Performance analysis of FSO links under strong atmospheric turbulence conditions using various modulation schemes

Strong atmospheric turbulence is a major hindrance in wireless optical communication systems. In this paper, the performance of a wireless optical communication system is analyzed using different modulation formats such as, binary phase shift keying-subcarrier intensity modulation (BPSK-SIM), differential phase shift keying (DPSK), differential phase shift keying-subcarrier intensity modulation (DPSK-SIM), Mary pulse position modulation (M-PPM) and polarization shift keying (PoISK). The atmospheric channel is modeled for strong atmospheric turbulences with combined effect of turbulence and pointing errors. Novel closed-form analytical expressions for average bit error rate (BER), channel capacity and outage probability for the various modulation techniques, viz. BPSK-SIM, DPSK, DPSK-SIM, PoISK and M-PPM are derived. The simulated results for BER, channel capacity and outage probability of various modulation techniques are plotted and analyzed. (C) 2014 Elsevier GmbH. All rights reserved.

Optical and structural properties of highly porous shell structured Fe doped TiO2 thin films

TiO2 thin films with 0.2 wt%, 0.4 wt%, 0.6 wt%, and 0.8 wt% Fe were prepared on glass and silicon substrates using sol-gel spin coating technique. The optical cut-off points are increasingly red-shifted and the absorption edge is shifted over the higher wavelength region with Fe content increasing. As Fe content increases, the optical band gap decreases from 3.03 to 2.48 eV whereas the tail width increases from 0.26 to 1.43 eV. The X-ray diffraction (XRD) patterns for doped films at 0.2 wt% and 0.8 wt% Fe reveal no characteristic peaks, indicating that the film is amorphous whereas undoped TiO2 exhibits (101) orientation with anatase phase. Thin films of higher Fe content exhibit a homogeneous, uniform, and nano-structured highly porous shell morphology.

Exploiting oriented attachment in stabilizing La3+-doped gallium oxide nano-spindles

Retaining the morphology of gallium oxide nanostructures during structural transformations or after doping with lanthanide ions is not facile. Here we report on the sonochemical synthesis of nearly monodisperse similar to 550 nm long nano-spindles of undoped and La-doped alpha-GaOOH. The transformation of as-prepared undoped and La-doped alpha-GaOOH powders into the corresponding undoped and La-doped Ga2O3 phases (alpha and beta) was achieved by carrying out controlled annealing at elevated temperatures under optimized conditions. The formation of gallium oxide nano-spindles is explained by invoking the phenomenon of oriented attachment, as amply supported by electron microscopy. Interestingly, the morphology of the gallium oxide nano-spindles remained conserved even after doping them with more than 1.4 at% of La3+ ions. Such robust structural stability could be attributed to the oriented attachment-type growth observed in the nano-spindles. The as-prepared samples and the corresponding annealed ones were thoroughly characterized by powder X-ray diffraction (PXRD), electron microscopy (SEM, TEM, and STEM-EDS) and X-ray photoelectron spectroscopy (XPS). Finally, photoluminescence from the single-crystalline undoped and La-doped beta-Ga2O3 was explored.

Space vector based modulation scheme for reducing capacitor RMS current in three-level diode-clamped inverter

The DC capacitor is an important component in a voltage source inverter.The RMS current flowing through the capacitor determines the capacitor size and losses. The losses, in turn, influence the capacitor life. This paper proposes a space vector based modulation strategy for reducing the capacitor RMS current in a three-level diode-clamped inverter. An analytical closed-form expression is derived for the DC capacitor RMS current with the proposed PWM strategy. The analytical expression is validated through simulations and also experimentally. Theoretical and experimental results are presented, comparing the proposed strategy with conventional space vector PWM (CSVPWM). It is shown that the proposed strategy reduces the capacitor RMS current significantly at high modulation indices and high power factors. (C) 2014 Elsevier B.V. All rights reserved.

Comparison of the photocatalytic degradation of trypan blue by undoped and silver-doped zinc oxide nanoparticles

Zinc oxide (ZnO) and silver doped zinc oxide (ZnO:Ag) nanoparticles were prepared using nitrates of zinc and silver as oxidizers and ethylene diaminetetraacetic acid (EDTA) as a fuel via low-temperature combustion synthesis (LCS) at 500 degrees C. X-ray diffraction (XRD) pattern indicates the presence of silver in the hexagonal wurtzite structure of ZnO. Fourier transform infrared (FTIR) spectrum indicates the presence of Ag-Zn-O stretching vibration at 510 cm(-1). Transmission electron microscopy (TEM) images shows that the average particle size of ZnO and ZnO:Ag nanoparticles were found to be 58 nm and 52 nm, respectively. X-ray photoelectron spectroscopy (XPS) data clearly indicates the presence of Ag in ZnO crystal lattice. The above characterization techniques indicate that the incorporation of silver affects the structural and optical properties of ZnO nanoparticles. ZnO:Ag nanoparticles exhibited 3% higher photocatalytic efficiency than pure ZnO nanoparticles. ZnO:Ag nanoparticles show better photocatalytic activity for the degradation of trypan blue (TrB) compared to undoped ZnO nanoparticles. (C) 2014 Elsevier Ltd. All rights reserved.

Field dependent and disorder-induced nonlinear charge transport in electrochemically doped polypyrrole devices

Electric field activated charge transport is studied in the metal/polymer/metal device structure of electropolymerized polypyrrole down to 10 K with varying carrier density and disorder. Disorder induced nonlinear behaviour is observed in polypyrrole devices grown at room temperature which is correlated to delocalization of states. The slope parameter of currentvoltage characteristics (in log-log scale) increases as the temperature decreases, which indicates the onset of stronger field dependence. The field dependence of mobility becomes dominant as the carrier density decreases. The sharp dip in differential conductance indicates the localization of carriers at low temperatures which reduces the effective number of carriers involved in the transport.

Analytical evaluation of harmonic distortion factor corresponding to generalised advanced bus-clamping pulse width modulation

A few advanced bus-clamping pulse width modulation (ABCPWM) methods have been proposed recently for a three-phase inverter. With these methods, each phase is clamped, switched at nominal frequency, and switched at twice the nominal frequency in different regions of the fundamental cycle. This study proposes a generalised ABCPWM scheme, encompassing the few ABCPWM schemes that have been proposed and many more ABCPWM schemes that have not been reported yet. Furthermore, analytical closed-form expression is derived for the harmonic distortion factor corresponding to the generalised ABCPWM. This factor is independent of load parameters. The analytical expression derived here brings out the dependence of root-mean-square (RMS) current ripple on modulation index, and can be used to evaluate the RMS current ripple corresponding to any ABCPWM scheme. The analytical closed-form expression is validated experimentally in terms of measured weighted total harmonic distortion (THD) in line voltage (V-WTHD) and measured THD in line current (I-THD) on a 6 kW induction motor drive.

Structural, Magnetic, and Electrical Properties of Microwave-Sintered Cr3+-Doped Sr Hexaferrites

SrCrxFe12-xO19 (x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.9) hexaferrites were prepared by a microwave-hydrothermal method and subsequently sintered at 950 degrees C for 90 min using the microwave sintering method. The results show that, with increasing Cr3+ content, the lattice parameters changed anisotropically. The average grain sizes of sintered samples were in the range of 280 nm to 660 nm. The saturation magnetization systematically decreased with increasing Cr3+ doping, but the coercivity values increased. The electrical resistivity (log rho) decreased linearly with increasing temperature up to a certain temperature known as the transition temperature (T-c), and T-c decreased with further increase (x>0.5) of the Cr3+ content. This decrease in log rho and the activation energy (E-g) is due to electron hopping and occupancy of doped ions at different lattice sites. We found that the dielectric constant and dielectric loss for all the samples decreased with the Cr3+ content. The structural, magnetic, and electrical properties of Cr3+-doped SrFe12O19 hexaferrites have thus been investigated.

Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys

Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl structure around 150 degrees C and then to a stable hexagonal structure at high temperatures (>= 250 degrees C). It has been generally understood that the phase change takes place between amorphous and the metastable NaCl structure and not between the amorphous and the stable hexagonal phase. In the present work, it is observed that the thermally evaporated (GST)(1-x)Se-x thin films (0 <= x <= 0.50) crystallize directly to the stable hexagonal structure for x >= 0.10, when annealed at temperatures >= 150 degrees C. The intermediate NaCl structure has been observed only for x, 0.10. Chemically ordered network of GST is largely modified for x >= 0.10. Resistance, thermal stability and threshold voltage of the films are found to increase with the increase of Se. The contrast in electrical resistivity between the amorphous and crystalline phases is about 6 orders of magnitude. The increase in Se shifts the absorption edge to lower wavelength and the band gap widens from 0.63 to 1.05 eV. Higher resistance ratio, higher crystallization temperature, direct transition to the stable phase indicate that (GST)(1-x)Se-x films are better candidates for phase change memory applications.

An insight to the low temperature conduction mechanism of c-axis grown Al-doped ZnO, a widely used transparent conducting oxide

Al-doped ZnO thin films were synthesized from oxygen reactive co-sputtering of Al and Zn targets. Explicit doping of Al in the highly c-axis oriented crystalline films of ZnO was manifested in terms of structural optical and electrical properties. Electrical conduction with different extent of Al doping into the crystal lattice of ZnO (AZnO) were characterized by frequency dependent (40 Hz-50 MHz) resistance. From the frequency dependent resistance, the ac conduction of them, and correlations of localized charge particles in the crystalline films were studied. The dc conduction at the low frequency region was found to increase from 8.623 mu A to 1.14 mA for the samples AZnO1 (1 wt% Al) and AZnO2 (2 wt% Al), respectively. For the sample AZnO10 (10 wt% Al) low frequency dc conduction was not found due to the electrode polarization effect. The measure of the correlation length by inverse of threshold frequency (omega(0)) showed that on application of a dc electric field such length decreases and the decrease in correlation parameter(s) indicates that the correlation between potentials wells of charge particles decreases for the unidirectional nature of dc bias. The comparison between the correlation length and the extent of correlation in the doped ZnO could not be made due to the observation of several threshold frequencies at the extent of higher doping. Such threshold frequencies were explained by the population possibility of correlated charge carriers that responded at different frequencies. For AZnO2 (2% Al), the temperature dependent (from 4.5 to 288 K) resistance study showed that the variable range hopping mechanism was the most dominating conduction mechanism at higher temperature whereas at low temperature region it was influenced by the small polaronic hopping conduction mechanism. There was no significant influence found in these mechanisms on applications of 1, 2 and 3 V as biases.

Modulation of Electronic and Self-Assembly Properties of a Donor-Acceptor-Donor-Based Molecular Materials via Atomistic Approach

The performance of molecular materials in optoelectronic devices critically depends upon their electronic properties and solid-state structure. In this report, we have synthesized sulfur and selenium based (T4BT and T4BSe) donor-acceptor-donor (D-A-D) organic derivatives in order to understand the structure-property correlation in organic semiconductors by selectively tuning the chalcogen atom. The photophysical properties exhibit a significant alteration upon varying a single atom in the molecular structure. A joint theoretical and experimental investigation suggests that replacing sulfur with selenium significantly reduces the band gap and molar absorption coefficient because of lower electronegativity and ionization potential of selenium. Single-crystal X-ray diffraction analysis showed differences in their solid-state packing and intermolecular interactions. Subsequently, difference in the solid-state packing results variation in self-assembly. Micorstructural changes within these materials are correlated to their electrical resistance variation, investigated by conducting probe atomic force microscopy (CP-AFM) measurements. These results provide useful guidelines to understand the fundamental properties of D-A-D materials prepared by atomistic modulation.

Low frequency modulation of jets in quasigeostrophic turbulence

Quasigeostrophic turbulence on a beta-plane with a finite deformation radius is studied numerically, with particular emphasis on frequency and combined wavenumber-frequency domain analyses. Under suitable conditions, simulations with small-scale random forcing and large-scale drag exhibit a spontaneous formation of multiple zonal jets. The first hint of wave-like features is seen in the distribution of kinetic energy as a function of frequency; specifically, for progressively larger deformation scales, there are systematic departures in the form of isolated peaks (at progressively higher frequencies) from a power-law scaling. Concomitantly, there is an inverse flux of kinetic energy in frequency space which extends to lower frequencies for smaller deformation scales. The identification of these peaks as Rossby waves is made possible by examining the energy spectrum in frequency-zonal wavenumber and frequency-meridional wavenumber diagrams. In fact, the modified Rhines scale turns out to be a useful measure of the dominant meridional wavenumber of the modulating Rossby waves; once this is fixed, apart from a spectral peak at the origin (the steady jet), almost all the energy is contained in westward propagating disturbances that follow the theoretical Rossby dispersion relation. Quite consistently, noting that the zonal scale of the modulating waves is restricted to the first few wavenumbers, the energy spectrum is almost entirely contained within the corresponding Rossby dispersion curves on a frequency-meridional wavenumber diagram. Cases when jets do not form are also considered; once again, there is a hint of Rossby wave activity, though the spectral peaks are quite muted. Further, the kinetic energy scaling in frequency domain follows a -5/3 power-law and is distributed much more broadly in frequency-wavenumber diagrams. (C) 2015 AIP Publishing LLC.

Morphology controlled synthesis of Al doped ZnO nanosheets on Al alloy substrate by low-temperature solution growth method

We report the morphology-controlled synthesis of aluminium (Al) doped zinc oxide (ZnO) nanosheets on Al alloy (AA-6061) substrate by a low-temperature solution growth method without using any external seed layer and doping process. Doped ZnO nanosheets were obtained at low temperatures of 60-90 degrees C for the growth time of 4 hours. In addition to the synthesis, the effect of growth temperature on the morphological changes of ZnO nanosheets is also reported. As-synthesized nanosheets are characterized by FE-SEM, XRD TEM and XPS for their morphology, crystallinity, microstructure and compositional analysis respectively. The doping of Al in ZnO nanosheets is confirmed with EDXS and XPS. Furthermore, the effect of growth temperature on the morphological changes was studied in the range of 50 to 95 degrees C. It was found that the thickness and height of the nanosheets varied with respect to the growth temperature. The study has given an important insight into the structural morphology with respect to the growth temperature, which in turn enabled us to determine the growth temperature window for the ZnO nanosheets. These Al doped ZnO nanosheets have potential application possibilities in gas sensors, solar cells and energy harvesting devices like nanogenerators.

Facile green fabrication of iron-doped cubic ZrO2 nanoparticles by Phyllanthus acidus: Structural, photocatalytic and photoluminescent properties

Cubic ZrO2: Fe3+ (0.5-4 mol%) nanoparticles (NPs) were synthesized via bin-inspired, inexpensive and simple route using Phyllanthus acidus as fuel. PXRD, SEM, TEM, FTIR, UV absorption and PL studies were performed to ascertain the formation of NPs. Rietveld analysis confirmed the formation of cubic structure. The influence of Fe3+ on the structure, morphology, UV absorption, PL emission and photocatalytic activity of NPs were investigated. The CIE chromaticity coordinates (0.36, 0.41) show that NPs could be a promising candidate for white LEDs. The influence of Fe3+ on ZrO2 matrix for photocatalytic degradation of AO7 was evaluated under UVA and Sunlight irradiation. The enhanced photocatalytic activity of spherical shaped ZrO2: Fe3+ (2 mol%) under UVA light was attributed to dopant concentration, crystallite size, narrow band gap, textural properties and capability for reducing the electron-hole pair recombination. The trend of inhibitory effect in the presence of different radical scavengers were followed the order SO42- > Cl- > C2H5OH > HCO3- > CO32-. The recycling catalytic ability of the ZrO2: Fe3+ (2 mol%) was also evaluated with a negligible decrease in the degradation efficiency even after the sixth successive run. (C) 2014 Elsevier B.V. All rights reserved.

Sensitivity characteristics of Ag doped BaTiO3-CuO mixed oxide as Carbon-dioxide S ensor

Ag doped BaTiO3-CuO mixed oxide thin films are evaluated for their carbon-dioxide sensing characteristics. The metal oxide films of different thicknesses are deposited on oxidized p type Si < 100 > substrate by RF Sputtering. Sensing characteristics for different CO2 concentration, (300 ppm - 1000 ppm) are obtained for different operating temperatures, (100 degrees C - 400 degrees C). Optimum temperature for maximum sensitivity is found to be 250 degrees C. The effect of annealing on sensing properties is also evaluated. The unannealed films give better sensitivity than that of annealed films. Response time and recovery time are also calculated.