Silicon isotopes: from cosmos to benthos

Silicon is the second most abundant element on the Earth and one of the more abundant elements in our Solar System. Variations in the relative abundance of the stable isotopes of Si (Si isotope fractionation) in different natural reservoirs, both terrestrial (surface and deep Earth) as well as extra-terrestrial (e.g. meteorites, lunar samples), are a powerful tracer of present and past processes involving abiotic as well as biotic systems. The versatility of the Si isotope tracer is reflected in its wide-ranging applications from understanding the origin of early Solar System objects, planetary differentiation, Moon formation, mantle melting and magma differentiation on the Earth, ancient sea-water composition, to modern-day weathering, clay formation and biological fractionation on land as well as in the oceans. The application of Si isotopes as tracers of natural processes started over six decades ago and its usage has seen a sudden increase over the last decade due to improvements in mass spectrometry, particularly the advent of multi-collector inductively coupled plasma mass spectrometers, which has made Si isotope measurements safe and relatively easy while simultaneously improving the accuracy and precision of measurements.

Intermetallic eutectic alloys in the Ni-Al-Zr system with attractive high temperature properties

We describe a group of alloys with ultrahigh strength of about 2 GPa at 700 degrees C and exceptional oxidation resistance to 1100 degrees C. These alloys exploit intermetallic phases with stable oxide forming elements that combine to form fine nanometric scale structures through eutectic transformations in ternary systems. The alloys offer engineering tensile plasticity of about 4% at room temperature though both conventional dislocation mechanisms and twinning in the more complex intermetallic constituent, along with slip lengths that are restricted by the interphase boundaries in the eutectics.

Thermoelectric properties of Pb0.75-xMnxSn0.25Te alloys with variable manganese content

Lead tin telluride is one of the well-established thermoelectric materials in the temperature range 350-750 K. In the present study, Pb0.75-xMnxSn0.25Te1.00 alloys with variable manganese (Mn) content were prepared by solid state synthesis and the thermoelectric properties were studied. X-ray diffraction, (XRD) showed that the samples followed Vegard's law, indicating solid solution formation and substitution of Mn at the Pb site. Scanning Electron Microscopy (SEM) showed that the grain sizes varied from <1 mu m to more than 10 mu m and MnTe rich phase was present for higher Mn content. Seebeck coefficient, electrical resistivity and thermal conductivity were measured from room temperature to 720 K. At 300 K, large Seebeck values were obtained, possibly due to increased effective mass on Mn substitution and low carrier concentration of the samples. At higher temperatures, transition from n-type to p-type indicated the presence of thermally generated carriers. Temperature dependent electrical resistivity showed the transition from degenerate to non-degenerate behavior. For thermal conductivity, low values (similar to 1 W/m-K at 300 K) were obtained. At higher temperatures bipolar conduction was observed, in agreement with the Seebeck and resistivity data. Due to low power factor, the maximum thermoelectric figure of merit (zT) was limited to 0.23 at 329 K for the sample with lowest Mn content (x=0.03). (C) 2015 Elsevier Ltd. All rights reserved.

Restoration Mechanisms During the Friction Stir Processing of Aluminum Alloys

In the current study, correlation of microstructure evolution with bulk crystallographic texture formation during friction stir processing (FSP) of commercial aluminum alloys has been attempted. Electron back-scattered diffraction and X-ray diffraction techniques were employed for characterizing the nugget zone of optimum friction stir processed samples. Volume fraction of measured texture components revealed that the texture formation in aluminum alloys is similar irrespective of the alloy composition. Recrystallization behavior during FSP was more of a composition dependent phenomenon.

Evolution of texture and its influence on the failure of components in some aluminium alloys

This paper describes the evolution of crystallographic texture in three of the most important high strength aluminium alloys, viz., AA2219, AA7075 and AFNOR7020 in the cold rolled and artificially aged condition. Bulk texture results were obtained by plotting pole figures from X-ray diffraction results followed by Orientation Distribution Function (ODF) analysis and micro-textures were measured using EBSD. The results indicate that the deformation texture components Cu, Bs and S, which were also present in the starting materials, strengthen with increase in amount of deformation. On the other hand, recrystallization texture components Goss and Cube weaken. The Bs component is stronger in the deformation texture. This is attributed to the shear banding. In-service applications indicate that the as-processed AFNOR7020 alloy fails more frequently compared to the other high strength Al alloys used in the aerospace industry. Detailed study of deformation texture revealed that strong Brass (Bs) component could be associated to shear banding, which in turn could explain the frequent failures in AFNOR7020 alloy. The alloying elements in this alloy that could possibly influence the stacking fault energy of the material could be accounted for the strong Bs component in the texture.

Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

Fracture behavior of magnesium alloys - Role of tensile twinning

In this work, Mode-I fracture experiments are conducted using notched compact tension specimens machined from a rolled AZ31 Mg alloy plate having near-basal texture with load applied along rolling direction (RD) and transverse direction (TD). Moderately high notched fracture toughness of J(C) similar to 46 N/mm is obtained in both RD and TD specimens. Fracture surface shows crack tunneling at specimen mid-thickness and extensive shear lips near the free surface. Dimples are observed from SEM fractographs suggesting ductile fracture. EBSD analysis shows profuse tensile twinning in the ligament ahead of the notch. It is shown that tensile twinning plays a dual role in enhancing the toughness in the notched fracture specimens with reduced triaxiality. It provides significant dissipation in the background plastic zone and imparts hardening to the material surrounding the fracture process zone via operation of several mechanisms which retards micro-void growth and coalescence. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Hydrogen-induced mechanical properties of amorphous silicon thin films

Mechanical properties of thin films such as residual stress and hardness are of paramount importance from the device fabrication point of view. Intrinsic stress in sputtered films can be tensile or compressive as decided by the number density and the energy of the plasma species striking the growing film. In the presence of hydrogen we analyzed the applicability of idealized stress reversal curve for amorphous silicon thin films deposited by DC, pulsed DC (PDC) and RF sputtering. We are successfully able to correlate the microstructure with the stress reversal and hardness. We observed a stress reversal from compressive to tensile with hydrogen incorporation. It was found that unlike in idealized stress reversal curve case, though the energy of plasma species is less in DC plasma, DC deposited films exhibit more compressive stress, followed by PDC and RF deposited films. A tendency towards tensile stress from compressive stress was observed at similar to 13, 18 and 23 at%H for DC, PDC and RF deposited films respectively, which is in exact agreement with the vacancy to void transition in the films. Regardless of the sputtering power mode, the hardness of a-Si:H films is found to be maximum at C-H similar to 10 at%H. Enhancement in hardness with C-H (up to C-H similar to 10 at%H) is attributed to increase of Si-H bonds. Beyond C-H similar to 10 at%H, hardness starts falling. (C) 2015 Elsevier Ltd. All rights reserved.

A new class of high strength high temperature Cobalt based gamma-gamma ` Co-Mo-Al alloys stabilized with Ta addition

The present paper reports a new class of Co based superalloys that has gamma-gamma' microstructure and exhibits much lower density compared to other commercially available Co superalloys including Co-Al-W based alloys. The basic composition is Co-10Al-5Mo (at%) with addition of 2 at% Ta for stabilization of gamma' phase. The gamma-gamma' microstructure evolves through solutionising and aging treatment. Using first principles calculations, we observe that Ta plays a crucial role in stabilizing gamma' phase. By addition of Ta in the basic stoichiometric composition Co-3(Al, Mo), the enthalpy of formation (Delta H-f) of L1(2) structure (gamma' phase) becomes more negative in comparison to DO19 structure. The All of the L12 structure becomes further more negative by the occupancy of Ni and Ti atoms in the lattice suggesting an increase in the stability of the gamma' precipitates. Among large number of alloys studied experimentally, the paper presents results of detailed investigations on Co-10Al-5Mo-2Ta, Co-30Ni-10Al-5Mo-2Ta and Co-30Ni-10Al-5Mo-2Ta-2Ti. To evaluate the role alloying elements, atom probe tomography investigations were carried out to obtain partition coefficients for the constituent elements. The results show strong partitioning of Ni, Al, Ta and Ti in ordered gamma' precipitates. 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Organic alloys of room temperature liquids thiophenol and selenophenol

The first examples of organic alloys of two room temperature liquids, obtained and characterized via in situ cryo-crystallography, are presented. Thiophenol and selenophenol, which exhibit isostructurality and similar modes of S center dot center dot center dot S and Se center dot center dot center dot Se homo-chalcogen interactions along with weak and rare S-H center dot center dot center dot S and Se-H center dot center dot center dot Se hydrogen bonds, are shown to form solid solutions exhibiting Veggard's law-like trends.

Effect of Surface Energy Anisotropy on the Stability of Growth Fronts in Multiphase Alloys

Eutectic growth offers a variety of examples for pattern formation which are interesting both for theoreticians as well as experimentalists. One such example of patterns is ternary eutectic colonies which arise as a result of instabilities during growth of two solid phases. Here, in addition to the two major components being exchanged between the solid phases during eutectic growth, there is an impurity component which is rejected by both solid phases. During progress of solidification, there develops a boundary layer of the third impurity component ahead of the solidification front of the two solid phases. Similar to Mullins-Sekerka type instabilities, such a boundary layer tends to make the global solidification envelope unstable to morphological perturbations giving rise to two-phase cells. This phenomenon has been studied numerically in two dimensions for the conditions of directional solidification, by Plapp and Karma (Phys Rev E 66:061608, 2002) using phase-field simulations. While, in the work by Plapp and Karma (Phys Rev E 66:061608, 2002) all interfaces are isotropic, in our presentation, we extend the phase-field model by considering interfacial anisotropy in the solid-solid and solid-liquid interfaces and characterize the role of interfacial anisotropy on the stability of the growth front through phase-field simulations in two dimensions.

Electronic and Magnetic Properties of Yttrium-doped Silicon Carbide Nanotubes: Density Functional Theory Investigations

The electronic structure of yttrium-doped Silicon Carbide Nanotubes has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom is bonded strongly on the surface of the nanotube with a binding energy of 2.37 eV and prefers to stay on the hollow site at a distance of around 2.25 angstrom from the tube. The semi-conducting nanotube with chirality (4, 4) becomes half mettalic with a magnetic moment of 1.0 mu(B) due to influence of Y atom on the surface. There is strong hybridization between d orbital of Y with p orbital of Si and C causing a charge transfer from d orbital of the Y atom to the tube. The Fermi level is shifted towards higher energy with finite Density of States for only upspin channel making the system half metallic and magnetic which may have application in spintronic devices.

On the Structural Stability of Melt Spun Ribbons of Fe95-x Zr (x) B4Cu1 (x=7 and 9) Alloys and Correlation with Their Magnetic Properties

Melt spun ribbons of Fe95-x Zr (x) B4Cu1 with x = 7 (Z7B4) and 9 (Z9B4) alloys have been prepared, and their structure and magnetic properties have been evaluated using XRD, DSC, TEM, VSM, and Mossbauer spectroscopy. The glass forming ability (GFA) of both alloys has been calculated theoretically using thermodynamical parameters, and Z9B4 alloy is found to possess higher GFA than that of Z7B4 alloy which is validated by XRD results. On annealing, the amorphous Z7B4 ribbon crystallizes into nanocrystalline alpha-Fe, whereas amorphous Z9B4 ribbon shows two-stage crystallization process, first partially to bcc solid solution which is then transformed to nanocrystalline alpha-Fe and Fe2Zr phases exhibiting bimodal distribution. A detailed phase analysis using Mossbauer spectroscopy through hyperfine field distribution of phases has been carried out to understand the crystallization behavior of Z7B4 and Z9B4 alloy ribbons. In order to understand the phase transformation behavior of Z7B4 and Z9B4 ribbons, molar Gibbs free energies of amorphous, alpha-Fe, and Fe2Zr phases have been evaluated. It is found that in case of Z7B4, alpha-Fe is always a stable phase, whereas Fe2Zr is stable at higher temperature for Z9B4. (C) The Minerals, Metals & Materials Society and ASM International 2015

The effect of alloy composition on instabilities in the beta phase of titanium alloys

A metastable nano-scale disordered precipitate with orthorhombic symmetry has been identified using high resolution scanning transmission electron microscopy. The phase, termed O', is metastable, formed by a shuffle mechanism involving a {110}<1<(1)over bar>0> transverse phonon wave in samples of Ti-26Nb-2Zr (at.%) quenched from the beta phase. The addition of 2% Zr to Ti-26Nb appears to suppress significantly the stability of both the {11 (2) over bar}<111> shear and 2/3 <111> longitudinal phonon wave but promotes the {110}<1<(1)over bar>0> transverse shuffle. This results in the nano-size O' phase being homogeneously formed in the parent beta phase matrix rather than the massive alpha `' phase. (C) 2016 Elsevier B.V. All rights reserved.

A nano-scale instability in the beta phase of dilute Ti-Mo alloys

A nano-scale instability in the beta phase resulting in the formation of the disordered orthorhombic O' phase has been discovered in a fairly dilute binary Ti-Mo alloy, using selected area electron diffraction and high resolution scanning transmission electron microscopy. The O' phase informed in the alloy when the Mo content exceeds a critical value. The instability occurs in beta-solutionized samples that have been quenched to room temperature and is found to co-exist with athermal omega to phase. Interestingly, this nano-scale instability, involving the {110}<1<(1)over bar>0> soft-phonon shuffle, occurs in the beta phase without deliberate additions of either interstitial or substitutional solutes. (C) 2016 Elsevier Ltd. All rights reserved.