Evolution of ferromagnetism from a frustrated state in LixNi(2-x)O2 (0.67 < x < 0.98)

Two-dimensional triangular-lattice antiferromagnetic systems continue to be an interesting area in condensed matter physics and LiNiO2 is one such among them. Here we present a detailed experimental magnetic study of the quasi-stoichiometric LixNi2-xO2 system (0.67

Morphological and electrochemical characterization of electrodeposited Zn-Ag nanoparticle composite coatings

Silver nanoparticles with an average size of 23 nm were chemically synthesized and used to fabricate Zn-Ag composite coatings. The Zn-Ag composite coatings were generated by electrodeposition method using a simple sulfate plating bath dispersed with 0.5, land 1.5 g/l of Ag nanoparticles. Scanning electron microscopy, X-ray diffraction and texture co-efficient calculations revealed that Ag nanoparticles appreciably influenced the morphology, micro-structure and texture of the deposit. It was also noticed that agglomerates of Ag nanopartides, in the case of high bath load conditions, produced defects and dislocations on the deposit surface. Ag nanoparticles altered the corrosion resistance property of Zn-Ag composite coatings as observed from Tafel polarization, electrochemical impedance analysis and an immersion test. Reduction in corrosion rate with increased charge transfer resistance was observed for Zn-Ag composite coatings when compared to a pure Zn coating. However, the particle concentration in the plating bath and their agglomeration state directly influenced the surface morphology and the subsequent corrosion behavior of the deposits. (C) 2013 Elsevier Inc. All rights reserved.

Thermoelectric properties of Fe(0.2)Co(3.8)Sbi(12-x)Te(x) skutterudites

Skutterudites Fe(0.)2Co(3.8)Sb(12),Te-x (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were synthesized by induction melting at 1273 K, followed by annealing at 923 K for 144 h. X-ray powder diffraction and electron microprobe analysis confirmed the presence of the skutterudite phase as the main phase. The temperature-dependent transport properties were measured for all the samples from 300 to 818 K. A positive Seebeck coefficient (holes are majority carriers) was obtained in Fe0.2Co3.8Sb 12 in the whole temperature range. Thermally excited carriers changed from n-type to p-type in Fe(0.)2Co(3.8)Sb(12),Te-x 19Te0.1 at 570 K, while in all the other samples, Fe(0.)2Co(3.8)Sb(12),Te-x (x = 0.2, 0.3, 0.4, 0.5, 0.6) exhibited negative Seebeck coefficients in the entire temperature range measured. Whereas for the alloys up to x = 0.2 (Fe(0.)2Co(3.8)Sb(12),Te-x ) the electrical resistivity decreased by charge compensation, it increased for x> 0.2 with an increase in Te content as a result of an increase in the electron concentration. The thermal conductivity decreased with Te substitution owing to carrier phonon scattering and point defect scattering. The maximum dimensionless thermoelectric figure of merit, ZT = 1.04 at 818 K, was obtained with an optimized Te content for Fe0.2Co3.8Sb1 1.5Te0.5 and a carrier concentration of,,J1/ =- 3.0 x 1020 CM-3 at room temperature. Thermal expansion (a = 8.8 x 10-6 K-1), as measured for Fe(0.)2Co(3.8)Sb(12),Te-x , compared well with that of undoped Co4Sb12. A further increase in the thermoelectric figure of merit up to ZT = 1.3 at 820 K was achieved for Fe(0.)2Co(3.8)Sb(12),Te-x , applying severe plastic deformation in terms of a high-pressure torsion process. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Electrocaloric Effect in 0.85PMN-0.15PT Thin Films Deposited by Pulsed Laser Deposition

The electrocaloric effect (ECE) of 0.85PbMg(1/3)Nb(2/3)O(3-)0.15PbTiO(3) (0.85PMN-0.15PT) thin films deposited on (111) Pt/TiO2/SiO2/Si substrate by pulsed laser deposition (PLD) has been calculated. The reversible adiabatic temperature was calculated indirectly using the Maxwell's relation Delta T = -T/C rho integral(E2)(E1) (partial derivative P/partial derivative T)(sigma,E)dE. Permittivity and P-E measurements show an anomaly at 11 degrees C on heating only. This anomaly previously reported are claimed to arise due to the PNR depolarization upon heating. The absence of this anomaly during cooling suggests that no structural phase transition takes place. A negative electrocaloric effect is observed which is explained by the increase in the entropy term.

Transport properties of CuIn1-xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics

CuIn1-xAlxSe2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (Delta(SO)) and crystal field (Delta(CF)) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn1-xAlxSe2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A. M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 x 10(-3) A in the dark at 1 V to 3 x 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity R-lambda similar to 920 A W-1, sensitivity S similar to 9.0, specific detectivity D* similar to 3 x 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

Hydrothermal synthesis of Gd2O3:Eu3+ nanophosphors: Effect of surfactant on structural and luminescence properties

Various morphologies of Eu3+ activated gadolinium oxide have been prepared by hydrothermal method using hexadecylamine (HDA) as surfactant at different experimental conditions. The powder X-ray diffraction studies reveal as-formed product is hexagonal Gd(OH)(3):Eu3+ phase and subsequent heat treatment at 350 and 600 degrees C transforms to monoclinic GdOOH:Eu3+ and cubic Gd2O3:Eu3+ phases respectively. SEM pictures of without surfactant show irregular shaped rods along with flakes. However, in the presence of HDA surfactant, the particles are converted into rods of various sizes. The temperature dependent morphological evolution of Gd2O3:Eu3+ without and with HDA surfactant is studied. TEM micrographs of Gd(OH)(3):Eu3+ sample with HDA confirms smooth nanorods with various diameters in the range 20-100 nm. FTIR studies reveal that HDA surfactant plays an important role in conversion of cubic to hexagonal phases. Among these three phases, cubic phase Gd2O3:Eu3+ (lambda(ex) = 254 nm) show red emission at 612 nm corresponding to D-5(0)-> F-7(2) and is more efficient host than the monoclinic counterpart. The band gap for hexagonal Gd(OH)(3):Eu3+ is more when compared to monoclinic GdOOH:Eu3+ and cubic Gd2O3:Eu3+. (C) 2013 Elsevier B. V. All rights reserved.

Effect of the Addition of B2O3 on the Density, Microstructure, Dielectric, Piezoelectric and Ferroelectric Properties of K0.5Na0.5NbO3 Ceramics

Boron oxide (B2O3) addition to pre-reacted K0.5Na0.5NbO3 (KNN) powders facilitated swift densification at relatively low sintering temperatures which was believed to be a key to minimize potassium and sodium loss. The base KNN powder was synthesized via solid-state reaction route. The different amounts (0.1-1 wt%) of B2O3 were-added, and ceramics were sintered at different temperatures and durations to optimize the amount of B2O3 needed to obtain KNN pellets with highest possible density and grain size. The 0.1 wt% B2O3-added KNN ceramics sintered at 1,100 A degrees C for 1 h exhibited higher density (97 %). Scanning electron microscopy studies confirmed an increase in average grain size with increasing B2O3 content at appropriate temperature of sintering and duration. The B2O3-added KNN ceramics exhibited improved dielectric and piezoelectric properties at room temperature. For instance, 0.1 wt% B2O3-added KNN ceramic exhibited d (33) value of 116 pC/N which is much higher than that of pure KNN ceramics. Interestingly, all the B2O3-added (0.1-1 wt%) KNN ceramics exhibited polarization-electric field (P vs. E) hysteresis loops at room temperature. The remnant polarization (P (r)) and coercive field (E (c)) values are dependent on the B2O3 content and crystallite size.

On the absence of shear cracking and grain boundary cavitation in secondary tensile regions of Ti-6Al-4V-0.1B alloy during hot (alpha plus beta)-compression

Deformation instabilities, such as shear cracking and grain boundary cavitation, which are observed in the secondary tensile region of Ti-6Al-4V alloy during compressive deformation in the (+)-phase field, do not form in Ti-6Al-4V-0.1B alloy when processed under the same conditions. This has been attributed to the microstructural modifications, e.g. the absence of grain boundary and adjacent grain boundary retained layers and a lower proportion of 90(o)-misoriented -colonies that occur with boron addition.

Crystallographic texture and microstructure evolution during hot compression of Ti-6Al-4V-0.1B alloy in the (alpha plus beta)-regime

Microstructure and texture are known to undergo drastic modifications due to trace hypoeutectic boron addition (similar to 0.1wt.%) for various titanium alloys e.g. Ti-6Al-4V. The deformation behaviour of such an alloy Ti-6Al-4V-0.1B is investigated in the (+) phase field and compared against that of the base alloy Ti-6Al-4V studied under selfsame conditions. The deformation microstructures for the two alloys display bending and kinking of lamellae in near and softening via globularization of lamella in near phase regimes, respectively. The transition temperature at which pure slip based deformation changes to softening is lower for the boron added alloy. The presence of TiB particles is largely held attributable for the early softening of Ti-6Al-4V-0.1B alloy. The compression texture of both the alloys carry signature of pure phase defamation at lower temperature and phase transformation near the transus temperature. Texture is influenced by a complex interplay of the deformation and transformation processes in the intermediate temperature range. The contribution from phase transformation is prominent for Ti-6Al-4V-0.1B alloy at comparatively lower temperature.

Asymptotics of Harish-Chandra expansions, bounded hypergeometric functions associated with root systems, and applications

A series expansion for Heckman-Opdam hypergeometric functions phi(lambda) is obtained for all lambda is an element of alpha(C)*. As a consequence, estimates for phi(lambda) away from the walls of a Weyl chamber are established. We also characterize the bounded hypergeometric functions and thus prove an analogue of the celebrated theorem of Helgason and Johnson on the bounded spherical functions on a Riemannian symmetric space of the noncompact type. The L-P-theory for the hypergeometric Fourier transform is developed for 0 < p < 2. In particular, an inversion formula is proved when 1 <= p < 2. (C) 2013 Elsevier Inc. All rights reserved.

The effect of multisubstitution on the thermoelectric properties of chalcogenide-based Cu2.1Zn0.9Sn1-xInxSe4 (0 <= x <= 0.1)

Quinary chalcogenide compounds Cu2.1Zn0.9Sn1-xInxSe4 (0 <= x <= 0.1) were prepared by melting (1170K) followed by annealing (773 K) for 172 h. Powder X-ray diffraction (XRD) data accompanied by electron probe microanalysis (EPMA) and Raman spectra of all the samples confirmed the formation of a tetragonal kesterite structure with Cu2FeSnS4-type. The thermoelectric properties of all the samples were measured as a function of temperature in the range of 300-780K. The electrical resistivity of all the samples exhibits metallic-like behavior. The positive values of the Seebeck coefficient and the Hall coefficient reveal that holes are the majority charge carriers. The codoping of copper and indium leads to a significant increase of the electrical resistivity and the Seebeck coefficient as a function of temperature above 650 K. The thermal conductivity of all the samples decreases with increasing temperature. Lattice thermal conductivity is not significantly modified as the doping content may infer negligible mass fluctuation scattering for copper/zinc and indium/tin substitution. Even though, the power factors (S-2/rho) of indium-doped samples Cu2.1Zn0.9Sn1-xInxSe4 (x = 0.05, 0.075) are almost the same, the maximum zT = 0.45 at 773K was obtained for Cu2.1Zn0.9Sn0.925In0.075Se4 due to its smaller value of thermal conductivity. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Evolution of Nanocrystalline Ba2NaNb5O15 in 2BaO-0.5Na(2)O-2.5Nb(2)O(5)-4.5B(2)O(3) Glass System and Its Refractive Index and Band Gap Tunability

Monophasic Ba2NaNb5O15 was crystallized at nanometer scale (12-36 nm) in 2BaO-0.5Na(2)O-2.5Nb(2)O(5)- 4.5B(2)O(3) glass system. To begin with, optically transparent glasses, in this system, were fabricated via the conventional melt. quenching technique. The amorphous and glassy characteristics of the as-quenched samples were respectively confirmed by X-ray powder diffraction and differential thermal analyses. Nearly homogeneous distribution of Ba2NaNb5O15 (BNN) nanocrystals associated with tungsten bronze structure akin to their bulk parent structure was accomplished by subjecting the as-fabricated glasses to appropriate heat-treatment temperatures. Indeed transmission electron microscopy (TEM) carried out on these samples corroborated the presence of Ba2NaNb5O15 nanocrystals dispersed in a continuous glass matrix. The as-quenched glasses were similar to 75% transparent in the visible range of the electromagnetic spectrum. The optical band gap and refractive index were found to have crystallite size (at nanoscale) dependence. The optical band gap increased with the decrease in crystallite size. The refractive indices of the glass nanocrystal composites as determined by Brewster angle method were rationalized using different empirical models. The refractive index dispersion with wavelength of light was analyzed on the basis of the Sellmeier relations. At room temperature under UV excitation (355 nm) these glass nanocrystal composites displayed violet-blue emission which was ascribed to the defects states.

Electronic structure of Nd1-xYxMnO3 from Mn K edge absorption spectroscopy and DFT methods

The electronic structure of Nd1-xYxMnO3 (x-0-0.5) is studied using x-ray absorption near-edge structure (XANES) spectroscopy at the Mn K-edge along with the DFT-based LSDA+U and real space cluster calculations. The main edge of the spectra does not show any variation with doping. The pre-edge shows two distinct features which appear well-separated with doping. The intensity of the pre-edge decreases with doping. The theoretical XANES were calculated using real space multiple scattering methods which reproduces the entire experimental spectra at the main edge as well as the pre-edge. Density functional theory calculations are used to obtain the Mn 4p, Mn 3d and O 2p density of states. For x=0, the site-projected density of states at 1.7 eV above Fermi energy shows a singular peak of unoccupied e(g) (spin-up) states which is hybridized Mn 4p and O 2p states. For x=0.5, this feature develops at a higher energy and is highly delocalized and overlaps with the 3d spin-down states which changes the pre-edge intensity. The Mn 4p DOS for both compositions, show considerable difference between the individual p(x), p(y) and p(z)), states. For x=0.5, there is a considerable change in the 4p orbital polarization suggesting changes in the Jahn-Teller effect with doping. (C) 2013 Elsevier Ltd. All rights reserved.

Autocatalytic duplex Ni-P/Ni-W-P coatings on AZ31B magnesium alloy

Autocatalytic duplex Ni-P/Ni-W-P coatings were deposited on AZ31B magnesium alloy using stabilizer free nickel carbonate bath. Some of the coated specimens were passivated in chromate solution with and without heat treatment. Plain Ni-P coatings were also prepared for comparison. Coatings were characterized for their surface morphology, composition and corrosion resistance. Energy dispersive analysis of X-ray (EDX) showed that the phosphorous content in the Ni-P coating is 6 wt.% and for Ni-W-P it reduced to 3 wt.% due to the codeposition of tungsten in the Ni-P coating. Marginal increase in P and W contents was observed on passivated coupons along with Cr (0.18 wt.%) and O (2.8 wt.%) contents. Field emission scanning electron microscopy (FESEM) examination of these coating surfaces exhibited the nodular morphology. Chromate passivated surfaces showed the presence of uniformly distributed bright Ni particles along with nodules. Potenfiodynamic polarization and electrochemical impedance spectroscopy (EIS) studies were carried out in deaerated 0.15 M NaCI solution to find out the corrosion resistance of the coatings. Among the coatings developed, duplex-heat treated-passivated (duplex-HIP) coatings showed lower corrosion current density (i(corr)) and higher polarization resistance (R-p) indicating the improved corrosion resistance. The charge transfer resistance (R-ct) value obtained for the duplex-HIP was about 170 times higher compared to that for Ni P coating. (c) 2013 Elsevier B.V. All rights reserved.

Direct hexagonal transition of amorphous (Ge2Sb2Te5)(0.9)Se-0.1 thin films

Ge2Sb2Te5 (GST) is well known for its phase change properties and applications in memory and data storage. Efforts are being made to improve its thermal stability and transition between amorphous and crystalline phases. Various elements are doped to GST to improve these properties. In this work, Se has been doped to GST to study its effect on phase change properties. Amorphous GST film crystallized in to rock salt (NaCl) type structure at 150 degrees C and then transformed to hexagonal structure at 250 degrees C. Interestingly, Se doped GST ((GST)(0.9)Se-0.1) film crystallized directly into hexagonal phase and the intermediate phase of NaCl is not observed. The crystallization temperature (T-c) of (GST)(0.9)Se-0.1 is around 200 degrees C, which is 50 degrees C higher than the T-c of GST. For (GST)(0.9)Se-0.1, the threshold switching occurs at about 4.5V which is higher than GST (3 V). Band gap (E-opt) values of as deposited films are calculated from Tauc plot which are 0.63 eV for GST and 0.66 eV for (GST)(0.9)Se-0.1. The E-opt decreases for the films annealed at higher temperatures. The increased T-c, E-opt, the contrast in resistance and the direct transition to hexagonal phase may improve the data readability and thermal stability in the Se doped GST film. (C) 2014 AIP Publishing LLC.