Diffusion Parameters and Growth Mechanism of Phases in the Cu-Sn System

The tracer diffusion coefficients of the elements as well as the integrated interdiffusion coefficients are determined for the Cu3Sn and Cu6Sn5 intermetallic compounds using incremental diffusion couples and Kirkendall marker shift measurements. The activation energies are determined for the former between 498 K and 623 K (225 A degrees C and 350 A degrees C) and for the latter between 423 K and 473 K (150 A degrees C and 200 A degrees C). Sn is found to be a slightly faster diffuser in Cu6Sn5, and Cu is found to be the faster diffuser in Cu3Sn. The results from the incremental couples are used to predict the behavior of a Cu/Sn couple where simultaneous growth of both intermetallics occurs. The waviness at the Cu3Sn/Cu6Sn5 interface and possible reasons for not finding Kirkendall markers in both intermetallics in the Cu/Sn couple are discussed.

Methanol oxidation on carbon-supported Pt---Sn electrodes in silicotungstic acid

Electro-oxidation of methanol was studied on carbon-supported Pt---Sn/C electrodes in silcotungstic acid (SiWA) at various concentrations. The porous-carbon electrodes employing Pt---Sn/C catalyst have been characterized using chemical analyses, X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) in conjunction with electrochemistry. The presence of Pt---Sn and Pt3Sn alloys along with Pt and SnO2 phases in the catalyst were identified by XRD. XPS analysis showed a lower amount of PtO species in the Pt---Sn/C catalyst with respect to the corresponding Pt/C sample. From the steady-state galvanostatic polarization data on Pt---Sn/C electrodes in SiWA, it is inferred that a one-electron process is the rate determining step. The performance of the electrodes in 0.084 M SiWA was better than in 2.5 M H2SO4 under similar conditions up to load currents of about 100 mA cm−2 indicating the promoting behaviour of the electrolyte. At currents larger than 100 mA cm−2, the performance of the electrodes in 0.084 SiWA was poorer than that in 2.5 M H2SO4 mainly due to the dominance of mass polarization in the former owing to the large size of keggin units associated with the structure of SiWA. This aspect was supported by cyclic voltammetry and ac impedance studies on Pt---Sn/C electrodes. Simulation of the electrochemical impedance response for the oxidation of methanol in SiWA was carried out using the equivalent electrical circuit model.

Methanol oxidation on carbon-supported Pt---Sn electrodes in silicotungstic acid

Electro-oxidation of methanol was studied on carbon-supported Pt-Sn/C electrodes in silcotungstic acid (SiWA) at various concentrations. The porous-carbon electrodes employing Pt-Sn/C catalyst have been characterized using chemical analyses, X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) in conjunction with electrochemistry. The presence of Pt-Sn and Pt3Sn alloys along with Pt and SnO2 phases in the catalyst were identified by XRD. XPS analysis showed a lower amount of PtO species in the Pt-Sn/C catalyst with respect to the corresponding Pt/C sample. From the steady-state galvanostatic polarization data on Pt-Sn/C electrodes in SiWA, it is inferred that a one-electron process is the rate determining step. The performance of the electrodes in 0.084 M SiWA was better than in 2.5 M H2SO4 under similar conditions up to load currents of about 100 mA cm-2 indicating the promoting behaviour of the electrolyte. At currents larger than 100 mA cm-2, the performance of the electrodes in 0.084 SiWA was poorer than that in 2.5M H2SO4 mainly due to the dominance of mass polarization in the former owing to the large size of Keggin units associated with the structure of SiWA. This aspect was supported by cyclic voltammetry and ac impedance studies on Pt-Sn/C electrodes. Simulation of the electrochemical impedance response for the oxidation of methanol in SiWA was carried out using the equivalent electrical circuit model.

Morphology and thermal characteristics of nano-sized Pb-Sn inclusions in Al

Nanoembedded aluminum alloys with bimetallic dispersoids of Sn and Pb of compositions Sn-82-Pb-18,Pb- Sn-64-Pb-36, and Sn-54-Pb-46 were synthesized by rapid solidification. The two phases, face-centered-cubic Pb and tetragonal Sn solid-solution, coexist in all the particles. The crystallographic relation between the two phases and the matrix depends upon the solidification pathways adopted by the particles. For Al-(Sn-82-Pb-18), we report a new orientation relation given by [011]Al//[010]Sn and (011)Al//(101)Sn. Pb exhibits a cube-on-cube orientation with Al in few particles, while in others no orientation relationship could be observed. In contrast, Pb in Sn-64-Pb-36 and Sn-54-Pb-46 particles always exhibits cube-on-cube orientation with the matrix. Sn does not show any orientation relationship with Al or Pb in these cases. Differential scanning calorimetry studies revealed melting at eutectic temperature for all compositions, although solidification pathways are different. Attempts were made to correlate these with the melting and heterogeneous nucleation. characteristics.

Pyrochlore ``dynamic spin-ice'' Pr(2)Sn(2)O(7) and monoclinic Pr(2)Ti(2)O(7): A comparative temperature-dependent Raman study

Here we report a temperature-dependent Raman study of the pyrochlore ``dynamic spin-ice'' compound Pr(2)Sn(2)O(7) and compare the results with its non-pyrochlore (monoclinic) counterpart Pr(2)Ti(2)O(7). In addition to phonon modes, we observe two bands associated with electronic Raman scattering involving crystal field transitions in Pr(2)Sn(2)O(7) at similar to 135 and 460 cm(-1) which couple strongly to phonons. Anomalous temperature dependence of phonon frequencies that are observed in Pyrochlore Pr(2)Sn(2)O(7) are absent in monoclinic Pr(2)Ti(2)O(7). This, therefore, confirms that the strong phonon-phonon anharmonic interactions, responsible for the temperature-dependent anomalous behavior of phonons, arise due to the inherent vacant sites in the pyrochlore structure. (C) 2011 Elsevier Inc. All rights reserved.

The effect of electrochemical lithiation on physicochemical properties of RF-sputtered Sn thin films

Thin films of Sn were deposited on Pt/Si substrates by sputtering technique and subjected to electrochemical lithiation studies. Electrochemical lithiation of Sn resulted in the formation of Sn-Li alloys of different compositions. Charging of Sn-coated Pt/Si electrodes was terminated at different potentials and the electrodes were examined for physicochemical properties. The scanning electron microscopy and atomic force microscopy images suggested that the Sn films expanded on lithiation. Roughness of the film increased with an increase in the quantity of Li present in Sn-Li alloy. Electrochemical impedance data suggested that the kinetics of charging became sluggish with an increase in the quantity of Li in Sn-Li alloy.

Solute solute and solvent solute interactions in solid solutions of Cu+Sn, Au+Sn and Cu+Au+Sn alloys

The chemical potentials of tin in its α-solid solutions with Cu, Au and Cu + Au alloys have been measured using a gas-solid equilibration technique. The variation of the excess chemical potential of tin with its composition in the alloy is related to the solute-solute repulsive interaction, while the excess chemical potential at infinite dilution of the solute is a measure of solvent-solute interaction energies. It is shown that solute-solute interaction is primarily determined by the concentration of (s + p) electrons in the conduction band, although the interaction energies are smaller than those predicted by either the rigid band model or calculation based on Friedel oscillations in the potential function. Finally, the variation of the solvent-solute interaction with solvent composition in the ternary system can be accounted for in terms of a quasi-chemical treatment which takes into account the clustering of the solvent atoms around the solute.

Heat of Mixing and Activities in Liquid Al-Sn Alloys

The microscopic electron theory based on the pseudopotential formalism has been applied to the calculation of the heats of mixing and of activities in liquid Al·Sn alloys. The calculated values for both quantities were found to be in reasonable agreement with ,the experimental data.

The electrical switching and thermal behavior of bulk Ge(15)Te(85-x)Sn(x) and Ge(17)Te(83-x)Sn(x) glasses

Bulk Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses, are found to exhibit memory type electrical switching. The switching voltages (V(t)) and thermal stability of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses are found to decrease with Sn content. The composition dependence of v, has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge-Te-Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses. (C) 2011 Elsevier B.V. All rights reserved.

Kinetics of carbon monoxide oxidation with Sn(0.95)M(0.05)O(2-delta) (M = Cu, Fe, Mn, Co) catalysts

Base metal substituted Sn(0.95)M(0.05)O(2-delta) (M = Cu, Fe, Mn, Co) catalysts were synthesized by the solution combustion method and characterized by XRD, XPS, TEM and BET surface area analysis. The catalytic activities of these materials were investigated by performing CO oxidation. The rates and the apparent activation energies of the reaction for CO oxidation were determined for each catalyst. All the substituted catalysts showed high rates and lower activation energies for the oxidation of CO as compared to unsubstituted SnO(2). The rate was found to be much higher over copper substituted SnO(2) as compared to other studied catalysts. 100% CO conversion was obtained below 225 degrees C over this catalyst. A bifunctional reaction mechanism was developed that accounts for CO adsorption on base metal and support ions and O(2) dissociation on the oxide ion vacancy. The kinetic parameters were determined by fitting the model to the experimental data. The high rates of the CO oxidation reactions at low temperatures were rationalized by the high dissociative chemisorption of adsorbed O(2) over these catalysts.

Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films

Amorphous thin film Ge15Te85-xSnx (1 <= x <= 5) and Ge17Te83-xSnx (1 <= x <= 4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge15Te85-xSnx and Ge17Te83-xSnx amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge15Te85-xSnx and Ge17Te83-xSnx thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.

Morphology dependent electrochemical performance of sputter deposited Sn thin films

This study deals with tailoring of the surface morphology, microstructure, and electrochemical properties of Sn thin films deposited by magnetron sputtering with different deposition rates. Scanning electron microscopy and atomic force microscopy are used to characterize the film surface morphology. Electrochemical properties of Sn thin film are measured and compared by cyclic voltammetry and charge-discharge cycle data at a constant current density. Sn thin film fabricated with a higher deposition rate exhibited an initial discharge capacity of 798 mAh g(-1) but reduced to 94 mAh g(-1) at 30th cycle. Film deposited with lower deposition rate delivered 770 mAh g(-1) during 1st cycle with improved capacity retention of 521 mAh g(-1) on 30th cycle. Comparison of electrochemical performances of these films has revealed important distinctions, which are associated with the surface morphology and hence on rate of deposition. (C) 2012 Elsevier Ltd. All rights reserved.

Vacancy wind effect on interdiffusion in a dilute Cu(Sn) solid solution

A study has been conducted on a Cu(Sn) solid solution to examine the role of the vacancy wind effect on interdiffusion. First, the interdiffusion and the intrinsic diffusion coefficients are calculated. The trend of the interdiffusion coefficients is explained with the help of the driving force. Following this, the tracer diffusion coefficients of the species are calculated with and without consideration of the vacancy wind effect. We found that the role of the vacancy wind is negligible on the minor element in a dilute solid solution, which is the faster diffusing species in this system and controls the interdiffusion process. However, consideration of this effect is important to understand the diffusion rate of the major element, which is the slower diffusing species in this system.

Influence of Sn doping on structural, optical and electrical properties of ZnO thin films prepared by cost effective sol-gel process

Tin (Sn) doped zinc oxide (ZnO) thin films were synthesized by sol-gel spin coating method using zinc acetate di-hydrate and tin chloride di-hydrate as the precursor materials. The films were deposited on glass and silicon substrates and annealed at different temperatures in air ambient. The agglomeration of grains was observed by the addition of Sn in ZnO film with an average grain size of 60 nm. The optical properties of the films were studied using UV-VIS-NIR spectrophotometer. The optical band gap energies were estimated at different concentrations of Sn. The MOS capacitors were fabricated using Sn doped ZnO films. The capacitance-voltage (C-V), dissipation vs. voltage (D-V) and current-voltage (I-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated. The porosity and surface area of the films were increased with the doping of Sn which makes these films suitable for opto-electronic applications. (C) 2012 Elsevier B.V. All rights reserved.