64 resultados para Bridge circuits


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The paper focuses on the reliability-based design optimization of gravity wall bridge abutments when subjected to active condition during earthquakes. An analytical study considering the effect of uncertainties in the seismic analysis of bridge abutments is presented. Planar failure surface has been considered in conjunction with the pseudostatic limit equilibrium method for the calculation of the seismic active earth pressure. Analysis is conducted to evaluate the external stability of bridge abutments when subjected to earthquake loads. Reliability analysis is used to estimate the probability of failure in three modes of failure viz. sliding failure of the wall on its base, overturning failure about its toe (or eccentricity failure of the resultant force) and bearing failure of foundation soil below the base of wall. The properties of backfill and foundation soil below the base of abutment are treated as random variables. In addition, the uncertainties associated with characteristics of earthquake ground motions such as horizontal seismic acceleration and shear wave velocity propagating through backfill soil are considered. The optimum proportions of the abutment needed to maintain the stability are obtained against three modes of failure by targeting various component and system reliability indices. Studies have also been made to study the influence of various parameters on the seismic stability.

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A method of testing for parametric faults of analog circuits based on a polynomial representation of fault-free function of the circuit is presented. The response of the circuit under test (CUT) is estimated as a polynomial in the applied input voltage at relevant frequencies in addition to DC. Classification or Cur is based on a comparison of the estimated polynomial coefficients with those of the fault free circuit. This testing method requires no design for test hardware as might be added to the circuit fly some other methods. The proposed method is illustrated for a benchmark elliptic filter. It is shown to uncover several parametric faults causing deviations as small as 5% from the nominal values.

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In this paper, the effects of energy quantization on different single-electron transistor (SET) circuits (logic inverter, current-biased circuits, and hybrid MOS-SET circuits) are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantizationmainly increases the Coulomb blockade area and Coulomb blockade oscillation periodicity, and thus, affects the SET circuit performance. A new model for the noise margin of the SET inverter is proposed, which includes the energy quantization effects. Using the noise margin as a metric, the robustness of the SET inverter is studied against the effects of energy quantization. An analytical expression is developed, which explicitly defines the maximum energy quantization (termed as ``quantization threshold'') that an SET inverter can withstand before its noise margin falls below a specified tolerance level. The effects of energy quantization are further studiedfor the current-biased negative differential resistance (NDR) circuitand hybrid SETMOS circuit. A new model for the conductance of NDR characteristics is also formulated that explains the energy quantization effects.

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A simple, low-cost, constant frequency, analog controller is proposed for the front-end half-bridge rectifier of a single-phase transformerless UPS system to maintain near unity power factor at the input and zero dc-offset voltage at the output. The controller generates the required gating pulses by comparing the input current with a periodic, bipolar, linear carrier without sensing the input voltage. Two voltage controllers and a single integrator with reset are used to generate the required carrier. All the necessary control operations can be performed without using any PLL, multiplier and/or divider. The controller can be fabricated as a single integrated circuit. The control concept is validated through simulation and also experimentally on an 800W half-bridge rectifier. Experimental results are presented for ac-dc application, and also for ac-dc-ac UPS application with both sinusoidal and nonlinear loads. The simulation and experimental results agree well.

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A new performance metric, Peak-Error Ratio (PER) has been presented to benchmark the performance of a class of neuron circuits to realize neuron activation function (NAF) and its derivative (DNAF). Neuron circuits, biased in subthreshold region, based on the asymmetric cross-coupled differential pair configuration and conventional configuration of applying small external offset voltage at the input have been compared on the basis of PER. It is shown that the technique of using transistor asymmetry in a cross-coupled differential pair performs on-par with that of applying external offset voltage. The neuron circuits have been experimentally prototyped and characterized as a proof of concept on the 1.5 mu m AMI technology.

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A new performance metric, Peak-Error Ratio (PER) has been presented to benchmark the performance of a class of neuron circuits to realize neuron activation function (NAF) and its derivative (DNAF). Neuron circuits, biased in subthreshold region, based on the asymmetric cross-coupled differential pair configuration and conventional configuration of applying small external offset voltage at the input have been compared on the basis of PER. It is shown that the technique of using transistor asymmetry in a cross-coupled differential pair performs on-par with that of applying external offset voltage. The neuron circuits have been experimentally prototyped and characterized as a proof of concept on the 1.5 mu m AMI technology.

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Continuous common mode feedback (CMFB) circuits having high input impedance and low distortion are proposed. The proposed circuits are characterized for 0.18 mu m CMOS process with 1.8 V supply. Simulation results indicate that the proposed common mode detector consumes no standby power and CMFB circuit consumes 27-34% less power than previous high swing CMFB circuits.

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A three-terminal capacitance bridge is developed for the measurement of the dielectric constant of lossy liquids. Using this modified ratio transformer bridge, the capacitance shunted by a resistance as low as 50 Omega is measured at 10 kHz. The capacitance error associated with the inductance of the connecting wire is compensated using the novel method of introducing an additional transformer to the existing ratio transformer bridge. Other sources of capacitance errors, such as the non-zero output impedence of the ratio transformer and the shield capacitances of the cables, are discussed.

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Materials with high thermal conductivity and thermal expansion coefficient matching with that of Si or GaAs are being used for packaging high density microcircuits due to their ability of faster heat dissipation. Al/SiC is gaining wide acceptance as electronic packaging material due to the fact that its thermal expansion coefficient can be tailored to match with that of Si or GaAs by varying the Al:SiC ratio while maintaining the thermal conductivity more or less the same. In the present work, Al/SiC microwave integrated circuit (MIC) carriers have been fabricated by pressureless infiltration of Al-alloy into porous SiC preforms in air. This new technique provides a cheaper alternative to pressure infiltration or pressureless infiltration in nitrogen in producing Al/SiC composites for electronic packaging applications. Al-alloy/65vol% SiC composite exhibited a coefficient of thermal expansion of 7 x 10(-6) K-1 (25 degrees C-100 degrees C) and a thermal conductivity of 147 Wm(-1) K-1 at 30 degrees C. The hysteresis observed in thermal expansion coefficient of the composite in the temperature range 100 degrees C-400 degrees C has been attributed to the presence of thermal residual stresses in the composite. Thermal diffusivity of the composite measured over the temperature range from 30 degrees C to 400 degrees C showed a 55% decrease in thermal diffusivity with temperature. Such a large decrease in thermal diffusivity with temperature could be due to the presence of micropores, microcracks, and decohesion of the Al/SiC interfaces in the microstructure (all formed during cooling from the processing temperature). The carrier showed satisfactory performance after integrating it into a MIC.

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For the first time, the impact of energy quantisation in single electron transistor (SET) island on the performance of hybrid complementary metal oxide semiconductor (CMOS)-SET transistor circuits has been studied. It has been shown through simple analytical models that energy quantisation primarily increases the Coulomb Blockade area and Coulomb Blockade oscillation periodicity of the SET device and thus influences the performance of hybrid CMOS-SET circuits. A novel computer aided design (CAD) framework has been developed for hybrid CMOS-SET co-simulation, which uses Monte Carlo (MC) simulator for SET devices along with conventional SPICE for metal oxide semiconductor devices. Using this co-simulation framework, the effects of energy quantisation have been studied for some hybrid circuits, namely, SETMOS, multiband voltage filter and multiple valued logic circuits. Although energy quantisation immensely deteriorates the performance of the hybrid circuits, it has been shown that the performance degradation because of energy quantisation can be compensated by properly tuning the bias current of the current-biased SET devices within the hybrid CMOS-SET circuits. Although this study is primarily done by exhaustive MC simulation, effort has also been put to develop first-order compact model for SET that includes energy quantisation effects. Finally, it has been demonstrated that one can predict the SET behaviour under energy quantisation with reasonable accuracy by slightly modifying the existing SET compact models that are valid for metallic devices having continuous energy states.

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In this paper, a new five-level inverter topology for open-end winding induction-motor (IM) drive is proposed. The open-end winding IM is fed from one end with a two-level inverter in series with a capacitor-fed H-bridge cell, while the other end is connected to a conventional two-level inverter. The combined inverter system produces voltage space-vector locations identical to that of a conventional five-level inverter. A total of 2744 space-vector combinations are distributed over 61 space-vector locations in the proposed scheme. With such a high number of switching state redundancies, it is possible to balance the H-bridge capacitor voltages under all operating conditions including overmodulation region. In addition to that, the proposed topology eliminates 18 clamping diodes having different voltage ratings compared with the neutral point clamped inverter. On the other hand, it requires only one capacitor bank per phase, whereas the flying-capacitor scheme for a five-level topology requires more than one capacitor bank per phase. The proposed inverter topology can be operated as a three-level inverter for full modulation range, in case of any switch failure in the capacitor-fed H-bridge cell. This will increase the reliability of the system. The proposed scheme is experimentally verified on a four-pole 5-hp IM drive.

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The increasing variability in device leakage has made the design of keepers for wide OR structures a challenging task. The conventional feedback keepers (CONV) can no longer improve the performance of wide dynamic gates for the future technologies. In this paper, we propose an adaptive keeper technique called rate sensing keeper (RSK) that enables faster switching and tracks the variation across different process corners. It can switch upto 1.9x faster (for 20 legs) than CONV and can scale upto 32 legs as against 20 legs for CONV in a 130-nm 1.2-V process. The delay tracking is within 8% across the different process corners. We demonstrate the circuit operation of RSK using a 32 x 8 register file implemented in an industrial 130-nm 1.2-V CMOS process. The performance of individual dynamic logic gates are also evaluated on chip for various keeper techniques. We show that the RSK technique gives superior performance compared to the other alternatives such as Conditional Keeper (CKP) and current mirror-based keeper (LCR).

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The constructional details of an 18-bit binary inductive voltage divider (IVD) for a.c. bridge applications is described. Simplified construction with less number of windings, interconnection of winding through SPDT solid state relays instead of DPDT relays, improves reliability of IVD. High accuracy for most precision measurement achieved without D/A converters. The checks for self consistency in voltage division shows that the error is less than 2 counts in 2(18).

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This paper proposes the development of dodecagonal (12-sided) space vector diagrams from cascaded H-Bridge inverters. As already reported in literatures, dodecagonal space vector diagrams have many advantages over conventional hexagonal ones. Some of them include the absence of 6n±1, (n=odd) harmonics from the phase voltage, and the extension of the linear modulation range. In this paper, a new power circuit is proposed for generating multiple dodecagons in the space vector plane. It consists of two cascaded H-Bridge cells fed from asymmetric dc voltage sources. It is shown that, with proper PWM timing calculation and placement of active and zero vectors, a very high quality of sine-wave can be produced. At the same time, the switching frequency of individual cells can be reduced substantially. Detailed PWM analysis, one design example and an elaborate simulation study is presented to support the proposed idea.