Higher spin quasinormal modes and one-loop determinants in the BTZ black hole

We solve the wave equations of arbitrary integer spin fields in the BTZ black hole background and obtain exact expressions for their quasinormal modes. We show that these quasinormal modes precisely agree with the location of the poles of the corresponding two point function in the dual conformal field theory as predicted by the AdS/CFT correspondence. We then use these quasinormal modes to construct the one-loop determinant of the higher spin field in the thermal BTZ background. This is shown to agree with that obtained from the corresponding heat kernel constructed recently by group theoretic methods.

Martensite-like transition and spin-glass behavior in nanocrystalline Pr0.5Ca0.5MnO3

We report on isothermal pulsed (20 ms) field magnetization, temperature dependent AC - susceptibility, and the static low magnetic field measurements carried out on 10 nm sized Pr0.5Ca0.5MnO3 nanoparticles (PCMO10). The saturation field for the magnetization of PCMO10 (similar to 250 kOe) is found to be reduced in comparison with that of bulk PCMO (similar to 300 kOe). With increasing temperature, the critical magnetic field required to `melt' the residual charge-ordered phase decays exponentially while the field transition range broadens, which is indicative of a Martensite-like transition. The AC - susceptibility data indicate the presence of a frequency-dependent freezing temperature, satisfying the conventional Vogel-Fulcher and power laws, pointing to the existence of a spin-glass-like disordered magnetic phase. The present results lead to a better understanding of manganite physics and might prove helpful for practical applications. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. doi:10.1063/1.3664786]

Hardness and Nitrogen Bonding Structure of A(x)Ti(1-x)N/CrN Multilayer Hard Coating

AlxTi1-xN/CrN multilayer coatings were fabricated by magnetron sputtering and those hardness variations were studied by observing the crack propagation and measuring the chemical bonding state of nitrides by Ti addition. While AlN/CrN multilayer shown stair-like crack propagation, AlxTi1-xN/CrN multilayer illustrated straight crack propagation. Most interestingly, Ti addition induced more broken nitrogen bonds in the nitride multilayers, leading to the reduction of hardness. However, the hardness of Al0.25Ti0.75N/CrN multilayer, having high Ti contents, increased by the formation of many Ti-N bond again instead of Al-N bond. From these results, we found that linear crack propagation behavior was dominated by broken nitrogen bonds in the AlxT1-xN/CrN multilayer coatings.

Unusual photoresponse of indium doped ZnO/organic thin film heterojunction

Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT: PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4704655]

Sivers effect and transverse single spin asymmetry in e+p(up arrow) -> e+J/psi+X

We discuss the possibility of using electroproduction of J/psi as a probe of gluon Sivers function by measuring single spin asymmetry (SSA) in experiments with transversely polarized protons and electron beams. We estimate SSA for JLab, HERMES, COMPASS, and eRHIC energies using the color evaporation model of charmonium production and find asymmetry up to 25% for certain choices of model parameters which have been used earlier for estimating SSA in the SIDIS and Drell-Yan processes.

Ultrasonic performance of the PVDF thin film sensors under thermal fatigue

In the present work, the ultrasonic strain sensing performance of the large area PVDF thin film subjected to the thermal fatigue is studied. The PVDF thin film is prepared using hot press and the piezoelectric phase (beta-phase) has been achieved by thermo-mechanical treatment and poling under DC field. The sensors used in aircrafts for structural health monitoring applications are likely to be subjected to a wide range of temperature fluctuations which may create thermal fatigue in both aircraft structures and in the sensors. Thus, the sensitivity of the PVDF sensors for thermal fatigue needs to be studied for its effective implementation in the structural health monitoring applications. In present work, the fabricated films have been subjected to certain number of thermal cycles which serve as thermal fatigue and are further tested for ultrasonic strain sensitivity at various different frequencies. The PVDF sensor is bonded on the beam specimen at one end and the ultrasonic guided waves are launched with a piezoelectric wafer bonded on another end of the beam. Sensitivity of PVDF sensor in terms of voltage is obtained for increasing number of thermal cycles. Sensitivity variation is studied at various different extent of thermal fatigue. The variation of the sensor sensitivity with frequency due to thermal fatigue at different temperatures is also investigated. The present investigation shows an appropriate temperature range for the application of the PVDF sensors in structural health monitoring.

Simple coating technique for 2-dimensional zinc oxide nanostructure

We report a novel and simple solution-based technique for depositing 2-D zinc oxide platelets at low temperature. Nanoplatelets that were mostly a-oriented associated with the Lotgering orientation factor of 0.65 were obtained by locating a glass substrate at a distance of about 5cm over the aqueous vapour of the boiling precursor. Experiments were carried out to optimize the coating parameters by placing the substrate at different positions, durations and the pH of the precursor. The X-ray diffraction studies confirmed the structure associated with the crystallites to be wurzite. The different morphology of the zinc oxide films and blue light emission were observed using scanning electron microscopy and fluorescence spectroscopy respectively.

Electroless Ni-W-P Coating and Its Nano-WS2 Composite: Preparation and Properties

The ternary alloy Ni-W-P and its WS2 nanocomposite coatings were successfully obtained on low-carbon steel using the electroless plating technique. The sodium tungstate (Na2WO4) concentration in the bath was varied to obtain Ni-W-P deposits containing various Ni and P contents. WS2 composite was obtained with a suitable concentration of Na2WO4 in Ni-P coating. These deposits were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray analysis (EDX) studies. The corrosion behavior was investigated by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) studies in 3.5 wt % NaCl solutions, and the corrosion rates of the coatings for Ni-P, Ni-W-P, and Ni-W-P-WS2 were found to be 2.571 x 10(-5), 8.219 x 10(-7), and 7.986 x 10(-7) g/h, respectively. An increase in the codeposition of alloying metal tungsten (W) enhanced the corrosion resistance and microhardness and changed the structure and morphology of the deposits. Incorporation of WS2 nanoparticles to Ni-W-P alloy coating reduced the coefficient of friction from 0.16 to 0.11 and also helped in improving the corrosion resistance of the coating further.

Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer

ZnO/Si heterojunctions were fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without buffer layers. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent current-voltage measurements and RT capacitance-voltage (C-V) analysis. The charge carrier concentration and the barrier height (BH) were calculated, to be 5.6x10(19) cm(-3) and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated using the thermionic emission (TE) model, were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10(-7)A/cm(2) K-2 than the theoretical value (32 A/cm(2) K-2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of sigma(2)=0.035 V. By implementing the GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm(2) K-2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. (C) 2012 Elsevier B.V. All rights reserved.

ENTANGLEMENT IN A 3-SPIN HEISENBERG-XY CHAIN WITH NEAREST-NEIGHBOR INTERACTIONS, SIMULATED IN AN NMR QUANTUM SIMULATOR

The evolution of entanglement in a 3-spin chain with nearest-neighbor Heisenberg-XY interactions for different initial states is investigated here. In an NMR experimental implementation, we generate multipartite entangled states starting from initial separable pseudo-pure states by simulating nearest-neighbor XY interactions in a 3-spin linear chain of nuclear spin qubits. For simulating XY interactions, we follow algebraic method of Zhang et al. Phys. Rev. A 72 (2005) 012331]. Bell state between end qubits has been generated by using only the unitary evolution of the XY Hamiltonian. For generating W-state and GHZ-state a single qubit rotation is applied on second and all the three qubits, respectively after the unitary evolution of the XY Hamiltonian.

Phonon anomalies and structural transition in spin ice Dy2Ti2O7: a simultaneous pressure-dependent and temperature-dependent Raman study

We revisit the assignment of Raman phonons of rare-earth titanates by performing Raman measurements on single crystals of O18 isotope-rich spin ice Dy2Ti2O718 and nonmagnetic Lu2Ti2O718 pyrochlores and compare the results with their O16 counterparts. We show that the low-wavenumber Raman modes below 250 cm-1 are not due to oxygen vibrations. A mode near 200 cm-1, commonly assigned as F2g phonon, which shows highly anomalous temperature dependence, is now assigned to a disorder-induced Raman active mode involving Ti4+ vibrations. Moreover, we address here the origin of the new Raman mode, observed below TC similar to 110 K in Dy2Ti2O7, through a simultaneous pressure-dependent and temperature-dependent Raman study. Our study confirms the new mode to be a phonon mode. We find that dTC/dP = + 5.9 K/GPa. Temperature dependence of other phonons has also been studied at various pressures up to similar to 8 GPa. We find that pressure suppresses the anomalous temperature dependence. The role of the inherent vacant sites present in the pyrochlore structure in the anomalous temperature dependence is also discussed. Copyright (c) 2012 John Wiley & Sons, Ltd.

Photo induced Effects on the Optical Properties of Sb40Se20S40 Thin Film

The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra supports the optical changes happening in the film due to light exposure.

Polymer thin film structures for ultra-low cost biosensing

Reflectance change due to binding of molecules on thin film structures has been exploited for bio-molecular sensing by several groups due to its potential in the development of sensitive, low cost, easy to fabricate, large area sensors with high multiplexing capabilities. However, all of these sensing platforms have been developed using traditional semiconductor materials and processing techniques, which are expensive. This article presents a method to fabricate disposable thin film reflectance biosensors using polymers, such as polycarbonate, which are 2-3 orders of magnitude cheaper than conventional semiconductor and dielectric materials and can be processed by alternate low cost methods, leading to significant reduction in consumable costs associated with diagnostic biosensing. (C) 2011 Elsevier GmbH. All rights reserved.

Higher spin fermions in the BTZ black hole

Recently it has been shown that the wave equations of bosonic higher spin fields in the BTZ background can be solved exactly. In this work we extend this analysis to fermionic higher spin fields. We solve the wave equations for arbitrary half-integer spin fields in the BTZ black hole background and obtain exact expressions for their quasinormal modes. These quasinormal modes are shown to agree precisely with the poles of the corresponding two point function in the dual conformal field theory as predicted by the AdS/CFT correspondence. We also obtain an expression for the 1-loop determinant for the Euclidean non-rotating BTZ black hole in terms of the quasinormal modes which agrees with that obtained by integrating the heat kernel found by group theoretic methods.