Resistivity noise in crystalline magnetic nanowires and its implications to domain formation and kinetics

We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel-Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic devices.

Crystal structure and semiconductor-metal transition of the quasi-two-dimensional transition metal oxide, La2NiO4

Abstract is not available.

Microwave modulation by amorphous-semiconductor switches

Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.

Field-Effect and Frequency Dependent Transport in Semiconductor-Enriched Single-Wall Carbon Nanotube Network Device

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that uses facile fabrication techniques along with a small-ion as the gate electrolyte-and this is accomplished as a result of the semiconductor enhancement of the tubes. The optical transparency and electrical resistance of the device are modulated with gate voltage. A time-response study of the modulation of optical transparency and electrical resistance upon application of gate voltage suggests the percolative charge transport in the network. Also the ac response in the network is investigated as a function of frequency and temperature down to 5 K. An empirical relation between onset frequency and temperature is determined.

Comment on "Pseudoelasticity of Cu-Zr nanowires via stress-induced martensitic phase transformations"

Recently, a novel stress-induced phase transformation in an initial < 100 >/{100} B2-CuZr nanowire has been reported for the first time [Sutrakar and Mahapatra, Mater. Lett. 63, 1289 (2009)]. Following this, a martenisitic phase transformation in Cu-Zr nanowire was shown [Cheng et al., Appl. Phys. Lett. 95, 021911 (2009)] using the same idea (Sutrakar and Mahapatra, Mater. Lett. 63, 1289 (2009)]. The pseudoelastic recovery of the bct phase of Cu-Zr by unloading has also been shown [Cheng et al., Appl. Phys. Lett. 95, 021911 (2009)]. They also tested the epitaxial bain path [Alippi et al., Phys. Rev. Lett. 78, 3892 (1997)] and reported that the bct phase in the nanowire is metastable, whereas the bulk counterpart is unstable. This aspect is re-examined in this comment with corrected results.

Exciton Plasmon Coupling in Hybrid Semiconductor - Metal Nanoparticle Monolayers

Hybrid semiconductor-metal nanoparticles monolayer of Cadmium Sclenide and gold nanoparticles has been prepared, using Langmuir – Blodgett technique. The near field photoluminescence spectra from such monolayer films, shows red shift similar to 75 meV with respect to CdSe QDs monolayer film and splitting similar to 57 meV. The composite spectra are much broader similar to 330 meV compared to the corresponding emission spectra of CdSe monolayer similar to 165 meV. The possible explanation for the observed features are provided in terms of exciton - Plasmon interaction.

EPR Evidence for Premonitory Charge-Ordering Fluctuations in Hydrothermally Grown Pr0.57Ca0.41Ba0.02MnO3 Nanowires

Electron paramagnetic resonance (EPR) and magnetic properties of nanowires of Pr0.57Ca0.41Ba0.02MnO3 (PCBMO) are studied and compared with those of the bulk material. PCBMO nanowires with diameter of 80-90 nm and length of similar to 3.5 mu m were synthesized by a low reaction temperature hydrothermal method and the bulk sample was prepared following a solid-state reaction route. The samples were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The bulk PCBMO manganite exhibits charge order at 230 K along with a ferromagnetic transition at 110 K. However, superconducting quantum interference device measurements on the PCBMO nanowires show a complete `melting' of charge ordering and a ferromagnetic transition at 115 K. This result is confirmed by the EPR intensity behavior as well. However, the EPR line width, which is reflective of the spin dynamics, shows a shallow minimum for nanowires at the temperature corresponding to the charge-ordering transition, i.e., 230 K. We interpret this result as an indication of the presence of charge-ordering fluctuations in the nanowires even though the static charge order is absent, thus heralding the occurrence of charge order in the bulk sample.

Observation of Peierls transition in nanowires (diameter similar to 130 nm) of the charge transfer molecule TTF-TCNQ synthesized by electric-field-directed growth

We report the growth of nanowires of the charge transfer complex tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) with diameters as low as 130 nm and show that such nanowires can show Peierls transitions at low temperatures. The wires of sub-micron length were grown between two prefabricated electrodes (with sub-micron gap) by vapor phase growth from a single source by applying an electric field between the electrodes during the growth process. The nanowires so grown show a charge transfer ratio similar to 0.57, which is close to that seen in bulk crystals. Below the transition the transport is strongly nonlinear and can be interpreted as originating from de-pinning of CDW that forms at the Peierls transition.

EIT as a tool to observe dual wavelength operation of a semiconductor laser

We propose a simplified technique for dual wavelength operation of an extended cavity semiconductor laser, and its characterization using electromagnetically induced transparency (EIT). In this laser cavity scheme light beam is made converging before it incidences on the cavity grating. The converging angle of the beam creates two longitudinal oscillating modes of resonating cavity. Frequency separation between the longitudinal modes are measured with the help of beat frequency generation in a photodiode and creating pair of EIT spectra in Rb vapor. The pair of EIT dips that are generated due to dual wavelength of this laser (that is used as control laser) can be used to estimate frequency difference between the generated wavelengths. Width of EIT spectra can be used to estimate line width of individual wavelength components.

Influence of magnetic clusters on electrical and magnetic properties of In1-xMnxSb/GaAs dilute magnetic semiconductor grown by liquid phase epitaxy

In1-xMnxSb films have been grown with different Mn doping concentrations (x = 0.0085, 0.018, 0.029 and 0.04) beyond the equilibrium 14 solubility limit by liquid phase epitaxy. We have studied temperature dependent resistivity, the Hall effect, magnetoresistance and magnetization for all compositions. Saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic clusters in the film which has been verified by scanning electron microscopy studies. The anomalous Hall coefficient is found to be negative. Remnant field present on the surface of the clusters seems to affect the anomalous Hall effect at very low fields (below 350 Gauss). In the zero field resistivity, a variable-range hopping conduction mechanism dominates below 3.5 K for all samples above which activated behavior is predominant. The temperature dependence of the magnetization measurement shows a magnetic ordering below 10 K which is consistent with electrical measurements. (c) 2007 Elsevier Ltd. All rights reserved.

Chemically Programmed Ultrahigh Density Two-Dimensional Semiconductor Superlattice Array

Designing an ultrahigh density linear superlattice array consisting of periodic blocks of different semiconductors in the strong confinement regime via a direct synthetic route remains an unachieved challenge in nanotechnology. We report a general synthesis route for the formulation of a large-area ultrahigh density superlattice array that involves adjoining multiple units of ZnS rods by prolate US particles at the tips. A single one-dimensional wire is 300-500 nm long and consists of periodic quantum wells with a barrier width of 5 nm provided by ZnS and a well width of 1-2 nm provided by CdS, defining a superlattice structure. The synthesis route allows for tailoring of ultranarrow laserlike emissions (fwhm approximate to 125 meV) originating from strong interwell energy dispersion along with control of the width, pitch, and registry of the superlattice assembly. Such an exceptional high-density superlattice array could form the basis of ultrahigh density memories in addition to offering opportunities for technological advancement in conventional heterojunction-based device applications.

Probing the existing magnetic phases in Pr0.5Ca0.5MnO3 (PCMO) nanowires and nanoparticles: magnetization and magneto-transport investigations

We show from conventional magnetization measurements that the charge order (CO) is completely suppressed in 10 nm Pr0.5Ca0.5MnO3 (PCMO 10) nanoparticles. Novel magnetization measurements, designed by a special high field measurement protocol, show that the dominant ground state magnetic phase is ferromagnetic-metallic (FM-M), which is an equilibrium phase, which coexists with the residual charge ordered anti-ferromagnetic phase (CO AFM) (an arrested phase) and exhibits the characteristic features of a `magnetic glassy state' at low temperatures. It is observed that there is a drastic reduction in the field required to induce the AFM to FM transition (similar to 5-6 T) compared to their bulk counterpart(similar to 27 T); this phase transition is of first order in nature, broad, irreversible and the coexisting phases are tunable with the cooling field. Temperature-dependent magneto-transport data indicate the occurrence of a size-induced insulator-metal transition (TM-I) and anomalous resistive hysteresis (R-H) loops, pointing out the presence of a mixture of the FM-M phase and AFM-I phase.

Magneto-transport and optical properties of diluted magnetic semiconductor Ga1-xMnxSb

We have studied magneto-transport and optical properties of Ga1-xMnxSb crystals (x = 0.01, 0.02, 0.03 and 0.04) grown by horizontal Bridgman method. Negative magnetoresistance and anomalous Hall effect have been observed below 10K. Temperature dependence of magnetization measurement shows a magnetic ordering below 10K which could arise from Ga1-xMnxSb alloy formation. Also, saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters. Reduction in band gap is observed with increasing Mn concentration in the crystals. Temperature dependence of band gap follows Bose-Einstein's model.

Stabilizing High-Energy Crystal Structure in Silver Nanowires with Underpotential Electrochemistry

We demonstrate that commonly face-centered cubic (fcc) metallic nanowires can be stabilized in hexagonal structures even when their surface energy contribution is relatively small. With a modified electrochemical growth process, we have grown purely single-crystalline 4H silver nanowires (AgNWs) of diameters as large as 100 nm within nanoporous anodic alumina and polycarbonate templates. The growth process is not limited by the/Ag Nernst equilibrium potential, and time-resolved imaging with high-resolution transmission electron microscopy (TEM) indicates a kinematically new mechanism of nanowire growth. Most importantly, our experiments aim to separate the effects of confinement and growth conditions on the crystal structure of nanoscale systems.

Superplasticity in intermetallic NiAl nanowires via atomistic simulations

A novel superplastic deformation in an intermetallic B2-NiAl nanowire of cross-sectional dimensions of similar to 20 angstrom with failure strain as high as similar to 700% at 700 K temperature is reported. The minimum temperature under which the superplasticity has been observed is around 0.36 T-m, which is much lower than 0.5 T-m (T-m = melting temperature i.e. 1911 K for bulk B2-NiAl). Superplasticity is observed due to transformation from crystalline phase to amorphous phase after yielding of the nanowire. (C) 2010 Elsevier B.V. All rights reserved.