Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 +/- 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 +/- 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.

DIFFUSE X-RAY EMISSION FROM STAR-FORMING GALAXIES

We study the diffuse X-ray luminosity (L-X) of star-forming galaxies using two-dimensional axisymmetric hydrodynamical simulations and analytical considerations of supernovae-(SNe-) driven galactic outflows. We find that the mass loading of the outflows, a crucial parameter for determining the X-ray luminosity, is constrained by the availability of gas in the central star-forming region, and a competition between cooling and expansion. We show that the allowed range of the mass loading factor can explain the observed scaling of L-X with star formation rate (SFR) as L-X alpha SFR2 for SFR greater than or similar to 1 M-circle dot yr(-1), and a flatter relation at low SFRs. We also show that the emission from the hot circumgalactic medium (CGM) in the halo of massive galaxies can explain the large scatter in the L-X-SFR relation for low SFRs (less than or similar to few M-circle dot yr(-1)). Our results suggest that galaxies with small SFRs and large diffuse X-ray luminosities are excellent candidates for the detection of the elusive CGM.

Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 +/- 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 +/- 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.