Curvature-constrained trajectory generation for waypoint following for miniature air vehicle

This paper addresses trajectory generation problem of a fixed-wing miniature air vehicle, constrained by bounded turn rate, to follow a given sequence of waypoints. An extremal path, named as g-trajectory, that transitions between two consecutive waypoint segments (obtained by joining two waypoints in sequence) in a time-optimal fashion is obtained. This algorithm is also used to track the maximum portion of waypoint segments with the desired shortest distance between the trajectory and the associated waypoint. Subsequently, the proposed trajectory is compared with the existing transition trajectory in the literature to show better performance in several aspects. Another optimal path, named as loop trajectory, is developed for the purpose of tracking the waypoints as well as the entire waypoint segments. This paper also proposes algorithms to generate trajectories in the presence of steady wind to meet the same objective as that of no-wind case. Due to low computational burden and simplicity in the design procedure, these trajectory generation approaches are implementable in real time for miniature air vehicles.

Path Following Using Trajectory Shaping Guidance

Unmanned vehicle path following by pursuing a virtual target moving along the path is considered. Limitations for pure pursuit guidance are analyzed while following the virtual target on curved paths. Trajectory shaping guidance is proposed as an alternate guidance scheme for a general curvature path. It is proven that under certain tenable assumptions trajectory shaping guidance yields an identical path as that of the virtual target. By linear analysis it is shown that the convergence to the path for trajectory shaping guidance is twice as fast as pure pursuit. Simulations highlight significant improvement in position errors by using trajectory shaping guidance. Comparative simulation studies comply with analytic findings and present better performance as compared with pure pursuit and a nonlinear guidance methodology from the literature. Experimental validation supports the analytic and simulations studies as the guidance laws are implemented on a radio-controlled car in a laboratory environment.

On the ultrafast charge migration and subsequent charge directed reactivity in Cl center dot center dot center dot N halogen-bonded clusters following vertical ionization

In this article, we have presented ultrafast charge transfer dynamics through halogen bonds following vertical ionization of representative halogen bonded clusters. Subsequent hole directed reactivity of the radical cations of halogen bonded clusters is also discussed. Furthermore, we have examined effect of the halogen bond strength on the electron-electron correlation-and relaxation-driven charge migration in halogen bonded complexes. For this study, we have selected A-Cl (A represents F, OH, CN, NH2, CF3, and COOH substituents) molecules paired with NH3 (referred as ACl:NH3 complex): these complexes exhibit halogen bonds. To the best of our knowledge, this is the first report on purely electron correlation-and relaxation-driven ultrafast (attosecond) charge migration dynamics through halogen bonds. Both density functional theory and complete active space self-consistent field theory with 6-31+G(d, p) basis set are employed for this work. Upon vertical ionization of NCCl center dot center dot center dot NH3 complex, the hole is predicted to migrate from the NH3-end to the ClCN-end of the NCCl center dot center dot center dot NH3 complex in approximately 0.5 fs on the D-0 cationic surface. This hole migration leads to structural rearrangement of the halogen bonded complex, yielding hydrogen bonding interaction stronger than the halogen bonding interaction on the same cationic surface. Other halogen bonded complexes, such as H2NCl:NH3, F3CCl:NH3, and HOOCCl:NH3, exhibit similar charge migration following vertical ionization. On the contrary, FCl:NH3 and HOCl:NH3 complexes do not exhibit any charge migration following vertical ionization to the D-0 cation state, pointing to interesting halogen bond strength-dependent charge migration. (C) 2015 AIP Publishing LLC.

Effect of Ga content in Cu(Ga) on the growth of V3Ga following bronze technique

Diffusion controlled growth rate of V3Ga in the Cu(Ga)/V system changes dramatically because of a small change in Ga content in Cu(Ga). One atomic percent increase from 15 to 16 leads to more than double the product phase layer thickness and a decrease in activation energy from 255 to 142 kJ/mol. Kirkendall marker experiment indicates that V3Ga grows because of diffusion of Ga. Role of different factors influencing the diffusion rate of Ga and high growth rate of V3Ga are discussed. (C) 2015 Elsevier Ltd. All rights reserved.