Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films

CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 mu A, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 10(8) a''broken vertical bar-cm and 10(10) a''broken vertical bar-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I-V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields < 5 x 10(4) V cm(-1), while the conduction mechanism for fields > 6 x 10(4) V cm(-1) is modified Poole-Frenkel (MPF) and Fowler-Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.

Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results

In this paper, a simple but accurate semi analytical charge sheet model is presented for threshold voltage of accumulation mode polycrystalline silicon on insulator (PSOI) MOSFETs. In this model, we define the threshold voltage (V-T) of the polysilicon accumulation mode MOSFET as the gate voltage required to raise the surface potential (phi(s)) to a value phi(sT) necessary to overcome the charge trapping in the grain boundary and to create channel accumulation charge that is equal to the channel accumulation charge available in the case of single crystal silicon accumulation mode MOSFET at that phi(sT). The correctness of the model is demonstrated by comparing the theoretically estimated values of threshold voltage with the experimentally measured threshold voltages on the accumulation mode PSOI MOSFETs fabricated in the laboratory using LPCVD polysilicon layers doped with boron to achieve dopant densities in the range 3.3 x 10(-15)-5 x 10(17)/cm(3). Further, it is shown that the threshold voltage values of accumulation mode PSOI MOSFETs predicted by the present model match very closely with the experimental results, better than those obtained with the models previously reported in the literature. (C) 2012 Elsevier B.V. All rights reserved.

SOI strip waveguide microring resonator for homogeneous biosensing

We report the simulation and analytical results obtained for homogenous or bulk sensing of protein on Siliconon- insulator strip waveguide based microring resonator. The radii of the rings considered are 5 μm and 20 μm; the waveguide dimensions are 300 × 300 nm. A gap of (i) 200 nm and (ii) 300 nm exists between the ring and the bus waveguide. The biomaterial is uniformly distributed over a thickness which exceeds the evanescent field penetration depth of 150 nm. The sensitivities of the resonators are 32.5 nm/RIU and 17.5 nm/RIU (RIU - Refractive index unit) respectively.

Magnetization in electron- and Mn- doped SrTiO3

Mn- doped SrTiO3.0, when synthesized free of impurities, is a paramagnetic insulator with interesting dielectric properties. Since delocalized charge carriers are known to promote ferromagnetism in a large number of systems via diverse mechanisms, we have looked for the possibility of any intrinsic, spontaneous magnetization by simultaneous doping of Mn ions and electrons into SrTiO3 via oxygen vacancies, thereby forming SrTi1-xMnxO3-delta, to the extent of making the doped system metallic. We find an absence of any enhancement of the magnetization in the metallic sample when compared with a similarly prepared Mn doped, however, insulating sample. Our results, thus, are not in agreement with a recent observation of a weak ferromagnetism in metallic Mn doped SrTiO3 system.

Estimation of electric stress and surface potential for traction insulators

Traction insulators are solid core insulators widely used for railway electrification. Constant exposure to detrimental effects of vandalism, and mechanical vibrations begets certain faults like shorting of sheds or cracks in the sheds. Due to fault in one/two sheds, stress on the remaining healthy sheds increases, owing to atmospheric pollution the stress may lead to a flashover of the insulator. Presently due to non availability of the electric stress data for the insulators, simulation study is carried out to find the potential and electric field for most widely used traction insulators in the country. The results of potential and electric field stress obtained for normal and faulty imposed insulators are presented.

Majorana fermions in superconducting 1D systems having periodic, quasiperiodic, and disordered potentials

We present a unified study of the effect of periodic, quasiperiodic, and disordered potentials on topological phases that are characterized by Majorana end modes in one-dimensional p-wave superconducting systems. We define a topological invariant derived from the equations of motion for Majorana modes and, as our first application, employ it to characterize the phase diagram for simple periodic structures. Our general result is a relation between the topological invariant and the normal state localization length. This link allows us to leverage the considerable literature on localization physics and obtain the topological phase diagrams and their salient features for quasiperiodic and disordered systems for the entire region of parameter space. DOI: 10.1103/PhysRevLett.110.146404

Bismuth carboxylates with Brucite- and Fluorite-related structures: synthesis structure and properties

Three new compounds of bismuth, C4N2H10]center dotBi(C7H4NO4)(C7H3NO4)]center dot H2O, I, Bi(C5H3N2O4) (C5H2N2O4)], II, and Bi(mu(2)-OH)(C7H3NO4)], III, have been prepared by the reaction between bismuth nitrate and heterocyclic aromatic dicarboxylic acids, 2,6-pyridinedicarboxylic acid, 4,5-imidazoledicarboxylic acid, and 3,4-pyridinedicarboxylic acid, respectively, under hydrothermal conditions. The structures of all the compounds have linkages between Bi2O2 and the corresponding dicarboxylate forming a simple molecular unit in I, a bilayer arrangement in II, and a three-dimensional extended structure in III. The topological arrangement of the nodal building units in the structures indicates that a brucite-related layer (II) and fluorite-related arrangement (III) can be realized in these structures. By utilizing the secondary interactions, one can correlate the structure of III to a Kagome-related one. The observation of such classical inorganic related structures in the bismuth carboxylates is noteworthy. Lewis acid catalytic studies on the formation of ketal suggest the possible participatory role of the lone pair of electrons. All the compounds are characterized employing elemental analysis, IR, UV-vis, and thermal studies.

Quantum phases and phase transitions of frustrated hard-core bosons on a triangular ladder

Kinetically frustrated bosons at half filling in the presence of a competing nearest-neighbor repulsion support a wide supersolid regime on the two-dimensional triangular lattice. We study this model on a two-leg ladder using the finite-size density-matrix renormalization-group method, obtaining a phase diagram which contains three phases: a uniform superfluid (SF), an insulating charge density wave (CDW) crystal, and a bond ordered insulator (BO). We show that the transitions from SF to CDW and SF to BO are continuous in nature, with critical exponents varying continuously along the phase boundaries, while the transition from CDW to BO is found to be first order. The phase diagram is also found to contain an exactly solvable Majumdar Ghosh point, and reentrant SF to CDW phase transitions.

Process control of cantilever deflection for sensor application based on optical waveguides

This paper reports on the fabrication of cantilever silicon-on-insulator (SOI) optical waveguides and presents solutions to the challenges of using a very thin 260-nm active silicon layer in the SOI structure to enable single-transverse-mode operation of the waveguide with minimal optical transmission losses. In particular, to ameliorate the anchor effect caused by the mean stress difference between the active silicon layer and buried oxide layer, a cantilever flattening process based on Ar plasma treatment is developed and presented. Vertical deflections of 0.5 mu m for 70-mu m-long cantilevers are mitigated to within few nanometers. Experimental investigations of cantilever mechanical resonance characteristics confirm the absence of significant detrimental side effects. Optical and mechanical modeling is extensively used to supplement experimental observations. This approach can satisfy the requirements for on-chip simultaneous readout of many integrated cantilever sensors in which the displacement or resonant frequency changes induced by analyte absorption are measured using an optical-waveguide-based division multiplexed system.

Quantum entropic ambiguities: Ethylene

In a quantum system, there may be many density matrices associated with a state on an algebra of observables. For each density matrix, one can compute its entropy. These are, in general, different. Therefore, one reaches the remarkable possibility that there may be many entropies for a given state R. Sorkin (private communication)]. This ambiguity in entropy can often be traced to a gauge symmetry emergent from the nontrivial topological character of the configuration space of the underlying system. It can also happen in finite-dimensional matrix models. In the present work, we discuss this entropy ambiguity and its consequences for an ethylene molecule. This is a very simple and well-known system, where these notions can be put to tests. Of particular interest in this discussion is the fact that the change of the density matrix with the corresponding entropy increase drives the system towards the maximally disordered state with maximum entropy, where Boltzman's formula applies. Besides its intrinsic conceptual interest, the simplicity of this model can serve as an introduction to a similar discussion of systems such as colored monopoles and the breaking of color symmetry.

State estimation in power systems using linear model infinity norm-based trust region approach

State estimation is one of the most important functions in an energy control centre. An computationally efficient state estimator which is free from numerical instability/ill-conditioning is essential for security assessment of electric power grid. Whereas approaches to successfully overcome the numerical ill-conditioning issues have been proposed, an efficient algorithm for addressing the convergence issues in the presence of topological errors is yet to be evolved. Trust region (TR) methods have been successfully employed to overcome the divergence problem to certain extent. In this study, case studies are presented where the conventional algorithms including the existing TR methods would fail to converge. A linearised model-based TR method for successfully overcoming the convergence issues is proposed. On the computational front, unlike the existing TR methods for state estimation which employ quadratic models, the proposed linear model-based estimator is computationally efficient because the model minimiser can be computed in a single step. The model minimiser at each step is computed by minimising the linearised model in the presence of TR and measurement mismatch constraints. The infinity norm is used to define the geometry of the TR. Measurement mismatch constraints are employed to improve the accuracy. The proposed algorithm is compared with the quadratic model-based TR algorithm with case studies on the IEEE 30-bus system, 205-bus and 514-bus equivalent systems of part of Indian grid.

Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET)

In this paper, we analyze the combined effects of size quantization and device temperature variations (T = 50K to 400 K) on the intrinsic carrier concentration (n(i)), electron concentration (n) and thereby on the threshold voltage (V-th) for thin silicon film (t(si) = 1 nm to 10 nm) based fully-depleted Double-Gate Silicon-on-Insulator MOSFETs. The threshold voltage (V-th) is defined as the gate voltage (V-g) at which the potential at the center of the channel (Phi(c)) begins to saturate (Phi(c) = Phi(c(sat))). It is shown that in the strong quantum confinement regime (t(si) <= 3nm), the effects of size quantization far over-ride the effects of temperature variations on the total change in band-gap (Delta E-g(eff)), intrinsic carrier concentration (n(i)), electron concentration (n), Phi(c(sat)) and the threshold voltage (V-th). On the other hand, for t(si) >= 4 nm, it is shown that size quantization effects recede with increasing t(si), while the effects of temperature variations become increasingly significant. Through detailed analysis, a physical model for the threshold voltage is presented both for the undoped and doped cases valid over a wide-range of device temperatures, silicon film thicknesses and substrate doping densities. Both in the undoped and doped cases, it is shown that the threshold voltage strongly depends on the channel charge density and that it is independent of incomplete ionization effects, at lower device temperatures. The results are compared with the published work available in literature, and it is shown that the present approach incorporates quantization and temperature effects over the entire temperature range. We also present an analytical model for V-th as a function of device temperature (T). (C) 2013 AIP Publishing LLC.

A Hybrid Parallel Algorithm for Computing and Tracking Level Set Topology

The contour tree is a topological abstraction of a scalar field that captures evolution in level set connectivity. It is an effective representation for visual exploration and analysis of scientific data. We describe a work-efficient, output sensitive, and scalable parallel algorithm for computing the contour tree of a scalar field defined on a domain that is represented using either an unstructured mesh or a structured grid. A hybrid implementation of the algorithm using the GPU and multi-core CPU can compute the contour tree of an input containing 16 million vertices in less than ten seconds with a speedup factor of upto 13. Experiments based on an implementation in a multi-core CPU environment show near-linear speedup for large data sets.

Transition and acoustic response of recirculation structures in an unconfined co-axial isothermal swirling flow

This paper reports the first observations of transition from a pre-vortex breakdown (Pre-VB) flowreversal to a fully developed central toroidal recirculation zone in a non-reacting, double-concentric swirling jet configuration and its response to longitudinal acoustic excitation. This transition proceeds with the formation of two intermediate, critical flow regimes. First, a partially penetrated vortex breakdown bubble (VBB) is formed that indicates the first occurrence of an enclosed structure as the centre jet penetration is suppressed by the growing outer roll-up eddy; resulting in an opposed flow stagnation region. Second, a metastable transition structure is formed that marks the collapse of inner mixing vortices. In this study, the time-averaged topological changes in the coherent recirculation structures are discussed based on the non-dimensional modified Rossby number (Ro(m)) which appears to describe the spreading of the zone of swirl influence in different flow regimes. Further, the time-mean global acoustic response of pre-VB and VBB is measured as a function of pulsing frequency using the relative aerodynamic blockage factor (i.e., maximum radial width of the inner recirculation zone). It is observed that all flow modes except VBB are structurally unstable as they exhibit severe transverse radial shrinkage (similar to 20%) at the burner Helmholtz resonant modes (100-110 Hz). In contrast, all flow regimes show positional instability as seen by the large-scale, asymmetric spatial shifting of the vortex core centres. Finally, the mixing transfer function M (f) and magnitude squared coherence lambda(2)(f) analysis is presented to determine the natural couplingmodes of the system dynamic parameters (u', p'), i.e., local acoustic response. It is seen that the pre-VB flow mode exhibits a narrow-band, low pass filter behavior with a linear response window of 100-105 Hz. However, in the VBB structure, presence of critical regions such as the opposed flow stagnation region alters the linearity range with the structure showing a response even at higher pulsing frequencies (100-300 Hz). (C) 2013 AIP Publishing LLC.

Information content of molecular graph and prediction of gas phase thermal entropy of organic compounds

Entropy is a fundamental thermodynamic property that has attracted a wide attention across domains, including chemistry. Inference of entropy of chemical compounds using various approaches has been a widely studied topic. However, many aspects of entropy in chemical compounds remain unexplained. In the present work, we propose two new information-theoretical molecular descriptors for the prediction of gas phase thermal entropy of organic compounds. The descriptors reflect the bulk and size of the compounds as well as the gross topological symmetry in their structures, all of which are believed to determine entropy. A high correlation () between the entropy values and our information-theoretical indices have been found and the predicted entropy values, obtained from the corresponding statistically significant regression model, have been found to be within acceptable approximation. We provide additional mathematical result in the form of a theorem and proof that might further help in assessing changes in gas phase thermal entropy values with the changes in molecular structures. The proposed information-theoretical molecular descriptors, regression model and the mathematical result are expected to augment predictions of gas phase thermal entropy for a large number of chemical compounds.