An analysis on WDM components in flat gain regions of EDFA

Wavelength-division multiplexing (WDM) technology, by which multiple optical channels can be simultaneously transmitted at different wavelengths through a single optical fiber, is a useful means of making full use of the low-loss characteristics of optical fibers over a wide-wavelength region. The present day multifunction RADARs with multiple transmit receive modules requires various kinds of signal distribution for real time operation. If the signal distribution can be achieved through optical networks by using Wavelength Division Multiplexing (WDM) methods, it results in a distribution scheme with less hardware complexity and leads to the reduction in the weight of the antenna arrays In addition, being an Optical network it is free from Electromagnetic interference which is a crucial requirement in an array environment. This paper discusses about the analysis performed on various WDM components of distribution optical network for radar applications. The analysis is performed by considering the feasible constant gain regions of Erbium doped fiber amplifier (EDFA) in Matlab environment. This will help the user in the selection of suitable components for WDM based optical distribution networks.

An approximately H-1-optimal Petrov-Galerkin meshfree method: application to computation of scattered light for optical tomography

Nearly pollution-free solutions of the Helmholtz equation for k-values corresponding to visible light are demonstrated and verified through experimentally measured forward scattered intensity from an optical fiber. Numerically accurate solutions are, in particular, obtained through a novel reformulation of the H-1 optimal Petrov-Galerkin weak form of the Helmholtz equation. Specifically, within a globally smooth polynomial reproducing framework, the compact and smooth test functions are so designed that their normal derivatives are zero everywhere on the local boundaries of their compact supports. This circumvents the need for a priori knowledge of the true solution on the support boundary and relieves the weak form of any jump boundary terms. For numerical demonstration of the above formulation, we used a multimode optical fiber in an index matching liquid as the object. The scattered intensity and its normal derivative are computed from the scattered field obtained by solving the Helmholtz equation, using the new formulation and the conventional finite element method. By comparing the results with the experimentally measured scattered intensity, the stability of the solution through the new formulation is demonstrated and its closeness to the experimental measurements verified.

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE

The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. (C) 2012 Elsevier Ltd. All rights reserved.