Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

Numerical prediction of nozzle flow separation: Issue of turbulence modeling

Numerical simulation of separated flows in rocket nozzles is challenging because existing turbulence models are unable to predict it correctly. This paper addresses this issue with the Spalart-Allmaras and Shear Stress Transport (SST) eddy-viscosity models, which predict flow separation with moderate success. Their performances have been compared against experimental data for a conical and two contoured subscale nozzles. It is found that they fail to predict the separation location correctly, exhibiting sensitivity to the nozzle pressure ratio (NPR) and nozzle type. A careful assessment indicated how the model had to be tuned for better, consistent prediction. It is learnt that SST model's failure is caused by limiting of the shear stress inside boundary layer according to Bradshaw's assumption, and by over prediction of jet spreading rate. Accordingly, SST's coefficients were empirically modified to match the experimental wall pressure data. Results confirm that accurate RANS prediction of separation depends on the correct capture of the jet spreading rate, and that it is feasible over a wide range of NPRs by modified values of the diffusion coefficients in the turbulence model. (C) 2015 Elsevier Masson SAS. All rights reserved.

Global Response Sensitivity Analysis of Randomly Excited Dynamic Structures

The response of structural dynamical systems excited by multiple random excitations is considered. Two new procedures for evaluating global response sensitivity measures with respect to the excitation components are proposed. The first procedure is valid for stationary response of linear systems under stationary random excitations and is based on the notion of Hellinger's metric of distance between two power spectral density functions. The second procedure is more generally valid and is based on the l2 norm based distance measure between two probability density functions. Specific cases which admit exact solutions are presented, and solution procedures based on Monte Carlo simulations for more general class of problems are outlined. Illustrations include studies on a parametrically excited linear system and a nonlinear random vibration problem involving moving oscillator-beam system that considers excitations attributable to random support motions and guide-way unevenness. (C) 2015 American Society of Civil Engineers.

Effect of applied pressure on densification of monolithic ZrCx ceramic by reactive hot pressing

The effect of applied pressure on reactive hot pressing (RHP) of zirconium (Zr):graphite (C) in molar ratios of 1:0.5, 1:0.67, 1:0.8, and 1:1 was studied at 1200 degrees C for 60 min. The relative density achievable increased with increasing pressure and ranged from 99% at 4 MPa for ZrC0.5 to 93% for stoichiometric ZrC at 100 MPa. The diminishing influence of pressure on the final density with increasing stoichiometry is attributed to two causes: the decreasing initial volume fraction of the plastically deforming Zr metal which leads to the earlier formation of a contiguous, stress shielding carbide skeleton and the larger molar volume shrinkage during reaction which leads to pore formation in the final stages. A numerical model of the creep densification of a dynamically evolving microstructure predicts densities that are consistent with observations and confirm that the availability of a soft metal is primarily responsible for the achievement of such elevated densification during RHP. The ability to densify nonstoichiometric compositions like ZrC0.5 at pressures as low as 4 MPa offers an alternate route to fabricating dense nonstoichiometric carbides.

Simultaneous enhancement of electrical conductivity and thermopower in Bi2S3 under hydrostatic pressure

The inverse coupled dependence of electrical conductivity and thermopower on carrier concentration presents a big challenge in achieving a high figure of merit. However, the simultaneous enhancement of electrical conductivity and thermopower can be realized in practice by carefully engineering the electronic band structure. Here by taking the example of Bi2S3, we report a simultaneous increase in both electrical conductivity and thermopower under hydrostatic pressure. Application of hydrostatic pressure enables tuning of electronic structure in such a way that the conductivity effective mass decreases and the density of states effective mass increases. This dependence of effective masses leads to simultaneous enhancement in electrical conductivity and thermopower under n-type doping leading to a huge improvement in the power factor. Also lattice thermal conductivity exhibits very weak pressure dependence in the low pressure range. The large power factor together with low lattice thermal conductivity results in a high ZT value of 1.1 under n-type doping, which is nearly two times higher than the previously reported value. Hence, this pressure-tuned behaviour can enable the development of efficient thermoelectric devices in the moderate to high temperature range. We further demonstrate that similar enhancement can be observed by generating chemical pressure by doping Bi2S3 with smaller iso-electronic elements such as Sb at Bi sites, which can be achieved experimentally.