Role of Management Decision Variables in Determining Technology Progress and Technical Efficiency in Indian Electronic Industry

This paper analyses the influence of management on Technical Efficiency Change (TEC) and Technological Progress (TP) in the communication equipment and consumer electronics sub-sectors of Indian hardware electronics industry. Each sub-sector comprises 13 sample firms for two time periods.The primary objective is to determine the relative contribution of TP and TEC to TFP Growth (TFPG) and to establish the influence of firm specific operational management decision variables on these two components. The study finds that both the sub-sectors have strived and achieved steady TP but not TEC in the period of economic liberalisation to cope with the intensifying competition. The management decisions with respect to asset and profit utilization, vertical integration, among others, improved TP and TE in the sub-sectors. However, R&D investments and technology imports proved costly for TFP indicating inadequate efforts and/or poor resource utilisation by the management. Management was found to be complacent in terms of improving or developing their own technology as indicated by their higher dependence on import of raw materials and no influence of R&D on TP.

Quality Assurance and Assessment in Technical Education System: A Web Based Approach

Engineering education quality embraces the activities through which a technical institution satisfies itself that the quality of education it provides and standards it has set are appropriate and are being maintained. There is a need to develop a standardised approach to most aspects of quality assurance for engineering programmes which is sufficiently well defined to be accepted for all assessments.We have designed a Technical Educational Quality Assurance and Assessment (TEQ-AA) System, which makes use of the information on the web and analyzes the standards of the institution. With the standards as anchors for definition, the institution is clearer about its present in order to plan better for its future and enhancing the level of educational quality.The system has been tested and implemented on the technical educational Institutions in the Karnataka State which usually host their web pages for commercially advertising their technical education programs and their Institution objectives, policies, etc., for commercialization and for better reach-out to the students and faculty. This helps in assisting the students in selecting an institution for study and to assist in employment.

Electrochemical capacitors: Technical challenges and prognosis for future markets

Electrochemical capacitors are potential devices that could help bringing about major advances in future energy storage. They are lightweight and their manufacture and disposal has no detrimental effects on the environment. A comprehensive description of fundamental science of electrochemical capacitors is presented. Similarities and differences between electrochemical capacitors and secondary batteries for electrical energy storage are highlighted and various types of electrochemical capacitors are discussed with special reference to lead-carbon hybrid ultracapacitors. Some envisaged applications of electrochemical capacitors are described along with the technical challenges and prognosis for future markets. (C) 2012 Published by Elsevier Ltd.

Design and construction of geocell foundation to support the embankment on settled red mud

This paper presents the case history of the construction of a 3 m high embankment on the geocell foundation over the soft settled red mud. Red mud is a waste product from the Bayer process of Aluminum industry. Geotechnical problems of the site, the design of the geocell foundation based on experimental investigation and the construction sequences of the geocell foundations in the field are discussed in the paper. Based on the experimental studies, an analytical model was also developed to estimate the load carrying capacity of the soft clay bed reinforced with geocell and combination of geocell and geogrid. The results of the experimental and analytical studies revealed that the use of combination of geocell and the geogrid is always beneficial than using the geocell alone. Hence, the combination of geocell and geogrid was recommended to stabilize the embankment base. The reported embankment is located in Lanjigharh (Orissa) in India. Construction of the embankment on the geocell foundation has already been completed. The constructed embankmenthas already sustained two monsoon rains without any cracks and seepage. (C) 2013 Elsevier Ltd. All rights reserved.

Bearing capacity of a circular foundation on layered sand-clay media

The bearing capacity of a circular footing lying over fully cohesive strata, with an overlaying sand layer, is computed using the axisymmetric lower bound limit analysis with finite elements and linear optimization. The effects of the thickness and the internal friction angle of the sand are examined for different combinations of c(u)/(gamma b) and q, where c(u)=the undrained shear strength of the cohesive strata, gamma=the unit weight of either layer, b=the footing radius, and q=the surcharge pressure. The results are given in the form of a ratio (eta) of the bearing capacity with an overlaying sand layer to that for a footing lying directly over clayey strata. An overlaying medium dense to dense sand layer considerably improves the bearing capacity. The improvement continuously increases with decreases in c(u)/(gamma b) and increases in phi and q/(gamma b). A certain optimum thickness of the sand layer exists beyond which no further improvement occurs. This optimum thickness increases with an increase in 0 and q and with a decrease in c(u)/(gamma b). Failure patterns are also drawn to examine the inclusion of the sand layer. (C) 2015 The Japanese Geotechnical Society. Production and hosting by Elsevier B.V. All rights reserved.

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.