Peristaltic transport of two immiscible viscous fluids in a circular tube

Peristaltic motion of two immiscible viscous incompressible fluids in a circular tube is studied in pumping and copumping ranges under long-wavelength and low-Reynolds-number assumptions. The effect of the peripheral-layer viscosity on the time-averaged flux and the mechanical efficiency is studied. The formation and growth of the trapping zone in the core and the peripheral layer are explained. It is observed that the bolus volume in the peripheral layer increases with an increase in the viscosity ratio. The limits of the time-averaged flux (Q) over bar for trapping in the core are obtained. The trapping observed in the peripheral layer decreases in size with an increase in (Q) over bar but never disappears. The development of the complete trapping of the core fluid by the peripheral-layer fluid with an increase in the time-averaged flux is demonstrated. The effect of peripheral-layer viscosity on the reflux layer is investigated. It is also observed that the reflux occurs in the entire pumping range for all viscosity ratios and it is absent in the entire range of copumping.

Peristaltic transport of a biofluid in a pipe of elliptic cross section

Peristaltic transport of two fluids occupying the peripheral layer and the core in an elliptic tube is, investigated in elliptic cylindrical co-ordinate system, under long wavelength and low Reynolds number approximations. The effect of peripheral-layer viscosity on the flow rate and the frictional force for a slightly elliptic tube is discussed. The limiting results for the one-fluid model are obtained for different eccentricities of the undisturbed tube cross sections with the same area. As a result of non-uniformity of the peristaltic wave, two different amplitude ratios are defined and the time-averaged flux and mechanical efficiency are studied for different eccentricities. It is observed that the time-averaged flux is not affected significantly by the pressure drop when the eccentricity is large. For the peristaltic waves with same area variation, the pumping seems to improve with the eccentricity.

Electrical and magnetic properties of pure and Li intercalated Bi1.7-xPbxV8O16 phases

Hollandite oxides of the type Bi1.7-xPbxV8O16 have been synthesized. The electrical resistivity studies show that the conductivity improves upon Pb substitution. The feasibility of Li intercalation in the system has been established. Magnetic susceptibility studies on the pure and Li intercalated phases show that except for pure Bi1.7V8O16, all phases exhibit Pauli paramagnetism. No superconductivity is encountered down to 12 K in any of the phases. (C) 1998 Elsevier Science B.V. All rights reserved.

Electronic conduction in LaNiO3-delta: the dependence on the oxygen stoichiometry delta

We report a systematic study of the electronic transport properties of the metallic perovskite oxide LaNiO3-delta as a function of the oxygen stoichiometry delta (delta less than or equal to 0.14). The electrical resistivity, magnetoresistance, susceptibility, Hall effect and thermopower have been studied, All of the transport coefficients are dependent on the value of delta. The resistivity increases almost exponentially as delta increases. We relate this increase in rho to the creation of Ni2+ with square-planar coordination. We find that there is a distinct T-1.5-contribution to the resistivity over the whole temperature range. The thermopower is negative, as expected for systems with electrons as the carrier, but the Hall coefficient is positive. We have given a qualitative and quantitative explanation for the different quantities observed and their systematic variation with the stoichiometry delta.

7Li and 23Na NMR studies of transmembrane cation transport mediated by ionophore lasalocid A

Ion transport across phospholipid vesicles was studied by 7Li and 23Na-NMR using an aqueous anionic paramagnetic shift reagent, dysprosium nitrilotriacetate [Dy(NTA)2]3?, mediated by ionophores, lasalocid A and A23187. The intra- and extracellular 7Li and 23Na-NMR signals were well separated (20?Hz) at mM concentration of the shift reagent. The observed data on the rate constant for lithium transport across DPPC vesicles at various concentrations of the ionophores indicated that lasalocid A is a more efficient carrier for lithium ion compared with the sodium ion transport by this ionophore, while A23187 was not specific to either of the ions (Li or Na). ©1998 European Peptide Society and John Wiley & Sons, Ltd.

Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Modelling transport processes during microwave heating: A review

The review is concerned with models that analyze transport:processes that occur during microwave heating. Early models on microwave. heating used Lambert's law to describe the microwave power absorption. Over the last decade, models for transport processes have been developed with the microwave power derived from Maxwell's equations. Those models, primarily based on plane waves, have been used for analyzing microwave heating of solids, liquids, emulsions, microwave thawing and drying. The models illustrate phenomena such a resonances, hot spots, edge and runaway heating. The literature on microwave sintering, susceptor heating and microwave assisted synthesis is largely experimental in nature and only key issues are highlighted. To fully appreciate the models for microwave heating, a section on the theory of electromagnetic wave propagation is included, where expressions for the electric field in dielectric slabs and cylinders are presented.

Origin of carrier-type reversal in Pb-Ge-Se glasses: A detailed thermal, electrical, and structural study

A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb-Ge-Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0-20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band structures of Ge-Se glasses has been considered. The p -->n transition has been attributed to the energetic disposition of the sp(3)d(2) band of Pb atoms, which is located closely above the lone pair band of selenium. This feature makes Pb unique in the context of p -->n transition of chalcogenide glasses. The model can be extended successfully to account for the CTR behavior observed in Bi containing chalcogenide glasses also.

Comparison of electrical resistivity by geophysical method and neutron probe logging for soil moisture monitoring in a forested watershed

Geophysical methods are becoming more popular nowadays in the field of hydrology due to their time and space efficiency. So an attempt has been made here to relate electrical resistivity with soil moisture content in the field. The experiments were carried out in an experimental watershed `Mulehole' in southern India, which is a forested watershed with approximately 80% red soil. Five auger holes were drilled to perform the soil moisture and electrical resistivity measurements in a toposequence having red and black soils, with sandy weathered soil at the bottom. Soil moisture was measured using neutron probe and electrical resistivity was measured using electrical logging tool. The results indicate that electrical resistivity measurements can be used to measure soil moisture content for red soils only.

Structure and silver ion transport in AgI-Ag2MoO4 glasses: A molecular dynamics study

The structure and dynamics of silver ion conducting AgI-Ag2MoO4 glasses have been simulated by molecular dynamics simulation over a wide range of compositions. Formation of silver iodide like aggregates have been identified only in the AgI rich glasses. Increase in silver ion conductivity with an increase in AgI content in the glass is seen as in experiments. The dynamics of ion transport suggests that Ag+ ion transport occurs largely through paths connected by silver ion sites of mixed iodide-oxide coordination. The Van Hove correlation functions indicate that Ag+ ions prefer migration along the pathways formed with connected sites of similar coordination.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

The physics and technology of gallium antimonide: An emerging optoelectronic material

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mu m. The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. (C) 1997 American Institute of Physics.

Role of PbO in lithium ion transport in Li2O-PbO-B2O3 glasses

Abstract: A wide range of compositions of grasses in the ternary Li2O-PbO-B2O3 glass system was prepared, and de and ac conductivity measurements were carried out on these glasses. The presence of lead leads to a decrease in de conductivities and an increase in the activation energies. This is likely to be due to the increase of the partial charges on the oxygen atoms and to the presence of the lone pair on the Pb atom; both of these factors impede lithium ion motion. The ac conductivity and dielectric behavior of these glasses support such a conjecture. (C) 2000 Elsevier Science Ltd.

Spectral, thermal and electrical properties of poly(o- and m-toluidine) PVC blends prepared by solution blending

Poly(o-toluidine) (POT) and poly(m-toluidine) (PMT) blends with polyvinylchloride (PVC) of five different compositions have been prepared by solution blending. The POT-PVC and PMT-PVC blends were prepared using THF as a solvent in which POT-HNO3, PMT-HNO3 bases and PVC are soluble. The blends have been characterized by spectral, thermal and electrical measurements. The results indicate the formation of blends at all the compositions presently studied. The thermal stability of the POT-PVC and PMT-PVC blends is higher than that of POT-HNO3 and PMT-HNO3 salts, respectively. Using the present method, POT/PMT can conveniently be blended with 30% wt/wt of PVC without significant loss in its conductivity. (C) 1998 Elsevier Science Ltd. All rights reserved.

Study of the electrical properties of pulsed laser ablated (Ba0.5Sr0.5)TiO3 thin films

The laser ablated barium strontium titanate (BST) thin films were characterized in terms of composition, structure, microstructure and electrical properties. Films deposited at 300 degrees C under 50 mTorr oxygen pressure and 3 J cm(-2) laser fluence and further annealed at 600 degrees C in flowing oxygen showed a dielectric constant of 467 and a dissipation factor of 0.02. The room-temperature current-voltage characteristics revealed a space charge limited conduction (SCLC) mechanism, though at low fields the effect of the electrodes was predominant. The conduction mechanism was thoroughly-investigated in terms of Schottky emission at low fields, and bulk-limited SCLC at high fields. The change over to the bulk-limited conduction process from the electrode-limited Schottky emission was, attributed to the process of tunneling through the electrode interface at high fields resulting into the lowering of the electrode contact resistance and consequently giving rise to a bulk limited conduction process. The predominance of SCLC mechanism in the films suggests that the bulk properties are only revealed if the depletion width at the electrode interface is thin enough to allow the tunneling process to take place. This condition is only favorable if the him thickness is high or if the doping concentration is high enough. In the present case the film thickness ranged from 0.3 to 0.7 mu m which was suitable to show the transition mentioned above. (C) 1999 Elsevier Science S.A. All rights reserved.