Impact of chemical treatment on the surface, structure, optical and electrical properties of SnS thin films

The impact of chemical treatment on the surface morphology and other physical properties of tin monosulphide (SnS) thin films have been investigated. The SnS films treated with selected organic solvents exhibited strong improvement in their crystalline-quality and considerable decrease in electrical resistivity. Particularly, the films treated with chloroform showed very low electrical resistivity of similar to 5 Omega cm and a low optical band gap of 1.81 eV as compared to untreated and treated SnS films with other chemicals. From these studies we realized that the chemical treatment of SnS films has strong impact on their surface morphology and also on other physical properties. (C) 2012 Elsevier B.V. All rights reserved.

Electrical switching studies on amorphous Ge‐Te‐Sn thin films

Electrical switching studies on amorphous Ge17Te83−xSnx thin films (1 ≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83−xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83−xSnx samples, make them suitable candidates for phase change memory applications.

Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect

In this brief, we present a physics-based solution for the temperature-dependent electrical resistance of a suspended metallic single-layer graphene (SLG) sheet under Joule self-heating. The effect of in-plane and flexural phonons on the electron scattering rates for a doped SLG layer has been considered, which particularly demonstrates the variation of the electrical resistance with increasing temperature at different current levels using the solution of the self-heating equation. The present solution agrees well with the available experimental data done with back-gate electrostatic method over a wide range of temperatures.

Evidence of collective relaxation behavior in the reentrant phase of oxygen-rich LaMnO3

The reentrant low temperature phase of the perovskite manganite LaMnO3+delta (delta=0.22) has been investigated with ac susceptibility and dc magnetization studies. A critical examination of the memory effects in ac susceptibility leads us to the conclusion that the slow dynamics in the system is a consequence of collective relaxation processes resulting from interactions between ferromagnetic clusters, whose presence was indicated in earlier studies. Here, we postulate that the collective behavior is due to the existence of long-range (dipolar) interactions between the large ferromagnetic `superspins'. This is also confirmed by an abnormally large microscopic spin-flip time (similar to 10(-9) s) compared to a canonical spin glass. (C) 2013 Elsevier B.V. All rights reserved.

Study of thermal relaxation of Poly (HDDA-co-MMA) by temperature modulated DSC and dielectric spectroscopy

The thermal transitions in the copolymer of 1,6-hexanediol diacrylate (HDDA) and methyl methacrylate (MMA) was investigated to understand its use in microstereolithography. The glass transition temperature and the effect of interaction on this transition process was investigated by means of temperature modulated differential scanning calorimetry (TMDSC). The heat capacities were determined and PHDDA rich phases showed lower heat capacity than PMMA rich phases. The frequency dependence of glass transitions were studied by varying the modulation period of TMDSC and confirmed by dielectric relaxation spectroscopy. Vogel Fulcher Tammann Hesse (VFTH) parameters of homo and copolymers have also been reported.

Ultrafast quasiparticle relaxation dynamics in superconducting iron pnictide Ca(Fe0.944Co0.056)(2)As-2

Nonequilibrium quasiparticle relaxation dynamics is reported in superconducting Ca(Fe0.944Co0.056)(2)As-2 single crystals by measuring transient reflectivity changes using femtosecond time-resolved pump-probe spectroscopy. Large changes in the temperature-dependent differential reflectivity values in the vicinity of the spin density wave (T-SDW) and superconducting (T-SC) transition temperatures of the sample have been inferred to have charge gap opening at those temperatures. We have estimated the zero-temperature charge gap value in the superconducting state to be similar to 1.8k(B)T(SC) and an electron-phonon coupling constant lambda of similar to 0.1 in the normal state that signifies the weak coupling in iron pnictides. From the peculiar temperature-dependence of the quasiparticle dynamics in the intermediate temperature region between T-SC and T-SDW we infer a temperature scale where the charge gap associated with the spin ordered phase is maximum and closes on either side while approaching the two phase transition temperatures.

Microscopic and dielectric studies of ZnO nanoparticles loaded in ortho-chloropolyaniline nanocomposites

We have studied the preparation of zinc oxide nanoparticles loaded in various weight percentages in ortho-chloropolyaniline by in situ polymerization method. The length of the O-chloropolyaniline tube is found to be 200 nm and diameter is about 150 nm wherein the embedded ZnO nanoparticles is of 13 nm as confirmed from scanning electron microscopy as well as transmission electron microscopy characterizations. The presence of the vibration band of the metal oxide and other characteristic bands confirms that the polymer nanocomposites are characterized by their Fourier transmission infrared spectroscopy. The X-ray diffraction pattern of nanocomposites reveals their polycrystalline nature. Electrical property of nanocomposites is a function of the filler as well as the matrix. Cole-Cole plots reveal the presence of well-defined semicircular arcs at high frequencies which are attributed to the bulk resistance of the material. Among all nanocomposites, 30 wt% shows the low relaxation time of 151 s, and hence it has high conductivity.

Magnetic and transport relaxation property of La0.85Sr0.15CoO3 single crystals

Here, we present a comprehensive investigation of the dc magnetization and magnetotransport studies on La0.85Sr0.15CoO3 single crystals grown by the optical float zone method. The spin freezing temperature in the ac susceptibility study shifts to lower value at higher dc field and this is well described by the de Almeida-Thouless line which is the characteristic of SG behavior. The Magnetotransport study shows that the sample exhibits a huge negative MR of similar to 70% at 10 K which monotonically decreases with the increase in temperature. Besides, the magnetization and the resistivity relaxation give strong indication that the MR scales with sample's magnetization. In essence, all the present experimental findings evidence the SG behavior of La0.85Sr0.15CoO3 single crystals.

Electron paramagnetic resonance, magnetic and electrical properties of CoFe2O4 nanoparticles

CoFe2O4 nanoparticles were prepared by solution combustion method. The nanoparticle are characterized by powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy and scanning electron microscopy (SEM). PXRD reveals single phase, cubic spinel structure with Fd (3) over barm (227) space group. SEM micrograph shows the particles are agglomerated and porous in nature. Electron paramagnetic resonance spectrum exhibits a broad resonance signal g=2.150 and is attributed to super exchange between Fe3+ and Co2+. Magnetization values of CoFe2O4 nanoparticle are lower when compared to the literature values of bulk samples. This can be attributed to the surface spin canting due to large surface-to-volume ratio for a nanoscale system. The variation of dielectric constant, dielectric loss, loss tangent and AC conductivity of as-synthesized nano CoFe2O4 particles at room temperature as a function of frequency has been studied. The magnetic and dielectric properties of the samples show that they are suitable for electronic and biomedical applications.

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.

Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Thin films of alumina (Al2O3) were deposited over Si < 1 0 0 > substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 degrees C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on p-type Si < 1 0 0 > substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.

Cl-35 NQR frequency and spin lattice relaxation time in 3,4-dichlorophenol as a function of pressure and temperature

The pressure dependences of Cl-35 nuclear quadrupole resonance (NQR) frequency, temperature and pressure variation of spin lattice relaxation time (T-1) were investigated in 3,4-dichlorophenol. T-1 was measured in the temperature range 77-300 K. Furthermore, the NQR frequency and T-1 for these compounds were measured as a function of pressure up to 5 kbar at 300 K. The temperature dependence of the average torsional lifetimes of the molecules and the transition probabilities W-1 and W-2 for the Delta m = +/- 1 and Delta m = +/- 2 transitions were also obtained. A nonlinear variation of NQR frequency with pressure has been observed and the pressure coefficients were observed to be positive. A thermodynamic analysis of the data was carried out to determine the constant volume temperature coefficients of the NQR frequency. An attempt is made to compare the torsional frequencies evaluated from NQR data with those obtained by IR spectra. On selecting the appropriate mode from IR spectra, a good agreement with torsional frequency obtained from NQR data is observed. The previously mentioned approach is a good illustration of the supplementary nature of the data from IR studies, in relation to NQR studies of compounds in solid state.

Effect of TiO2 on electrical and magnetic properties of Ni0.35Cu0.12Zn0.35Fe2O4 synthesized by the microwave-hydrothermal method

The nanocomposites of xTiO(2)+(1-x)Ni0.53Cu0.12Zn0.35Fe2O4 (where 0 <= x >= 1) were prepared using microwave hydrothermal (M H) method at 165 degrees C/45 min. The as-synthesized powders were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). The particle size of the powder varies from 18 to 35 nm. The as prepared powders were densified at 500 degrees C/30 min using microwave sintering method. The sintered composites were characterized by XRD and scanning electron microscopy (SEM). The bulk densities of the present composites were increasing with the addition of TiO2. The grain sizes of all the composite vary between 65 nm and 90 nm. The addition of TiO2 to ferrite increased the dielectric properties (epsilon' and epsilon `') also the resonant frequency of all the composites was found to be greater than 1 GHz. The imaginary part of permeability mu `' was found to increase with an increase of TiO2.

Ion transport studies in lithium phospho-molybdate glasses containing Cl- ion

Ion conducting glasses in xLiCl-20Li(2)O-(80-x) 0.80P(2)O(5)-0.20MoO(3)] glass system have been prepared over a wide range of composition (X = 5, 10, 15, 20 and 25 mol%). The electrical conductivity and dielectric relaxation of these glasses were analyzed using impedance spectroscopy in the frequency range of 10 Hz-10 MHz and in the temperature range of 313-353 K. D.c. activation energies extracted from Arrhenius plots using regression analysis, decreases with increasing LiCl mol%. A.c. conductivity data has been fitted to both single and double power law equation with both fixed and variable parameters. The increased conductivity in the present glass system has been correlated with the volume increasing effect and the coordination changes that occur due to structural modification resulting in the creation of non-bridging oxygens (NBO's) of the type O-Mo-O- bonds in the glass network. Dielectric relaxation mechanism in these glasses is analyzed using Kohlrausch-Williams-Watts (KWW) stretched exponential function and stretched exponent (beta) is found to be insensitive to temperature.

Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage

Electrical switching studies on amorphous Si15Te75Ge10 thin film devices reveal the existence of two distinct, stable low-resistance, SET states, achieved by varying the electrical input to the device. The multiple resistance levels can be attributed to multi-stage crystallization, as observed from temperature dependant resistance studies. The devices are tested for their ability to be RESET with minimal resistance degradation; further, they exhibit a minimal drift in the SET resistance value even after several months of switching. (c) 2013 Elsevier B.V. All rights reserved.