A Rodinian suture in western India: New insights on India-Madagascar correlations

We report detailed evidence for a new paleo-suture zone (the Kumta suture) on the western margin of southern India. The c. 15-km-wide, westward dipping suture zone contains garnet-biotite, fuchsite-haematite, chlorite-quartz, quartz-phengite schists, biotite augen gneiss, marble and amphibolite. The isochemical phase diagram estimations and the high-Si phengite composition of quartz-phengite schist suggest a near-peak condition of c. 18 kbar at c. 550 degrees C, followed by near-isothermal decompression. The detrital SHRIMP U-Pb zircon ages from quartz-phengite schist give four age populations ranging from 3280 to 2993 Ma. Phengite from quartz-phengite schist and biotite from garnet-biotite schist have K-Ar metamorphic ages of ca. 1326 and ca. 1385 Ma respectively. Electron microprobe-CHIME ages of in situ zircons in quartz-phengite schist (ca. 3750 Ma and ca. 1697 Ma) are consistent with the above results. The Bondla ultramafic-gabbro complex in the west of the Kumta suture compositionally represents an arc with K-Ar biotite ages from gabbro in the range 1644-1536 Ma. On the eastern side of the suture are weakly deformed and unmetamorphosed shallow westward-dipping sedimentary rocks of the Sirsi shelf, which has the following upward stratigraphy: pebbly quartzite/sandstone, turbidite, magnetite iron formation, and limestone; farther east the lower lying quartzite has an unconformable contact with ca. 2571 Ma quartzo-feldspathic gneisses of the Dharwar block with a ca. 1733 Ma biotite cooling age. To the west of the suture is a c. 60-km-wide Karwar block mainly consisting of tonalite-trondhjemite-granodiorite (TTG) and amphibolite. The TTGs have U-Pb zircon magmatic ages of ca. 3200 Ma with a rare inherited core age of ca. 3601 Ma. The K-Ar biotite cooling age from the TTGs (1746 Ma and 1796 Ma) and amphibolite (ca. 1697 Ma) represents late-stage uplift. Integration of geological, structural and geochronological data from western India and eastern Madagascar suggest diachronous ocean closure during the amalgamation of Rodinia; in the north at around ca. 1380 Ma, and a progression toward the south until ca. 750 Ma. Satellite imagery based regional structural lineaments suggests that the Betsimisaraka suture continues into western India as the Kumta suture and possibly farther south toward a suture in the Coorg area, representing in total a c. 1000 km long Rodinian suture. (C) 2013 Elsevier B.V. All rights reserved.

Next-generation optical microscopy

A new breed of microscopy techniques is coming to the forefront of optical imaging. They enhance the attainable 3D resolution of imaging in live and ``fixed'' cells' (with minimal structural perturbation) by greater than tenfold, bringing subcellular structures in sharp focus Along with long-term imaging, deep tissue and high throughput capablities, new insights in various fields of biology are being generated. The main set of these next-generation optical microscopy techniques along with select applications is described in this article.

The effect of multisubstitution on the thermoelectric properties of chalcogenide-based Cu2.1Zn0.9Sn1-xInxSe4 (0 <= x <= 0.1)

Quinary chalcogenide compounds Cu2.1Zn0.9Sn1-xInxSe4 (0 <= x <= 0.1) were prepared by melting (1170K) followed by annealing (773 K) for 172 h. Powder X-ray diffraction (XRD) data accompanied by electron probe microanalysis (EPMA) and Raman spectra of all the samples confirmed the formation of a tetragonal kesterite structure with Cu2FeSnS4-type. The thermoelectric properties of all the samples were measured as a function of temperature in the range of 300-780K. The electrical resistivity of all the samples exhibits metallic-like behavior. The positive values of the Seebeck coefficient and the Hall coefficient reveal that holes are the majority charge carriers. The codoping of copper and indium leads to a significant increase of the electrical resistivity and the Seebeck coefficient as a function of temperature above 650 K. The thermal conductivity of all the samples decreases with increasing temperature. Lattice thermal conductivity is not significantly modified as the doping content may infer negligible mass fluctuation scattering for copper/zinc and indium/tin substitution. Even though, the power factors (S-2/rho) of indium-doped samples Cu2.1Zn0.9Sn1-xInxSe4 (x = 0.05, 0.075) are almost the same, the maximum zT = 0.45 at 773K was obtained for Cu2.1Zn0.9Sn0.925In0.075Se4 due to its smaller value of thermal conductivity. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

An electrochemical method for the synthesis of few layer graphene sheets for high temperature applications

We demonstrate an electrochemical technique for the large scale synthesis of high quality few layer graphene sheets (FLGS) directly from graphite using oxalic acid (a weak acid) as the electrolyte. One of the interesting observations is that the FLGS are stable at least up to 800 degrees C and hence have potential application in solid oxide fuel cells as a gas diffusion layer.

Thermoelectric properties of Zn doped Cu2SnSe3

Zn doped ternary compounds Cu2ZnxSn1-xSe3 (x = 0, 0.025, 0.05, 0.075) were prepared by solid state synthesis. The undoped compound showed a monoclinic crystal structure as a major phase, while the doped compounds showed a cubic crystal structure confirmed by powder XRD (X-Ray Diffraction). The surface morphology and elemental composition analysis for all the samples were studied by SEM (Scanning Electron Microscopy) and EPMA (Electron Probe Micro Analyzer), respectively. SEM micrographs of the hot pressed samples showed the presence of continuous and homogeneous grains confirming sufficient densification. Elemental composition of all the samples revealed an off-stoichiometry, which was determined by EPMA. Transport properties were measured between 324 K and 773 K. The electrical resistivity decreased up to the samples with Zn content x = 0.05 in Cu2ZnxSn1-xSe3, and slightly increased in the sample Cu2Zn0.075Sn0.925Se3. This behavior is consistent with the changes in the carrier concentration confirmed by room temperature Hall coefficient data. Temperature dependent electrical resistivity of all samples showed heavily doped semiconductor behavior. All the samples exhibit positive Seebeck coefficient (S) and Hall coefficient indicating that the majority of the carriers are holes. A linear increase in Seebeck coefficient with increase in temperature indicates the degenerate semiconductor behavior. The total thermal conductivity of the doped samples increased with a higher amount of doping, due to the increase in the carrier contribution. The total and lattice thermal conductivity of all samples showed 1/1 dependence, which points toward the dominance of phonon scattering at high temperatures. The maximum 1/TZF = 0.48 at 773 K was obtained for the sample Cu2SnSe3 due to a low thermal conductivity compared to the doped samples. (C) 2014 Elsevier B.V. All rights reserved.