Neuroprotective activity of Wedelia calendulacea on cerebral ischemia/reperfusion induced oxidative stress in rats

Objective: This study was undertaken to evaluate the neuroprotective activity of Wedelia calendulacea against cerebral ischemia/reperfusion induced oxidative stress in the rats. Materials and Methods: The global cerebral ischemia was induced in male albino Wistar rats by occluding the bilateral carotid arteries for 30 min followed by 1 h and 4 h reperfusion. At various times of reperfusion, the histopathological changes and the levels of malondialdehyde (MDA), glutathione peroxidase (GPx), glutathione reductase (GR), glutathione-s-transferase (GST), and hydrogen peroxide (H(2)O(2)) activity and brain water content were measured. Results: The ischemic changes were preceded by increase in concentration of MDA, hydrogen peroxide and followed by decreased GPx, GR, and GST activity. Treatment with W. calendulacea significantly attenuated ischemia-induced oxidative stress. W. calendulacea administration markedly reversed and restored to near normal level in the groups pre-treated with methanolic extract (250 and 500 mg/kg, given orally in single and double dose/day for 10 days) in dose-dependent way. Similarly, W. calendulacea reversed the brain water content in the ischemia reperfusion animals. The neurodegenaration also conformed by the histopathological changes in the cerebral-ischemic animals. Conclusion: The findings from the present investigation reveal that W. calendulacea protects neurons from global cerebral-ischemic injury in rat by attenuating oxidative stress.

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]

Analysis of light‐induced processes in bacteriorhodopsin and its application for spatial light modulation

A simplified energy‐level scheme is proposed for the photochemical cycle of the bacteriorhodopsin molecule. Rate equations are solved for the detailed light‐induced processes based on this model and the intensity‐induced population densities in various states of the molecule at steady state are computed which are used to obtain an analytic expression for the absorption coefficient of the modulation beam. Modulation of the probe laser‐beam transmission by the modulation‐laser‐beam intensity‐induced population changes is analyzed. It is predicted that for a probe beam at 412 nm up to 82% modulation can be achieved using a laser beam intensity of 3.2 W/cm2 at 570 nm. For temperatures ∼77 K, the transmission at 610 nm can be switched from zero to 81% for modulating laser intensity of 11 W/cm2. Construction of a spatial light modulator based on bacteriorhodopsin molecules is proposed and some of its features are discussed.

Field-induced dielectric properties of laser ablated antiferroelectric (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)0.98O3 thin films

Niobium-modified lead zirconate stannate titanate antiferroelectric thin films with the chemical composition of (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)0.98O3 were deposited by pulsed excimer laser ablation technique on Pt-coated Si substrates. Field-induced phase transition from antiferroelectric to ferroelectric properties was studied at different fields as a function of temperature. The field forced ferroelectric phase transition was elucidated by the presence of double-polarization hysteresis and double-butterfly characteristics from polarization versus applied electric field and capacitance and voltage measurements, respectively. The measured forward and reverse switching fields were 25 kV/cm and 77 kV/cm, respectively. The measured dielectric constant and dissipation factor were 540 and 0.001 at 100 kHz, respectively, at room temperature.

Alloying induced degradation of the absorption edge of InAsxSb1-x

InAsxSb1−x alloys show a strong bowing in the energy gap, the energy gap of the alloy can be less than the gap of the two parent compounds. The authors demonstrate that a consequence of this alloying is a systematic degradation in the sharpness of the absorption edge. The alloy disorder induced band-tail (Urbach tail) characteristics are quantitatively studied for InAs0.05Sb0.95.

Evidence for decoupled two-dimensional vortex behavior of YBa2Cu3O7-δ in La0.7Sr0.3MnO3/YBa2Cu3O7-δ/La0.7Sr0.3MnO3 trilayer

We investigate the vortex behavior of YBa2Cu3O7−δ thin films sandwiched between two ferromagnetic layers (La0.7Sr0.3MnO3/YBa2Cu3O7−δ/La0.7Sr0.3MnO3). The magnetization study on La0.7Sr0.3MnO3/YBa2Cu3O7−δ/La0.7Sr0.3MnO3 trilayers conspicuously shows the presence of both ferromagnetic and diamagnetic phases. The magnetotransport study on the trilayers reveals a significant reduction in the activation energy (U) for the vortex motion in YBa2Cu3O7−δ. Besides, the “U” exhibits a logarithmic dependence on the applied magnetic field which directly indicates the existence of decoupled two-dimensional (2D) pancake vortices present in the CuO2 layers. The evidence of 2D decoupled vortex behavior in La0.7Sr0.3MnO3/YBa2Cu3O7−δ/La0.7Sr0.3MnO3 is believed to arise from (a) the weakening of superconducting coherence length along the c-axis and (b) enhanced intraplane vortex–vortex interaction due to the presence of ferromagnetic layers.

Colossal electroresistance and current induced switching in ferromagnetic insulating state of La0.82Ca0.18MnO3

Colossal electroresistance and current induced resistivity switching have been measured in the ferromagnetic insulating (FMI) state of single crystal manganite La0.82Ca0.18MnO3. The sample has a Curie transition temperature TC = 165 K and the FMI state is realized for temperatures T<100 K. The electroresistance (ER), arising from a strong nonlinear resistivity, attains a large value ( ≈ 100%) in the FMI state. However, this is accompanied by a collapse of the magnetoresistance (MR) to a small value even in magnetic field (H) of 10 T. This demonstrates that the mechanisms that give rise to ER and MR are effectively decoupled.

Influence of two photon absorption induced free carriers on coherent polariton and phonon generation in ZnTe crystals

Combination of femtosecond Kerr, two photon absorption, and impulsive stimulated Raman scattering (ISRS) experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in 〈110〉 cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two photon induced free carriers on the creation of both the polaritons and phonons is largest at 4 K where the free carrier lifetime is enhanced. The temperature dependant ISRS on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X).

Optical diffraction of second-harmonic signals in the LiBO2-Nb2O5 glasses induced by self-organized LiNbO3 crystallites

The nanocrystallites ( ≈ 3 nm) of LiNbO3, evolved in the (100−x)LiBO2-xNb2O5 (5x20, in molar ratio) glass system exhibited intense second-harmonic signals in transmission mode when exposed to infrared (IR) light at λ = 1064 nm. The second-harmonic waves were found to undergo optical diffraction which was attributed to the presence of self-organized submicrometer-sized LiNbO3 crystallites that were grown within the glass matrix along the parallel damage fringes created by the IR laser radiation. Micro-Raman studies carried out on the laser-irradiated samples confirmed the self-organized crystallites to be LiNbO3.

Laser‐Induced Turbulence

In a recent experiment on laser beam transmission through an absorbing gas, the critical Reynold's number for the flow, induced by the heating of the gas, to become turbulent was found to be less than 30, which is many orders of magnitude smaller than that for pure shear flow in pipes. It is shown here that a Rayleigh number is the more appropriate criterion to characterize the stability of flow in this situation, and its value estimated in two limiting cases is found to bracket the expected critical Rayleigh number for vertical concentric cylinders.

Temperature-pressure-induced solid-solid < 100 > to < 110 > reorientation in FCC metallic nanowire: a molecular dynamic study

Atomistic simulation of initial < 100 > oriented FCC Cu nanowires shows a novel coupled temperature-pressure dependent reorientation from < 100 > to < 110 > phase. A temperature-pressure-induced solid-solid < 100 > to < 110 > reorientation diagram is generated for Cu nanowire with varying cross-sectional sizes. A critical pressure is reported for Cu nanowires with varying cross-sectional sizes, above which an initial < 100 > oriented nanowire shows temperature independent reorientation into the < 110 > phase. The effect of surface stresses on the < 100 > to < 110 > reorientation is also studied. The results indicate that above a critical cross-sectional size for a given temperature-pressure, < 100 > to < 110 > reorientation is not possible. It is also reported here that for a given applied pressure, an increase in temperature is required for the < 100 > to < 110 > reorientation with increasing cross-sectional size of the nanowire. The temperature-pressure-induced solid-solid < 100 > to < 110 > reorientation diagram reported in the present paper could further be used as guidelines for controlling the reorientations/shape memory in nano-scale applications of FCC metallic nanowires.

l-pGlu-(2-propyl)-l-His-l-ProNH2 attenuates 4-aminopyridine-induced epileptiform activity and sodium current: a possible action of new thyrotropin-releasing hormone analog for its anticonvulsant potential

L-PGlu-(2-proPyl)-L-His-L-ProNH(2) (NP-647) is a CNS active thyrotropin-releasing hormone (TRH) analog with potential application in various CNS disorders including seizures. In the present study, mechanism of action for protective effect of NP-647 was explored by studying role of NP-647 on epileptiform activity and sodium channels by using patch-clamp methods. Epileptiform activity was induced in subicular pyramidal neurons of hippocampal slice of rat by perfusing 4-aminopyridine (4-AP) containing Mg(+2)-free normal artificial cerebrospinal fluid (nACSF). Increase in mean firing frequency was observed after perfusion of 4-AP and zero Mg(+2) (2.10+/-0.47 Hz) as compared with nACSF (0.12+/-0.08 Hz). A significant decrease in mean firing frequency (0.61+/-0.22 Hz), mean frequency of epileptiform events (0.03+/-0.02 Hz vs. 0.22+/-0.05 Hz of 4-AP+0 Mg), and average number of action potentials in paroxysmal depolarization shift-burst (2.54+/-1.21 Hz vs. 8.16+/-0.88 Hz of 4-AP +0 Mg) was observed. A significant reduction in peak dV/dt (246+/-19 mV ms(-1) vs. 297 18 mV ms-1 of 4-AP+0 Mg) and increase (1.332+/-0.018 ms vs. 1.292+/-0.019 ms of 4-AP+0 Mg) in time required to reach maximum depolarization were observed indicating role of sodium channels. Concentration-dependent depression of sodium current was observed after exposure to dorsal root ganglion neurons to NP-647. NP-647 at different concentrations (1, 3, and 10 mu M) depressed sodium current (15+/-0.5%, 50+/-2.6%, and 75+/-0.7%, respectively). However, NP-647 did not show change in the peak sodium current in CNa18 cells. Results of present study demonstrated potential of NP-647 in the inhibition of epileptiform activity by inhibiting sodium channels indirectly. (C) 2011 IBRO. Published by Elsevier Ltd. All rights reserved.

Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

In the present work, we report the growth of wurtzite InN epilayers on GaN/Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The growth parameters such as indium flux, substrate temperature and RF power affect the crystallographic and morphological properties of InN layers, which were evaluated using high resolution X-ray diffraction (HRXRD) analysis and atomic force microscopy (AFM). It is found that excess indium (In) concentrations and surface roughness were increased with increase in In flux and growth temperature. The intensity of HRXRD (0 0 0 2) peak, corresponding to c-axis orientation has been increased and full width at half maxima (FWHM) has decreased with increase in RF power. It was found that highly c-axis oriented InN epilayers can be grown at 450 degrees C growth temperature, 450 W RF power and 1.30 x 10(-7) mbar In beam equivalent pressure (BEP). The energy gap of InN layers grown by optimizing growth conditions was determined by photoluminescence and optical absorption measurement. (C) 2011 Elsevier B.V. All rights reserved.

A Review of Photo-Induced Inter-Diffusion in Nano-Layered Chalcogenide Films

Abstract | A growing interest in the research of chalcogenide glasses can be currently witnessed, which to a large extent is caused by newly opened fields of applications for these materials. Applications in the field of micro- and opto-electronics, xerography and lithography, acousto-optic and memory switching devices and detectors for medical imaging seem to be most remarkable. Accordingly, photo induced phenomena in chalcogenide glasses are attracting much interest. These phenomena can be found both in uniform thin films as well as multilayered films. Among amorphous multilayers, chalcogenide multilayers are attractive because of the potential it has for tailoring the optical properties. I will be presenting some basic idea of photoinduced effects followed by the diffusion mechanisms of Se, Sb and Bi in to As2S3 films.

Passive vibration isolation of reaction wheel disturbances using a low frequency flexible space platform

Reaction wheel assemblies (RWAs) are momentum exchange devices used in fine pointing control of spacecrafts. Even though the spinning rotor of the reaction wheel is precisely balanced to minimize emitted vibration due to static and dynamic imbalances, precision instrument payloads placed in the neighborhood can always be severely impacted by residual vibration forces emitted by reaction wheel assemblies. The reduction of the vibration level at sensitive payloads can be achieved by placing the RWA on appropriate mountings. A low frequency flexible space platform consisting of folded continuous beams has been designed to serve as a mount for isolating a disturbance source in precision payloads equipped spacecrafts. Analytical and experimental investigations have been carried out to test the usefulness of the low frequency flexible platform as a vibration isolator for RWAs. Measurements and tests have been conducted at varying wheel speeds, to quantify and characterize the amount of isolation obtained from the reaction wheel generated vibration. These tests are further extended to other variants of similar design in order to bring out the best isolation for given disturbance loads. Both time and frequency domain analysis of test data show that the flexible beam platform as a mount for reaction wheels is quite effective and can be used in spacecrafts for passive vibration control. (C) 2011 Elsevier Ltd. All rights reserved.