet metals annealed at different temperatures. (C) 2013 Politechnika Wroclawska. Published by Elsevier Urban & Partner Sp. z o.o. All rights reserved.