Effect of Turbulence on Emerging Magnetic Flux Tubes in the Convection Zone

Working under the hypothesis that magnetic flux in the sun is generated at the bottom of the convection zone, Choudhuri and Gilman (1987; Astrophys. J. 316, 788) found that a magnetic flux tube symmetric around the rotation axis, when released at the bottom of the convection zone, gets deflected by the Coriolis force and tends to move parallel to the rotation axis as it rises in the convection zone. As a result, all the flux emerges at rather high latitudes and the flux observed at the typical sunspot latitudes remains unexplained. Choudhuri (1989; Solar Physics, in press) finds that non-axisymmetric perturbations too cannot subdue the Coriolis force. In this paper, we no longer treat the convection zone to be passive as in the previous papers, but we consider the role of turbulence in the convection zone in inhibiting the Coriolis force. The interaction of the flux tubes with the turbulence is treated in a phenomenological way as follows: (1) Large scale turbulence on the scale of giant cells can physically drag the tubes outwards, thus pulling the flux towards lower latitudes by dominating over the Coriolis force. (2) Small scale turbulence of the size of the tubes can exchange angular momentum with the tube, thus suppressing the growth of the Coriolis force and making the tubes emerge at lower latitudes. Numerical simulations show that the giant cells can drag the tubes and make them emerge at lower latitufes only if the velocities within the giant cells are unrealistically large of if the radii of the flux tubes are as small as 10 km. However, small scale turbulence can successfully suppress the growth of the Coriolis force if the tubes have radii smaller than about 300 km which may not be unreasonable. Such flux tubes can then emerge at low latitudes where sunspots are seen.

Why we must empower people to conserve Biodiversity

Conserving blodiversity has in recent years become a concern of the global elite because of the commercial potential of the emerging biotechnologies. But much of this blodiversity resides In the Third World tropics which are currently being drained of their biological and mineral wealth. This process goes on because the costs of the resultant degradation are entirely passed on to the poor of the Third World countryside who perforce have to depend on resources gathered or produced with their own labour from their surroundings. The elite have always found a substitute whenever a particular resource, or a particular locality, has been exploited to exhaustion. Indeed, given their record, commercial interests are likely to abandon the new found concern for conservation once they acquire control over adequate levels of genetic resources in ex situ storages. Long term conservation of biodiversity must therefore be attempted through empowering and suitably rewarding people of the Third World countryside whose well being is linked to the sustainable use of biological resources and conservation of the biodiversity in their own localities.

The physics and technology of gallium antimonide: An emerging optoelectronic material

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mu m. The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. (C) 1997 American Institute of Physics.

Volume modelling for emerging manufacturing technologies

The next generation manufacturing technologies will draw on new developments in geometric modelling. Based on a comprehensive analysis of the desiderata of next generation geometric modellers, we present a critical review of the major modelling paradigms, namely, CSG, B-Rep, non-manifold, and voxel models. We present arguments to support the view that voxel-based modellers have attributes that make it the representation scheme of choice in meeting the emerging requirements of geometric modelling.

Systematic trends in structural and thermodynamic properties of ternary oxides in the systems Ln-Pd-O (Ln = lanthanide element)

Isothermal sections of the phase diagrams for the systems Ln-Pd-O (Ln = lanthanide element) at 1223 K indicate the presence of two inter-oxide compounds Ln(4)PdO(7) and Ln(2)Pd(2)O(5) for Ln = La, Pr, Nd, Sm, three compounds Ln(4)PdO(7), Ln(2)PdO(4) and Ln(2)Pd(2)O(5) for Ln = Eu, Gd and only one compound of Ln(2)Pd(2)O(5) for Ln = Tb to Ho. The lattice parameters of the compounds Ln(4)PdO(7), Ln(2)PdO(4) and Ln(2)Pd(2)O(5) show systematic nonlinear variation with atomic number. The unit cell volumes decrease with increasing atomic number. The standard Gibbs energies, enthalpies and entropies of formation of the ternary oxides from their component binary oxides (Ln(2)O(3) and PdO) have been measured recently using an advanced version of the solid-state electrochemical cell. The Gibbs energies and enthalpies of formation become less negative with increasing atomic number of Ln. For all the three compounds, the variation in Gibbs energy and enthalpy of formation with atomic number is markedly non-linear. The decrease in stability with atomic number is most pronounced for Ln(2)Pd(2)O(5), followed by Ln(4)PdO(7) and Ln(2)PdO(4). This is probably related to the repulsion between Pd2+ ions on the opposite phases Of O-8 cubes in Ln(2)Pd(2)O(5), and the presence of Ln-filled O-8 cubes that share three faces with each other in Ln4PdO7. The values for entropy of formation of all the ternary oxides from their component binary oxides are relatively small. Although the entropies of formation show some scatter, the average value for Ln = La, Pr, Nd is more negative than the average value for the other lanthanide elements. From this difference, an average value for the structure transformation entropy of Ln(2)O(3) from C-type to A-type is estimated as 0.87 J.mol(-1).K-1. The standard Gibbs energies of formation of these ternary oxides from elements at 1223 K are presented as a function of lanthanide atomic number. By invoking the Neumann-Kopp rule for heat capacity, thermodynamic properties of the inter-oxide compounds at 298.15 K are estimated. (C) 2002 Elsevier Science Ltd. All rights reserved.

Trends in consanguineous marriage in Karnataka, South India, 1980–89

Analysis of data on 106,848 marriages in the cities of Bangalore and Mysore, South India, between 1980 and 1989 showed that levels of consanguineous marriage varied between cities through time and by religion. The average coefficient of inbreeding was higher in Bangalore (F = 0·0339) than in Mysore (F = 0·0203), principally reflecting large-scale, post-Independence rural migration into Bangalore. Although there was some evidence of a decline in consanguineous marriages in Mysore, there was no convincing support in either city for earlier projections of a rapid reduction in the popularity of unions between close biological relatives.