Effect of annealing on phase transition in poly(vinylidene fluoride) films prepared using polar solvent

The gamma-phase poly (vinylidene fluoride) (PVDF) films are usually prepared using dimethyl sulfoxide (DMSO) solvent, regardless of preparation temperature. Here we report the crystallization of both alpha and gamma-phase PVDF films by varying preparation temperature using DMSO solvent. The gamma-phase PVDF films were annealed at 70, 90, 110, 130 and 160 degrees C for five hours. The changes in the phase contents in the PVDF at different annealing conditions have been described. When thin films were annealed at 90 degrees C for 5 h, maximum percentage of beta-phase appears in PVDF thin films. The gamma-phase PVDF films completely converted to alpha-phase when they were annealed at 160 degrees C for 5 h. From X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), differential scanning calorimetry (DSC) and Raman studies, it is confirmed that the PVDF thin films, cast from solution and annealed at 90 degrees C for 5 h, have maximum percentage of beta-phase. The beta-phase PVDF shows a remnant polarization of 4.9 mu C/cm(2) at 1400 kV/cm at 1 Hz.

A Review of Photo-Induced Inter-Diffusion in Nano-Layered Chalcogenide Films

Abstract | A growing interest in the research of chalcogenide glasses can be currently witnessed, which to a large extent is caused by newly opened fields of applications for these materials. Applications in the field of micro- and opto-electronics, xerography and lithography, acousto-optic and memory switching devices and detectors for medical imaging seem to be most remarkable. Accordingly, photo induced phenomena in chalcogenide glasses are attracting much interest. These phenomena can be found both in uniform thin films as well as multilayered films. Among amorphous multilayers, chalcogenide multilayers are attractive because of the potential it has for tailoring the optical properties. I will be presenting some basic idea of photoinduced effects followed by the diffusion mechanisms of Se, Sb and Bi in to As2S3 films.

Influence of Si-C bond density on the properties of a-Si(1-x)C(x) thin films

Amorphous silicon carbide (a-Si(1-x)C(x)) films were deposited on silicon (100) and quartz substrates by pulsed DC reactive magnetron sputtering of silicon in methane (CH(4))-Argon (Ar) atmosphere. The influence of substrate temperature and target power on the composition, carbon bonding configuration, band gap, refractive index and hardness of a-SiC films has been investigated. Increase in substrate temperature results in slightly decreasing the carbon concentration in the films but favors silicon-carbon (Si-C) bonding. Also lower target powers were favorable towards Si-C bonding. X-ray photoelectron spectroscopy (XPS) results agree with the Fourier Transform Infrared (FTIR), UV-vis spectroscopy results. Increase in substrate temperature resulted in increased hardness of the thin films from 13 to 17 GPa and the corresponding bandgap varied from 2.1 to 1.8 eV. (C) 2011 Elsevier B.V. All rights reserved.

Electrochemical Integration of Graphene with Light-Absorbing Copper-Based Thin Films

We present an electrochemical route for the integration of graphene with light-sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive CuxS films of 1-2 mu m thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of CuxS films is presented. Current-voltage (I-V) characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other.

Atomic layer deposition of ZrO2 thin films: Study of growth kinetics and dielectric behaviour

Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic complexes of Zr as precursors. These films are characterized by X-ray diffraction, transmission and scanning electron microscopies, infrared spectroscopy, and electrical measurements. These show that amorphous ZrO2 films of high dielectric quality may be grown on Si(100) starting about 400degreesC. As the growth temperature is raised, the films become crystalline, the phase formed and the microstructure depending on precursor molecular structure. The phase of ZrO2 formed depends also on the relative duration of the precursor and oxygen pulses. XPS and IR spectroscopy show that films grown at low temperatures contain chemically unbound carbon, its extent depending on the precursor. C-V measurements show that films grown on Si(100) have low interface state density, low leakage current, a hysteresis width of only 10-250 mV and a dielectric constant of similar to16-25.

Compositionally modulated Pb(Mg1/3Nb2/3)O-3-PbTiO3 relaxor thin films deposited by pulsed excimer laser ablation technique

Thin films of (1-x)Pb(Mg1/3Nb2/3)O-3 - xPbTiO(3) (x = 0.1 to 0.3)(PMN-PT) were deposited on the platinum coated silicon substrate by pulsed excimer laser ablation technique. A template layer of LaSr0.5Co0.5O3 (LSCO) was deposited on platinum substrate prior to the deposition of PMN-PT thin films. The composition and the structure of the films were modulated via proper variation of the deposition parameter such as substrate temperature, laser fluence and thickness of the template layers. We observed the impact of the thickness of LSCO template layer on the orientation of the films. A room temperature dielectric constant varying from 2000 to 4500 was noted for different composition of the films. The dielectric properties of the films were studied over the frequency range of 100 Hz - 100 kHz over a wide range of temperatures. The films exhibited the relaxor- type behavior that was characterized by the frequency dispersion of the temperature of dielectric constant maxima (T-m) and also diffuse phase transition. C1 Indian Inst Sci, Mat Res Ctr, Bangalore, Karnataka 560012 India.

A comparative study of erbium oxide and gadolinium oxide high-k dielectric thin films grown by low-pressure metalorganic chemical vapour deposition (MOCVD) using beta-Diketonates as precursors

In this paper, a comparative study of thin films of Er2O3 and Gd2O3 grown on n-type Si(100) by low-pressure metalorganic chemical vapour deposition (MOCVD) under the identical conditions has been presented. beta-Diketonate complex of rate earth metals was used as precursor. Description on the evolution of the morphology, structure, optical, and electrical characteristics of films with respect to growth parameters and post-deposition annealing process has been presented. As-gown Gd2O3 films grow with <111> texture, whereas the texture of Er2O3 films strongly depends on the growth temperature (either <100> or <111>). Compositional analysis reveals that the Gd2O3 films grown at or above 500degreesC are carbon free whereas Er2O3 films at upto 525degreesC show the presence of heteroatoms and Er2O3 films grown above 525degreesC are carbon five. The effective dielectric constant is in the range of 7-24, while the fixed charge density is in the range - 10(11) to 10(10) CM-2 as extracted from the C-V characteristics. DC I-V study was carried out to examine the leakage behaviour of films. It reveals that the as-grown Gd2O3 film was very leakey in nature. Annealing of the films in oxidizing ambient for a period of 20 min results in a drastic improvement in the leakage behaviour. The presence of heteroatoms (such as carbon) and their effect on the properties of films are discussed.

Effect of AC&DC field on the dielectric response of (Pb,La)TiO3 thin films

Lanthanum doped lead titanate thin films are the potential candidates for the capacitors, actuators and pyroelectric sensor applications due to their excellent dielectric, and ferroelectric properties. Lanthanum doped lead titanate thin films are grown on platinum coated Si substrates by excimer laser ablation technique. A broad diffused phase transition with the maximum dielectric permittivity (ϵmax) shifting to higher temperatures with the increase of frequency, along with frequency dispersion below Tc, which are the signatures of the relaxor like characteristics were observed. The dielectric properties are investigated from −60°C to 200°C with an application of different dc fields. With increasing dc field, the dielectric constant is observed to reduce and phase transition temperature shifted to higher temperature. With the increased ac signal amplitude of the applied frequency, the magnitude of the dielectric constant is increasing and the frequency dispersion is observed in ferroelectric phase, whereas in paraelectric phase, there is no dispersion has been observed. The results are correlated with the existing theories.

Contact instabilities of anisotropic and inhomogeneous soft elastic films

Anisotropy plays important roles in various biological phenomena such as adhesion of geckos and grasshoppers enabled by the attachment pods having hierarchical structures like thin longitudinal setae connected with threads mimicked by anisotropic films. We study the contact instability of a transversely isotropic thin elastic film when it comes in contact proximity of another surface. In the present study we investigate the contact stability of a thin incompressible transversely isotropic film by performing linear stability analysis. Based on the linear stability analysis, we show that an approaching contactor renders the film unstable. The critical wavelength of the instability is a function of the total film thickness and the ratio of the Young's modulus in the longitudinal direction and the shear modulus in the plane containing the longitudinal axis. We also analyze the stability of a thin gradient film that is elastically inhomogeneous across its thickness. Compared to a homogeneous elastic film, it becomes unstable with a longer wavelength when the film becomes softer in going from the surface to the substrate.

Photocatalytic degradation of dimethoate using LbL fabricated TiO2/polymer hybrid films

Degradation of dimethoate under UV irradiation using TiO2/polymer films prepared by the layer-by-layer (LbL) method was investigated. The thin films were fabricated on glass slides and the surface morphology and roughness of the thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effect of lamp intensity, catalyst loading in the layers, number of bilayers, pH and initial dimethoate concentration on the degradation of dimethoate was systematically studied. The degradation was monitored using high performance liquid chromatography (HPLC) analysis and total organic carbon (TOC) measurements as a function of irradiation time, to see the change in concentration of dimethoate and mineralization, respectively. Complete degradation of dimethoate was achieved under TiO2 optimum loading of 4 g/L at an UV irradiation time of 180 min. Increase in the lamp intensity, catalyst loading and number of bilayers increased the rate of degradation. At a pH of 4.62, complete degradation of dimethoate was observed. The degradation efficiency decreased with increase in initial dimethoate concentration. The degradation byproducts were analyzed and confirmed by gas chromatography-mass spectra (GC-MS). Toxicity of the irradiated samples was measured using the luminescence of bacteria Vibrio fischeri after 30 min of incubation and the results showed more toxicity than the parent compound. Catalyst reusability studies revealed that the fabricated thin films could be repeatedly used for up to ten times without affecting the photocatalytic activity of the films. The findings of the present study are very useful for the treatment of wastewaters contaminated with pesticides. (C) 2011 Elsevier B.V. All rights reserved.

Antimicrobial Properties of Nanostructured TiO2 Plus Fe Additive Thin Films Synthesized by a Cost-Effective Sol-Gel Process

We prepared thin films composed of pure TiO2 or TiO2 with an Fe additive (at concentrations of 0.2-0.8 wt%) via a simple and cost effective sol gel process, and tested their antifungal properties (against Candida albicans (MTCC-1637), Candida tropicalis (MTCC-184), Candida parapsilosis (MTCC-2509), and Candida glabrata (MTCC-3019) and antibacterial properties (against Staphylococcus faecalis (NCIM-2604) Staphylococcus epidermidis (NCIM-2493), Staphylococcus aureus (NCIL-2122), and Bacillus subtilis (NCIM-2549)). The films were deposited on glass and Si substrates and subjected to annealing at 400 degrees C for 3 h in ambient air. The film structural and morphological properties were investigated by X-ray photoelectron spectroscopy profilometry and scanning electron microscopy, respectively. Antifungal and antibacterial tests were conducted using the drop test method. Among the species examined, Candida albicans (MTCC-1637), and Staphylococcus aureus (NCIL-2122) showed complete colony formation inhibition after exposure for 4 h for the TiO2 loaded with 0.8 wt% Fe thin films. These results indicate that increasing the Fe concentration increased the antimicrobial activity, with complete inhibition of colony formation after 4 h exposure.

Compositionally and structurally modulated Pb(Mg1/3Nb2/3)O3-PbTiO3 relaxor thin films for microactuator application

Thin films of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(x = 0.1 to 0.3) (PMN-PT) were successfully grown on the platinum coated silicon substrate by pulsed excimer laser ablation technique. A thin template layer of LaSr0.5Co0.5O3 (LSCO) was deposited on platinum substrate prior to the deposition of PMN-PT thin films. The composition and the structure of the films were modulated via proper variation of the deposition parameter such as substrate temperature, laser fluence and thickness of the template layers. We observed the impact of the thickness of LSCO template layer on the orientation of the films. The crystallographic structure and compositional variation were confirmed with x-ray diffraction and energy diffraction x-ray (EDX) analysis. A room temperature dielectric constant varying from 2000 to 4500 was noted for different composition of the films. The dielectric properties of the films were studied over the frequency range of 100 Hz - 100 kHz over a wide range of temperatures. The films exhibited the relaxor-type behavior that was characterized by the frequency dispersion of the temperature of dielectric constant maxima (Tm) and also diffuse phase transition. This relaxor nature in PMN-PT thin films was attributed to freezing of the dipole moment, which takes place below a certain temperature. This phenomenon was found to be very similar to spin glass system, where spins are observed to freeze after certain temperature.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Gallium and indium co-doped ZnO thin films for white light emitting diodes

Ga and In co-doped ZnO (GIZO) thin films together with ZnO, In-doped ZnO (IZO), Ga-doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current-voltage characteristics showed relatively lower turn-on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim