774 resultados para AK-3569


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Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time. (C) 1996 American Institute of Physics.

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Intramolecular gamma-hydrogen abstraction reactions were examined in pentane-2-one and 2-methyl-1-pentene in their lowest triplet states using the AM1 semi-empirical molecular orbital method with the complete geometry optimization in the unrestricted Hartree-Fock frame. The results reveal that the oxygen atom of the carbonyl group and the end carbon atom of the olefinic bond acquire high free valence and spin density indices in their respective lowest triplet states, leading to abstraction of hydrogen from the gamma-position relative to the carbonyl and olefinic bonds. The theoretical energy profiles fit with a polynomial and the probability of tunneling of hydrogen was estimated by the WKB (Wentzel, Kramer and Brillouin) method. The results, after thermal averaging of the rate constants, reveal that tunneling of hydrogen is significant at room temperature.

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The coexistence of quasicrystals and rational approximant structures (RAS) has been observed in melt-spun Al80Cr14Si6, Al80Mn14Si6 and Al75Mn10Cr5Si10 alloys. The presence of a b.c.c. alpha-AlMnSi phase in Al-Mn-Si and alpha-AlMnSi(Cr) phase in Al-Mn-Cr-Si has been seen. A multiple twinning around an irrational axis of the RAS has been reported in an aggregate of fine size cubic crystallites in all three alloys. Selected area diffraction patterns show that the crystalline aggregate symmetry is linked to the icosahedral point group symmetry (m35). Various ways of expressing the twin relationship in the cubic crystalline aggregates have been discussed. The thermal stability of the icosahedral phase at high temperatures reveals that the icosahedral phase in Al-Mn-Si and Al-Mn-Cr-Si alloys transforms to alpha-AlMnSi at temperatures of 690 and 670 K, respectively. In Al-Cr-Si alloy, heating to a high temperature (615 K) leads to the transformation of the icosahedral phase into a new metastable phase having an ordered cubic structure equivalent to alpha-AlMnSi. The occurrence of multiple twinning leading to icosahedral symmetry in the as-spun Al-Cr-Si alloy is presumably due to this metastable phase. Copyright (C) 1996 Acta Metallurgica Inc.

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The principle of the conservation of bond orders during radical-exchange reactions is examined using Mayer's definition of bond orders. This simple intuitive approximation is not valid in a quantitative sense. Ab initio results reveal that free valences (or spin densities) develop on the migrating atom during reactions. For several examples of hydrogen-transfer reactions, the sum of the reaction coordinate bond orders in the transition state was found to be 0.92 +/- 0.04 instead of the theoretical 1.00 because free valences (or spin densities) develop on the migrating atom during reactions. It is shown that free valence is almost equal to the square of the spin density on the migrating hydrogen atom and the maxima in the free valence (or spin density) profiles coincide (or nearly coincide) with the saddle points in the corresponding energy profiles.

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In this paper we propose to study the evolution of the quantum corrections to the conductivity in an oxide system as we approach the metal-insulator (M-I) transition from the metallic side. We report here the measurement of the low-temperature (0.1 K0.65), m takes on large values and ?(0)=0. We explain the temperature dependence of ?(T), for T<2 K, on the metallic side (x?0.4), as arising predominantly from electron-electron interactions, taking into account the diffusion-channel contribution (which gives m=0.5) as well as the Cooper-channel contribution. In this regime, the correction to conductivity, ??(T), is a small fraction of ?(T). However, as the M-I transition is approached (x?xc), ??(T) starts to dominate ?(T) and the above theories fail to explain the observed ?(T).

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High pressure Raman scattering studies have been carried out on cesium periodate (CsIO4) using the diamond anvil cell. Three pressure-induced phase transitions occur in the range 0.1�12 GPa as indicated by abrupt changes in the Raman spectra, and pressure dependence of the phonon frequencies. The transitions are observed at 1.5, 4.5 and 6.2 GPa in the increasing pressure cycle. A large hysteresis is noticed for the reverse transition when releasing the pressure. The high pressure phase is nearly quenchable to ambient pressure. The nature of the pressure-induced transitions are discussed in terms of the sequence of pressure-induced transitions expected for scheelite-pseudoscheelite structure ABO4 compounds from crystal chemical considerations. For the softening of the two high frequency internal modes, a pressure-induced electronic change involving the 5 d states of cesium and 5 p states of iodine is invoked.

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We report here the results of structural and vibrational studies on the solid solution Fe1 ? xNixPS3 (1 greater-or-equal, slanted x greater-or-equal, slanted 0) systems. From the structural analysis, we show that there is a lattice compaction as the composition x is varied from 0 to 1, the basic lattice symmetry being maintained. We find that the compaction is more in the basal plane. These subtle structural changes are also reflected in the vibrational bands. We observed splitting of certain bands due to these small changes in the lattice constants, which we explained as arising from a correlation splitting. These changes in the vibrational bands have also been seen on cooling where there is a preferential thermal compaction in the basal plane compared to that perpendicular to the plane.

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The Norrish type II processes of methyl-2,2-dimethyl- cyclopropyl ketone, alpha-alkoxy acetones and alkyl pyruvates have been examined using the AM1 semi-empirical molecular orbital method with complete geometry optimization at the partial configuration interaction level in the restricted Hartree-Fock (RHF) frame. The results reveal that the methyl-substituted cyclopropyl ketone has a constrained geometry favourable for hydrogen abstraction from the gamma-position relative to the carbonyl group in the excited singlet state. The presence of the ether oxygen atom in the beta-position relative to the carbonyl group in alkoxy acetones and alkyl pyruvates leads to increased reactivity relative to alkyl monoketones and diketones respectively. The cyclization of 1:4 biradicals has been studied in the unrestricted Hartree-Fock (UHF) frame, and the results reveal that the 1:4 biradical derived from alkoxy acetones readily cyclizes to form oxetanols. On the other hand, in the 1:4 biradicals derived from methyl-substituted cyclopropyl ketone, the three-membered ring breaks readily to form an enol intermediate. Delocalization of an odd electron in 1:4 biradicals derived from alkyl pyruvates is thought to make cyclization difficult.

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Current-potential characteristics are obtained numerically for a lone-adsorbate-mediated anodic charge transfer at the electrode-solution interface. An increase in the overpotential leads to the appearance of maxima in the anodic current-potential plots instead of the extended activationless region (i.e. a saturation current at large positive overpotentials) predicted by the direct heterogeneous outer-sphere anodic charge transfer process. A detailed analysis of the dependence of current-potential profiles and other kinetic parameters on various system parameters is also presented.

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A general kind of Brownian vortices is demonstrated by applying an external nonconservative force field to a colloidal particle bound by a conservative optical trapping force at a liquid-air interface. As the liquid medium is translated at a constant velocity with the bead trapped at the interface, the drag force near the surface provides enough rotational component to bias the particle's thermal fluctuations in a circulatory motion. The interplay between the thermal fluctuations and the advection of the bead in constituting the vortex motions is studied, and we infer that the angular velocity of the circulatory motion offers a comparative measure of the interface fluctuations.

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The internal resistance of a stabilized alpha-nickel hydroxide electrode is found to be lower than that of a beta-nickel hydroxide electrode as shown from studies of the open-circuit potential-time transients at all states-of-charge. Nevertheless, the self-discharge rates of the former is higher. Gasometric studies reveal that the charging efficiency of the alpha-nickel hydroxide electrode is higher than that of the beta-nickel hydroxide electrode.

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Raman experiments have been carried out on single crystals of BaTiO3 as a function of pressure up to 3.5 GPa across the ferroelectric (tetragonal) to paraelectric (cubic) phase transition. The unusual features in the Raman spectra associated with the interference effects due to coupling of the three A1(TO) phonons are studied quantitatively to obtain the pressure dependence of the line shape parameters and the coupling constants. The frequencies of the middle and highest-frequency modes as well as the linewidth of the middle mode show interesting pressure dependence.

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We report Raman studies on powder samples of the charge transfer complex (TTF)(x)C60Br8 at room temperature. The phonons show considerable softening with respect to the frequencies observed in the Raman spectrum of solid C60Br8. The strongest mode at 1464 cm(-1) in C60Br8 is red shifted to a doublet with peaks at 1414 and 1421 cm(-1), implying an average phonon softening Delta omega of -47 cm(-1). A comparison with the phonon softening of the corresponding A(g)(2) mode in alkali-doped C-60 (Delta omega similar to -36 cm(-1) for A(6)C(60), A = K, Rb or Cs) suggests that 8 electrons are transferred per C60Br8 molecule in the charge transfer complex. The mode at 503 cm(-1) in C60Br8 is shifted upwards, similar to that in A(6)C(60) compounds.

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Reactions of cyanide radicals with alkanes have been investigated by ab initio methods. It is found that the potential energy surface for reaction of CN with a primary C-H bond in methane has a small positive barrier while reactions of CN with a secondary and a tertiary C-H bond in alkanes are barrierless at the correlated level. A simple explanation for the obtained negative temperature dependence of rate constants for reactions of CN with a secondary and a tertiary C-H bond in alkanes are given in terms of the collision theory of bimolecular reactions. It is shown that for barrierless reactions the negative temperature dependence of the rate constants is attributed to the variation of the pre-exponential factor with temperature.

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Oxides of the La1-xPbxMnO3 system show giant magnetoresistance around 300 K. In La1-xPbxMnO3 the magnitude of the magnetoresistance (MR) at 320 K is 85% at 6 T and it is nearly temperature independent over a temperature range 40-320 K. All the compositions (0.1 less than or equal to x less than or equal to 0.5) show a peak in resistivity around 300-340 K and the magnitude of the MR also shows a peak around the same temperatures. This investigation suggests how to hole dope LaMnO3 in order to achieve maximum MR around 300 K so that these materials can have practical applications.