Conductivity and structural studies on disordered amorphous conducting carbon films

Amorphous carbon films are prepared by the pyrolysis of Tetra Chloro Phthalic Anhydride (TCPA) at different temperatures (700 degrees C to 900 degrees C). DC Conductivity measurements are done on the films in the temperature range 300K to 4.2K. It shows an activated temperature dependence with a small activation energy (0.02eV to 0.003eV). Variable range hopping is observed at low temperatures. The films are characterised by XRD, SEM, TEM, AFM and microRaman. The electronic structure of the film is used to explain the electrical behaviour.

Sputter deposited LiPON thin films from powder target as electrolyte for thin film battery applications

Lithium phosphorus oxynitride (LiPON) thin films as solid electrolytes were prepared by reactive radio frequency (rf) magnetron sputtering from Li3PO4 powder compact target. High deposition rates and ease of manufacturing powder target compared with conventional ceramic Li3PO4 targets offer flexibility in handling and reduce the cost associated. Rf power density varied from 1.7 Wcm(-2) to 3 Wcm(-2) and N-2 flow from 10 to 30 sccm for a fixed substrate to target distance of 4 cm for best ionic conductivity. The surface chemical analysis done by X-ray photoelectron spectroscopy showed incorporation of nitrogen into the film as both triply, NE and doubly. Nd coordinated form. With increased presence of NE, ionic conductivity of LiPON was found to be increasing. The electrochemical impedance spectroscopy of LiPON films confirmed an ionic conductivity of 1.1 x 10(-6) Scm(-1) for optimum rf power and N-2 flow conditions. (C) 2011 Elsevier B.V. All rights reserved.

Blind separation of multiple co-channel BPSK signals arriving at an antenna array

In this letter, we propose a method for blind separation of d co-channel BPSK signals arriving at an antenna array. Our method involves two steps. In the first step, the received data vectors at the output of the array is grouped into 2d clusters. In the second step, we assign the 2d d-tuples with ±1 elements to these clusters in a consistent fashion. From the knowledge of the cluster to which a data vector belongs, we estimate the bits transmitted at that instant. Computer simulations are used to study the performance of our method

Buckling patterns in diamond-like carbon films

An optical microscopy study of stress relief patterns in diamond-like carbon films is presented. Interesting stress relief patterns are observed which include the well-known sinusoidal type, branching pattern and string-of-beads pattern. The last one is shown to relieve stresses under marginal conditions. Two new stress relief patterns are noted in the present study. One of them is of sinusoidal shape with two extra branches at every peak position. The distribution of different stress relief forms from the outer edge of the films towards the interior is markedly dependent on the film thickness. Our new patterns support the approach in which the stress relief forms have been analysed earlier using the theory of plate buckling.

Metal-insulator transition and giant magnetoresistance in La1-xMnO3-delta thin films and superlattices

The first fabrication of self-doped La1-xMnO3-delta films which are unique among the other La(1-x)M(x)MnO(3) (M = Ca, Ba and Pb) thin films showing giant magnetoresistance is reported. Ag-doped La0.7MnO3-delta films were grown on LaAlO3[100] substrates. These films show ferromagnetic and metal-insulator transition at 220 K and exhibit giant magnetoresistance (GMR) with Delta R/R(o) = 85% and Delta R/R(H) > 550%. Without silver addition these self-doped films are non-magnetic, Enhancement in GMR up to 8% has been observed in superlattices having alternate magnetic and non-magnetic La1-xMnO3-delta layers.

Structural, optical and EPR studies on ZnO:Cu nanopowders prepared via low temperature solution combustion synthesis

Cu (0.1 mol%) doped ZnO nanopowders have been successfully synthesized by a wet chemical method at a relatively low temperature (300 degrees C). Powder X-ray diffraction (PXRD) analysis, scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Fourier transformed infrared (FTIR) spectroscopy, UV-Visible spectroscopy, Photoluminescence (PL) and Electron Paramagnetic Resonance (EPR) measurements were used for characterization. PXRD results confirm that the nanopowders exhibit hexagonal wurtzite structure of ZnO without any secondary phase. The particle size of as-formed product has been calculated by Williamson-Hall (W-H) plots and Scherrer's formula is found to be in the range of similar to 40 nm. TEM image confirms the nano size crystalline nature of Cu doped ZnO. SEM micrographs of undoped and Cu doped ZnO show highly porous with large voids. UV-Vis spectrum showed a red shift in the absorption edge in Cu doped ZnO. PL spectra show prominent peaks corresponding to near band edge UV emission and defect related green emission in the visible region at room temperature and their possible mechanisms have been discussed. The EPR spectrum exhibits a broad resonance signal at g similar to 2.049, and two narrow resonances one at g similar to 1.990 and other at g similar to 1.950. The broad resonance signal at g similar to 2.049 is a characteristic of Cu2+ ion whereas the signal at g similar to 1.990 and g similar to 1.950 can be attributed to ionized oxygen vacancies and shallow donors respectively. The spin concentration (N) and paramagnetic susceptibility (X) have been evaluated and discussed. (C) 2011 Elsevier B. V. All rights reserved.

A Comparative Study of Electrical Switching Behavior of Certain Tellurium based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

Structural and optical properties of RF sputtered Bi2VO5.5 thin films

Thin films of Bismuth Vanadate Bi2VO5.5 (BiV) have been deposited on amorphous quartz and polycrystalline silicon substrates by r.f. sputtering technique and characterised for their structural and optical properties. The os-deposited films at room temperature are found to be amorphous and transparent over the spectral range of 0.55 mu m to 12 mu m. Post-deposition annealing at 400 degrees C in air shows the formation of the BiV crystalline phase. The optical constants namely refractive index. extinction coefficient and optical bandgap of both amorphous and crystalline films have been determined. The refractive index of the as-deposited film is around 2.4 at 0.7 mu m and drops to 2.26 at 1.56 mu m. The optical bandgap of the material has been determined from the computed values of the absorption coefficients.

Relationship between nonlinear resistivity and the varistor forming mechanism in ZnO ceramics

The use of a number of perovskite phases M� M�O3-x, as the only forming additive in ZnO ceramics, produces a high nonlinearity index, ?(up to 45), where M� is a multivalent transition?metal ion and M� is an alkaline earth or a rare?earth ion. From this study, the formation parameters crucial to high nonlinearity, such as nonstoichiometry in the as?received ZnO powder, low x values of the additives and fast cooling rate after the sintering, are explainable on the basis of a depletion layer formation at the presintering stage. This is because of the surface states arising out of the chemisorbed oxygen. The depletion layer is retained during sintering as a result of the higher valence state of M� ions, preferentially present at the grain?boundary regions. The fast cooling freezes in the high?temperature concentration of donor?type defects, thereby decreasing the depletion layer width.

Transport properties, structure, and radiation induced defect studies in amorphous carbon films

Amorphous conducting carbon films are prepared by plasma assisted chemical vapour deposition and their d.c. conductivity (similar to 100 Scm(-1)) is studied from 300K down to 4.2K. The films were irradiated by high energy ion beam(I+13, 170 MeV) with a dose of 10(13) ions/cm(2). As a result a marked decrease in conductivity by two to three orders in magnitude was observed. The structural changes and the defects in the films caused by ion irradiation are studied using photoluminescence, persistent photoconductivity, and ESR spectroscopy.

X-ray-reflectivity study of Ge-Si-Ge films

Here we report on an x-ray specular reflectivity study of Ce-Si-Ge trilayers grown on Si(001) single-crystal substrate by ion beam sputtering deposition at various substrate temperatures. The electron-density profile of the trilayer as a function of depth, obtained from x-ray-reflectivity data, reveals an intermixing of Si and Ge. The x-ray-reflectivity data have been analyzed using a scheme based on the distorted-wave Born approximation, and the validity of the analysis scheme was checked using simulated data. Analyzed results provided information regarding interdiffusion in this system. We notice that although the Si-on-Ge interface is sharp, a Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface.

Enhanced magnetoresistance in as?deposited oxygen?deficient La0.6Pb0.4MnO3-y thin films

The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 degrees C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator-metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator-metal transition temperature against the 40% GMR in the case of stoichiometric thin films. (C) 1995 American Institute of Physics.

Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrode

Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450?°C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450?°C on LNO/LAO and LNO/SiO2/Si were 2.5 ?C/cm2, 37 kV/cm and 4.6?C/cm2, 93 kV/cm, respectively. © 1995 American Institute of Physics.

Orientational disorder and other aspects of C70 and C60-C70 films deposited on single-crystal substrates

C-70 films deposited on highly oriented pyrolytic graphite (HOPG), Ag(110), Ag(111) and Pt(110) substrates have been investigated by scanning tunnelling microscopy. Interesting observations on novel molecular arrangements, as well as orientational disorder, are presented. Solid solutions of C-60 and C-70 show interesting packing of these molecules when deposited on HOPG.