623 resultados para Silver Films


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For an n(t) transmit, n(r) receive antenna system (n(t) x n(r) system), a full-rate space time block code (STBC) transmits at least n(min) = min(n(t), n(r))complex symbols per channel use. The well-known Golden code is an example of a full-rate, full-diversity STBC for two transmit antennas. Its ML-decoding complexity is of the order of M(2.5) for square M-QAM. The Silver code for two transmit antennas has all the desirable properties of the Golden code except its coding gain, but offers lower ML-decoding complexity of the order of M(2). Importantly, the slight loss in coding gain is negligible compared to the advantage it offers in terms of lowering the ML-decoding complexity. For higher number of transmit antennas, the best known codes are the Perfect codes, which are full-rate, full-diversity, information lossless codes (for n(r) >= n(t)) but have a high ML-decoding complexity of the order of M(ntnmin) (for n(r) < n(t), the punctured Perfect codes are considered). In this paper, a scheme to obtain full-rate STBCs for 2(a) transmit antennas and any n(r) with reduced ML-decoding complexity of the order of M(nt)(n(min)-3/4)-0.5 is presented. The codes constructed are also information lossless for >= n(t), like the Perfect codes, and allow higher mutual information than the comparable punctured Perfect codes for n(r) < n(t). These codes are referred to as the generalized Silver codes, since they enjoy the same desirable properties as the comparable Perfect codes (except possibly the coding gain) with lower ML-decoding complexity, analogous to the Silver code and the Golden code for two transmit antennas. Simulation results of the symbol error rates for four and eight transmit antennas show that the generalized Silver codes match the punctured Perfect codes in error performance while offering lower ML-decoding complexity.

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The role of homogeneity in ex situ grown conductive coatings and dimensionality in the lithium storage properties of TiO(2) is discussed here. TiO(2) nanotube and nanosheet comprising of mixed crystallographic phases of anatase and TiO(2) (B) have been synthesized by an optimized hydrothermal method. Surface modifications of TiO(2) nanotube are realized via coating the nanotube with Ag nanoparticles and amorphous carbon. The first discharge cycle capacity (at current rate = 10 mA g(-1)) for TiO(2) nanotube and nanosheet were 355 mAh g(-1) and 225 mAhg(-1), respectively. The conductive surface coating stabilized the titania crystallographic structure during lithium insertion-deinsertion processes via reduction in the accessibility of lithium ions to the trapping sites. The irreversible capacity is beneficially minimized from 110 mAh g(-1) for TiO(2) nanotubes to 96 mAh g(-1) and 57 mAhg(-1) respectively for Ag and carbon modified TiO(2) nanotubes. The homogeneously coated amorphous carbon over TiO(2) renders better lithium battery performance than randomly distributed Ag nanoparticles coated TiO(2) due to efficient hopping of electrons. (C) 2011 Elsevier B.V. All rights reserved.

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The effect of silver on the activity of oxygen in solution in liquid copper has been measured at 1373 K. The results are compared with those of other authors who have studied the system; it is found that the results are in good agreement with Alcock and Richardson's quasichemical model when a coordination number of 2 is assigned to all atoms in the ternary solution.

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A solid oxide galvanic cell and a gas-solid (View the MathML source) equilibration technique have been used to measure the activities of the solutes in the α-solid solutions of silver with indium and tin. The results are consistent with the information now available for the corresponding liquid alloys, the phase diagram and the heats of mixing of the solid alloy. When the results of this study are taken together with published data for the α-solid solutions in Ag + Cd system, it is found that the variation of the excess partial free energy of the solute with mole fraction can be correlated to the electron/atom ratio. The significant thennodynamic parameter that explains the Hume-Rothery findings in these alloys appears to be the rate of change of the excess partial free energy with composition near the phase boundary, and this in turn reflects the value of the solute-solute interaction energy.

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We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm(-1) in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3654151]

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Condensation of water droplets during rapid evaporation of a polymer solution, under humid conditions, has been known to generate uniformly porous polymer films. Similar porous films are also formed when a solution of the polymer in THF containing small amounts of water, is allowed to evaporate rapidly under air flow; this suggests that water droplets may be formed during the final stages of film formation. In the presence of added surfactants, the interface of water droplets could become lined with the surfactants and consequently the internal walls of the pores generated, upon removal of the water, could become decorated with the hydrophilic head groups of the surfactant molecules. In a series of carefully designed experiments, we have examined the effect of added surfactants, both anionic and cationic, on the formation of porous PMMA films; the films were prepared by evaporating a solution of the polymer in THF containing controlled amounts of aqueous surfactant solutions. We observed that the average size of the pores decreases with increasing surfactant concentration, while it increases with increasing amounts of added water. The size of the pores and their distribution were examined using AFM and IR imaging methods. Although IR imaging possessed inadequate resolution to confirm the presence of surfactants at the pore surface, exchange of the inorganic counterion, such as the sodium-ion of SDS, with suitable ionic organic dyes permitted the unequivocal demonstration of the presence of the surfactants at the interface by the use of confocal fluorescence microscopy.

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We have demonstrated the synthesis of light-sensitive polyelectrolyte capsules (PECs) by utilizing a novel polyol reduction method and investigated its applicability as photosensitive drug delivery vehicle. The nanostructured capsules were prepared via layer by layer (LbL) assembly of poly(allylamine hydrochloride) (PAN) and dextran sulfate (DS) on silica particles followed by in-situ synthesis of silver nanoparticles (NPs). Capsules without silver NPs were permeable to low molecular weight (A(w), 479 g/mol) rhodamine but impermeable to higher molecular weight fluorescence labeled dextran (FITC-dextran). However, capsules synthesized with silver NPs showed porous morphology and were permeable to higher molecular weight (M(w) 70 kDa) FITC-dextran also. These capsules were loaded with FITC-dextran using thermal encapsulation method by exploiting temperature induced shrinking of the capsules. During heat treatment the porous morphology of the capsules transformed into smooth pore free structure which prevents the movement of dextran into bulk during the loading process. When these loaded capsules are exposed to laser pulses, the capsule wall ruptured, resulting in the release of the loaded drug/dye. The rupture of the capsules was dependent on particle size, laser pulse energy and exposure time. The release was linear with time when pulse energy of 400 mu J was used and burst release was observed when pulse energy increased to 600 mu J.

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The possible chemical reactions that take place during the growth of single crystal films of silicon on sapphire (SOS) are analyzed thermodynamically. The temperature for the growth of good quality epitaxial films is dependent on the extent of water vapor present in the carrier gas. The higher the water vapor content the higher the temperature needed to grow SOS films. Due to the interaction of silicon with sapphire at elevated temperatures, SOS films are doped with aluminum. The extent of doping is dependent on the conditions of film growth. The doping by aluminum from the substrate increases with increasing growth temperatures and decreasing growth rates. The equilibrium concentrations of aluminum at the silicon-sapphire interface are calculated as a function of deposition temperature, assuming that SiO2 or Al6Si2O13 are the products of reaction. It is most likely that the product could be a solid solutio n of Al2O3 in SiO2. The total amount of aluminum released due to the interaction between silicon and sapphire will account only for the formation of not more than one monolayer of reaction product unless the films are annealed long enough at elevated temperatures. This value is in good agreement with the recently reported observations employing high resolution transmission electron microscopy.

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Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.

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The effect of an applied electric field on the magnetic properties of L1(0)-ordered CoPd thin films is investigated by first-principle calculations. Both the magnetic moment and the magnetocrystalline anisotropy of the surface atoms are changed by the electric field, but the net effect depends on the surface termination. The magnetocrystalline anisotropy switches from in-plane to perpendicular in the presence of external electric field. Typical magnetic-moment changes are 0.1 mu(B) per eV/angstrom The main mechanism is the shift of the Fermi level, but the anisotropy change also reflects a crystal-field change due to incomplete screening.

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EMF measurements were made with an electrochemical cell of the type ~t/&(s)/&+-beta alumina/Ag~S(s)S. 2(g). S(s or 1)/R at temperatures between 95 and 241°C. Sflver $- alumina was prepared with the ion exchange technique. The patial pressure of diatomic gas obtained from cell voltages agreed with the literature data.

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Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.

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Bi-layered Aurivillius compounds prove to be efficient candidates of nonvolatile memories. SrBi2Nb2O9 thin films were deposited by excimer laser ablation at low substrate temperature (400 °C) followed by an ex situ annealing at 750 °C. The polarization hysteresis behavior was confirmed by variation of polarization with the external applied electric field and also verified with capacitance versus voltage characteristics. The measured values of spontaneous and remnant polarizations were, respectively, 9 and 6 μC/cm2 with a coercive field of 90 kV/cm. The measured dielectric constant and dissipation factors at 100 kHz were 220 and 0.02, respectively. The frequency analysis of dielectric and ac conduction properties showed a distribution of relaxation times due to the presence of multiple grain boundaries in the films. The values of activation energies from the dissipation factor and grain interior resistance were found to be 0.9 and 1.3 eV, respectively. The deviation in these values was attributed to the energetic conditions of the grain boundaries and bulk grains. The macroscopic relaxation phenomenon is controlled by the higher resistive component in a film, such as grain boundaries at lower temperatures, which was highlighted in the present article in close relation to interior grain relaxation and conduction properties.