32 resultados para High power fiber laser


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Laser sintering was carried out using a high power continuous-wave CO2 laser to prepare pellets of zirconia (ZrO2), hafnia (HfO2) and yttria (Y2O3) mixed oxides as starting materials in the deposition of optical coatings. Hardened recrystallized pellets appeared to have been formed during laser treatment. X-ray diffraction analysis revealed a monoclinic-to-tetragonal phase transformation in the binary system while the ternary system was found to have a mixture of two crystalline phases. Cross-sectional scanning electron microscopy showed two isothermal crystalline regions in the ternary system. The optical inhomogeneity was low in the films deposited from the laser-fused pellets, but the absorption at a wavelength of 351 nm increased with increasing HfO2 content. The films deposited from laser-fused pellets were analysed by electron spectroscopy for chemical analysis and found to be stoichiometric and homogeneous.

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High voltage power supplies for radar applications are investigated which are subjected to pulsed load with stringent specifications. In the proposed solution, power conversion is done in two stages. A low power-high frequency converter modulates the input voltage of a high power-low frequency converter. This method satisfies all the performance specifications and takes care of the critical aspects of HV transformer.

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This report addresses the assessment of variation in elastic property of soft biological tissues non-invasively using laser speckle contrast measurement. The experimental as well as the numerical (Monte-Carlo simulation) studies are carried out. In this an intense acoustic burst of ultrasound (an acoustic pulse with high power within standard safety limits), instead of continuous wave, is employed to induce large modulation of the tissue materials in the ultrasound insonified region of interest (ROI) and it results to enhance the strength of the ultrasound modulated optical signal in ultrasound modulated optical tomography (UMOT) system. The intensity fluctuation of speckle patterns formed by interference of light scattered (while traversing through tissue medium) is characterized by the motion of scattering sites. The displacement of scattering particles is inversely related to the elastic property of the tissue. We study the feasibility of laser speckle contrast analysis (LSCA) technique to reconstruct a map of the elastic property of a soft tissue-mimicking phantom. We employ source synchronized parallel speckle detection scheme to (experimentally) measure the speckle contrast from the light traversing through ultrasound (US) insonified tissue-mimicking phantom. The measured relative image contrast (the ratio of the difference of the maximum and the minimum values to the maximum value) for intense acoustic burst is 86.44 % in comparison to 67.28 % for continuous wave excitation of ultrasound. We also present 1-D and 2-D image of speckle contrast which is the representative of elastic property distribution.

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The present study discusses the photosensitivity of GeS2 chalcogenide glass in response to irradiation with femtosecond pulses at 1047 nm. Bulk GeS2 glasses are prepared by conventional melt quenching technique and the amorphous nature of the glass is confirmed using X-ray diffraction. Ultrafast laser inscription technique is used to fabricate the straight channel waveguides in the glass. Single scan and multi scan waveguides are inscribed in GeS2 glasses of length 0.65 cm using a master oscillator power amplifier Yb doped fiber laser (IMRA mu jewel D400) with different pulse energy and translation speed. Diameters of the inscribed waveguides are measured and its dependence on the inscription parameters such as translation speed and pulse energy is studied. Butt coupling method is used to characterize the loss measurement of the inscribed optical waveguides. The mode field image of the waveguides is captured using CCD camera and compared with the mode field image of a standard SMF-28 fibers.

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This paper describes the use of high-power thyristors in conjunction with a low-voltage supply for generating pulsed magnetic fields. A modular bank of electrolytic capacitors is charged through a programmable solid-state power supply and then rapidly discharged through a bank of thyristors into a magnetizing coil. The modular construction of capacitor banks enables the discrete control of pulse energy and time. Peak fields up to 15 telsa (150 KOe) and a half period of about 200 microseconds are generated through the discharges. Still higher fields are produced by discharging into a precooled coil ( 77°K). Measurement method for a pulsed field is described.

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Ruthenium dioxide is deposited on stainless steel (SS) substrate by galvanostatic oxidation of Ru3+. At high current densities employed for this purpose, there is oxidation of water to oxygen, which occurs in parallel with Ru3+ oxidation. The oxygen evolution consumes a major portion of the charge. The oxygen evolution generates a high porosity to RuO2 films, which is evident from scanning electron microscopy studies. RuO2 is identified by X-ray photoelectron spectroscopy. Cyclic voltammetry and galvanostatic charge–discharge cycling studies indicate that RuO2/SS electrodes possess good capacitance properties. Specific capacitance of 276 F g−1 is obtained at current densities as high as 20 mA cm−2 (13.33 A g−1). Porous nature of RuO2 facilitates passing of high currents during charge–discharge cycling. RuO2/SS electrodes are thus useful for high power supercapacitor applications.

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Pulse Forming Line (PFL) based high voltage pulsed power systems are well suited for low impedance High Power Microwave (HPM) sources such as a virtual cathode oscillator (VIRCATOR) operating in nanosecond regimes. The system under development consists of a primary voltage source that charges the capacitor bank of a Marx pulser over a long time duration. The Marx pulser output is then conditioned by a PFL to match the requirement of the HPM diode load. This article describes the design and construction of an oil insulated pulse forming line for a REB (Relativistic Electron Beam) diode used in a VIRCATOR for the generation of high power microwaves. Design of a 250 kV/10 kA/60 ns PFL, including the PSPICE simulation for various load conditions are described.

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Multilevel inverters are an attractive solution in the medium-voltage and high-power applications. However in the low-power range also it can be a better solution compared to two-level inverters, if MOSFETs are used as devices switching in the order of 100 kHz. The effect of clamping diodes in the diode-clamped multilevel inverters play an important role in determining its efficiency. Power loss introduced by the reverse recovery of MOSFET body diode prohibits the use of MOSFET in hard-switched inverter legs. A technique of avoiding reverse recovery loss of MOSFET body diode in a three-level neutral point clamped inverter is suggested. The use of multilevel inverters topology enables operation at high switching frequency without sacrificing efficiency. High switching frequency of operation reduces the output filter requirement, which in turn helps in reducing the size of the inverter. This study elaborates the trade-off analysis to quantify the suitability of multilevel inverters in the low-power applications. Advantages of using a MOSFET-based three-level diode-clamped inverter for a PM motor drive and UPS systems are discussed.

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A variety of solutions are available today from industry for high power variable speed AC motor drive applications, starting from a power rating of a few 100 kW to several 10’s of Megawatts. These drives can be classified on the basis of the electrical motor, the power converter and the control technique. The main drive types are reviewed.The salient features of each type of drive are pointed out along with their industrial applications.Following this, some research at IISc which has applications in high power drives is described briefly.

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Power converters burn-in test consumes large amount of energy, which increases the cost of testing, and certification, in medium and high power application. A simple test configuration to test a PWM rectifier induction motor drive, using a Doubly Fed Induction Machine (DFIM) to circulate power back to the grid for burn-in test is presented. The test configuration makes use of only one power electronic converter, which is the converter to be tested. The test method ensures soft synchronization of DFIM and Squirrel Cage Induction Machine (SCIM). A simple volt per hertz control of the drive is sufficient for conducting the test. To synchronize the DFIM with SCIM, the rotor terminal voltage of DFIM is measured and used as an indication of speed mismatch between DFIM and SCIM. The synchronization is done when the DFIM rotor voltage is at its minimum. Analysis of the DFIM characteristics confirms that such a test can be effectively performed with smooth start up and loading of the test setup. After synchronization is obtained, the speed command to SCIM is changed in order to load the setup in motoring or regenerative mode of operation. The experimental results are presented that validates the proposed test method.

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The assembly of aerospace and automotive structures in recent years is increasingly carried out using adhesives. Adhesive joints have advantages of uniform stress distribution and less stress concentration in the bonded region. Nevertheless, they may suffer due to the presence of defects in bond line and at the interface or due to improper curing process. While defects like voids, cracks and delaminations present in the adhesive bond line may be detected using different NDE methods, interfacial defects in the form of kissing bond may go undetected. Attempts using advanced ultrasonic methods like nonlinear ultrasound and guided wave inspection to detect kissing bond have met with limited success stressing the need for alternate methods. This paper concerns the preliminary studies carried out on detectability of dry contact kissing bonds in adhesive joints using the Digital Image Correlation (DIC) technique. In this attempt, adhesive joint samples containing varied area of kissing bond were prepared using the glass fiber reinforced composite (GFRP) as substrates and epoxy resin as the adhesive layer joining them. The samples were also subjected to conventional and high power ultrasonic inspection. Further, these samples were loaded till failure to determine the bond strength during which digital images were recorded and analyzed using the DIC method. This noncontact method could indicate the existence of kissing bonds at less than 50% failure load. Finite element studies carried out showed a similar trend. Results obtained from these preliminary studies are encouraging and further tests need to be done on a larger set of samples to study experimental uncertainties and scatter associated with the method. (C) 2013 Elsevier Ltd. All rights reserved.

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This paper presents the design of a start up power circuit for a control power supply (CPS) which feeds power to the sub-systems of High Power Converters (HPC). The sub-systems such as gate drive card, annunciation card, protection and delay card etc; needs to be provided power for the operation of a HPC. The control power supply (CPS) is designed to operate over a wide range of input voltage from 90Vac to 270Vac. The CPS output supplies power at a desired voltage of Vout =24V to the auxiliary sub-systems of the HPC. During the starting, the power supply to the control circuitry of CPS in turn, is obtained using a separate start-up power supply. This paper discusses the various design issues of the start-up power circuit to ensure that start-up and shut down of the CPS occurs reliably. The CPS also maintains the power factor close to unity and low total harmonic distortion in input current. The paper also provides design details of gate drive circuits employed for the CPS as well as the design of on-board power supply for the CPS. Index terms: control power supply, start-up power supply, DSFC, pre-regulator

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Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

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Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

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An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured v(sat) is discussed and compared with the theoretically predicted dependence over a range of temperatures.