Thermodynamics of oxygen in liquid copper-tin alloys

The activity coefficients of oxygen in copper-tin alloys at 1 1 00°C have been measured by two different equilibrium methodsthe cell Pt, Ni + NiO I ZrOz solid electrolyte I O[Cu + Sn], cermet. Pt and the equilibrium between Cu + Sn alloys and SnO + SiO, slags established via SnO vapour. The results from both types of measurement confirm the work of Block and co-workers and show that other data are in error. The deoxidation equilibria for Sn in liquid copper, with solid SnO, as deoxidation product, have been evaluated at temperatures of interest in copper smelting.

Thermodynamic study of oxygen in liquid lead tin alloys

The activity coefficients of oxygen in liquid lead-tin alloys have been measured between 550 and 1100°C by use of solid oxide galvanic cells Pt, Ni-NiO I Zr02 Solid electrolyte I 0 (Pb + Sn), Cermet, Pt Pt, Fe-FeO I Zr02 Solid electrolyte I O(Pb + Sn), Cermet, Pt Alcock and Richardson's quasi-chemical equation, with the coordination number of atoms set to 2, is found to predict successfully the activity coefficients of oxygen in these alloys.The relative partial molar enthalpy and entropy of oxygen ?t 1 atom per cent in the alloys have been calculated from ttva variation of the activity coefficient with temperature. The addition of tin to an unsaturated solution of oxygen in lead is shown to decrease significantly both the partial molar enthalpy and entropy of oxygen. As the measurements were restricted to a narrow range between 750-1100'C in lead-rich alloys, however, the pronounced variation of the partial molar enthalpy of oxygen with temperature at constant alloy composition predicted by the quasi-chemical model could not be verified.

Activities of oxygen and lead in Pb-Ag O solutions

The reversible e.m.f. of galvanic cells: stainlesssteel,Ir,Pb+PbO|CaO+ZrO2|Ag+Pb+PbO,Ir,stainlesssteel,I and Pt,Ni+NiO|CaO+ZrO2|O(Pb+Ag),Cermet,Pt,II incorporating solid oxide electrolytes were measured as a function of alloy composition. In lead-rich alloys, the temperature dependence of the e.m.f. of cell I was also investigated. Since the solubility of oxygen in the alloy is small, the relative partial molar properties of lead in the binary Ag + Pb system can be calculated from the e.m.f. of this cell. The Gibbs free energies obtained in this study are combined with selected calorimetric data to provide a complete thermodynamic discription of liquid Ag + Pb Alloys. The activity coefficient of oxygen in the whole range of Ag + Pb alloys at 1273 K have been obtained from the e.m.f. of cell II; and these are found to deviate positively from Alcock and Richardson's quasichemical equation when the average co-ordination number of all the atoms is assigned a value of 2.

Quasichemical equations for oxygen and sulphur in liquid binary alloys

An equation has been derived for predicting the activity coefficient of oxygen or sulphur in dilute solution in binary alloys, based on the quasichemical approach, where the metal atoms and the oxygen atoms are assigned different bond numbers. This equation is an advance on Alcock and Richardson's earlier treatment where all the three types of atoms were assigned the same coordination number. However, the activity coefficients predicted by this new equation appear to be very similar to those obtained through Alcock and Richardson's equation for a number of alloy systems, when the coordination number of oxygen in the new model is the same as the average coordination number used in the earlier equation. A second equation based on the formation of “molecular species” of the type XnO and YnO in solution is also derived, where X and Y atoms attached to oxygen are assumed not to make any other bonds. This equation does not fit experimental data in all the systems considered for a fixed value of n. Howover, if the strong oxygen-metal bonds are assumed to distort the electronic configuation around the metal atoms bonded to oxygen and thus reduce the strength of the bonds formed by these atoms with neighbouring metal atoms by approximately a factor of two, the resulting equation is found to predict the activity coefficients of oxygen that are in good agreement with experimental data in a number of binary alloys.

Interaction between oxygen and silver dissolved in liquid copper

The effect of silver on the activity of oxygen in solution in liquid copper has been measured at 1373 K. The results are compared with those of other authors who have studied the system; it is found that the results are in good agreement with Alcock and Richardson's quasichemical model when a coordination number of 2 is assigned to all atoms in the ternary solution.

Activities of indium in solid solutions of Cu+In, Au+In and Cu+Au+In alloys

Thin foils of Cu, Au and Cu + Au alloys embedded in indium sesquioxide were equilibrated with controlled streams of CO-CO2 mixtures. The equilibrium concentrations of indium in the foils were determined by neutron activation analysis. The corresponding chemical potentials of indium were calculated from the standard free energies of formation of carbon monoxide, carbon dioxide, and indium oxide. It was found that the size difference between the solute and the solvent does not make significant contributions to the solute—solute interaction energy in the α-phase. The chemical potential of indium at one at.% concentration is 8.6 Kcals more negative in gold than in copper at 900°K. The variation of this chemical potential with alloy composition in Cu + Au system was in good agreement with Alcock and Richardson's quasichemical equation. The agreement is strengthened by the accurate knowledge of the co-ordination number in these substitutional solid solutions from X-ray diffraction studies.

Revision of thermodynamic data on MnO Al2O3 melts

The high temperature region of the MnO-A1203 phase diagram has been redetermined to resolve some discrepancies reported in the literature regarding the melting behaviour of MnA1,04. This spinel was found to melt congruently at 2108 (+ 15) K. Theactivity of MnOin MnO-Al,03 meltsand in the two phase regions, melt + MnAI,04 and MnAI2O4 + A1203, has been determined by measuring the manganese concentration in platinum foils in equilibrium under controlled oxygen potentials. The activity of MnO obtained in this study for M ~ O - A I ,m~el~ts is in fair agreement with the results of Sharma and Richardson.However. the alumina-rich melt is found to be in equilibrium with MnAl,04 rather than AI2O3. as suggested by ~ha rmaan d Richardson. The value for the acthity of MnO in the M~AI ,O,+ A1,03 two phaseregion permits a rigorous application of the Gibbs-Duhem equation for calculating the activity of A1203 and the integral Gibbs' energy of mixing of MnO-A1203 melts, which are significantly different from those reported in the literature.

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

The electrical transport behavior of n-n indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(B)) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination of A**. The Richardson constant is extracted similar to 110 A cm(-2) K(-2) using the BHI model and that is in very good agreement with the theoretical value of 112 A cm(-2) K(-2). The second model uses Gaussian statistics and by this, mean barrier height Phi(0) and A** were found to be 0.69 eV and 113 A cm(-2) K(-2), respectively.

Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer

ZnO/Si heterojunctions were fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without buffer layers. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent current-voltage measurements and RT capacitance-voltage (C-V) analysis. The charge carrier concentration and the barrier height (BH) were calculated, to be 5.6x10(19) cm(-3) and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated using the thermionic emission (TE) model, were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10(-7)A/cm(2) K-2 than the theoretical value (32 A/cm(2) K-2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of sigma(2)=0.035 V. By implementing the GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm(2) K-2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. (C) 2012 Elsevier B.V. All rights reserved.

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

In this report, the currentvoltage (IV) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300510?K. The estimated values of the Schottky-barrier height (SBH) and the ideality factor of the diodes based on the thermionic emission (TE) mechanism were found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives the SBH of 0.51?eV and Richardson constant value of 3.23?X?10-5?A?cm-2?K-2 which is much lower than the known value of 26.4?A?cm-2?K-2 for GaN. Such discrepancies of the SBH and Richardson constant value were attributed to the existence of barrier-height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)q2 sigma 2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provided the SBH of 1.47?eV and Richardson constant value of 38.8?A?cm-2?K-2. The temperature dependence of the barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier-height inhomogeneities at the Au/GaN interface.

Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

The temperature dependent electrical transport behavior of n-n InGaN/Si heterostructures grown by plasma-assisted MBE was studied. Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using standard Vegard's law. Current density-voltage plots (J-V-T) revealed that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(b)) are temperature dependent and the incorrect values of the Richardson's constant (A**) produced, suggests an inhomogeneous barrier at the heterostructure interface. The higher value of the ideality factor compared to the ideal value and its temperature dependence suggest that the current transport is mainly dominated by thermionic field emission. (C) 2012 Elsevier B.V. All rights reserved.

Temperature dependent electrical behaviour of Cu2SnS3 films

The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus root V plot shows two regions. The region at lower bias is due to electrode limited Schottky emission and the higher bias region is due to bulk limited Poole Frenkel emission. The ideality factor is calculated from the ln I versus V plot for different temperatures fitted with the thermionic emission model and is found to vary from 6.05 eV to 12.23 eV. This large value is attributed to the presence of defects or amorphous layer at the Ag / Cu2SnS3 interface. From the Richardson's plot the Richardson's constant and the barrier height were calculated. Owing to the inhomogeneity in the barrier heights, the Richardson's constant and the barrier height were also calculated from the modified Richardson's plot. The I-V-T curves were also fitted using the thermionic field emission model. The barrier heights were found to be higher than those calculated using thermionic emission model. From the fit of the I-V-T curves to the field emission model, field emission was seen to dominate in the low temperature range of 140 K to 177 K. The temperature dependent current graphs show two regions of different mechanisms. The log I versus 1000/T plot gives activation energies E-a1 = 0.367095 - 0.257682 eV and E-a2 = 0.038416 - 0.042452 eV. The log ( I/T-2) versus 1000/T graph gives trap depths Phi(o1) = 0.314159 - 0.204752 eV and Phi(o2) = 0.007425- 0.011163 eV. With increasing voltage the activation energy E-a1 and the trap depth Phi(o1) decrease. From the ln (IT1/ 2) versus 1/T-1/ 4 graph, the low temperature region is due to variable range hopping mechanism and the high temperature region is due to thermionic emission. (C) 2014 Author(s).

Effect of angle of incidence on mixed convective wake dynamics and heat transfer past a square cylinder in cross flow at Re=100

In this paper, a numerical investigation is performed to study the mixed convective flow and heat transfer characteristics past a square cylinder in cross flow at incidence. Utilizing air (Pr = 0.71) as an operating fluid, computations are carried out at a representative Reynolds number (Re) of 100. Angles of incidences are varied as, 0 degrees <= alpha <= 45 degrees. Effect of superimposed positive and negative cross-flow buoyancy is brought about by varying the Richardson number (RI) in the range -1.0 <= Ri <= 1.0. The detail features of flow topology and heat transport are analyzed critically for different angles of incidences. The thermo fluidic forces acting on the cylinder during mixed convection are captured in terms of the drag (C-D), lift (C-L), and moment (C-M) coefficients. The results show that the lateral width of the cylinder wake reduces with increasing alpha and the isotherms spread out far wide. In the range 0 degrees < alpha < 45 degrees, C-D reduces with increasing Ri. The functional dependence of C-M with Ri reveals a linear relationship. Thermal boundary layer thickness reduces with increasing angle of incidences. The global rate of heat transfer from the cylinder increases with increasing alpha. (C) 2014 Elsevier Ltd. All rights reserved.

Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current-voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights. (C) 2014 AIP Publishing LLC.