Measurement of Partition Coefficients of Substituted Benzoic Acids between Two Immiscible Solvents by Hyper-Rayleigh Scattering

We demonstrate that the hyper-Rayleigh scattering technique can be employed to measure the partition coefficient (k(p)) of a solute in a mixture of two immiscible solvents. Specifically, partition coefficients of six substituted benzoic acids in water/toluene (1:1 v/v) and water/chloroform (1:1 v/v) systems have been measured. Our values compare well with the k(p) values measured earlier by other techniques, The advantages offered by this technique are also discussed.

Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy

In this article, we present the detailed investigations on platinum related midgap state corresponding to E-c -0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1.1 MeV) gamma rays, we observed that the concentration of the midgap state increases and follows a square dependence with irradiation dose. However, the concentration of the acceptor corresponding to E-c -20.28 eV remained constant. Furthermore, from the studies on passivation by atomic hydrogen and thermal reactivation, we noticed that the E-c -0.52 eV level reappears in the samples annealed at high temperatures after hydrogenation. The interaction of platinum with various defects and the qualitative arguments based on the law of mass action suggest that the platinum related midgap defect might possibly correspond to the interstitial platinum-divacancy complex (V-Pt-V).

pi-conjugation and conformation in a semiconducting polymer: small angle x-ray scattering study

Small angle x-ray scattering (SAXS) in a poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) solution has shown the important role of pi-electron conjugation in controlling the chain conformation and assembly. By increasing the extent of conjugation from 30 to 100%, the persistence length (l(p)) increases from 20 to 66 angstrom. Moreover, a pronounced second peak in the pair distribution function has been observed in a fully conjugated chain, at larger length scales. This feature indicates that the chain segments tend to self-assemble as the conjugation along the chain increases. Xylene enhances the rigidity of the PPV backbone to yield extended structures, while tetrahydrofuran solvates the side groups to form compact coils in which the lp is much shorter.

Raman scattering investigation of the phase transitions in (NH4)2ZnBr4

Results of Raman spectroscopic studies of (NH4)2ZnBr4 crystal in the spectral range from 20-250 cm-1 and over a range of temperature from 90K to 440K covering the low temperature ferroelectric and high temperature incommensurate phases are presented. The plots of the integrated areas and peak heights of the strong Raman lines versus temperature show anomalous behaviour near the two phase transitions.

A simple circuit to aid direct measurement of capture cross sections of deep level impurities

An inexpensive and simple circuit to aid the direct measurement of majority carrier capture cross sections of impurity levels in the band gap of a semiconductor by the variable width filling pulse technique is presented. With proper synchronisation, during the period of application of the pulse, the device is disconnected from the capacitance meter to avoid distortion of the pulse and is reconnected again to the meter to record the emission transient. Modes of operation include manual triggering for long emission transients, repetitive triggering for isothermal and DLTS measurements and the DLTS mode which is to be used with signal analysers that already provide a synchronising pulse for disconnection.

Light scattering studies on solutions of chlorinated rubber

Measurements have been made of the depolarisation factors \sigma u ,\sigma v ,\sigma h, and the intensity of scattering in the horizontal transverse direction, in the case of solutions of four different samples of chlorinated rubber in carbon tetrachloride. The size, shape and molecular weight of the micelles have been deduced by the application of the light scattering theories of Gans, Vrklajan and Katalinic and Debye. The extent to which the degradation of the rubber molecule occurs on chlorination has also been assessed.

Optimum choice of wavelengths in the anomalous scattering technique with synchrotron radiation

A formula has been derived for the mean-square error in the phases of crystal reflections determined through the multiwavelength anomalous scattering method.The error is written in terms of a simple function of the positions in the complex plane of the 'centres' corresponding to the different wavelengths. For the case of three centres, the mean-square error is inversely proportional to the area of the triangle formed by them.

New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductors

A new method is suggested where the thermal activation energy is measured directly and not as a slope of an Arrhenius plot. The sample temperature T is allowed to fluctuate about a temperature T0. The reverse-biased sample diode is repeatedly pulsed towards zero bias and the transient capacitance C1 at time t1 is measured The activation energy is obtained by monitoring the fluctuations in C1 and T. The method has been used to measure the activation energy of the gold acceptor level in silicon.

Stress Analysis of Deep Beams

In a beam whose depth is comparable to its span, the distribution of bending and shear stresses differs appreciably from those given by the ordinary flexural theory. In this paper, a general solution for the analysis of a rectangular, single-scan beam, under symmetrical loading is developed. The Multiple Fourier procedure is employed using four series by which it has been possible to satisfy all boundary and the resulting relation among the co-efficient are derives.

Resonances, scattering theory, and rigged Hilbert spaces

The problem of decaying states and resonances is examined within the framework of scattering theory in a rigged Hilbert space formalism. The stationary free,''in,'' and ''out'' eigenvectors of formal scattering theory, which have a rigorous setting in rigged Hilbert space, are considered to be analytic functions of the energy eigenvalue. The value of these analytic functions at any point of regularity, real or complex, is an eigenvector with eigenvalue equal to the position of the point. The poles of the eigenvector families give origin to other eigenvectors of the Hamiltonian: the singularities of the ''out'' eigenvector family are the same as those of the continued S matrix, so that resonances are seen as eigenvectors of the Hamiltonian with eigenvalue equal to their location in the complex energy plane. Cauchy theorem then provides for expansions in terms of ''complete'' sets of eigenvectors with complex eigenvalues of the Hamiltonian. Applying such expansions to the survival amplitude of a decaying state, one finds that resonances give discrete contributions with purely exponential time behavior; the background is of course present, but explicitly separated. The resolvent of the Hamiltonian, restricted to the nuclear space appearing in the rigged Hilbert space, can be continued across the absolutely continuous spectrum; the singularities of the continuation are the same as those of the ''out'' eigenvectors. The free, ''in'' and ''out'' eigenvectors with complex eigenvalues and those corresponding to resonances can be approximated by physical vectors in the Hilbert space, as plane waves can. The need for having some further physical information in addition to the specification of the total Hamiltonian is apparent in the proposed framework. The formalism is applied to the Lee–Friedrichs model and to the scattering of a spinless particle by a local central potential. Journal of Mathematical Physics is copyrighted by The American Institute of Physics.

Electrical properties of nickel-related deep levels in silicon

Electrically active deep levels related to nickel in silicon are studied under different diffusion conditions, quenching modes, and annealing conditions. The main nickel-related level is at Ev+0.32 eV. Levels at Ev+0.15 and Ev+0.54 eV are not related to nickel while those at Ev+0.50 and Ev+0.28 eV may be nickel related. Their concentrations depend on the quenching mode. There is no nickel-related level in the upper half of the band gap. The complicated annealing behavior of the main nickel-related level is explained on the basis of the formation and dissociation of a nickel-vacany complex. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Electron-electron scattering and ultrasonic attenuation in potassium

The electron-electron scattering contribution to the ultrasonic attenuation in potassium at low temperatures is evaluated using the Landau Fermi liquid theory. The scattering function is evaluated using the approximation suggested by MacDonald and Geldart. The results are compared with theoretically evaluated electron-phonon scattering contributions. The results show that the electron-electron scattering contribution is of the same order as the electron-phonon scattering contribution in the 2–5 K range. Below 2 K the electron-electron scattering predominates.

Structural origin of set-reset processes in Ge15Te83Si2 glass investigated using in situ Raman scattering and transmission electron microscopy

We report here that the structural origin of an easily reversible Ge15Te83Si2 glass can be a promising candidate for phase change random access memories. In situ Raman scattering studies on Ge15Te83Si2 sample, undertaken during the amorphous set and reset processes, indicate that the degree of disorder in the glass is reduced from off to set state. It is also found that the local structure of the sample under reset condition is similar to that in the amorphous off state. Electron microscopic studies on switched samples indicate the formation of nanometric sized particles of c-SiTe2 structure. ©2009 American Institute of Physics

Investigation of Deep Defects Due to -Particle Irradiation in n-Silicon

Electrical properties of deep defects induced in n-silicon by -particles of about 10 MeV energy at a dose of 1014 and 1015 cm-2 are studied by DLTS. The levels at Ec -0.18 eV, Ec -0.26 eV, and Ec -0.48 eV are identified as A center, V2 (=/-) and V2 (-/0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradiation related levels at Ec -0.28 eV and Ec -0.51 eV could not be related to any known center.