Synthesis and characterization of nano silicon and titanium nitride powders using atmospheric microwave plasma technique

We have demonstrated a simple, scalable and inexpensive method based on microwave plasma for synthesizing 5 to 10 g/h of nanomaterials. Luminescent nano silicon particles were synthesized by homogenous nucleation of silicon vapour produced by the radial injection of silicon tetrachloride vapour and nano titanium nitride was synthesized by using liquid titanium tetrachloride as the precursor. The synthesized nano silicon and titanium nitride powders were characterized by XRD, XPS, TEM, SEM and BET. The characterization techniques indicated that the synthesized powders were indeed crystalline nanomaterials.

Effect of addition of aluminum on the evolution of microstructure in HITPERM class Fe44Co44Zr7B4Cu1 alloy

The paper reports the effect of the addition of small amount of Al on the microstructure and properties of HITPERM class rapidly solidified Fe44Co44Zr7B4Cu1 glassy alloy. Using three dimensional atom probe measurements we present evidence for the formation of Cu clusters on annealing in the metallic glass matrix of the Al containing alloy Fe43Co43Al2Zr7B4Cu1. Such clusters are otherwise absent in the parent alloy under similar conditions. The Cu clusters provides heterogeneous nucleation sites for the formation of bcc alpha'-FeCo phase leading to an increase in number density of this nanocrystalline phase and thereby enhancing the magnetic properties. (C) 2012 Elsevier B.V. All rights reserved.

Texture and formability studies on AA7020 Al alloy sheets

This paper deals with the influence of crystallographic texture on room temperature mechanical behavior of the sheets of the aluminum alloy AA7020 processed to different thicknesses. Three different thicknesses of the alloy sheet, namely 1, 1.85, and 3.6 mm, corresponding to different textures were investigated. Tensile tests were carried out at 0°, 45° and 90° with respect to sheet rolling direction and the resulting in-plane anisotropy in 0.2 proof stress, work hardening and plastic strain ratio (r-value) were determined. Texture derived r-values are also calculated and discussed vis-à -vis the experimentally obtained r-values. Finally the formability of the optimal alloy was studied using forming limit diagrams. Effect of natural aging, with a simulated heat treatment of 70 °C for 2 h on FLD was studied and compared with the as solutionized samples. It was observed that, the strain levels in the bi-axial region of the FLD were not much affected by the heat treatment. © 2012 Elsevier B.V. All rights reserved.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 degrees C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor-Liquid-Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst. (C) 2012 Elsevier B.V. All rights reserved.

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Probing ultrafast carrier dynamics, nonlinear absorption and refraction in core-shell silicon nanowires

We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state-filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photogenerated carrier density. Independent experimental results on crystalline silicon-on-sapphire (SOS) help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single-beam z-scan nonlinear transmission experiments at 1.57 eV in both open- and close-aperture configurations yield two-photon absorption coefficient beta (similar to 3 cm/GW) and nonlinear refraction coefficient gamma (-2.5 x 10 (-aEuro parts per thousand 4) cm(2)/GW).

Scaling Analysis of Solidification of Liquid Aluminum Alloy Flowing on Cooling Slope

Among all methods of metal alloy slurry preparation, the cooling slope method is the simplest in terms of design and process control. The method involves pouring of the melt from top, down an oblique and channel shaped plate cooled from bottom by counter flowing water. The melt, while flowing down, partially solidifies and forms columnar dendrites on plate wall. These dendrites are broken into equiaxed grains and are washed away with melt. The melt, together with the equiaxed grains, forms semisolid slurry collected at the slope exit and cast into billets having non-dendritic microstructure. The final microstructure depends on several process parameters such as slope angle, slope length, pouring superheat, and cooling rate. The present work involves scaling analysis of conservation equations of momentum, energy and species for the melt flow down a cooling slope. The main purpose of the scaling analysis is to obtain a physical insight into the role and relative importance of each parameter in influencing the final microstructure. For assessing the scaling analysis, the trends predicted by scaling are compared against corresponding numerical results using an enthalpy based solidification model with incorporation of solid phase movement.

Microstructural Evolution of A356 Al Alloy During Flow Along a Cooling Slope

Cooling slope (CS) has been used in this study to prepare semi-solid slurry of A356 Al alloy, keeping in view of slurry generation on demand for Rheo-pressure die casting process. Understanding the physics of microstructure evolution during cooling slope slurry formation is important to satisfy the need of semi-sold slurry with desired shape, size and morphology of primary Al phase. Mixture of spherical and rosette shaped primary Al phase has been observed in the samples collected during melt flow through the slope as well as in the cast (mould) samples compared to that of dendritic shape, observed in case of conventionally cast A356 alloy. The liquid melt has been poured into the slope at 650 A degrees C temperature and during flow it falls below the liquidus temperature of the said alloy, which facilitates crystallization of alpha-Al crystals on the cooling slope wall. Crystal separation due to melt flow is found responsible for nearly spherical morphology of the primary Al phase.

Evolution of Microstructure During Solidification of an Aluminium Alloy Under Stirring

In the present work, the evolution of microstructure during solidification of A356 alloy under stirring is performed experimentally in a high temperature concentric viscometer. The stirring during solidification results a semisolid slurry in the annular space between the cylinders. This slurry is removed periodically during processing using a vacuum removal quartz tube and quenched in water for micrograph analysis. From the micrograph analysis, the shape, stacking arrangement and corresponding microstructural evolution of the suspended primary particles in the slurry are studied. The work also predicts the fraction of solid present in the extracted slurry. Finally, the effect of microstructure and the solid-fraction on the slurry viscosity is presented.

A model for growth and engulfment of gas microporosity during aluminum alloy solidification process

A new coupled approach is presented for modeling the hydrogen bubble evolution and engulfment during an aluminum alloy solidification process in a micro-scale domain. An explicit enthalpy scheme is used to model the solidification process which is coupled with a level-set method for tracking the hydrogen bubble evolution. The volume averaging techniques are used to model mass, momentum, energy and species conservation equations in the chosen micro-scale domain. The interaction between the solid, liquid and gas interfaces in the system have been studied. Using an order-of-magnitude study on growth rates of bubble and solid interfaces, a criterion is developed to predict bubble elongation which can occur during the engulfment phase. Using this model, we provide further evidence in support of a conceptual thought experiment reported in literature, with regard to estimation of final pore shape as a function of typical casting cooling rates. The results from the proposed model are qualitatively compared with in situ experimental observations reported in literature. The ability of the model to predict growth and movement of a hydrogen bubble and its subsequent engulfment by a solidifying front has been demonstrated for varying average cooling rates encountered in typical sand, permanent mold, and various casting processes. (C) 2012 Elsevier B.V. All rights reserved.

Effect of length scale on mechanical properties of Al-Cu eutectic alloy

This paper attempts a quantitative understanding of the effect of length scale on two phase eutectic structure. We first develop a model that considers both the elastic and plastic properties of the interface. Using Al-Al2Cu lamellar eutectic as model system, the parameters of the model were experimentally determined using indentation technique. The model is further validated using the results of bulk compression testing of the eutectics having different length scales. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4761944]

Texture evolution in high strain rate deformed Cu-10Zn alloy

High strain rate deformation behavior of Cu-10Zn alloy was studied. A weak texture with fine grain size was observed at high strain rate. The weak texture has been attributed to activity of higher number of slip systems under dynamic loading conditions. Twinning has minimal role on texture. (C) 2012 Elsevier B.V. All rights reserved.

Metal and Alloy Nanoparticles by Amine-Borane Reduction of Metal Salts by Solid-Phase Synthesis: Atom Economy and Green Process

A new solid state synthetic route has been developed toward metal and bimetallic alloy nanoparticles from metal salts employing amine-boranes, as the reducing agent. During the reduction, amine-borane plays a dual role: acts as a reducing agent and reduces the metal salts to their elemental form and simultaneously generates a stabilizing agent in situ which controls the growth of the particles and stabilizes them in the nanosize regime. Employing different amine-boranes with differing reducing ability (ammonia borane (AB), dimethylamine borane (DMAB), and triethylamine borane (TMAB)) was found to have a profound effect on the particle size and the size distribution. Usage of AB as the reducing agent provided the smallest possible size with best size distribution. Employment of TMAB also afforded similar results; however, when DMAB was used as the reducing agent it resulted in larger sized nanoparticles that are polydisperse too. In the AB mediated reduction, BNHx polymer generated in situ acts as a capping agent whereas, the complexing amine of the other amine-boranes (DMAB and TMAB) play the same role. Employing the solid state route described herein, monometallic Au, Ag, Cu, Pd, and Ir and bimetallic CuAg and CuAu alloy nanoparticles of <10 nm were successfully prepared. Nucleation and growth processes that control the size and the size distribution of the resulting nanoparticles have been elucidated in these systems.

A novel gas flow sensing application using piezoelectric ZnO thin films deposited on Phynox alloy

We report on the novel flow sensing application of piezoelectric ZnO thin film deposited on Phynox alloy sensing element. Characterization of piezoelectric ZnO films deposited on Phynox (Elgiloy) substrate at different RF powers is discussed. ZnO films deposited at RF power of 100W were found to have fine c-axis orientation, possesses excellent surface morphology with lower rms surface roughness of 1.87 nm and maximum d(31) coefficient value 4.7 pm V-1. The thin cantilever strip of Phynox alloy with ZnO film as a sensing layer for flow sensing has been tested for flow rates ranging from 2 to 18 L min(-1). A detailed theoretical analysis of the experimental set-up showing the relationship between output voltage and force at a particular flow rate has been discussed. The sensitivity of now sensing element is similar to 18 mV/(L min(-1)) and typical response time is of the order of 20 m s. The sensing element is calibrated using in-house developed testing set-up. (C) 2012 Elsevier B.V. All rights reserved.