Wide Ranged La Modification in CCTO Ceramics Through Sol-Gel: Effect on Microstructure and Dielectric Properties

Sol-Gel method was employed to synthesize pure and wide ranged La-modified CaCu3Ti4O12 ceramics using mixed acetate-nitrate-alcoxide individual metal-ion precursors. SEM pictures revealed that grain size monotonously decreases with the extent of La incorporation. All the prepared ceramics manifested dielectric constant in the range similar to 10(3)-10(4). Dielectric loss was found to decrease with La incorporation and got optimized for 20% La3+ while retaining its high dielectric constant which may be industrially important. Room temperature Impedance spectroscopy suggested that decrease in grain resistance is responsible for reduction in dielectric loss according to Internal Barrier Layer Capacitor (IBLC) model.

Synthesis of Novel Oxide Pyrochlores, A2BB?O7 (A = La, Nd; BB? = Pb, Sn, Bi), by Alkali Melt Route

Oxide pyrochlores of the formula A2BB? O7 (A = La, Nd; BB? = Pb, Sn, Bi) have been synthesized by a low-temperature ambient-pressure route employing KOH melts. All the compositions, including La2Bi2O7 and its strontium-substituted derivatives, La2-xSrxBi2O7-?, are deeply colored insulators, confirming that a metallic ground state is not achieved for Pb(IV) and Bi(IV/V) oxides with the pyrochlore structure.

Giant magnetoresistance in lanthanum strontium yttrium manganese oxides (La(1-x)Sr(x-z)YuMnO(3))

Electron transport and magnetic properties of several compositions of the La1-xSx-zYzMnO3 system have been investigated in order to explore the effect of yttrium substitution on the magnetoresistance and related properties of these manganates. Yttrium substitution lowers the T-c and the insulator-metal transition temperature, while increasing the peak resistivity. A comparison of the properties of La1-xSrx-zYzMnO3 with the corresponding La1-xCax-zYzMnO3 compositions shows that the observed properties can be related to the average size of the A-site cations.

Photocytotoxicity and DNA photocleavage activity of La(III) and Gd(III) complexes of phenanthroline bases

Lanthanide(II) complexes La(B)(acac)(3)] (1-3) and Gd(B)(acac)(3)] (4-6), where B is a N,N-donor phenanthroline base, viz., 1,10-phenanthroline (phen in 1, 4), dipyrido3,2-d:2',3'-f]quinoxaline (dpq in 2, 5) and dipyrido3,2-a:2',3'-c]phenazine (dppz in 3, 6), have been prepared and characterized. The Gd(111) complexes 4 6 are structurally characterized by single crystal X-ray crystallography. The complexes display GdO6N2 coordination with the ligands showing bidentate chelating mode of bonding. The complexes are non-electrolytic in aqueous DMF and exhibit ligand-centered absorption bands in the UV region. The dppz complexes show a band at 380 nm in DMF. The La(111) complexes are diamagnetic. The Gd(III) complexes are paramagnetic with magnetic moment that corresponds to seven unpaired electrons. The Complexes are avid binders to calf thymus DNA giving K-b values in the range of 4.7 x 10(4) 6.1 x 10(5) M-1 with a relative binding order: 3, 6 (dppz) > 2, 5 (dpq) > 1, 4 (phen). The binding data suggest DNA surface and/or groove binding nature of the complexes. The dpq and dppz complexes efficiently cleave SC DNA to its nicked circular form in UV-A light of 365 nm via formation of both singlet oxygen (O-1(2)) and hydroxyl radical (HO center dot) species. The dppz complexes 3 and 6 exhibit significant PDT effect in He La cervical cancer cells giving respective IC50 value of 460(+/- 50) and 530(+/- 30) nM in UV-A light of 365 rim, and are essentially non-toxic in dark with an IC50 value of >100 mu M. The dppz ligand alone is cytotoxic in dark and UV-A light. A significant decrease in the dark toxicity of the dppz base is observed on binding to the Ln(III) ion while retaining its photocytotoxicity.

Oriented ferroelectric thin films of PbTiO3, (Pb,La)TiO3, and Pb(Zr,Ti)O3 by nebulized spray pyrolysis

Nebulized spray pyrolysis provides a good low?temperature chemical route for preparing thin films of PbTiO3, (Pb0.9,La0.1)TiO3 and Pb(Zr0.52,Ti0.48)O3. The films are a? or c? axis oriented, with spherical grains of ?30 nm and give satisfactory P?E hysteresis loops. © 1995 American Institute of Physics.

Phase Relations in the System La-Rh-O and Thermodynamic Properties of LaRhO3

Phase relations in the system La-Rh-O at 1223 Ii have been determined by examination of equilibrated samples by optical and scanning electron microscopy, powder X-ray diffraction (XRD), and energy-dispersive analysis of X-rays (EDAX). Only one ternary oxide, LaRhO3, with distorted orthorhombic perovskite structure (Pbnm, a = 0.5525, b = 0.5680, and c = 0.7901 nm) was identified. The alloys and intermetallics along the La-Rh binary are in equilibrium with La2O3. The thermodynamic properties of LaRhO3 were determined in the temperature range 890 to 1310 K, using a solid-state cell incorporating yttria-stabilized zirconia as the electrolyte. A new four-compartment design of the emf cell was used to enhance the accuracy of measurement. For the reaction 1/2La(2)O(3) + 1/2Rh(2)O(3) --> LaRhO3, Delta G degrees = - 70 780 + 4.89T (+/- 90) J.mol(-1) The compound decomposes on heating to a mixture of La2O3, Ph and O-2. The calculated decomposition temperatures are 1843 (+/- 5) K in pure O-2 and 1728 (+/- 5) K in air at a pressure of 1.01 x 10(5) Pa. The phase diagrams for the system La-Rh-O at different partial pressures of oxygen are calculated from the thermodynamic information.

New La2CuO4 derivatives La(2-2x)Sr(2x)Cu(1-x)M(x)O(4) (M=Ti, Mn, Fe, or Ru): A study of linear Cu-O-M electronic interaction in two dimensions

Oxides of the general formula La2-2xSr2xCu1-xII,M(x)(IV)O(4) (M = Ti, Mn, Fe, or Ru), crystallizing in the tetragonal K,NIF, structure, have been synthesized. For M=Ti, only the x=0,5 member could be prepared, while for M=Mn and Fe, the composition range is 0lating, the members of the M=Fe series are metallic, showing a broad metal-semiconductor transition around 100 K for Olated to a Cu(II)-O-Fe(IV) <--> Cu(III)-O-Fe(III) valence degeneracy. Increasing the strontium content at the expense of lanthanum in La2-2xSr2xCu1-xFexO4 for x less than or equal to 0.20 renders the samples metallic but not superconducting. (C) 1997 Academic Press.

ac transport studies of La-modified antiferroelectric lead zirconate thin films

In recent times antiferroelectric thin-film material compositions have been identified as one of the most significant thin films for development of devices such as high charge storage, charge couplers/decouplers, and high strain microelectromechanical systems. Thus, understanding the dielectric and electrical properties under an ac signal drive in these antiferroelectric thin-film compositions, such as lead zirconate thin films, and the effect of donor doping on them is very necessary. For this purpose, thin films of antiferroelectric lead zirconate and La-modified lead zirconate thin films with mole % concentrations of 0, 3, 5, and 9 have been deposited by pulsed excimer laser ablation. The dielectric and hysteresis properties have confirmed that with a gradual increase of the La content, the room-temperature antiferroelectric lead zirconate thin films can be modified into ferroelectric and paraelectric phases. ac electrical studies revealed that the polaronic related hopping conduction is responsible for the charge transport phenomenon in these films. With a La content of less than or equal to3 mole % in pure lead zirconate, the conductivity of the films has been reduced and followed by an increase of its conductivity for a greater than or equal to3% addition of La to lead zirconate thin films. The polaronic activation energies are also found to follow a similar trend as that of the conductivity.

Alternating current conduction and impedance spectroscopy analysis on pulsed excimer laser ablated (Pb, La)TiO3 thin films

Lanthanum doped lead titanate (PLT) thin films were identified as the most potential candidates for the pyroelectric and memory applications. PLT thin films were deposited on Pt coated Si by excimer laser ablation technique. The polarization behavior of PLT thin films has been studied over a temperature range of 300 K to 550 K. A universal power law relation was brought into picture to explain the frequency dependence of ac conductivity. At higher frequency region ac conductivity of PLT thin films become temperature independent. The temperature dependence of ac conductivity and the relaxation time is analyzed in detail. The activation energy obtained from the ac conductivity was attributed to the shallow trap controlled space charge conduction in the bulk of the sample. The impedance analysis for PLT thin films were also performed to get insight of the microscopic parameters, like grain, grain boundary, and film-electrode interface etc. The imaginary component of impedance Z" exhibited different peak maxima at different temperatures. Different types of mechanisms were analyzed in detail to explain the dielectric relaxation behavior in the PLT thin films.

Study of thickness dependence on electrical properties of (Pb,La)TiO3 thin films for memory applications

Lead-lanthanum-titanate (Pb0.72La0.28)TiO3 (PLT) is one of the interesting materials for DRAM applications due to its room temperature paraelectric nature and its higher dielectric permittivity. PLT thin films of different thickness ranging from 0.54- 0.9 mum were deposited on Pt coated Si substrates by excimer laser ablation technique. We have measured the voltage (field) dependence, the thickness dependence, temperature dependence of dc leakage currents and analysis is done on these PLT thin films. Current- voltage characteristics were measured at different temperatures for different thick films and the thickness dependence of leakage current has been explained by considering space charge limited conduction mechanism. The charge transport phenomena were studied in detail for films of different thicknesses for dynamic random access memory applications.

An infrared spectroscopic study of the low-spin to intermediate-spin state (1A1–3T1) transition in rare earth cobaltates, LnCoO3 (Ln=La, Pr and Nd)

Low-spin (LS) to intermediate-spin (IS) state transitions in crystals of LnCoO3 (Ln=La, Pr and Nd) have been investigated by variable temperature infrared spectroscopy. The spectra reveal the occurrence of the transition around 120, 220 and 275 K, respectively, in LaCoO3,PrCoO3 and NdCoO3, at which temperatures the intensities of the stretching and the bending modes associated with the LS state decrease, accompanied by an increase in the intensities of the bands due to IS state. The characteristic frequencies of both the spin states decrease with increase in temperature, showing anomalies around the transition.

An infrared spectroscopic study of the low-spin to intermediate-spin state ((1)A(1)-T-3(1)) transition in rare earth cobaltates, LnCoO(3) (Ln = La, Pr and Nd)

Low-spin (LS) to intermediate-spin (IS) state transitions in crystals of LnCoO(3) (Ln = La, Pr and Nd) have been investigated by variable temperature infrared spectroscopy. The spectra reveal the occurrence of the transition around 120, 220 and 275 K, respectively, in LaCoO3,PrCoo(3) and NdCoO3, at which temperatures the intensities of the stretching and the bending modes associated with the LS state decrease, accompanied by an increase in the intensities of the bands due to IS state. The characteristic frequencies of both the spin states decrease with increase in temperature, showing anomalies around the transition. (C) 2001 Published by Elsevier Science B.V.

Electrical properties of La-graded heterostructure of Pb1?xLaxTiO3 thin films

La-graded heterostructure films were prepared by sol-gel technique on platinum substrates and electrical properties of these films were compared with those of conventional thin films of similar compositions. X-ray diffraction results indicate the pure perovskite polycrystalline structure of these films. Atomic Force Microscopy analysis revealed a finer grain size and relatively lower surface roughness. Relatively higher values of Pm and Pr (69 and 38 ?C cm?2, respectively) and excellent dielectric properties with lower loss (K=1900, tan ?=0.035 at 100 kHz) were observed for La-graded heterostructure films. Also lower leakage current density (not, vert, similar2.5 nA cm?2) and a higher onset field (not, vert, similar50 kV cm?1) of space charge conduction indicated higher breakdown strength and good leakage current characteristics. The ac electric field dependence of the permittivity at sub-switching fields was analyzed in the framework of the Rayleigh dynamics of domain walls. The estimated irreversible domain wall displacement contribution to the total dielectric permittivity was 17 and 9% for conventional 15 at.% La doped PbTiO3 and La-graded heterostructure films, respectively. The improved dielectric and polarization behavior of La-graded heterostructure films may be attributed to homogenous dopant distribution compared to the conventional 15 at.% La doped PbTiO3 films.

On the Magnetic Ground State of La(0.85)Sr(0.15)CoO(3) Single Crystals

We present an extensive study on magnetic and transport properties of La(0.85)Sr(0.15)CoO(3) single crystals grown by a float zone method to address the issue of phase separation versus spin-glass (SG) behavior. The dc magnetization study reveals a kink in field-cooled magnetization, and the peak in the zero-field-cooling curve shifts to lower temperature at modest dc fields, indicating the SG magnetic phase. The ac susceptibility study exhibits a considerable frequency-dependent peak shift (similar to 4 K) and a time-dependent memory effect below the freezing temperature. In addition, the characteristic time scale tau(0) estimated from the frequency-dependent ac susceptibility measurement is found to be similar to 10(-13) s, which matches well with typical values observed in canonical SG systems. The transport relaxation study evidently demonstrates the time-dependent glassy phenomena. In essence, all our experimental results corroborate the existence of SG behavior in La(0.85)Sr(0.15)CoO(3) single crystals.

Novel ABO(3) oxides related to perovskite and YAlO3 structure types in the La-B-V-O (B = Ni, Cu) systems

The synthesis, structure and magnetic properties of mixed-metal oxides of ABO(3) composition in the La-B-V-O (B = Ni, Cu) systems are described in the present paper. While the B = Ni oxides adopt GdFeO3-like perovskite structure containing disordered nickel and vanadium at the octahedral B site, La3Cu2VO9 crystallizes in a YAlO3-type structure. A detailed investigation of the superstructure of nominal La3Cu2VO9 by WDS analysis and Rietveld refinement of powder XRD data reveal that the likely composition of the phase is La13Cu9V4O38.5, where the Cu and V atoms are ordered in a root13a(h) (a(h) = hexagonal a parameter of YAlO3-like subcell) superstructure. Magnetic susceptibility data support the proposed superstructure consisting of triangular Cu-3 clusters. At low temperatures, the magnetic moment corresponds to S = 1/2 per Cu-3 cluster, while at high temperatures the behavior is Curie-Weiss like, showing S = 1/2 per copper. The present work reveals the contrasting behavior of La-Cu-V-O and La-Ni-V-O systems: while a unique line-phase related to YAlO3 structure is formed around La3Cu2VO9 Composition in the copper system, a continuous series of perovskite-GdFeO3 solid solutions, LaNi1-xVxO3 for 0 less than or equal to x less than or equal to 1/3 seems to be obtained in the nickel system, where the oxidation state of nickel varies from 3+ to 2+.