Deformation field in indentation of a granular ensemble

An experimental study has been made of the flow field in indentation of a model granular material. A granular ensemble composed of spherical sand particles with average size of 0.4 mm is indented with a flat ended punch under plane-strain conditions. The region around the indenter is imaged in situ using a high-speed charge-coupled device (CCD) imaging system. By applying a hybrid image analysis technique to image sequences of the indentation, flow parameters such as velocity, velocity gradient, and strain rate are measured at high resolution. The measurements have enabled characterization of the main features of the flow such as dead material zones, velocity jumps, localization of deformation, and regions of highly rotational flow resembling vortices. Implications for validation of theoretical analyses and applications are discussed.

Bose-Hubbard models in confining potentials: Inhomogeneous mean-field theory

We present an extensive study of Mott insulator (MI) and superfluid (SF) shells in Bose-Hubbard (BH) models for bosons in optical lattices with harmonic traps. For this we apply the inhomogeneous mean-field theory developed by Sheshadri et al. Phys. Rev. Lett. 75, 4075 (1995)]. Our results for the BH model with one type of spinless bosons agree quantitatively with quantum Monte Carlo simulations. Our approach is numerically less intensive than such simulations, so we are able to perform calculations on experimentally realistic, large three-dimensional systems, explore a wide range of parameter values, and make direct contact with a variety of experimental measurements. We also extend our inhomogeneous mean-field theory to study BH models with harmonic traps and (a) two species of bosons or (b) spin-1 bosons. With two species of bosons, we obtain rich phase diagrams with a variety of SF and MI phases and associated shells when we include a quadratic confining potential. For the spin-1 BH model, we show, in a representative case, that the system can display alternating shells of polar SF and MI phases, and we make interesting predictions for experiments in such systems.

Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

Unsteady Rotating Flow Over an Impulsively Rotating Infinite Disk with Axial Magnetic Field and Suction

The unsteady rotating flow of an incompressible laminar viscous electrically conducting fluid over an impulsively rotated infinite disk in the presence of magnetic field and suction is investigated. We have considered the situation where there is a steady state initially (i.e., at t = 0, the fluid is rotating with constant angular velocity over a stationary disk). Then at t > 0, the disk is suddenly rotated with a constant angular velocity either in the same direction or in opposite direction to that of the fluid rotation which causes unsteadiness in the flow field. The effect of the impulsive motion is found to be more pronounced on the tangential shear stress than on the radial shear stress. When the disk and the fluid rotate in the same direction, the tangential shear stress at the surface changes sign in a small time interval immediately after the start of the impulsive motion.

Magnetic-field-induced Fabry-Perot resonances in helical edge states

We study electronic transport across a helical edge state exposed to a uniform magnetic ((B) over right arrow) field over a finite length. We show that this system exhibits Fabry-Perot-type resonances in electronic transport. The intrinsic spin anisotropy of the helical edge states allows us to tune these resonances by changing the direction of the (B) over right arrow field while keeping its magnitude constant. This is in sharp contrast to the case of nonhelical one-dimensional electron gases with a parabolic dispersion, where similar resonances do appear in individual spin channels (up arrow and down arrow) separately which, however, cannot be tuned by merely changing the direction of the (B) over right arrow field. These resonances provide a unique way to probe the helical nature of the theory. We study the robustness of these resonances against a possible static impurity in the channel.

High field carrier transport in graphene: Insights from fast current transient

In this work, we observe gate tunable negative differential conductance (NDC) and current saturation in single layer and bilayer graphene transistor at high source-drain field, which arise due to the interplay among (1) self-heating, (2) hot carrier injection, and (3) drain induced minority carrier injection. The magnitude of the NDC is found to be reduced for a bilayer, in agreement with its weaker carrier-optical phonon coupling and less efficient hot carrier injection. The contributions of different mechanisms to the observed results are decoupled through fast transient measurements with nanosecond resolution. The findings provide insights into high field transport in graphene. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4754103]

Efficient field emission properties of ZnO (core)/graphite (shell) nanowires

In this work the field emission studies of a new type of field emitter, zinc oxide (ZnO) core/graphitic (g-C) shell nanowires are presented. The nanowires are synthesized by chemical vapor deposition of zinc acetate at 1300 degrees C Scanning and transmission electron microscopy characterization confirm high aspect ratio and novel core-shell morphology of the nanowires. Raman spectrum of the nanowires mat represents the characteristic Raman modes from g-C shell as well as from the ZnO core. A low turn on field of 2.75 V/mu m and a high current density of 1.0 mA/cm(2) at 4.5 V/mu m for ZnO/g-C nanowires ensure the superior field emission behavior compared to the bare ZnO nanowires. (C) 2012 Elsevier B.V. All rights reserved.

Diketopyrrolopyrrole-Diketopyrrolopyrrole-Based Conjugated Copolymer for High-Mobility Organic Field-Effect Transistors

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to similar to 1100 nm) and field-effect electron mobility values of >1 cm(2) V-1 s(-1). The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics.

A new diketopyrrolopyrrole-based co-polymer for ambipolar field-effect transistors and solar cells

A new thieno3,2-b]thiophenediketopyrrolopyrrole-benzo1,2-b:4,5-b']dithio phene based narrow optical gap co-polymer (PTTDPP-BDT) has been synthesized and characterized for field-effect transistors and solar cells. In field-effect transistors the polymer exhibited ambipolar charge transport behaviour with maximum hole and electron mobilities of 10(-3) cm(2) V-1 s(-1) and 10(-5) cm(2)V(-1) s(-1), respectively. The respectable charge transporting properties of the polymer were consistent with X-ray diffraction measurements that showed close molecular packing in the solid state. The difference in hole and electron mobilities was explained by density functional theory calculations, which showed that the highest occupied molecular orbital was delocalized along the polymer backbone with the lowest unoccupied molecular orbital localized on the bis(thieno3,2-b]thiophene)diketopyrrolopyrrole units. Bulk heterojunction photovoltaic devices with the fullerene acceptor PC70BM were fabricated and delivered a maximum conversion efficiency of 3.3% under AM1.5G illumination. (C) 2012 Elsevier B.V. All rights reserved.

Spreading and atomization of droplets on a vibrating surface in a standing pressure field

We report the first observation and analytical model of deformation and spreading of droplets on a vibrating surface under the influence of an ultrasonic standing pressure field. The standing wave allows the droplet to spread, and the spreading rate varies inversely with viscosity. In low viscosity droplets, the synergistic effect of radial acoustic force and the transducer surface acceleration also leads to capillary waves. These unstable capillary modes grow to cause ultimate disintegration into daughter droplets. We find that using nanosuspensions, spreading and disintegration can be prevented by suppressing the development of capillary modes and subsequent break-up. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757567]

Electric-field-driven monoclinic-to-rhombohedral transformation in Na1/2Bi1/2TiO3

The lead free ferroelectric Na1/2Bi1/2TiO3 (NBT) is shown to exhibit electric-field-induced monoclinic (Cc) to rhombohedral (R3c) phase transformation at room temperature. This phenomenon has been analyzed both from the viewpoint of the intrinsic polarization rotation and adaptive phase models. In analogy with the morphotropic phase boundary systems, NBT seems to possess intrinsic competing ferroelectric instabilities near room temperature.

Time evolution of resistance in response to magnetic field: Evidence of glassy transport in La0.85Sr0.15CoO3

We demonstrate the distinct glassy transport phenomena associated with the phase separated and spin-glass-like phases of La0.85Sr0.15CoO3, prepared under different heat-treatment conditions. The low-temperature annealed (phase-separated) sample, exhibits a small change in resistance, with evolution of time, as compared to the high-temperature annealed (spin glass) one. However, the resistance change as a function of time, in both cases, is well described by a stretched exponential fit, signifying the slow dynamics. Moreover, the ultraviolet spectroscopy study evidences a relatively higher density of states in the vicinity of EF for low-temperature annealed sample and this correctly points to its less semiconducting behavior.

Potential and electric field distribution in a ceramic disc insulator string with faulty insulators

Ceramic/Porcelain suspension disc insulators are widely used in power systems to provide electrical insulation and mechanically support for high-voltage transmission lines. These insulators are subjected to a variety of stresses, including mechanical, electrical and environmental. These stresses act in unison. The exact nature and magnitude of these stresses vary significantly and depends on insulator design, application and its location. Due to various reasons the insulator disc can lose its electrical insulation properties without any noticeable mechanical failure. Such a condition while difficult to recognize, can enhance the stress on remaining healthy insulator discs in the string further may lead to a flashover. To understand the stress enhancement due to faulty discs in a string, attempt has been made to simulate the potential and electric field profiles for various disc insulators presently used in the country. The results of potential and electric filed stress obtained for normal and strings with faulty insulator discs are presented.

Coupled polynomial field approach for elimination of flexure and torsion locking phenomena in the Timoshenko and Euler-Bernoulli curved beam elements

The curvature related locking phenomena in the out-of-plane deformation of Timoshenko and Euler-Bernoulli curved beam elements are demonstrated and a novel approach is proposed to circumvent them. Both flexure and Torsion locking phenomena are noticed in Timoshenko beam and torsion locking phenomenon alone in Euler-Bernoulli beam. Two locking-free curved beam finite element models are developed using coupled polynomial displacement field interpolations to eliminate these locking effects. The coupled polynomial interpolation fields are derived independently for Timoshenko and Euler-Bernoulli beam elements using the governing equations. The presented of penalty terms in the couple displacement fields incorporates the flexure-torsion coupling and flexure-shear coupling effects in an approximate manner and produce no spurious constraints in the extreme geometric limits of flexure, torsion and shear stiffness. the proposed couple polynomial finite element models, as special cases, reduce to the conventional Timoshenko beam element and Euler-Bernoulli beam element, respectively. These models are shown to perform consistently over a wide range of flexure-to-shear (EI/GA) and flexure-to-torsion (EI/GJ) stiffness ratios and are inherently devoid of flexure, torsion and shear locking phenomena. The efficacy, accuracy and reliability of the proposed models to straight and curved beam applications are demonstrated through numerical examples. (C) 2012 Elsevier B.V. All rights reserved.