257 resultados para SEMICONDUCTOR-LASER


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Nanostructured Zn1-xMnxS films (0 less-than-or-equals, slant x less-than-or-equals, slant 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2*10-6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young's modulus value ranging 69.7-94.2 GPa.

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A systematic study of Ar ion implantation in cupric oxide films has been reported. Oriented CuO films were deposited by pulsed excimer laser ablation technique on (1 0 0) YSZ substrates. X-ray diffraction (XRD) spectra showed the highly oriented nature of the deposited CuO films. The films were subjected to ion bombardment for studies of damage formation, Implantations were carried out using 100 keV Arf over a dose range between 5 x 10(12) and 5 x 10(15) ions/cm(2). The as-deposited and ion beam processed samples were characterized by XRD technique and resistance versus temperature (R-T) measurements. The activation energies for electrical conduction were found from In [R] versus 1/T curves. Defects play an important role in the conduction mechanism in the implanted samples. The conductivity of the film increases, and the corresponding activation energy decreases with respect to the dose value.

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To correlate the Raman frequencies of the amide I and III bands to beta-turn structures, three peptides shown to contain beta-turn structure by x-ray diffraction and NMR were examined. The compounds examined were tertiary (formula: see text). The amide I band of these compounds is seen at 1,668, 1,665, and 1,677 cm-1, and the amide III band appears at 1,267, 1,265, and 1,286 cm-1, respectively. Thus, it is concluded that the amide I band for type III beta-turn structure appears in the range between 1,665 and 1,677 cm-1 and the amide III band between 1,265 and 1,286 cm-1.

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Upon laser pulse excitation (Aex = 532 nm) into the lowest-lying '(n,a*) band system, pivalothiophenones in benzene solutions give rise to short-lived triplets (Ama: = 325-335 nm, em: = (1 1-15) X lo3 M-' cm-I) with quantitative intersystem crossing efficiencies. The triplet yields decrease slightly (by 10-30%) upon changing A, to 308 nm (Le., upon excitation into S2). Kinetic data are presented for intrinsic triplet lifetimes, self-quenching, and quenching by oxygen, di-tert-butylnitroxy radical, and various reagents capable of interacting with the triplets via energy, electron, or hydrogen-atom transfer and by biradical formation (possibly leading to cycloaddition). The mechanisms of the quenching processes are discussed. Relative to rigid aromatic thiones, namely, xanthione and thiocoumarin, the interaction of pivalothiophenone triplets with most of the quenchers are kinetically inefficient. This is interpreted primarily as a manifestation of the steric crowding at positions a to the thiocarbonyl group.

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Laser surface cladding was carried out on a creep-resistant MRI 153M magnesium alloy with a mixture of Al and Al2O3 powders using a pulsed Nd:YAG laser at scan speeds of 21, 42, 63 and 84 mm/s. The Al2O3 particles partially or completely melted during laser irradiation and re-solidified with irregular shapes in the size range of 5–60 µm along with a few islands as large as 500 µm, within the grain-refined Mg-rich dendritic matrix. More than an order of magnitude improvement in wear resistance after cladding was attributed to the presence of ultra-hard Al2O3 particles, increased solid solubility of Al and other alloying elements, and a very fine dendritic microstructure as a result of rapid solidification in the cladded layer. However, corrosion resistance of the laser cladded alloy was reduced by almost an order of magnitude compared to that of the as-cast alloy mainly due to the presence of cracks and pores in the cladded layer.

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The theory of transient mode locking for an active modulator in an intracavity frequency-doubled laser is presented. The theory is applied to mode-locked and intracavity frequency-doubled Nd:YAG laser and the mode-locked pulse width is plotted as a function of number of round trips inside the cavity. It is found that the pulse compression is faster and the system takes a very short time to approach the steady state in the presence of a second harmonic generating crystal inside the laser cavity. The effect of modulation depth and the second harmonic conversion efficiency on the temporal behavior of the pulse width is discussed. Journal of Applied Physics is copyrighted by The American Institute of Physics.

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Polarization properties of Gaussian laser beams are analyzed in a manner consistent with the Maxwell equations, and expressions are developed for all components of the electric and magnetic field vectors in the beam. It is shown that the transverse nature of the free electromagnetic field demands a nonzero transverse cross-polarization component in addition to the well-known component of the field vectors along the beam axis. The strength of these components in relation to the strength of the principal polarization component is established. It is further shown that the integrated strengths of these components over a transverse plane are invariants of the propagation process. It is suggested that cross- polarization measurement using a null detector can serve as a new method for accurate determination of the center of Gaussian laser beams.

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The effect of deposition of Al +Al2O3 on MRI 153 M Mg alloy processed using a pulsed Nd:YAG laser is presented in this study. A composite coating with metallurgical joint to the substrate was formed. The microstructure and phase constituents were characterized and correlated with the thermal predictions. The laser scan speed had an effect on the average melt depth and the amount of retained and/or reconstituted alumina in the final coating. The coating consisted of alumina particles and highly refined dendrites formed due to the extremely high cooling rates (of the order of 10(8) K/s). The microhardness of the coating was higher and several fold improvement of wear resistance compared to the substrate was observed for the coatings. These microstructural features and physical properties were correlated with the effects predicted by a thermal model.

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Theoretical optimization studies of the performance of a combustion driven premixed two-phase flow gasdynamic laser are presented. The steady inviscid nonreacting quasi-one-dimensional two-phase flow model including appropriate finite rate vibrational kinetic rates has been used in the analysis. The analysis shows that the effect of the particles on the optimum performance of the two-phase laser is very small. The results are presented in graphical form. Applied Physics Letters is copyrighted by The American Institute of Physics.

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The short duration of the Doppler signal and noise content in it necessitate a validation scheme to be incorporated in the electronic processor used for frequency measurement, There are several different validation schemes that can be employed in period timing devices. A detailed study of the influence of these validation schemes on the measured frequency has been reported here. These studies were carried out by using a combination of a fast A/D converter and computer. Doppler bursts obtained from an air flow were digitised and stored on magnetic discs. Suitable computer programs were then used to simulate the performance of period timing devices with different validation schemes and the frequency of the stored bursts were evaluated. It is found that best results are obtained when the validation scheme enables frequency measurement to be made over a large number of cycles within the burst.

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The resistivity of selenium-doped n-InP single crystal layers grown by liquid-phase epitaxy with electron concentrations varying from 6.7 x 10$^18$ to 1.8 x 10$^20$ cm$^{-3}$ has been measured as a function of hydrostatic pressure up to 10 GPa. Semiconductor-metal transitions were observed in each case with a change in resistivity by two to three orders of magnitude. The transition pressure p$_c$ decreased monotonically from 7.24 to 5.90 GPa with increasing doping concentration n according to the relation $p_c = p_o [1 - k(n/n_m)^a]$, where n$_m$ is the concentration (per cubic centimetre) of phosphorus donor sites in InP atoms, p$_o$ is the transition pressure at low doping concentrations, k is a constant and $\alpha$ is an exponent found experimentally to be 0.637. The decrease in p$_c$ is considered to be due to increasing internal stress developed at high concentrations of ionized donors. The high-pressure metallic phase had a resistivity (2.02-6.47) x 10$^{-7}$ $\Omega$ cm, with a positive temperature coefficient dependent on doping.

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A study of the effect of N2 reservoir temperature on the small-signal gain in a downstream-mixing 16 μm CO2-N2 GDL is presented. It is shown that the small-signal gain decreases with the increase of N2 reservoir temperature. The conditions for reversing this trend are discussed and the results are presented in the form of graphs.

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The surface tension gradient driven flow that occurs during laser melting has been studied. The vorticity-streamfunction form of the Navier-Stokes equations and the energy equation has been solved by the ‘Alternative Direction Implicit’ method. It has been shown that the inertia forces in the melt strongly influence the flow pattern in the melt. The convection in the melt modifies the isotherms in the melt at high surface tension Reynolds number and high Prandtl number. The buoyancy driven flow has been shown to be negligible compared to the surface tension gradient driven flow in laser melting.

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Five cyclobutanethiones with different chromophores at the 3-position were examined for triplet state behaviour in benzene using laser excitation into their low lying nπ*1 band systems. A weak transient absorption attributable to the triplet state is observed in all these cases. Results concerning triplet lifetimes, intersystem crossing yields (S1 → T1), self-quenching kinetics and kinetics of energy transfer to all-trans-1,6-diphenyl-1,3,5-hexatriene and oxygen and quenching by di-t-butyl nitroxide (DTBN) are presented. Intersystem crossing yields estimated with reference to p,p′-dimethoxythiobenzophenone are roughly unity in all five cases. Self-quenching rates are found to be less than diffusion limited and this is attributed to steric crowding at the α positions (dimethyl group). The rates of oxygen and DTBN quenching compare well with those reported for several other thiones in the literature. No transients other than the triplet were detected in the above cyclobutane-thiones.