Development of uniformly grown ZnO NPs films using single precursor solution by pulsed spray pyrolysis technique

In this article, we have reported the controlled synthesis of uniformly grown zinc oxide nanoparticles (ZnO NPs) films by a simple, low-cost, and scalable pulsed spray pyrolysis technique. From the surface analysis it is noticed that the as-deposited films have uniformly dispersed NPs-like morphology. The structural studies reveal that these NPs films have highly crystalline hexagonal crystal structure, which are preferentially orientated along the (001) planes. The size of the NPs varied between 5 and 100 nm, and exhibited good stoichiometric chemical composition. Raman spectroscopic analysis reveals that these ZnO NPs films have pure single phase and hexagonal crystal structure. These unique nanostructured films exhibited a low electrical resistivity (5 Omega cm) and high light transmittance (90 %) in visible region.

Deposition and characterization of pure and Cd doped SnO2 thin films by the nebulizer spray pyrolysis (NSP) technique

Pure and cadmium doped tin oxide thin films were deposited on glass substrates from aqueous solution of cadmium acetate, tin (IV) chloride and sodium hydroxide by the nebulizer spray pyrolysis (NSP) technique. X-ray diffraction reveals that all films have tetragonal crystalline structure with preferential orientation along (200) plane. On application of the Scherrer formula, it is found that the maximum size of grains is 67 nm. Scanning electron microscopy shows that the grains are of rod and spherical in shape. Energy dispersive X-ray analysis reveals the average ratio of the atomic percentage of pure and Cd doped SnO2 films. The electrical resistivity is found to be 10(2) Omega cm at higher temperature (170 degrees C) and 10(3) Omega cm at lower temperature (30 degrees C). Optical band gap energy was determined from transmittance and absorbance data obtained from UV-vis spectra. Optical studies reveal that the band gap energy decreases from 3.90 eV to 3.52 eV due to the addition of Cd as dopant with different concentrations.

Nanostructured GdxZn1-xO thin films by nebulizer spray pyrolysis technique: Role of doping concentration on the structural and optical properties

Nanostructured GdxZn1-xO thin films with different Gd concentration from 0% to 10% deposited at 400 degrees C using the NSF technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a = 3.2497 angstrom and c = 5.2018 angstrom with hexagonal structure and preferential orientation along (002) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240 nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (epsilon(r), and epsilon(i)) and optical conductivities (sigma(r), and sigma(i)) were calculated from optical transmittance data. The optical band gap energy is 3.2 eV for pure ZnO film and 3.6 eV for Gd0.1Zn0.9-O film. The PL studies confirm the presence of a strong UV emission peak at 399 nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.

Micro-Raman and photoluminescence studies of self-assembled quantum well microtubes on GaAs substrate

The Semiconductor Quantum Well (QW) microtubes have been fabricated by strain-induced self assembling technique. Three types of multilayer structures have consisted of GaAs/InxGa1-xAs strained layers containing with various thickness of Monolayers of (GaAs/AlGaAs) QW were grown by Varian Gen II Molecular Beam Epitaxy (MBE) on the GaAs (100) substrate. The shape of the rolled up microtubes provide a clear idea about the formation of three dimensional micro- and nanostructures. Micro-Raman and photoluminescence (PL) studies were performed to the QW microtubes and as compared with their grown area on the GaAs substrate. The results of Raman spectra show the frequency shift of phonon modes measured in tube and compared with the grown area due to residual strain. The PL peaks of the microtube were red-shifted due to the strain effect and transition of bandgap from Type-II to Type-I. (C) 2013 Elsevier B.V. All rights reserved.

Continuous beam of laser-cooled Yb atoms

We demonstrate the launching of laser-cooled Yb atoms in a continuous atomic beam. The continuous cold beam has significant advantages over the more-common pulsed fountain, which was also demonstrated by us recently. The cold beam is formed in the following steps: i) atoms from a thermal beam are first Zeeman-slowed to a small final velocity; ii) the slowed atoms are captured in a two-dimensional magneto-optic trap (2D-MOT); and iii) atoms are launched continuously in the vertical direction using two sets of moving-molasses beams, inclined at +/- 15 degrees to the vertical. The cooling transition used is the strongly allowed S-1(0) -> P-1(1) transition at 399 nm. We capture about 7x10(6) atoms in the 2D-MOT, and then launch them with a vertical velocity of 13m/s at a longitudinal temperature of 125(6) mK. Copyright (C) EPLA, 2013

Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation

Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

Ferromagnetic Resonance Study on a Grid of Permalloy Nanowires

We report ferromagnetic resonance (FMR) study on a grid formed with permalloy nanowires to understand the spin wave dynamics. The presence of two sets of magnetic nanowires perpendicular to each other in the same device enables better control over spin waves. The grid was fabricated using e-beam lithography followed by DC-Magnetron sputtering and liftoff technique. It has dimensions of 800 +/- 10 and 400 +/- 10 nm as periods along X and Y directions with permalloy wires of width 145 +/- 10 nm. FMR studies were done at X-band (9.4 GHz) with the field sweep up to 1 Tesla. The in-plane angular variation of resonant fields shows that there are two well separated modes present, indicating two uniaxial anisotropy axes which are perpendicular to each other. The variation in the intensities in the FMR signal w.r.t. the grid angle is used to describe the spin wave confinement in different regions of the grid. We also explained the asymmetry in the magnetic properties caused by the geometrical property of the rectangular grid and the origin for the peak splitting for the modes occurring at higher resonant fields. Micromagnetic simulations based on OOMMF with two dimensional periodic boundary conditions (2D-PBC) are used to support our experimental findings.

Microcracking and fracture process in cement mortar and concrete: a comparative study using acoustic emission technique

This article reports the acoustic emission (AE) study of precursory micro-cracking activity and fracture behaviour of quasi-brittle materials such as concrete and cement mortar. In the present study, notched three-point bend specimens (TPB) were tested under crack mouth opening displacement (CMOD) control at a rate of 0.0004 mm/sec and the accompanying AE were recorded using a 8 channel AE monitoring system. The various AE statistical parameters including AE event rate , AE energy release rate , amplitude distribution for computing the AE based b-value, cumulative energy (I E) pound and ring down count (RDC) were used for the analysis. The results show that the micro-cracks initiated and grew at an early stage in mortar in the pre peak regime. While in the case of concrete, the micro-crack growth occurred during the peak load regime. However, both concrete and mortar showed three distinct stages of micro-cracking activity, namely initiation, stable growth and nucleation prior to the final failure. The AE statistical behavior of each individual stage is dependent on the number and size distribution of micro-cracks. The results obtained in the laboratory are useful to understand the various stages of micro-cracking activity during the fracture process in quasi-brittle materials such as concrete & mortar and extend them for field applications.

Low loss waveguide on chalcogenide glass using ultrafast laser at low repetition rate

In this work, we synthesized bulk amorphous GeGaS glass by conventional melt quenching technique. Amorphous nature of the glass is confirmed using X-ray diffraction. We fabricated the channel waveguides on this glass using the ultrafast laser inscription technique. The waveguides are written on this glass 100 mu m below the surface of the glass with a separation of 50 ae m by focusing the laser beam into the material using 0.67 NA lens. The laser parameters are set to 350 fs pulse duration at 100 KHz repetition rate. A range of writing energies with translation speeds 1 mm/s, 2 mm/s, 3 mm/s and 4 mm/s were investigated. After fabrication the waveguides facets were ground and polished to the optical quality to remove any tapering of the waveguide close to the edges. We characterized the loss measurement by butt coupling method and the mode field image of the waveguides has been captured to compare with the mode field image of fibers. Also we compared the asymmetry in the shape of the waveguide and its photo structural change using Raman spectra.

Design and Evaluation of a Robust Optical Beam-Interruption-Based Vehicle Classifier System

This paper presents the design and development of a novel optical vehicle classifier system, which is based on interruption of laser beams, that is suitable for use in places with poor transportation infrastructure. The system can estimate the speed, axle count, wheelbase, tire diameter, and the lane of motion of a vehicle. The design of the system eliminates the need for careful optical alignment, whereas the proposed estimation strategies render the estimates insensitive to angular mounting errors and to unevenness of the road. Strategies to estimate vehicular parameters are described along with the optimization of the geometry of the system to minimize estimation errors due to quantization. The system is subsequently fabricated, and the proposed features of the system are experimentally demonstrated. The relative errors in the estimation of velocity and tire diameter are shown to be within 0.5% and to change by less than 17% for angular mounting errors up to 30 degrees. In the field, the classifier demonstrates accuracy better than 97.5% and 94%, respectively, in the estimation of the wheelbase and lane of motion and can classify vehicles with an average accuracy of over 89.5%.

Is Granger Causality a Viable Technique for Analyzing fMRI Data?

Multivariate neural data provide the basis for assessing interactions in brain networks. Among myriad connectivity measures, Granger causality (GC) has proven to be statistically intuitive, easy to implement, and generate meaningful results. Although its application to functional MRI (fMRI) data is increasing, several factors have been identified that appear to hinder its neural interpretability: (a) latency differences in hemodynamic response function (HRF) across different brain regions, (b) low-sampling rates, and (c) noise. Recognizing that in basic and clinical neuroscience, it is often the change of a dependent variable (e.g., GC) between experimental conditions and between normal and pathology that is of interest, we address the question of whether there exist systematic relationships between GC at the fMRI level and that at the neural level. Simulated neural signals were convolved with a canonical HRF, down-sampled, and noise-added to generate simulated fMRI data. As the coupling parameters in the model were varied, fMRI GC and neural GC were calculated, and their relationship examined. Three main results were found: (1) GC following HRF convolution is a monotonically increasing function of neural GC; (2) this monotonicity can be reliably detected as a positive correlation when realistic fMRI temporal resolution and noise level were used; and (3) although the detectability of monotonicity declined due to the presence of HRF latency differences, substantial recovery of detectability occurred after correcting for latency differences. These results suggest that Granger causality is a viable technique for analyzing fMRI data when the questions are appropriately formulated.

Large-area Piezoceramic Coating with IDT Electrodes for Ultrasonic Sensing Applications

In the present paper, the ultrasonic strain sensing performance of large-area piezoceramic coating with Inter Digital Transducer (IDT) electrodes is studied. The piezoceramic coating is prepared using slurry coating technique and the piezoelectric phase is achieved by poling under DC field. To study the sensing performance of the piezoceramic coating with IDT electrodes for strain induced by the guided waves, the piezoceramic coating is fabricated on the surface of a beam specimen at one end and the ultrasonic guided waves are launched with a piezoelectric wafer bonded on another end. Often a wider frequency band of operation is needed for the effective implementation of the sensors in the Structural Health Monitoring (SHM) of various structures, for different types of damages. A wider frequency band of operation is achieved in the present study by considering the variation in the number of IDT electrodes in the contribution of voltage for the induced dynamic strain. In the present work, the fabricated piezoceramic coatings with IDT electrodes have been characterized for dynamic strain sensing applications using guided wave technique at various different frequencies. Strain levels of the launched guided wave are varied by varying the magnitude of the input voltage sent to the actuator. Sensitivity variation with the variation in the strain levels of guided wave is studied for the combination of different number of IDT electrodes. Piezoelectric coefficient e(11) is determined at different frequencies and at different strain levels using the guided wave technique.

Wurtzite InN nanodots on Si(100) by molecular beam epitaxy

Studies were carried on the growth behavior of InN nanodots by plasma assisted molecular beam epitaxy on bare Si(100) substrates and their structural, optical, electrical properties. The growth was carried out by two different methods such as, (i) mono-step growth process at a low temperature and a (ii) bi-step growth process with the combination of low and high temperatures for the formation of single crystalline nanodots with well defined crystallographic facets due to cluster migration. Low temperature photoluminescence shows a free excitonic (FE) luminescence at 0.80 eV. The Raman spectroscopy and X-ray diffraction studies reveal that the nanodots as well as the film were of wurtzite structure and strain free.

Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy

The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be 0 0 0 1] GaN parallel to -1 1 0 1] sapphire and -1 1 0 0] GaN parallel to 1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.