A simple numerical method for three-dimensional analysis of simple expansion chamber mufflers of rectangular as well as circular cross-section with a stationary medium

Three-dimensional effects are a primary source of discrepancy between the measured values of automotive muffler performance and those predicted by the plane wave theory at higher frequencies. The basically exact method of (truncated) eigenfunction expansions for simple expansion chambers involves very complicated algebra, and the numerical finite element method requires large computation time and core storage. A simple numerical method is presented in this paper. It makes use of compatibility conditions for acoustic pressure and particle velocity at a number of equally spaced points in the planes of the junctions (or area discontinuities) to generate the required number of algebraic equations for evaluation of the relative amplitudes of the various modes (eigenfunctions), the total number of which is proportional to the area ratio. The method is demonstrated for evaluation of the four-pole parameters of rigid-walled, simple expansion chambers of rectangular as well as circular cross-section for the case of a stationary medium. Computed values of transmission loss are compared with those computed by means of the plane wave theory, in order to highlight the onset (cutting-on) of various higher order modes and the effect thereof on transmission loss of the muffler. These are also compared with predictions of the finite element methods (FEM) and the exact methods involving eigenfunction expansions, in order to demonstrate the accuracy of the simple method presented here.

Role of the cesium antimonide layer in the Na2KSb/Cs3Sb photocathode

When radiation of sufficiently high energy is incident on the surface of a semiconductor photocathode, electrons are excited from the valence band to the conduction band and these may contribute to the photocurrent. The photocurrent in a single-layer cathode is found to be small, because of collisions within the cathode material, the electron affinity condition, etc. It is observed that when a thin layer of n-type cesium antimonide (Cs3Sb) is deposited over a p-type layer of sodium potassium antimonide (Na2KSb), there occurs a sharp rise in the photocurrent. The causes for the dramatic increase in the photocurrent obtainable from a sodium potassium antimonide cathode, by depositing a thin layer of cesium antimonide are analyzed in this article. It has been shown that the interface between sodium potassium antimonide and cesium antimonide can result in lowering of the electron affinity to a level below the bottom of the conduction band of sodium potassium antimonide. The drift field that arises at the heterointerface enables the electrons to reach the surface, leading to the emission of almost all the photogenerated electrons within the cathode. The processes involved in photoemission from such a double-layer cathode are examined from a theoretical point of view. The spectral response of the two-layer cathode is also found to be better than that of a single-layer cathode.

The fluorescence of Nd3+ in lead borate and bismuth borate glasses with large stimulated emission cross section

The stimulated emission cross section σp for the 1060 nm transition of Nd3+ in lead borate and bismuth borate glasses has been determined from fluorescence measurements. The compositional dependence of σp, which has been evaluated using radiative transition probability, refractive index of the host glass, effective fluorescence linewidth, and position of the band, with PbO/Bi2O3 content is investigated. The σp values of the 1060 nm band of Nd3+ for lead borate and bismuth borate glasses are found to be in the range 2.6–5.7×10−20 cm2 at 298 K and 3.0–6.3×10−20 cm2 at 4.2 K. The σp values are comparatively large suggesting the possible utilization of these materials in laser applications.

Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films

A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole–Frenkel conduction mechanism.

A deep‐level spectroscopic technique for determining capture cross‐section activation energy of Si‐related DX centers in AlxGa1-xAs

A deep‐level transient spectroscopy (DLTS) technique is reported for determining the capture cross‐section activation energy directly. Conventionally, the capture activation energy is obtained from the temperature dependence of the capture cross section. Capture cross‐section measurement is often very doubtful due to many intrinsic errors and is more critical for nonexponential capture kinetics. The essence of this technique is to use an emission pulse to allow the defects to emit electrons and the transient signal from capture process due to a large capture barrier was analyzed, in contrast with the emission signal in conventional DLTS. This technique has been applied for determining the capture barrier for silicon‐related DX centers in AlxGa1−xAs for different AlAs mole fractions.

Usefulness of in Situ Single Crystal to Single Crystal Transformation (SCSC) Studies in Understanding the Temperature-Dependent Dimensionality Cross-over and Structural Reorganization in Copper-Containing Metal-Organic Frameworks (MOFs)

Two copper-containing compounds [Cu(3)(mu(3)-OH)(2)-(H(2)O)(2){(SO(3))-C(6)H(3)-(COO)(2)}(CH(3)COO)] , I, and [Cu(5)(mu(3)-OH)(2)(H(2)O)(6){(NO(2))-C(6)H(3)-(COO)(2)}(4)]center dot 5H(2)O, II, were prepared using sulphoisophthalic and nitroisophthalic acids. The removal of the coordinated water molecules in the compounds was investigated using in situ single crystal to single crystal (SCSC) transformation studies, temperature-dependent powder X-ray diffraction (PXRD), and thermogravimetric analysis (TGA). The efficacy of SCSC transformation studies were established by the observation of dimensionality cross-over from a two-dimensional (I) to a three-dimensional structure, Cu(6)(mu(3)-OH)(4){(SO(3))-C(6)H(3)-(COO)(2)}(2)(CH(3)COO)(2), Ia, during the removal of the coordinated water molecules. Compound H exhibited a structural reorganization forming Cu(5)(mu(2)-OH)(2){(NO(2))C(6)H(3)-(COO)(2))(4)], Ha, possessing trimeric (Cu(3)O(12)) and dimeric (Cu(2)O(8)) copper clusters. The PXRD studies indicate that the three-dimensional structure (Ia) is transient and unstable, reverting back to the more stable two-dimensional structure (I) on cooling to room temperature. Compound Ha appears to be more stable at room temperature. The rehydration/dehydration studies using a modified TGA setup suggest complete rehydration of the water molecules, indicating that the water molecules in both compounds are labile. A possible model for the observed changes in the structures has been proposed. Magnetic studies indicate changes in the exchanges between the copper centers in Ha, whereas no such behavior was observed in Ia.

The influence of Zr layer thickness on contact deformation and fracture in a ZrN-Zr multilayer coating

In order to understand the influence of ductile metal interlayer on the overall deformation behavior of metal/nitride multilayer, different configurations of metal and nitride layers were deposited and tested under indentation loading. To provide insight into the trends in deformation with multilayer spacings, an FEM model with elastic-perfect plastic metal layers alternate with an elastic nitride on top of an elastic-plastic substrate. The strong strain mismatch between the metal and nitride layers significantly alters the stress field under contact loading leading to micro-cracking in the nitride, large tensile stresses immediately below the contact, and a transition from columnar sliding in thin metal films to a more uniform bending and microcracking in thicker coatings.

C-H functionalization of tertiary amines by cross dehydrogenative coupling reactions: solvent-free synthesis of alpha-aminonitriles and beta-nitroamines under aerobic condition

A solvent-free synthesis of alpha-aminonitriles and beta-nitroamines by oxidative cross-dehydrogenative coupling under aerobic condition is reported. A catalytic amount of molybdenum(VI) acetylacetonoate was found to catalyze cyanation of tertiary amines to form alpha-aminonitriles, whereas vanadium pentoxide was found to promote aza-Henry reaction to furnish beta-nitroamines. Both of these environmentally benign reactions are performed in the absence of solvents using molecular oxygen as an oxidant.

Atomic layer deposition of ZrO2 thin films: Study of growth kinetics and dielectric behaviour

Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic complexes of Zr as precursors. These films are characterized by X-ray diffraction, transmission and scanning electron microscopies, infrared spectroscopy, and electrical measurements. These show that amorphous ZrO2 films of high dielectric quality may be grown on Si(100) starting about 400degreesC. As the growth temperature is raised, the films become crystalline, the phase formed and the microstructure depending on precursor molecular structure. The phase of ZrO2 formed depends also on the relative duration of the precursor and oxygen pulses. XPS and IR spectroscopy show that films grown at low temperatures contain chemically unbound carbon, its extent depending on the precursor. C-V measurements show that films grown on Si(100) have low interface state density, low leakage current, a hysteresis width of only 10-250 mV and a dielectric constant of similar to16-25.

Performance analysis of UDP with energy efficient link layer on Markov fading channels

In this paper, we analyze the throughput and energy efficiency performance of user datagram protocol (UDP) using linear, binary exponential, and geometric backoff algorithms at the link layer (LL) on point-to-point wireless fading links. Using a first-order Markov chain representation of the packet success/failure process on fading channels, we derive analytical expressions for throughput and energy efficiency of UDP/LL with and without LL backoff. The analytical results are verified through simulations. We also evaluate the mean delay and delay variation of voice packets and energy efficiency performance over a wireless link that uses UDP for transport of voice packets and the proposed backoff algorithms at the LL. We show that the proposed LL backoff algorithms achieve energy efficiency improvement of the order of 2-3 dB compared to LL with no backoff, without compromising much on the throughput and delay performance at the UDP layer. Such energy savings through protocol means will improve the battery life in wireless mobile terminals.

Growth of rutile TiO2 nanorods on TiO2 seed layer deposited by electron beam evaporation

Dense rutile TiO2 nanorods were grown on anatase TiO2 seed layer coated glass substrate by solution technique. The crystalline nature of nanorods has confirmed by transmission electron microscopy. The band gap of the TiO2 seed layer and nanorods were calculated using the UV-vis absorption spectrum and the band gap value of the anatase seed layer and rutile nanorods were 3.39 eV and 3.09 eV respectively. Water contact angle measurements were also made and showed that the contact angle of rutile nanorods was (134 degrees) larger than the seed layer contact angle (93 degrees). The RMS surface roughness of the TiO2 seed layer (0.384 nm) and nanorods film (18.5 nm) were measured by an atomic force microscope and correlated with their contact angle values. (C) 2011 Elsevier B.V. All rights reserved.

Exciting forces due to interaction of water waves with a submerged sphere in an ice-covered two-layer fluid of finite depth

Scattering of water waves by a sphere in a two-layer fluid, where the upper layer has an ice-cover modelled as an elastic plate of very small thickness, while the lower one has a rigid horizontal bottom surface, is investigated within the framework of linearized water wave theory. The effects of surface tension at the surface of separation is neglected. There exist two modes of time-harmonic waves - the one with lower wave number propagating along the ice-cover and the one with higher wave number along the interface. Method of multipole expansions is used to find the particular solution for the problem of wave scattering by a submerged sphere placed in either of the layers. The exciting forces for vertical and horizontal directions are derived and plotted against different values of the wave number for different submersion depths of the sphere and flexural rigidity of the ice-cover. When the flexural rigidity and the density of the ice-cover are taken to be zero, the numerical results for the exciting forces for the problem with free surface are recovered as particular cases. (C) 2011 Elsevier Ltd. All rights reserved.

Molecular charge-transfer interaction with single-layer graphene

While the effect of electrochemical doping on single-layer graphene (SG) with holes and electrons has been investigated, the effect of charge-transfer doping on SG has not been examined hitherto. Effects of varying the concentration of electron donor and acceptor molecules such as tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE) on SG produced by mechanical exfoliation as well as by the reduction of single-layer graphene oxide have been investigated. TTF softens the G-band in the Raman spectrum, whereas TCNE stiffens the G-band. The full-width-at-half-maximum of the G-band increases on interaction with both TTF and TCNE. These effects are similar to those found with few-layer graphene, but in contrast to those found with electrochemical doping. A common feature between the two types of doping is found in the case of the 2-D band, which shows softening and stiffening on electron and hole doping, respectively. The experimental results are explained on the basis of the frequency shifts, electron-phonon coupling and structural inhomogeneities that are relevant to molecule-graphene interaction.

Radiative effects of elevated aerosol layer in Central Himalayas

Systematic observations of light detection and ranging (LIDAR) to detect elevated aerosol layer were carried out at Manora Peak (29.4 degrees N, 79.5 degrees E, similar to 1960 m a.s.l), Nainital, in the Central Himalayas during January-May 2008. In spite of being a remote, high-altitude site, an elevated aerosol layer is observed quite frequently in the altitude range of 2460-4460 m a.s.l with a width of similar to 2 km during the observation period. We compare these profiles with the vertical profiles observed over Gadanki (13.5 degrees N, 79.2 degrees E, similar to 370 m a.s.l), a tropical station, where no such elevated aerosol layer was found. Further, there is a steady increase in aerosol optical depth (AOD) from January (winter) to May (summer) from 0.043 to 0.742, respectively, at Manora Peak, indicating aerosol loading in the atmosphere. Our observations show north-westerly winds indicating the convective lifting of aerosols from far-off regions followed by horizontal long-range transport. The presence of strongly absorbing and scattering aerosols in the elevated layer resulted in a relatively large diurnal mean aerosol surface radiative forcing efficiency (forcing per unit optical depth) of about -65 and -63 W m(-2) and the corresponding mean reduction in the observed net solar flux at the surface (cooling effect) is as high as -22 and -30 W m(-2). The reduction of radiation will heat the lower atmosphere by redistributing the radiation with heating rate of 1.13 and 1.31 K day(-1) for April and May 2008, respectively, in the lower atmosphere.