Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low(Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al2O3/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al2O3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al2O3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al2O3/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current-voltage characteristics displayed by these devices. (C) 2015 Elsevier B.V. All rights reserved.

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors

One of the most interesting predicted applications of graphenemonolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of lowfrequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-densityfluctuation-based model to explain the superior characteristics of a noisemeasurement-based detection scheme presented in this article.

Mono layer to Interdigitated Partial Bilayer Smectic C Transition in Thiophene-Based Spacer Mesogens: X-ray Diffraction and C-13 Nuclear Magnetic Resonance Studies

Mesophase organization of molecules built with thiophene at the center and linked via flexible spacers to rigid side arm core units and terminal alkoxy chains has been investigated. Thirty homologues realized by varying the span of the spacers as well as the length of the terminal chains have been studied. In addition to the enantiotropic nematic phase observed for all the mesogens, the increase of the spacer as well as the terminal chain lengths resulted in the smectic C phase. The molecular organization in the smectic phase as investigated by temperature dependent X-ray diffraction measurements revealed an interesting behavior that depended on the length of the spacer vis-a-vis the length of the terminal chain. Thus, a tilted interdigitated partial bilayer organization was observed for molecules with a shorter spacer length, while a tilted monolayer arrangement was observed for those with a longer spacer length. High-resolution solid state C-13 NMR studies carried out for representative mesogens indicated a U-shape for all the molecules, indicating that intermolecular interactions and molecular dynamics rather than molecular shape are responsible for the observed behavior. Models for the mesophase organization have been considered and the results understood in terms of segregation of incompatible parts of the mesogens combined with steric frustration leading to the observed lamellar order.

Onset of plane layer magnetoconvection at low Ekman number

We study the onset of magnetoconvection between two infinite horizontal planes subject to a vertical magnetic field aligned with background rotation. In order to gain insight into the convection taking place in the Earth's tangent cylinder, we target regimes of asymptotically strong rotation. The critical Rayleigh number Ra-c and critical wavenumber a(c) are computed numerically by solving the linear stability problem in a systematic way, with either stress-free or no-slip kinematic boundary conditions. A parametric study is conducted, varying the Ekman number E (ratio of viscous to Coriolis forces) and the Elsasser number. (ratio of the Lorentz force to the Coriolis force). E is varied from 10(-9) to 10(-2) and. from 10(-3) to 1. For a wide range of thermal and magnetic Prandtl numbers, our results verify and confirm previous experimental and theoretical results showing the existence of two distinct unstable modes at low values of E-one being controlled by the magnetic field, the other being controlled by viscosity (often called the viscous mode). It is shown that oscillatory onset does not occur in the range of parameters we are interested in. Asymptotic scalings for the onset of these modes are numerically confirmed and their domain of validity is precisely quantified. We show that with no-slip boundary conditions, the asymptotic behavior is reached for E < 10(-6) and establish a map in the (E, Lambda) plane. We distinguish regions where convection sets in either through the magnetic mode or through the viscous mode. Our analysis gives the regime in which the transition between magnetic and viscous modes may be observed. We also show that within the asymptotic regime, the role played by the kinematic boundary conditions is minimal. (C) 2015 AIP Publishing LLC.

Bearing capacity factors for a conical footing using lower- and upper-bound finite elements limit analysis

Bearing capacity factors, N-c, N-q, and N-gamma, for a conical footing are determined by using the lower and upper bound axisymmetric formulation of the limit analysis in combination with finite elements and optimization. These factors are obtained in a bound form for a wide range of the values of cone apex angle (beta) and phi with delta = 0, 0.5 phi, and phi. The bearing capacity factors for a perfectly rough (delta = phi) conical footing generally increase with a decrease in beta. On the contrary, for delta = 0 degrees, the factors N-c and N-q reduce gradually with a decrease in beta. For delta = 0 degrees, the factor N-gamma for phi >= 35 degrees becomes a minimum for beta approximate to 90 degrees. For delta = 0 degrees, N-gamma for phi <= 30 degrees, as in the case of delta = phi, generally reduces with an increase in beta. The failure and nodal velocity patterns are also examined. The results compare well with different numerical solutions and centrifuge tests' data available from the literature.

Local structure of boundary layer transition in experiments with a single streamwise vortex

Transition induced by an isolated streamwise vortex embedded in a flat plate boundary layer was studied experimentally. The vortex was created by a gentle hill with a Gaussian profile that spanned on half of the width of a flat plate mounted in a low turbulence wind tunnel. PIV and hot-wire anemometry data were taken. Transition occurs as a non-inclined shear layer breaks up into a sequence of vortices, close to the boundary layer edge. The passing frequency of these vortices scales with square of the freestream velocity, similar to that in single-roughness induced transition. Quadrant analysis of streamwise and wall-normal velocity fluctuations show large ejection events in the outer layer. (C) 2015 Elsevier Inc. All rights reserved.

Probing Photoexcited Carriers in a Few-Layer MoS2 Laminate by Time-Resolved Optical Pump-Terahertz Probe Spectroscopy

We report the dynamics of photoinduced carriers in a free-standing MoS2 laminate consisting of a few layers (1-6 layers) using time-resolved optical pump-terahertz probe spectroscopy. Upon photoexcitation with the 800 nm pump pulse, the terahertz conductivity increases due to absorption by the photoinduced charge carriers. The relaxation of the non-equilibrium carriers shows fast as well as slow decay channels, analyzed using a rate equation model incorporating defect-assisted Auger scattering of photoexcited electrons, holes, and excitons. The fast relaxation time occurs due to the capture of electrons and holes by defects via Auger processes, resulting in nonradiative recombination. The slower relaxation arises since the excitons are bound to the defects, preventing the defect-assisted Auger recombination of the electrons and the holes. Our results provide a comprehensive understanding of the non-equilibrium carrier kinetics in a system of unscreened Coulomb interactions, where defect-assisted Auger processes dominate and should be applicable to other 2D systems.