Tight co-degree condition for perfect matchings in 4-graphs

We will give a tight minimum co-degree condition for a 4-uniform hypergraph to contain a perfect matching.

Junction between surfaces of two topological insulators

We study the properties of a line junction which separates the surfaces of two three-dimensional topological insulators. The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs. For a time-reversal invariant system, we show that the line junction is characterized by an arbitrary parameter alpha which determines the scattering from the junction. If the surface velocities have the same sign, we show that there can be edge states which propagate along the line junction with a velocity and spin orientation which depend on alpha and the ratio of the velocities. Next, we study what happens if the two surfaces are at an angle phi with respect to each other. We study the scattering and differential conductance through the line junction as functions of phi and alpha. We also find that there are edge states which propagate along the line junction with a velocity and spin orientation which depend on phi. Finally, if the surface velocities have opposite signs, we find that the electrons must transmit into the two-dimensional interface separating the two topological insulators.

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Transport across a junction of topological insulators and a superconductor

We study transport across a line junction lying between two orthogonal topological insulator surfaces and a superconductor which can have either s-wave (spin-singlet) or p-wave (spin-triplet) pairing symmetry. The junction can have three time-reversal invariant barriers on three sides. We compute the charge and the spin conductance across such a junction and study their behaviors as a function of the bias voltage applied across the junction and the three parameters used to characterize the barrier. We find that the presence of topological insulators and a superconductor leads to both Dirac- and Schrodinger-like features in charge and spin conductances. We discuss the effect of bound states on the superconducting side of the barrier on the conductance; in particular, we show that for triplet p-wave superconductors, such a junction may be used to determine the spin state of its Cooper pairs. Our study reveals that there is a nonzero spin conductance for some particular spin states of the triplet Cooper pairs; this is an effect of the topological insulators which break the spin rotation symmetry. Finally, we find an unusual satellite peak (in addition to the usual zero bias peak) in the spin conductance for p-wave symmetry of the superconductor order parameter.

An infinite family of tight triangulations of manifolds

We give explicit construction of vertex-transitive tight triangulations of d-manifolds for d >= 2. More explicitly, for each d >= 2, we construct two (d(2) + 5d + 5)-vertex neighborly triangulated d-manifolds whose vertex-links are stacked spheres. The only other non-trivial series of such tight triangulated manifolds currently known is the series of non-simply connected triangulated d-manifolds with 2d + 3 vertices constructed by Kuhnel. The manifolds we construct are strongly minimal. For d >= 3, they are also tight neighborly as defined by Lutz, Sulanke and Swartz. Like Kuhnel complexes, our manifolds are orientable in even dimensions and non-orientable in odd dimensions. (c) 2013 Elsevier Inc. All rights reserved.

Non-existence of tight neighborly triangulated manifolds with beta(1)=2

All triangulated d-manifolds satisfy the inequality ((f0-d-1)(2)) >= ((d+2)(2))beta(1) for d >= 3. A triangulated d-manifold is called tight neighborly if it attains equality in this bound. For each d >= 3, a (2d + 3)-vertex tight neighborly triangulation of the Sd-1-bundle over S-1 with beta(1) = 1 was constructed by Kuhnel in 1986. In this paper, it is shown that there does not exist a tight neighborly triangulated manifold with beta(1) = 2. In other words, there is no tight neighborly triangulation of (Sd-1 x S-1)(#2) or (Sd-1 (sic) S-1)(#2) for d >= 3. A short proof of the uniqueness of K hnel's complexes for d >= 4 under the assumption beta(1) not equal 0 is also presented.

A provably tight delay-driven concurrently congestion mitigating global routing algorithm

Routing is a very important step in VLSI physical design. A set of nets are routed under delay and resource constraints in multi-net global routing. In this paper a delay-driven congestion-aware global routing algorithm is developed, which is a heuristic based method to solve a multi-objective NP-hard optimization problem. The proposed delay-driven Steiner tree construction method is of O(n(2) log n) complexity, where n is the number of terminal points and it provides n-approximation solution of the critical time minimization problem for a certain class of grid graphs. The existing timing-driven method (Hu and Sapatnekar, 2002) has a complexity O(n(4)) and is implemented on nets with small number of sinks. Next we propose a FPTAS Gradient algorithm for minimizing the total overflow. This is a concurrent approach considering all the nets simultaneously contrary to the existing approaches of sequential rip-up and reroute. The algorithms are implemented on ISPD98 derived benchmarks and the drastic reduction of overflow is observed. (C) 2014 Elsevier Inc. All rights reserved.

1D Tight-Binding Models Render Quantum First Passage Time ``Speakable''

The calculation of First Passage Time (moreover, even its probability density in time) has so far been generally viewed as an ill-posed problem in the domain of quantum mechanics. The reasons can be summarily seen in the fact that the quantum probabilities in general do not satisfy the Kolmogorov sum rule: the probabilities for entering and non-entering of Feynman paths into a given region of space-time do not in general add up to unity, much owing to the interference of alternative paths. In the present work, it is pointed out that a special case exists (within quantum framework), in which, by design, there exists one and only one available path (i.e., door-way) to mediate the (first) passage -no alternative path to interfere with. Further, it is identified that a popular family of quantum systems - namely the 1d tight binding Hamiltonian systems - falls under this special category. For these model quantum systems, the first passage time distributions are obtained analytically by suitably applying a method originally devised for classical (stochastic) mechanics (by Schroedinger in 1915). This result is interesting especially given the fact that the tight binding models are extensively used in describing everyday phenomena in condense matter physics.

Tight triangulations of closed 3-manifolds

A triangulation of a closed 2-manifold is tight with respect to a field of characteristic two if and only if it is neighbourly; and it is tight with respect to a field of odd characteristic if and only if it is neighbourly and orientable. No such characterization of tightness was previously known for higher dimensional manifolds. In this paper, we prove that a triangulation of a closed 3-manifold is tight with respect to a field of odd characteristic if and only if it is neighbourly, orientable and stacked. In consequence, the Kuhnel-Lutz conjecture is valid in dimension three for fields of odd characteristic. Next let F be a field of characteristic two. It is known that, in this case, any neighbourly and stacked triangulation of a closed 3-manifold is F-tight. For closed, triangulated 3-manifolds with at most 71 vertices or with first Betti number at most 188, we show that the converse is true. But the possibility of the existence of an F-tight, non-stacked triangulation on a larger number of vertices remains open. We prove the following upper bound theorem on such triangulations. If an F-tight triangulation of a closed 3-manifold has n vertices and first Betti number beta(1), then (n - 4) (617n - 3861) <= 15444 beta(1). Equality holds here if and only if all the vertex links of the triangulation are connected sums of boundary complexes of icosahedra. (C) 2015 Elsevier Ltd. All rights reserved.

Synthesis, reactivity and structural characterisation of bicyclic tetraphosphapentazanes

The diphenoxy bicyclic tetraphosphapentazane derivatives (EtN)(5)P-4(OPh)(2) 2 and its monoxide (EtN)(5)P-4(O)(OPh)(2) 3 have been prepared. Both 2 and 3 exist as a mixture of two isomers. One isomer of (EtN)(5)P-4(O)(OPh)(2) 3a has been isolated and its reaction with tetrachloro-1,2-benzoquinone yielded (EtN)(5)P-4(O)(OPh)(2)(O2C6Cl4) 5 in which the junction phosphorus atom becomes five-co-ordinated. Treatment of 2 or 3a with [Mo(CO)(4)(nbd)] (nbd = norbornadiene, bicyclo[2.2.1]hepta-2,5-diene), on the other hand, yielded the chelate complex [Mo(CO)(4){(EtN)(5)P-4(O)(n)(OPh)(2)}] (n = 0 or 1; 6 or 7) in which the peripheral phosphorus atoms are bonded to the metal. The structures of 3a and 5-7 have been confirmed by single-crystal X-ray diffraction studies. The two P3N3 rings in 3a and 5 adopt twist/twist and irregular/twist conformations respectively; the phenoxy substituents occupy the 'pseudo axial' positions. However, an ideal chair conformation is observed for the P3N3 rings in 6 and 7 with the phenoxy substituents taking up the 'pseudo equatorial' positions. The NMR spectroscopic data for the compounds are discussed.

Zero-bias conductance and energy gap measurements in LaNiO3-YBa2Cu3O7-x junctions

Conductance measurements of junctions between a high- superconductor and a metallic oxide have been carried out along the a-b plane to examine the tunnel-junction spectra. For these measurements, in situ films have been grown on c-axis oriented thin films using the pulsed laser deposition technique. Two distinctive energy gaps have been observed along with conductance peaks around zero bias. The analysis of zero-bias conductance and energy gap data suggests the presence of midgap states located at the centre of a finite energy gap. The results obtained are also in accordance with the d-wave nature of high- superconductors.

Analysis Of The Energy Quantization Effects On Single Electron Inverter Performance Through Noise Margin Modeling

Possible integration of Single Electron Transistor (SET) with CMOS technology is making the study of semiconductor SET more important than the metallic SET and consequently, the study of energy quantization effects on semiconductor SET devices and circuits is gaining significance. In this paper, for the first time, the effects of energy quantization on SET inverter performance are examined through analytical modeling and Monte Carlo simulations. It is observed that the primary effect of energy quantization is to change the Coulomb Blockade region and drain current of SET devices and as a result affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. It is shown that SET inverter designed with CT : CG = 1/3 (where CT and CG are tunnel junction and gate capacitances respectively) offers maximum robustness against energy quantization.

An upper bound for Cubicity in terms of Boxicity

An axis-parallel b-dimensional box is a Cartesian product R-1 x R-2 x ... x R-b where each R-i (for 1 <= i <= b) is a closed interval of the form [a(i), b(i)] on the real line. The boxicity of any graph G, box(G) is the minimum positive integer b such that G can be represented as the intersection graph of axis-parallel b-dimensional boxes. A b-dimensional cube is a Cartesian product R-1 x R-2 x ... x R-b, where each R-i (for 1 <= i <= b) is a closed interval of the form [a(i), a(i) + 1] on the real line. When the boxes are restricted to be axis-parallel cubes in b-dimension, the minimum dimension b required to represent the graph is called the cubicity of the graph (denoted by cub(G)). In this paper we prove that cub(G) <= inverted right perpendicularlog(2) ninverted left perpendicular box(G), where n is the number of vertices in the graph. We also show that this upper bound is tight.Some immediate consequences of the above result are listed below: 1. Planar graphs have cubicity at most 3inverted right perpendicularlog(2) ninvereted left perpendicular.2. Outer planar graphs have cubicity at most 2inverted right perpendicularlog(2) ninverted left perpendicular.3. Any graph of treewidth tw has cubicity at most (tw + 2) inverted right perpendicularlog(2) ninverted left perpendicular. Thus, chordal graphs have cubicity at most (omega + 1) inverted right erpendicularlog(2) ninverted left perpendicular and circular arc graphs have cubicity at most (2 omega + 1)inverted right perpendicularlog(2) ninverted left perpendicular, where omega is the clique number.

Cubicity, boxicity, and vertex cover

A k-dimensional box is the cartesian product R-1 x R-2 x ... x R-k where each R-i is a closed interval on the real line. The boxicity of a graph G,denoted as box(G), is the minimum integer k such that G is the intersection graph of a collection of k-dimensional boxes. A unit cube in k-dimensional space or a k-cube is defined as the cartesian product R-1 x R-2 x ... x R-k where each Ri is a closed interval on the real line of the form [a(i), a(i) + 1]. The cubicity of G, denoted as cub(G), is the minimum k such that G is the intersection graph of a collection of k-cubes. In this paper we show that cub(G) <= t + inverted right perpendicularlog(n - t)inverted left perpendicular - 1 and box(G) <= left perpendiculart/2right perpendicular + 1, where t is the cardinality of a minimum vertex cover of G and n is the number of vertices of G. We also show the tightness of these upper bounds. F.S. Roberts in his pioneering paper on boxicity and cubicity had shown that for a graph G, box(G) <= left perpendicularn/2right perpendicular and cub(G) <= inverted right perpendicular2n/3inverted left perpendicular, where n is the number of vertices of G, and these bounds are tight. We show that if G is a bipartite graph then box(G) <= inverted right perpendicularn/4inverted left perpendicular and this bound is tight. We also show that if G is a bipartite graph then cub(G) <= n/2 + inverted right perpendicularlog n inverted left perpendicular - 1. We point out that there exist graphs of very high boxicity but with very low chromatic number. For example there exist bipartite (i.e., 2 colorable) graphs with boxicity equal to n/4. Interestingly, if boxicity is very close to n/2, then chromatic number also has to be very high. In particular, we show that if box(G) = n/2 - s, s >= 0, then chi (G) >= n/2s+2, where chi (G) is the chromatic number of G.

Analysis of avalanche breakdown in bipolar transistors based on majority carrier transportation

This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for different bias conditions of the emitter-base junction. This analysis revolves around the transportation and storage of majority carriers in the base region. Using this analysis one can compute all the voltage-current characteristics of a transistor under avalanche breakdown.