Synchrotron Study of the Dynamical Effects in the LVV Auger Transitions in the First-Row Transition Elements

The intensity ratio between L2-M45M45 and L3-M45M45 spectral features for both Fe and Co indicates significant tranfer of intensity from L2- to L3-M45M45 region due to Coster-Kronig L2-M45M45 transition. The L2-L3M45 transition can be suppressed by turning the photon energy between the L2 and L3 thresholds; however, the L3-M45M45 spectral shapes for Fe and Co do not change very significantly even at these photom energies unlike the cases of Ni, Cu and Zn, thus establishing that the M45-hole decays predominantly before the L3-hole Auger decay in the early transition elements in contrast to the late ones.

Study of electron states of solids by techniques of electron spectroscopy

Studies of valence bands and core levels of solids by photoelectron spectroscopy are described at length. Satellite phenomena in the core level spectra have been discussed in some detail and it has been pointed out that the intensity of satellites appearing next to metal and ligand core levels critically depends on the metal-ligand overlap. Use of photoelectron spectroscopy in investigating metal-insulator transitions and spin-state transitions in solids is examined. It is shown that relative intensities of metal Auger lines in transition metal oxides and other systems provide valuable information on the valence bands. Occurrence of interatomic Auger transitions in competition with intraatomic transitions is discussed. Applications of electron energy loss spectroscopy and other techniques of electron spectroscopy in the study of gas-solid interactions are briefly presented.

Novel ultrahigh resolution silverless photothermal imaging in obliquely deposited amorphous Se-Ge films

A new photothermal imaging process which utilizes no silver has been demonstrated in obliquely deposited Se-Ge films. Band-gap irradiation of Se-Ge films has been found to give rise to phases of the type SeOx, GeO, and Se as borne by x-ray initiated Auger electron spectroscopy and x-ray photoelectron spectroscopy. Annealing of SeOx leads to the formation of SeO2. The large (several orders of magnitude) difference in vapor pressures of SeO2 and Se-Ge films results in differential evaporation of the films when annealed around 200 °C, thereby leading to imaging. Such a large contrast in evaporation rates between the exposed and unexposed regions has great potential applications in high resolution image storage and phase holography. Applied Physics Letters is copyrighted by The American Institute of Physics.

Evidence for peroxide and Cul+ species in La1.8Sro.2Cu04 from photo-emission studies

Employing photo-emission and Auger electron spectroscopy, it is shown that La, ,Sr&uO,contains 0:- -typespeciesandCu'+ ions, proportionsof these speciesincrease with decreasing temperature. These species may play an important role in the high-temperature superconductivity of this oxide.

Depth profile composition studies of thin film CdS: Cu,S solar cells using XPS and AES

Surface composition and depth profile studies of hemiplated thin film CdS:CuzS solar cells have been carried out using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) techniques. These studies indicate that the junction is fairly diffused in the as-prepared cell. However, heat treatment of the cell at 210°C in air relatively sharpens the junction and improves the cell performance. Using the Cu(2p3p)/S(2p) ratio as well as the Cu(LVV)/(LMM) Auger intensity ratio, it can be inferred that the nominal valency of copper in the layers above the junction is Cut and it is essentially in the CUSS form. Copper signals are observed from layers deep down in the cell. These seem to appear mostly from the grain boundary region. From the observed concentration of Cd, Cu and S in these deeper layers and the Cu(LVV)/(LMM) ratio it appears that the signals from copper essentially originate partly from copper in CuS and partly from Cu2t trapped in the lattice. It is significant to note that the nominal valence state of copper changes rather abruptly from Cut to Cuz+ across the junction.

Interaction of carbon monoxide with transition metal surfaces

XPS studies of the interaction of carbon monoxide with surfaces of Fe, Co and Ni indicate that at 300 K, the disproportionation reaction is prominent up to exposures of 103 L giving rise to high surface concentrations of carbon. At higher exposures and higher temperatures, dissociation of carbon monoxide accompanied by the formation of surface oxide layers becomes more prominent. In the case of copper, disproportionation is prominent up to 104 L even at 500 K followed by dissociation at higher exposures. These results are also supported by Auger spectroscopic studies.

Molecularly adsorbed oxygen on metals: electron spectroscopic studies

Oxygen is shown to adsorb molecularly on gold as well as on Ag and Pt. UV and X-ray photoelectron spectroscopy and Auger electron spectroscopy have been employed to investigate electron states of molecularly adsorbed oxygen.

Molecularly adsorbed oxygen on metals: electron spectroscopic studies

Oxygen is shown to adsorb molecularly on gold as well as on Ag and Pt. UV and X-ray photoelectron spectroscopy and Auger electron spectroscopy have been employed to investigate electron states of molecularly adsorbed oxygen.

An electron spectroscopic study of the surface oxidation of glassy and crystalline Cu-Zr alloys

Surface oxidation of three metglasses in the Cu-Zr system has been investigated by employing X-ray photoelectron spectroscopy and Auger electron spectroscopy with a view to comparing their oxidation behaviour with that of the corresponding crystalline states of the alloys. Surface oxidation of pure Zr metal has also been examined in detail using these techniques. Sub-oxides of Zr are formed during the initial stages of oxidation of Zr (at oxygen exposures <10L), while at higher exposures, ZrO2 is formed together with the highest possible sub-oxide which the authors designate as 'ZrO'. The relative proportion of 'ZrO' goes through a maximum in the range 25-50 L. Both the glassy and the crystalline states of the Cu-Zr alloys exhibit preferential oxidation of Zr. The glassy alloys exhibit a higher rate of oxidation at intermediate exposures compared with the crystalline states of the alloys; the extent of oxidation at higher oxygen exposures is, however, higher for crystalline alloys. Interatomic Auger transitions have been found in the Zr+O2 system as well as in Cu-Zr alloys.

Investigations of oxide superconductors by x-ray absorption, photoemission and cognate spectroscopies

X-ray absorption spectra, X-ray photoelectron spectra and Auger spectra of cuprate superconductors are discussed. The studies establish the absence of Cu3+ for all practical purposes, but point out the importance of oxygen holes. X-ray photoelectron spectra of BaBi0.25Pb0.75O3 and related compounds are also examined.

Nature of copper in the new cuprate superconductors Pb2Sr2Ca1-xLxCu3O8+δ

Based on Cu K-edge absorption spectroscopy as well as Cu(2p3/2) and Cu(LVV) Auger spectroscopies it is shown that the recently discovered Pb2Sr2Ca1-xLxCu3O8+δ (L=Y or Lu) superconductors contain well-defined Cu1+ species in admixture with Cu2+. The proportion of Cu1+ is small in the nonsuperconducting samples with x=1, a feature which is uniquely different from that in YBa2Cu3O7-δ.

High contrast laser writing in insitu textured germanium films via a novel chemical oxide formation

A high contrast laser writing technique based on laser induced efficient chemical oxidation in insitu textured Ge films is demonstrated. Free running Nd-YAG laser pulses are used for irradiating the films. The irradiation effects have been characterised using optical microscopy, electron spectroscopy and microdensitometry. The mechanism for the observed contrast has been identified as due to formation of GeO2 phase upon laser irradiation using X-ray initiated Auger spectroscopy (XAES) and X-ray photoelectron spectroscopy (XPS). The contrast in the present films is found to be nearly five times more than that known due to GeO phase formation in similar films.

Synthesis and characterization of Ti5Te4-type molybdenum cluster compounds, AxMo5As4(A = Cu, Al, or Ga)

A new series of molybdenum cluster compounds of the general formula AxMo5As4(A = Cu, Al, or Ga) has been synthesized. They are isostructural with the host Mo5As4(Ti5Te4-type) consisting of trans-vertex shared Mo6 octahedral chains. Investigations by X-ray photoelectron and Auger electron spectroscopies revealed a charge transfer from A to Mo5As4 in AxMo5As4. The occurrence of metallic (CuxMo5As4) and non-metallic (Al2Mo5As4 and Ga2Mo5As4) properties in this isostructural series of solids is consistent with the electronic structure of Ti5Te4-type solids involving M–M bonding in the cluster chains.

Electronic structure of La1-xSrxFeO3

We have investigated the electronic structure of well-characterized samples of La1-xSrxFeO3 (x=0.0�0.4) by x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy, bremsstrahlung isochromat (BI) spectroscopy, and Auger electron spectroscopy. We find systematic behavior in the occupied and unoccupied density of states reflecting changes in the electronic structure on hole doping via Sr substitution as well as providing estimates for different interaction strengths. The spectral features, particularly of the unoccupied states obtained from BI spectra, indicate the probable reason for the absence of an insulator-metal transition in this series. Analysis of the Auger spectra provides the estimates of the on-site effective Coulomb interaction strengths in Fe 3d and O 2p states. The parameter values for the bare charge-transfer energy ? and the Fe 3d�O 2p hybridization strength t? for LaFeO3 are obtained from an analysis of the Fe 2p core-level XPS in terms of a model many-body calculation. We discuss the character of the ground state in LaFeO3 as well as the nature of the doped hole states in La1-xSrxFeO3, based on these parameter values.

Electron spectroscopic investigation of the semiconductor-metal transition in La1-xSrxMnO3

We study the electronic structure of La1-xSrxMnO3+δ, x=0, 0.1, 0.2, 0.3, and 0.4, across the semiconductor-metal transition, using various electron spectroscopy techniques. The negligible intensity seen at EF using ultraviolet photoemission spectroscopy and bremsstrahlung isochromat spectroscopy (BIS) indicate an unusual semiconductor-metal transition observed for x≥0.2, consistent with the resistivity data. The BIS spectra show doped hole states developing about 1.4 eV above EF as a function of x. Auger electron spectroscopy gives an estimate of the intra-atomic Coulomb energy in the O 2p manifold to be about 6.8 eV. The Mn 2p core-level spectrum of LaMnO3, analyzed in terms of a configuration-interaction calculation, gives parameter values of the charge-transfer energy Δ=5.0 eV, the hybridization strength between Mn 3d and O 2p states, t=3.8 eV, and the on-site Coulomb energy in Mn 3d states Udd=4.0 eV, suggesting a mixed character for the ground state of LaMnO3.