Diffusion of components via different modes during growth of the A15-V(3)Gaphase

Based on an interdiffusion study using an incremental diffusion couple in the V-Ga binary system, we have shown that V diffuses via the lattice, whereas Ga does so via grain boundaries, for the growth of the V3Ga phase. We estimate the contributions from the two different mechanisms, which are usually difficult to delineate in an interdiffusion study. Available tracer diffusion studies and the atomic arrangement in the crystal structure have been considered for a discussion on the diffusion mechanisms.

ELLIPSE FITTING USING FINITE RATE OF INNOVATION PRINCIPLES

We address the problem of parameter estimation of an ellipse from a limited number of samples. We develop a new approach for solving the ellipse fitting problem by showing that the x and y coordinate functions of an ellipse are finite-rate-of-innovation (FRI) signals. Uniform samples of x and y coordinate functions of the ellipse are modeled as a sum of weighted complex exponentials, for which we propose an efficient annihilating filter technique to estimate the ellipse parameters from the samples. The FRI framework allows for estimating the ellipse parameters reliably from partial or incomplete measurements even in the presence of noise. The efficiency and robustness of the proposed method is compared with state-of-art direct method. The experimental results show that the estimated parameters have lesser bias compared with the direct method and the estimation error is reduced by 5-10 dB relative to the direct method.

Ellipse Fitting Using the Finite Rate of Innovation Sampling Principle

Standard approaches for ellipse fitting are based on the minimization of algebraic or geometric distance between the given data and a template ellipse. When the data are noisy and come from a partial ellipse, the state-of-the-art methods tend to produce biased ellipses. We rely on the sampling structure of the underlying signal and show that the x- and y-coordinate functions of an ellipse are finite-rate-of-innovation (FRI) signals, and that their parameters are estimable from partial data. We consider both uniform and nonuniform sampling scenarios in the presence of noise and show that the data can be modeled as a sum of random amplitude-modulated complex exponentials. A low-pass filter is used to suppress noise and approximate the data as a sum of weighted complex exponentials. The annihilating filter used in FRI approaches is applied to estimate the sampling interval in the closed form. We perform experiments on simulated and real data, and assess both objective and subjective performances in comparison with the state-of-the-art ellipse fitting methods. The proposed method produces ellipses with lesser bias. Furthermore, the mean-squared error is lesser by about 2 to 10 dB. We show the applications of ellipse fitting in iris images starting from partial edge contours, and to free-hand ellipses drawn on a touch-screen tablet.

Investigation of surface activity and photoinduced diffusion of metals in solution deposited amorphous films of As2S3

Surface activity of solution deposited (SD) amorphous films of As2S3 has been investigated. Silver and copper are readily deposited on such films from appropriate aqueous ionic solutions. The metals diffuse into the films upon irradiation with energetic photons. Structure and properties of SD films have been investigated using electron microscopy, optical spectroscopy and differential scanning calorimetry. The amorphous films tend to crystallize upon metal diffusion. The stability of amorphous films, the deposition of metals on their active surfaces and the photo-induced diffusion may all be attributed to the presence or production of charged defects in amorphous chalcogenide films.

Diffusion of localized optical excitations and trap emission in ruby

Using the critical percolation conductance method the energy-dependent diffusion coefficient associated with thermally assisted transfer of the R1 line excitation between single Cr3+ ions with strain-induced randomness has been calculated in the 4A2 to E(2E) transition energies. For localized states sufficiently far away from the mobility edge the energy transfer is dominated by dipolar interactions, while very close to the mobility edge it is determined by short-range exchange interactions. Using the above energy-dependent diffusion coefficient a macroscopic diffusion equation is solved for the rate of light emission by Cr3+ ion-pair traps to which single-ion excitations are transferred. The dipolar mechanism leads to good agreement with recent measurements of the pair emission rate by Koo et al. (Phys. Rev. Lett., vol.35, p.1669 (1975)) right up to the mobility edge.

A comparative molecular dynamics study of diffusion of n-decane and 3-methyl pentane in Y zeolite

Molecular dynamics simulations are reported on the structure and dynamics of n-decane and 3-methylpentane in zeolite NaY. We have calculated several properties such as the center of mass-center of mass rdf, the end-end distance distribution, bond angle distribution and dihedral angle distribution. We have also analysed trajectory to obtain diffusivity and velocity autocorrelation function (VACF). Surprisingly, the diffusivity of 3-methylpentane which is having larger cross-section perpendicular to the long molecular axis is higher than n-decane at 300 K. Activation energies have been obtained from simulations performed at 200 K, 300 K, 350 K, 400 K and 450 K in the NVE ensemble. These results can be understood in terms of the previously known levitation effect. Arrhenious plot has higher value of slope for n-decane (5 center dot 9 kJ/mol) than 3-methylpentane (3 center dot 7 kJ/mol) in agreement with the prediction of levitation effect.

Diffusion of flexible, charged, nanoscopic molecules in solution: Size and pH dependence for PAMAM dendrimer

In order to understand self-diffusion (D) of a charged, flexible, and porous nanoscopic molecule in water, we carry out very long, fully atomistic molecular dynamics simulation of PAMAM dendrimer up to eight generations in explicit salt water under varying pH. We find that while the radius of gyration (R-g) varies as N-1/3, the self-diffusion constant (D) scales, surprisingly, as N-alpha, with alpha=0.39 at high pH and 0.5 at neutral pH, indicating a dramatic breakdown of Stokes-Einstein relation for diffusion of charged nanoscopic molecules. The variation in D as a function of radius of gyration demonstrates the importance of treating water and ions explicitly in the diffusion process of a flexible nanoscopic molecule. In agreement with recent experiments, the self-diffusion constant increases with pH, revealing the importance of dielectric friction in the diffusion process. The shape of a dendrimer is found to fluctuate on a nanosecond time scale. We argue that this flexibility (and also the porosity) of the dendrimer may play an important role in determining the mean square displacement of the dendrimer and the breakdown of the Stokes-Einstein relation between diffusion constant and the radius.

Self-diffusion of colloids at freezing

This is an introduction to the theory of interacting Brownian particles, as applied to charge-stabilised colloidal suspensions near their equilibrium liquid-solid transition. The density functional approach to the statics of the transition is reviewed briefly, and the generalised Langevin equation method for the dynamics presented in detail. Work with A.V. Indrani [1] on a self-consistent approach for calculating the excess single-particle friction is presented, which explains the observed [2] ''universal'' suppression of self-diffusion at freezing as a consequence of the universal structure-factor height at this transition. Criticisms, open questions, and challenges to theory are discussed.

A finite-rate-of-innovation signal sampling perspective of the source-filter model of speech production

We consider the speech production mechanism and the asso- ciated linear source-filter model. For voiced speech sounds in particular, the source/glottal excitation is modeled as a stream of impulses and the filter as a cascade of second-order resonators. We show that the process of sampling speech signals can be modeled as filtering a stream of Dirac impulses (a model for the excitation) with a kernel function (the vocal tract response),and then sampling uniformly. We show that the problem of esti- mating the excitation is equivalent to the problem of recovering a stream of Dirac impulses from samples of a filtered version. We present associated algorithms based on the annihilating filter and also make a comparison with the classical linear prediction technique, which is well known in speech analysis. Results on synthesized as well as natural speech data are presented.

Effect of sodium diffusion on the structural and electrical properties of Cu2ZnSnS4 thin films

Cu2ZnSnS4 (CZTS) is a kesterite semiconductor consisting of abundantly available elements. It has a band gap of 1.5 eV and a large absorption coefficient. Hence, thin films made of this material can be used as absorber layers of a solar cell. CZTS films were deposited on soda lime and Na free borosilicate glass substrates through Ultrasonic Spray Pyrolysis. The diffusion of sodium from soda lime glass was found to have a profound effect on characteristics like grain size, crystal texture and conductivity of CZTS thin films. Copper ion concentration also varied during the deposition and it was observed that the carrier concentration was enhanced when there was a deficiency of copper in the films. The effect of sodium diffusion and copper deficiency in enhancing the structural and electrical properties of CZTS films are presented in this paper. (C) 2010 Elsevier B.V. All rights reserved.

Diffusion and growth mechanism of phases in the Pd-Sn system

Growth mechanism of phases and atomic mechanism of diffusion are discussed in the Pd-Sn system. The Kirkendall marker plane location indicates that the PdSn4 phase grows because of diffusion of Sn. Atomic arrangement in the crystal indicates that Sn can diffuse through its own sublattice but Pd cannot diffuse unless antisites are present. The negligible diffusion of Pd indicates the absence of Pd antisites. The activation energy value indicates that the contribution from grain boundary diffusion cannot be neglected although experiments were conducted in the homologous temperature range of 0.7-0.79.

Growth of hafnium and zirconium suicides by reactive diffusion

Diffusion controlled growth of the phases in Hf-Si and Zr-Si systems are studied by bulk diffusion couple technique. Only two phases grow in the interdiffusion zone, although several phases are present in both the systems. The location of the Kirkendall marker plane, detected based on the grain morphology, indicates that disilicides grow by the diffusion of Si. Diffusion of the metal species in these phases is negligible. This indicates that vacancies are present mainly on the Si sublattice. The activation energies for integrated diffusion coefficients in the HfSi2 and ZrSi2 are estimated as 394 +/- 37 and 346 +/- 34 kJ mol(-1), respectively. The same is calculated for the HfSi phase as 485 +/- 42 kJ mol(-1). The activation energies for Si tracer diffusion in the HfSi2 and ZrSi2 phases are estimated as 430 +/- 36 and 348 +/- 34 kJ mol(-1), respectively. (C) 2013 Elsevier B.V. All rights reserved.

Growth of hafnium and zirconium suicides by reactive diffusion

Diffusion controlled growth of the phases in Hf-Si and Zr-Si systems are studied by bulk diffusion couple technique. Only two phases grow in the interdiffusion zone, although several phases are present in both the systems. The location of the Kirkendall marker plane, detected based on the grain morphology, indicates that disilicides grow by the diffusion of Si. Diffusion of the metal species in these phases is negligible. This indicates that vacancies are present mainly on the Si sublattice. The activation energies for integrated diffusion coefficients in the HfSi2 and ZrSi2 are estimated as 394 +/- 37 and 346 +/- 34 kJ mol(-1), respectively. The same is calculated for the HfSi phase as 485 +/- 42 kJ mol(-1). The activation energies for Si tracer diffusion in the HfSi2 and ZrSi2 phases are estimated as 430 +/- 36 and 348 +/- 34 kJ mol(-1), respectively. (C) 2013 Elsevier B.V. All rights reserved.