Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor

Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with A(g) symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with B-g symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving pi and sigma bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.

Electromagnetic Shielding Properties of Nano Carbon Filled Silicone Rubber Composites

Electromagnetic shielding has become important for various electrical systems because of the electromagnetic pollution caused by the large scale use of electronic devices operating at different frequencies and power levels. Traditionally used metallic shields lack flexibility and hence may not be the right choice for certain applications. In such situations, filled polymer composites provide a good alternative for electromagnetic shielding applications. Being polymer based, they are easy to manufacture and can be molded into the required geometry and shape. In this study, the shielding properties of multiwalled carbon nanotubes and carbon nanofibers filled silicone rubber are studied. The conductivity and the shielding effectiveness of the composites were measured at different filler loadings. Both the fillers are able to make the base polymer conducting even at very low filler loadings. The conductivity and the shielding effectiveness improved when the filler loading was above the percolation threshold.