Time-Resolved Photoluminescence and Microwave Conductivity at Semiconductor Electrodes: Depletion Layer Effects

Analytical expressions which include depletion layer effects on low-injection carrier relaxation are being presented for the first time here. Starting from the continuity equation for the minority carriers, we derive expressions for the output signal pertinent to time-resolved microwave and luminescence experiments. These are valid for the time domain that usually overlaps with the time scales of surface processes, such as charge transfer and trapping. Apart from the usual pulse form of illumination, theoretical expressions pertaining to other forms of illumination such as switch-on and switch-off transient modes, a periodic mode, and a steady state and their various inter-relationships are derived here. The expressions obtained are seen to be generalizations of existing flat-band low-injection results in the Limit of early or initial band bendings. The importance of the depletion layer as an experimental parameter is clearly seen in the limit of larger band bendings wherein it is shown, unlike the flat-band case, to exhibit pure exponential forms of carrier relaxation. Our results are consistent with the main conclusions of the numerical and experimental work published recently. Furthermore, this work provides the actual functional relationships between the applied potential and observed carrier decay. This should enable one to extract the surface kinetic parameters, after deciding on the dominant mode of carrier relaxation at the interface, whether charge transfer or trapping, by studying the potential dependence of the fate of relaxation.

High-Q, Ag-doped 123 resonator on unbuffered sapphire substrate

The microwave performance of an Ag-doped YBa2Cu3O7-x, thin-film X-band microstrip resonator on unbuffered sapphire substrate is reported. Q-values of 2400 and 1200 have been obtained al 15R and 77K, respectively, which correspond to R(s) values of 330 mu Omega and 680 mu Omega.

Investigations on sodium tin phosphate and tin pyrophosphate glasses

Glasses of the alkali tin phosphate system have been investigated. The infrared absorption and fluorescence spectra of the glasses have been examined. It is found that tin is present in both + 2 and + 4 oxidation states. Also tin ions occupy four- or six-coordinated sites in the glass.

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.

Preparation and dielectric properties of zinc and cadmium doped barium tantalates, Ba3Zn1?xCdxTa2O9

Members of the Ba2Zn1-xCdxTa2O9 (0 less than or equal to x less than or equal to 1) series have been synthesized by solid state reactions at 1473K. Powder x-ray diffraction studies show a cubic perovskite cell with a similar to 4.1 Angstrom which increases with increase in x. Electron diffraction studies show the presence of hexagonal ordered perovskite structure in addition to the cubic structure seen by x-rays, the x = 0.5 composition showing more ordered crystallites. These samples show high dielectric constants with a maximum (epsilon(r) = 30 at 1 kHz) for the x = 0.5 member. The dielectric loss increases with increase in x at all the frequencies under study.

Origin of carrier-type reversal in Pb-Ge-Se glasses: A detailed thermal, electrical, and structural study

A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb-Ge-Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0-20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band structures of Ge-Se glasses has been considered. The p -->n transition has been attributed to the energetic disposition of the sp(3)d(2) band of Pb atoms, which is located closely above the lone pair band of selenium. This feature makes Pb unique in the context of p -->n transition of chalcogenide glasses. The model can be extended successfully to account for the CTR behavior observed in Bi containing chalcogenide glasses also.

Structure and silver ion transport in AgI-Ag2MoO4 glasses: A molecular dynamics study

The structure and dynamics of silver ion conducting AgI-Ag2MoO4 glasses have been simulated by molecular dynamics simulation over a wide range of compositions. Formation of silver iodide like aggregates have been identified only in the AgI rich glasses. Increase in silver ion conductivity with an increase in AgI content in the glass is seen as in experiments. The dynamics of ion transport suggests that Ag+ ion transport occurs largely through paths connected by silver ion sites of mixed iodide-oxide coordination. The Van Hove correlation functions indicate that Ag+ ions prefer migration along the pathways formed with connected sites of similar coordination.

Synthesis of nanodispersed phases during rapid solidification and crystallization of glasses in Ti75Ni25 alloys

The formation of the metallic glass and crystalline phases and related microstructures and the decomposition behavior of rapidly solidified Ti75Ni25 alloys obtained under different processing conditions have been investigated in detail. The competition between glass transition and nucleation of beta-Ti during rapid solidification leads to the possibility of synthesizing the nanocomposites of beta-Ti and glass. Additionally, it is shown that the presence of a small amount of Si also promotes simultaneous nucleation of fine Ti2Ni intermetallic compound. Thermodynamic calculation of the metastable phase diagram indicates the presence of a metastable eutectic reaction between alpha-Ti and Ti2Ni. Evidence of this reaction at lower cooling rates has been presented. On heating, the glass decomposes through this reaction. Finally, on the basis of understanding of the microstructural evolution during decomposition, a new approach has been adopted to synthesize a nanodispersed composite of alpha-Ti in the crystalline Ti2Ni matrix with a narrow size distribution by controlling the devitrification heat treatment of the metallic glass.

Temperature dependence of non-Debye disorder in doped manganites

Ca-doped manganite La1-xCaxMnO3 samples with x=0.2 and 0.4 were investigated by extended x-ray absorption fine structure (EXAFS) as a function of temperature and preparation method. The samples exhibit characteristic resistivity change across the metal-insulator (MI) transition temperature whose shape and position depend on Ca-doping concentration and sample thermal treatment. EXAFS results evidenced an increase of nonthermal disorder at the MI transition temperature which is significantly correlated with the resistivity behavior.

X-ray reflectivity study of semiconductor interfaces

The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin GeSi-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.

Lithium ion transport in Li2SO4-Li2O-B2O3 glasses

Electrical conductivity and dielectric relaxation studies with a wide range of compositions of lithium ion conducting glasses belonging to the ternary glass system Li2SO4-Li2O-B2-O3- have been carried out over the temperature range 150-450 K and between 10 - 10(7) Hz. DC conductivities exhibit two different activation regions. This seems to suggest the presence of a cluster tissue texture in these glasses with weakly ordered clusters of Li2SO4 and lithium berates being held together by a truly amorphous tissue of the same average composition as clusters. AC conductivity behaviour of these glasses has been analysed using both power law and stretched exponential relaxation functions. The variation of the power law exponent s and the stretched exponent beta with temperature seems to be consistent with the presence of a cluster tissue texture in these glasses.

Hidden order in serrated flow of metallic glasses

We report results of statistical and dynamic analysis of the serrated stress-time curves obtained from compressive constant strain-rate tests on two metallic glass samples with different ductility levels in an effort to extract hidden information in the seemingly irregular serrations. Two distinct types of dynamics are detected in these two alloy samples. The stress-strain curve corresponding to the less ductile Zr65Cu15Ni10Al10 alloy is shown to exhibit a finite correlation dimension and a positive Lyapunov exponent, suggesting that the underlying dynamics is chaotic. In contrast, for the more ductile Cu47.5Zr47.5Al5 alloy, the distributions of stress drop magnitudes and their time durations obey a power-law scaling reminiscent of a self-organized critical state. The exponents also satisfy the scaling relation compatible with self-organized criticality. Possible physical mechanisms contributing to the two distinct dynamic regimes are discussed by drawing on the analogy with the serrated yielding of crystalline samples. The analysis, together with some physical reasoning, suggests that plasticity in the less ductile sample can be attributed to stick-slip of a single shear band, while that of the more ductile sample could be attributed to the simultaneous nucleation of a large number of shear bands and their mutual interactions. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Role of PbO in lithium ion transport in Li2O-PbO-B2O3 glasses

Abstract: A wide range of compositions of grasses in the ternary Li2O-PbO-B2O3 glass system was prepared, and de and ac conductivity measurements were carried out on these glasses. The presence of lead leads to a decrease in de conductivities and an increase in the activation energies. This is likely to be due to the increase of the partial charges on the oxygen atoms and to the presence of the lone pair on the Pb atom; both of these factors impede lithium ion motion. The ac conductivity and dielectric behavior of these glasses support such a conjecture. (C) 2000 Elsevier Science Ltd.

Structural dielectric and optical properties of SrB4O7-BaO-TiO2 glasses

Glass samples with compositions (100-2x)SrB4O7-xBaO-xTiO(2) (10 less than or equal to x less than or equal to 40) were prepared by conventional melt quenching and the influence of the addition of BaO-TiO2 on the structural, dielectric and optical properties of SBO glasses was studied The molar volume, glass transition temperature and the optical polarisability of the glass samples were found to decrease with increase in BaO-TiO2 content while the refractive index and optical band gap increase with increase in BaO-TiO2 content.