Complex Permittivity Characteristics of Epoxy Nanocomposites at Low Frequencies

The complex permittivity characteristics of epoxy nanocomposite systems were examined and an attempt has been made to understand the underlying physics governing some of the unique macroscopic dielectric behaviors. The experimental investigations were performed using two different nanocomposite systems with low filler concentrations over the frequency range of 10(-2)-400 Hz, but for some cases, the data has been reported upto 10(6) Hz for a better understanding of the behaviors. Results demonstrate that nanocomposites do possess unique permittivity behaviors as compared to those already known for unfilled polymer and microcomposite systems. The nanocomposite real permittivity and tan delta values are found to be lower than that of unfilled epoxy. In addition, results show that interfacial polarization and charge carrier mobilities are suppressed in epoxy nanocomposite systems. The complex permittivity spectra coupled with the ac conductivity characteristics with respect to frequency was found to be sufficient to identify several of the nanocomposite characteristics like the reduction in permittivity values, reduction in the interfacial polarization mechanisms and the electrical conduction behaviors. Analysis of the results are also performed using electric modulus formalisms and it has been seen that the nanocomposite dielectric behaviors at low frequencies can also be explained clearly using this formalism.

Dielectric and Impedance Studies on 0.5Li(2)O-0.5K(2)O-2B(2)O(3) Glasses

Transparent glasses in the system 0.5Li(2)O-0.5K(2)O-2B(2)O(3) (LKBO) were fabricated via the conventional melt quenching technique. Amorphous and glassy nature of the samples was confirmed by X-ray diffraction and differential scanning calorimetry (DSC) respectively. Complex dielectric and impedance studies were conducted on the samples at different temperatures in the 100 Hz-10 MHz frequency range. ac conductivity was calculated from the dielectric data and the conductivity relaxation was found to obey the Jonscher's law. The Nyquist's plots (Z `'(omega) vs. Z'(omega)) showed single suppressed semicircles at all the temperatures under study indicating the non ideal Debye type relaxation process to be active. Activation energies for conduction and relaxation process were calculated using the Arrhenius relation. The UV-visible optical transmission spectra was shown a wide transmission window and calculated optical band gap was found to be 5.67 eV.

Electron-beam irradiation effects on poly(ethylene-co-vinyl acetate) polymer

Poly(ethylene-co-vinyl acetate) (EVA) films were irradiated with a 1.2MeV electron beam at varied doses over the range 0-270kGy in order to investigate the modifications induced in its optical, electrical and thermal properties. It was observed that optical band gap and activation energy of EVA films decreased upon electron irradiation, whereas the transition dipole moment, oscillator strength and number of carbon atoms per cluster were found to increase upon irradiation. Further, the dielectric constant, the dielectric loss, and the ac conductivity of EVA films were found to increase with an increase in the dose of electron radiation. The result further showed that the thermal stability of EVA film samples increased upon electron irradiation.

Electrical transport studies in alkali borovanadate glasses

The ac conductivity and dielectric behaviors of sodium borovanadate glasses have been studied over wide ranges of composition and frequency. The de activation energies calculated from the complex impedance plots decrease linearly with the Na2O concentration, indicating that ionic conductivity dominates in these glasses. The possible origin of low-temperature departures of conductivity curves (from linearity) of vanadium-rich glasses in log sigma versus 1/T plots is discussed. The ac conductivities have been fitted to the Almond-West type power law expression with use of a single value of s. It is found that in most of the glasses s exhibits a temperature-dependent minimum. The dielectric data are converted into moduli (M*) and are analyzed using the Kohlrausch-William-Watts stretched exponential function, The activation barriers, W, calculated from the temperature-dependent dielectric loss peaks compare well with the activation barriers calculated from the de conductivity plots. The stretching exponent beta is found to be temperature independent and is not likely to be related as in the equation beta = 1 - s, An attempt is made to elucidate the origin of the stretching phenomena. It appears that either a model of the increased contribution of polarization energy (caused by the increased modifier concentration) and hence the increased monopole-induced dipole interactions or a model based on increased intercationic interactions can explain the slowing down of the primitive relaxation in ionically conducting glasses.

Preparation and characterization of multiwall carbon nanotube/polypyrrole coaxial fibrils

Multiwall carbon nanotube (MWNT)/polypyrrole (PPy) fibrils were fabricated by template-free in situ electrochemical deposition of PPy over MWNTs, and characterized by electron microscopy and electrical measurements. Scanning and transmission electron microscopy studies reveal that PPy coating on the surface of nanotube is quite uniform throughout the length, with the possibility of forming unique Y-junctions. Current (I)-voltage (V) characteristics at various temperatures show nonlinearity due to tunneling and hopping contributions to transport across the barriers. AC conductivity measurements (300-4.2 K) show that the onset frequency scales with temperature, and the nanoscale connectivity in MWNT/PPy fibrils decreases with the lowering of temperature. (C) 2011 Elsevier B.V. All rights reserved.

Electron-Beam-Induced Modifications in High-Density Polyethylene

Post-irradiation studies have been carried out to elucidate the effects of electron beam irradiation on the structural, optical, dielectric, and thermal properties of high-density polyethylene (HDPE) films. The experimental results showed that both the optical band gap and activation energy of HDPE films decreases with an increase in the doses of electron radiation. The electrical measurements showed that dielectric constant and the ac conductivity of HDPE increases with an increase in the dose of electron radiation. The thermal analysis carried out using DSC and TGA revealed that the melting temperature, degree of crystallinity, and thermal stability of the HDPE films increased, obviously, due to the predominant cross-linking reaction following high doses of electron irradiation.

Lithium ion transport in Li2SO4-Li2O-B2O3 glasses

Electrical conductivity and dielectric relaxation studies with a wide range of compositions of lithium ion conducting glasses belonging to the ternary glass system Li2SO4-Li2O-B2-O3- have been carried out over the temperature range 150-450 K and between 10 - 10(7) Hz. DC conductivities exhibit two different activation regions. This seems to suggest the presence of a cluster tissue texture in these glasses with weakly ordered clusters of Li2SO4 and lithium berates being held together by a truly amorphous tissue of the same average composition as clusters. AC conductivity behaviour of these glasses has been analysed using both power law and stretched exponential relaxation functions. The variation of the power law exponent s and the stretched exponent beta with temperature seems to be consistent with the presence of a cluster tissue texture in these glasses.

Role of PbO in lithium ion transport in Li2O-PbO-B2O3 glasses

Abstract: A wide range of compositions of grasses in the ternary Li2O-PbO-B2O3 glass system was prepared, and de and ac conductivity measurements were carried out on these glasses. The presence of lead leads to a decrease in de conductivities and an increase in the activation energies. This is likely to be due to the increase of the partial charges on the oxygen atoms and to the presence of the lone pair on the Pb atom; both of these factors impede lithium ion motion. The ac conductivity and dielectric behavior of these glasses support such a conjecture. (C) 2000 Elsevier Science Ltd.

Dielectric Relaxation in CaO-Bi2O3-B2O3 Glasses

Glasses in the system CaO-Bi2O3-B2O3 (in molar ratio) have been prepared using melt-quenching route. Ion transport characteristics were investigated for this glass using electric modulus, ac conductivity and impedance measurements. The ac conductivity was rationalized using Almond-West power law. Dielectric relaxation has been analyzed based on the behavior of electric modulus behavior. The activation energy associated with the electrical relaxation determined from the electric modulus spectra was found to be 1.76 eV, close to that the activation energy for dc conductivity (1.71 eV) indicating that the same species took part in both the processes. The stretched exponent beta (0.5-0.6) is invariant with temperature for the present glasses.

Alternating current conduction and impedance spectroscopy analysis on pulsed excimer laser ablated (Pb, La)TiO3 thin films

Lanthanum doped lead titanate (PLT) thin films were identified as the most potential candidates for the pyroelectric and memory applications. PLT thin films were deposited on Pt coated Si by excimer laser ablation technique. The polarization behavior of PLT thin films has been studied over a temperature range of 300 K to 550 K. A universal power law relation was brought into picture to explain the frequency dependence of ac conductivity. At higher frequency region ac conductivity of PLT thin films become temperature independent. The temperature dependence of ac conductivity and the relaxation time is analyzed in detail. The activation energy obtained from the ac conductivity was attributed to the shallow trap controlled space charge conduction in the bulk of the sample. The impedance analysis for PLT thin films were also performed to get insight of the microscopic parameters, like grain, grain boundary, and film-electrode interface etc. The imaginary component of impedance Z" exhibited different peak maxima at different temperatures. Different types of mechanisms were analyzed in detail to explain the dielectric relaxation behavior in the PLT thin films.

Growth and study of BaZrO3 thin films by pulsed excimer laser ablation

Thin films of BaZrO3 (BZ) were grown using a pulsed laser deposition technique on platinum coated silicon substrates. Films showed a polycrystalline perovskite structure upon different annealing procedures of in-situ and ex-situ crystallization. The composition analyses were done using Energy dispersive X-ray analysis (EDAX) and Secondary ion mass spectrometry (SIMS). The SIMS analysis revealed that the ZrO2 formation at the right interface of substrate and the film leads the degradation of the device on the electrical properties in the case of ex-situ crystallized films. But the in-situ films exhibited no interfacial formation. The dielectric properties have been studied for the different temperatures in the frequency regime of 40 Hz to 100kHz. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are correspond to oxygen vacancy motion. The electrical modulus is fitted to a stretched exponential function and the results clearly indicate the presence of the non-Debye type of dielectric relaxation in these materials.

Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti/SiO2/Si substrate

Highly (110) preferred orientated antiferroelectric PbZrO3 (PZ) and La-modified PZ thin films have been fabricated on Pt/Ti/SiO2/Si substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The Tc has been observed to decrease by ∼ 17 °C per 1 mol % of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193 kV/cm at 80 °C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an ABO3 perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2 mol % La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10 kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

Alumina (Al2O3) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 degrees C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance. AC conductivity and activation energy were determined and the results are discussed. (C) 2011 Elsevier B.V. All rights reserved.

Preparation and characterization chemistry of nano-crystalline Ni-Cu-Zn ferrite

In submitted research; nanocrystalline powders having elements Ni0.5Cu0.25Zn0.25Fe2 xInxO4 with varied amounts of indium ( x = 0.0, 0.1, 0.2, 0.3 and 0.4) were grown-up by modified citrate to nitrate alchemy. The realism of single phase cubic spinel creation of the synthesized ferrite samples was studied by the DTA-TGA, XRD, SEM, EDX, FT-IR, VSM and dielectric measurements. SEM was applied to inspect the morphological variations and EDX was used to determine the compositional mass ratios. The studies on the dielectric constant (epsilon'), dielectric loss (epsilon `'), loss tangent (tan delta), ac conductivity (sigma(ac)), resistive and reactive parts of the impedance analysis (Z' and Z `') at room temperature were also carried out. The saturation magnetizations (Ms) were determined using the vibrating sample magnetometer (VSM). Ms. decreased with the increase In3+ doping content, as Fe3+ of 5(mu B) ions are replaced by In3+ of 5 mu(B) ions. (C) 2012 Elsevier B. V. All rights reserved.

Electrical transport characteristics of ZnO-Bi2O3-B2O3 glasses

Optically clear glasses in the ZnO-Bi2O3-B2O3 (ZBBO) system were fabricated via the conventional melt-quenching technique. Dielectric constant and loss measurements carried out on ZBBO glasses unraveled nearly frequency (1 kHz-10 MHz)-independent dielectric characteristics associated with significantly low loss (D = 0.004). However, weak temperature response was found with temperature coefficient of dielectric constant 18 +/- 4 ppm A degrees C-1 in the 35-250 A degrees C temperature range. The conduction and relaxation phenomena were rationalized using universal AC conductivity power law and modulus formalism respectively. The activation energy for relaxation determined using imaginary parts of modulus peaks was 2.54 eV which was close to that of the DC conduction implying the involvement of similar energy barriers in both the processes. Stretched and power exponents were temperature dependent. The relaxation and conduction in these glasses were attributed to the hoping and migration of Bi3+ cations in their own and different local environment.