Is there an athermal region of plastic flow in metals at intermediate temperatures?

The question of the existence or otherwise of an athermal temperature region of plastic flow in metals is examined. It is suggested that the athermal region is absent in metals with large dislocation densities. Such an explanation is provoked by a fairly recent proposition that the unzipping of attractive junctions is a plausible rate-controlling mechanism at high temperatures.

A low temperature Weissenberg camera

Details of the design and operation of a Weissenberg camera suitable for x-ray investigations between -180°c and 200°c are presented. The camera employs a novel arrangement of spur and bevel gears to couple the goniometer spindle to the worm rod which controls the range of oscillation. The entire drive system and the goniometer assembly are mounted on a support which permits the insertion or removal of a cylindrical cassette from the gear-box side without disturbing the cooling assembly and the layer-line screen. The cassette can also be inserted from the opposite side. The specimen can be cooled either directly by a stream of liquid air or by the cold gas from its evaporation. Condensation of moisture at low temperatures is prevented by heating the layer-line tubes internally.

Polarization switching in near-stoichiometric Zn:LiNbO3 at high temperatures

The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature (TO. Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures,and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching. (C) 2010 Elsevier Ltd. All rights reserved.

A lock-type cell for NMR studies at high hydrostatic pressures and low temperatures

Details of a simple and convenient high-pressure cell for continuous-wave, wide-line nuclear magnetic resonance investigation at high pressures and low temperatures are described. Experimental results obtained with the cell at 14*108 Pa and 77K for ammonium iodide are presented briefly.

Effect of Storage Temperatures on the Mechanical Properties of the Composite Solid Propellants

Accelerated ageing studies for three composite propellant formulations, namely polystyrene (PS)/ ammonium perchlorate (AP), polymethylmethacrylate (PMMA)/AP and poly phenol formaldehyde (PPF)/AP have been carried out in the temperature range of 55-125°C. Measurements of the ultimate compression strength (Uc) and isothermal decomposition rate (TD rate) were monitored as a function of storage time and temperature. The change in Uc was found to be linearly dependent on the change in TD rate irrespective of the propellant systems. Analysis of the results further revealed that the cause of ageing for both Uc and burning rate (r) is the thermal decomposition of the propellant. The safe-life for the change in mechanical properties was found to be higher compared to the change in r for PS and PMMA based propellants.

Behaviour of power MOSFETs at cryogenic temperatures

In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2 – 300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to ≈ 30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freeze-out in the n− region on the substrate, which forms a drain.

Numerical estimation of hotspot temperatures in electrodes subjected to pulsed electron beam heating in vacuum

A numerical solution for the transient temperature distribution in a cylindrical disc heated on its top surface by a circular source is presented. A finite difference form of the governing equations is solved by the Alternating Direction Implicit (ADI) time marching scheme. This solution has direct applications in analyzing transient electron beam heating of target materials as encountered in the prebreakdown current enhancement and consequent breakdown in high voltage vacuum gaps stressed by alternating and pulsed voltages. The solution provides an estimate of the temperature for pulsed electron beam heating and the size of thermally activated microparticles originating from anode hot spots. The calculated results for a typical 45kV (a.c.) electron beam of radius 2.5 micron indicate that the temperature of such spots can reach melting point and could give rise to microparticles which could initiate breakdown.

Perturbation of critical solution temperatures by impurity doping

An expression is developed for the variation of the critical solution temperature of a binary liquid system when a third component (dopant) is added, using an extension of the regular solution theory. The model can be used for UCST, LCST and for closed loop systems and has the correct features in the limiting cases.

Effect of Substrate and Annealing Temperatures on Mechanical Properties of Ti-rich NiTi Films

The effect of substrate and annealing temperatures on mechanical properties of Ti-rich NiTi films deposited on Si (100) substrates by DC magnetron sputtering was studied by nanoindentation. NiTi films were deposited at two substrate temperatures viz. 300 and 400 degrees C. NiTi films deposited at 300 degrees C were annealed for 4 h at four different temperatures, i.e. 300, 400, 500 and 600 degrees C whereas films deposited at 400 degrees C were annealed for 4 h at three different temperatures, i.e. 400, 500 and 600 degrees C. The elastic modulus and hardness of the films were found to be the same in the as-deposited as well as annealed conditions for both substrate temperatures. For a given substrate temperature, the hardness and elastic modulus were found to remain unchanged as long as the films were amorphous. However, both elastic modulus and hardness showed an increase with increasing annealing temperature as the films become crystalline. The results were explained on the basis of the change in microstructure of the film with change in annealing temperature.

Electrical-Resistivity Studies on GE-SE Glasses at High-Pressures and Low-Temperatures

High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equal-to x less-than-or-equal-to 40) glasses at ambient and low temperatures using the Bridgman anvil system. All the melt quenched glasses show a discontinuous glassy semiconductor to crystalline metal transition at high pressures. The high pressure phases of Ge-Se samples do not correspond to any of the equilibrium phases of the system. Additionally, the variation of transition pressure (P(T)), ambient resistivity (rho0) and the activation energy (DELTAE(t)) with composition, exhibit a change in behaviour at x = 20 and 33. The unusual variations observed in these glasses are discussed in the light of chemical and percolation thresholds occurring in the glassy system.