Deoxidation of liquid copper: effect of phosphorus on oxygen activity

An analysis of the deoxidation of liquid copper is made by use of an Ellingham-type diagram, which incorporates data now available on interactions between copper and the deoxidant in solution. To make the diagram more quantitative information is required on interactions between oxygen and the deoxidants and the activities of component oxides in slags of interest in copper smelting.

Fatigue Crack Growth Study and Remaining Life Assessment of High Strength and Ultra High Strength Concrete Beams

This paper presents the details of crack growth study and remaining life assessment of concrete specimens made up of high strength concrete (HSC, HSC1) and ultra high strength concrete (UHSC). Flexural fatigue tests have been conducted on HSC, HSC1 and UHSC beams under constant amplitude loading with a stress ratio of 0.2. It is observed from the studies that (i) the failure patterns of HSC1 and UHSC beams indicate their ductility as the member was intact till the crack propagated up to 90% of the beam depth and (ii) the remaining life decreases with increase of notch depth (iii) the failure of the specimen is influenced by the frequency of loading. A ``Net K'' model has been proposed by using non-linear fracture mechanics principles for crack growth analysis and remaining life prediction. SIF (K) has been computed by using the principle of superposition. SIP due to the cohesive forces applied on the effective crack face inside the process zone has been obtained through Green's function approach by applying bi-linear tension softening relationship to consider the cohesive the stresses acting ahead of the crack tip. Remaining life values have been have been predicted and compared with the corresponding experimental values and observed that they are in good agreement with each other.

Probing 2D black phosphorus by quantum capacitance measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (similar to six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements.