329 resultados para Beam parameter product (BPP)


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The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.

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In this paper, the stiffness and mass per unit length distributions of a rotating beam, which is isospectral to a given uniform axially loaded nonrotating beam, are determined analytically. The Barcilon-Gottlieb transformation is extended so that it transforms the governing equation of a rotating beam into the governing equation of a uniform, axially loaded nonrotating beam. Analysis is limited to a certain class of Euler-Bernoulli cantilever beams, where the product between the stiffness and the cube of mass per unit length is a constant. The derived mass and stiffness distributions of the rotating beam are used in a finite element analysis to confirm the frequency equivalence of the given and derived beams. Examples of physically realizable beams that have a rectangular cross section are shown as a practical application of the analysis.

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Growth of high density germanium nanowires on Si substrates by electron beam evaporation (EBE) has been demonstrated using gold as catalyst. The germanium atoms are provided by evaporating germanium by electron beam evaporation (EBE) technique. Effect of substrate (growth) temperature and deposition time on the growth of nanowires has studied. The morphology of the nanowires was investigated by field emission scanning electron microscope (FESEM). It has been observed that a narrow temperature window from 380 degrees C to 480 degrees C is good for the nanowires growth as well as restriction on the maximum length of nanowires. It is also observed that high substrate temperature leading to the completely absence of nanowire growth.

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Using a Girsanov change of measures, we propose novel variations within a particle-filtering algorithm, as applied to the inverse problem of state and parameter estimations of nonlinear dynamical systems of engineering interest, toward weakly correcting for the linearization or integration errors that almost invariably occur whilst numerically propagating the process dynamics, typically governed by nonlinear stochastic differential equations (SDEs). Specifically, the correction for linearization, provided by the likelihood or the Radon-Nikodym derivative, is incorporated within the evolving flow in two steps. Once the likelihood, an exponential martingale, is split into a product of two factors, correction owing to the first factor is implemented via rejection sampling in the first step. The second factor, which is directly computable, is accounted for via two different schemes, one employing resampling and the other using a gain-weighted innovation term added to the drift field of the process dynamics thereby overcoming the problem of sample dispersion posed by resampling. The proposed strategies, employed as add-ons to existing particle filters, the bootstrap and auxiliary SIR filters in this work, are found to non-trivially improve the convergence and accuracy of the estimates and also yield reduced mean square errors of such estimates vis-a-vis those obtained through the parent-filtering schemes.

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We demonstrate the launching of laser-cooled Yb atoms in a continuous atomic beam. The continuous cold beam has significant advantages over the more-common pulsed fountain, which was also demonstrated by us recently. The cold beam is formed in the following steps: i) atoms from a thermal beam are first Zeeman-slowed to a small final velocity; ii) the slowed atoms are captured in a two-dimensional magneto-optic trap (2D-MOT); and iii) atoms are launched continuously in the vertical direction using two sets of moving-molasses beams, inclined at +/- 15 degrees to the vertical. The cooling transition used is the strongly allowed S-1(0) -> P-1(1) transition at 399 nm. We capture about 7x10(6) atoms in the 2D-MOT, and then launch them with a vertical velocity of 13m/s at a longitudinal temperature of 125(6) mK. Copyright (C) EPLA, 2013

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Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

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The primary objective of the present study is to show that for the most common configuration of an impactor system, the accelerometer cannot exactly reproduce the dynamic response of a specimen subjected to impact loading. An equivalent Lumped Parameter Model (LPM) of the given impactor set-up has been formulated for assessing the accuracy of an accelerometer mounted in a drop-weight impactor set-up for an axially loaded specimen. A specimen under the impact loading is represented by a non-linear spring of varying stiffness, while the accelerometer is assumed to behave in a linear manner due to its high stiffness. Specimens made of steel, aluminium and fibre-reinforced composite (FRC) are used in the present study. Assuming the force-displacement response obtained in an actual impact test to be the true behaviour of the test specimen, a suitable numerical approach has been used to solve the governing non-linear differential equations of a three degrees-of-freedom (DOF) system in a piece-wise linear manner. The numerical solution of the governing differential equations following an explicit time integration scheme yields an excellent reproduction of the mechanical behaviour of the specimen, consequently confirming the accuracy of the numerical approach. However, the spring representing the accelerometer predicts a response that qualitatively matches the assumed force-displacement response of the test specimen with a perceptibly lower magnitude of load.

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This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

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Wavelet coefficients based on spatial wavelets are used as damage indicators to identify the damage location as well as the size of the damage in a laminated composite beam with localized matrix cracks. A finite element model of the composite beam is used in conjunction with a matrix crack based damage model to simulate the damaged composite beam structure. The modes of vibration of the beam are analyzed using the wavelet transform in order to identify the location and the extent of the damage by sensing the local perturbations at the damage locations. The location of the damage is identified by a sudden change in spatial distribution of wavelet coefficients. Monte Carlo Simulations (MCS) are used to investigate the effect of ply level uncertainty in composite material properties such as ply longitudinal stiffness, transverse stiffness, shear modulus and Poisson's ratio on damage detection parameter, wavelet coefficient. In this study, numerical simulations are done for single and multiple damage cases. It is observed that spatial wavelets can be used as a reliable damage detection tool for composite beams with localized matrix cracks which can result from low velocity impact damage.

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A computationally efficient approach that computes the optimal regularization parameter for the Tikhonov-minimization scheme is developed for photoacoustic imaging. This approach is based on the least squares-QR decomposition which is a well-known dimensionality reduction technique for a large system of equations. It is shown that the proposed framework is effective in terms of quantitative and qualitative reconstructions of initial pressure distribution enabled via finding an optimal regularization parameter. The computational efficiency and performance of the proposed method are shown using a test case of numerical blood vessel phantom, where the initial pressure is exactly known for quantitative comparison. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)

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The product dimension of a graph G is defined as the minimum natural number l such that G is an induced subgraph of a direct product of l complete graphs. In this paper we study the product dimension of forests, bounded treewidth graphs and k-degenerate graphs. We show that every forest on n vertices has product dimension at most 1.441 log n + 3. This improves the best known upper bound of 3 log n for the same due to Poljak and Pultr. The technique used in arriving at the above bound is extended and combined with a well-known result on the existence of orthogonal Latin squares to show that every graph on n vertices with treewidth at most t has product dimension at most (t + 2) (log n + 1). We also show that every k-degenerate graph on n vertices has product dimension at most inverted right perpendicular5.545 k log ninverted left perpendicular + 1. This improves the upper bound of 32 k log n for the same by Eaton and Rodl.

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This paper presents the design and development of a novel optical vehicle classifier system, which is based on interruption of laser beams, that is suitable for use in places with poor transportation infrastructure. The system can estimate the speed, axle count, wheelbase, tire diameter, and the lane of motion of a vehicle. The design of the system eliminates the need for careful optical alignment, whereas the proposed estimation strategies render the estimates insensitive to angular mounting errors and to unevenness of the road. Strategies to estimate vehicular parameters are described along with the optimization of the geometry of the system to minimize estimation errors due to quantization. The system is subsequently fabricated, and the proposed features of the system are experimentally demonstrated. The relative errors in the estimation of velocity and tire diameter are shown to be within 0.5% and to change by less than 17% for angular mounting errors up to 30 degrees. In the field, the classifier demonstrates accuracy better than 97.5% and 94%, respectively, in the estimation of the wheelbase and lane of motion and can classify vehicles with an average accuracy of over 89.5%.

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This paper presents a unified taxonomy of shape features. Such taxonomy is required to construct ontologies to address heterogeneity in product/shape models. Literature provides separate classifications for volumetric, deformation and free-form surface features. The unified taxonomy proposed allows classification, representation and extraction of shape features in a product model. The novelty of the taxonomy is that the classification is based purely on shape entities and therefore it is possible to automatically extract the features from any shape model. This enables the use of this taxonomy to build reference ontology.

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The problem of semantic interoperability arises while integrating applications in different task domains across the product life cycle. A new shape-function-relationship (SFR) framework is proposed as a taxonomy based on which an ontology is developed. Ontology based on the SFR framework, that captures explicit definition of terminology and knowledge relationships in terms of shape, function and relationship descriptors, offers an attractive approach for solving semantic interoperability issue. Since all instances of terms are based on single taxonomy with a formal classification, mapping of terms requires a simple check on the attributes used in the classification. As a preliminary study, the framework is used to develop ontology of terms used in the aero-engine domain and the ontology is used to resolve the semantic interoperability problem in the integration of design and maintenance. Since the framework allows a single term to have multiple classifications, handling context dependent usage of terms becomes possible. Automating the classification of terms and establishing the completeness of the classification scheme are being addressed presently.

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Studies were carried on the growth behavior of InN nanodots by plasma assisted molecular beam epitaxy on bare Si(100) substrates and their structural, optical, electrical properties. The growth was carried out by two different methods such as, (i) mono-step growth process at a low temperature and a (ii) bi-step growth process with the combination of low and high temperatures for the formation of single crystalline nanodots with well defined crystallographic facets due to cluster migration. Low temperature photoluminescence shows a free excitonic (FE) luminescence at 0.80 eV. The Raman spectroscopy and X-ray diffraction studies reveal that the nanodots as well as the film were of wurtzite structure and strain free.