Noise-spike-induced escape in a bistable system driven by colored noise: Noise with long correlation times

An escape mechanism in a bistable system driven by colored noise of large but finite correlation time (tau) is analyzed. It is shown that the fluctuating potential theory [Phys. Rev. A 38, 3749 (1988)] becomes invalid in a region around the inflection points of the bistable potential, resulting in the underestimation of the mean first passage time at finite tau by this theory. It is shown that transitions at large but finite tau are caused by noise spikes, with edges rising and falling exponentially in a time of O(tau). Simulation of the dynamics of the bistable system driven by noise spikes of the above-mentioned nature clearly reveal the physical mechanism behind the transition.

Pillaring of smectites using an aluminium oligomer: A study of pillar density and thermal stability

Two smectite samples having different layer charges were pillared using hydroxy aluminium oligomers at a OH/Al ratio of 2.5 and at pH 4.3 to 4.6. Pillaring was carried out at different conditions such as ageing, temperature and base addition time of the pillaring solution, and also in the presence of nonionic surfactant polyoxyethylene sorbitanmonooleate (Tween-80). The primary objective of preparing at different conditions was to introduce varied quantities of aluminium oligomer between the layers and to study its effect on the properties of the pillared products. A simple method has been followed to estimate the amount of interlayer aluminium. A quantity called pillar density number (PDN) based on the ratio of interlayer Al adsorbed to CEC of the parent clay has been effectively used to evaluate the nature of the resulting pillared product. PDN, for a given clay, was found to correlate well with the sharpness of the d(001) peaks for the air dried samples. The calculated number of pillars, varied from 3.00 x 10(18) to 5.32 x 10(18) per meq charge. The present study shows that a higher value of PDN is indicative of better thermal stability. Pillar density number may be conveniently used as a measure of the thermal stability of pillared samples.

Thermal Stability of Spherical Nanoporous Aggregates and Formation of Hollow Structures by Sintering-A Phase-Field Study

Nanoporous structures are widely used for many applications and hence it Is important to investigate their thermal stability. We study the stability of spherical nanoporous aggregates using phase-field simulations that explore systematically the effect of grain boundary diffusion, surface diffusion, and grain boundary mobility on the pathways for microstructural evolution. Our simulations for different combinations of surface and GB diffusivity and GB mobility show four distinct microstructural pathways en route to 100% density: multiple dosed pores, hollow shells, hollow shells with a core, and multiple interconnected pores. The microstructures from our simulations are consistent with experimental observations in several different systems. Our results have important implications for rational synthesis of hollow nanostructures or aggregates with open pores, and for controlling the stability of nanoporous aggregates that are widely used for many applications.

Thermal and electrical properties of AgI-based composites

AgI-based composites with a general formula AgI---MxOy (MxOy = ZrO2, CeO2, Fe2O3, Sm2O3, MoO3 and WO3) have been studied in detail. The enhancement in the conductivity of AgI and its unusual thermal stability and amorphization are explained assuming a chemical interaction at the oxide-AgI interface.

Thermal expansion of irradiated polyvinyl chloride from 10 K to 340 K

The coefficient of thermal expansion is measured for irradiated Polyvinyl Chloride (PVC) from 10K to 340K. The samples of PVC are irradiated, up to 500 Mrad in steps of 100 Mrad, in air at room temperature by using Co gamma rays with a dose rate of 0.3 Mrad/h. The PVC is an amorphous sample which is confirmed by X-ray diffraction. The coefficient of thermal expansion is found to decrease with radiation dose from 10K to 110K and it increaseswith radiation dose from 110K to 340K. The results are explained on the basis of radiation induced degradation of the sample.

Experimental results of an activated carbon-HFC 134a adsorption cooling system for thermal management of electronics

Results of performance measurement of a small cooling capacity laboratory model of an adsorption refrigeration system for thermal management of electronics are compiled. This adsorption cooler was built with activated carbon as the adsorbent and HFC 134a as the refrigerant to produce a cooling capacity under 5 W using waste heat up to 90 degrees C. The thermal compression process is obtained from an ensemble of four solid sorption compressors. Parametric study was conducted with cycle times of 16 and 20 min, heat source temperatures from 73 to 87 degrees C and cooling loads from 3 to 4.9W. Overall system performance is analyzed using two indicators, namely, cooling effectiveness and normalized exergetic efficiency. (C) 2011 Elsevier Ltd. All rights reserved.

Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Rapid thermal processed thin films of reactively sputtered Ta2O5

Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 x 10(-8) A cm(-2). A rapid thermal annealing process at temperatures above 700 degrees C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 degrees C increased to 45 and its leakage current density lowered to 2 x 10(-8) A cm(-2). The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.

Surfactant lipids containing aromatic units produce vesicular membranes with high thermal stability

Six new vesicle-forming, cationic surfactant lipids are synthesized. Four of them contain 'flat' aromatic units at different locations of hydrophobic segments. In order to estimate the influence of aromatic units in the lipid monomer two other surfactant lipids of related structure with n-butyloxy units in the places of aromatic groups were also prepared. Transmission electron microscopy confirmed the vesicular membrane formation from these newly synthesized lipids. DSC or temperature-dependent keto-enol tautomerism of benzoylacetanilide-doped vesicles reveal a remarkable increase in the thermal stability of the membranes formed from aromatic surfactant lipids in contradistinction to their counterparts that contain n-butyloxy units. The enhanced thermal stability originates presumably as a consequence of inter-monomer stacking.

Thermal expansion studies of substituted CTP derivatives

Several new Na, Y and Zr substituted derivatives of Ca-0.5 Ti-2(PO4)(3) (CTP) have been synthesized. These derivatives retain the hexagonal structure of the parent (CTP) compound with minor changes in lattice parameters. Linear thermal expansion coefficients (alpha) have been obtained using a high sensitivity dilatometer.

Al2O3---ZrO2 composite coatings for thermal-barrier applications

Graded alternate layers of Al2O3 and 8% Y2O3-ZrO2 and their admixtures were plasma sprayed onto bond-coated mild steel. They were evaluated for thermal-shock resistance, thermal-barrier characteristics, hot corrosion resistance (molten NaCl corrodant) and depth of attack, adhesion strength and the presence of phases. Although front-back temperature drops of 423-623 K were observed, some of the coatings showed good adherence even after 100 thermal shack cycles. In the sequence of the graded layers, the oxide which is directly in contact with the bond coat appears to influence the properties especially in coatings of 150 and 300 mu m thickness. Molten NaCl readily attacks the films at high hot-face temperatures (1273 K for 1 h) and the adhesive strength falls significantly by 50-60%. Diffusion of alkaline elements is also found to depend on the chemical composition of the outer coating directly facing the molten corrodant. (C) 1997 Elsevier Science Limited.

Mechanism of “Autoacceleration” in the Thermal Oxidative Polymerization of R-Methylstyrene

Thermal oxidative polymerization of alpha-methylstyrene (AMS) has been studied at various temperatures(45-70 degrees C) and pressures (50-400 psi). Due to its high electron dense double bond, it undergoes thermal oxidative polymerization even at low temperatures fairly easily. The major products are poly(alpha-methylstyrene peroxide) (PMSP), and its decomposition products are acetophenone and formaldehyde. Above 45 degrees C the rate of polymerization increases sharply at a particular instant showing an ''autoacceleration'' with the formation of a knee point. The ''autoacceleration'' is supported from the fact that the plot, of R-p vs T shows a rapid rise, and the plot of ln R-p vs 1/T is non-Arrhenius. The occurrence of autoacceleration is explained on the basis of acetophenone-induced cleavage of PMSP during polymerization, generating more initiating alkoxy radicals, which subsequently leads to the rapid rise in the rate of polymerization. The mechanism of autoacceleration is supported by the change in. order, activation energy, and activation volume before and after the knee point.

Origin of carrier-type reversal in Pb-Ge-Se glasses: A detailed thermal, electrical, and structural study

A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb-Ge-Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0-20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band structures of Ge-Se glasses has been considered. The p -->n transition has been attributed to the energetic disposition of the sp(3)d(2) band of Pb atoms, which is located closely above the lone pair band of selenium. This feature makes Pb unique in the context of p -->n transition of chalcogenide glasses. The model can be extended successfully to account for the CTR behavior observed in Bi containing chalcogenide glasses also.

Effect of Melt Convection on The Optimum Thermal Design Of Heat Sinks With Phase Change Material

In this paper, the role of melt convection on the performance of heat sinks with phase change material (PCM) is investigated numerically. The heat sink consists of aluminum plate fins embedded in PCM, and is subjected to heat flux supplied from the bottom. A single-domain enthalpy-based CFD model is developed, which is capable of simulating the phase change process and the associated melt convection. The CFD model is coupled with a genetic algorithm for carrying out the optimization. Two cases are considered, namely, one without melt convection (i.e., conduction heat transfer analysis), and the other with convection. It is found that the geometrical optimizations of heat sinks are different for the two cases, indicating the importance of melt convection in the design of heat sinks with PCMs. In the case of conduction analysis, the optimum width of half fin (i.e., sum of half pitch and half fin thickness) is a constant, which is in good agreement with results reported in the literature. On the other hand, if melt convection is considered, the optimum half fin width depends on the effective thermal diffusivity due to conduction and convection. With melt convection, the optimized design results in a significant improvement of operational time.

Escape of high mass ions due to initial thermal energy and its implications for axially symmetric RF ion trap mass analyzer design

This paper investigates the loss of high mass ions due to their initial thermal energy in ion trap mass analyzers. It provides an analytical expression for estimating the percentage loss of ions of a given mass at a particular temperature, in a trap operating under a predetermined set of conditions. The expression we developed can be used to study the loss of ions due to its initial thermal energy in traps which have nonlinear fields as well as those which have linear fields. The expression for the percentage of ions lost is shown to be a function of the temperature of the ensemble of ions, ion mass and ion escape velocity. An analytical expression for the escape velocity has also been derived in terms of the trapping field, drive frequency and ion mass. Because the trapping field is determined by trap design parameters and operating conditions, it has been possible to study the influence of these parameters on ion loss. The parameters investigated include ion temperature, magnitude of the initial potential applied to the ring electrode (which determines the low mass cut-off), trap size, dimensions of apertures in the endcap electrodes and RF drive frequency. Our studies demonstrate that ion loss due to initial thermal energy increases with increase in mass and that, in the traps investigated, ion escape occurs in the radial direction. Reduction in the loss of high mass ions is favoured by lower ion temperatures, increasing low mass cut-off, increasing trap size, and higher RF drive frequencies. However, dimensions of the apertures in the endcap electrodes do not influence ion loss in the range of aperture sizes considered. (C) 2010 Elsevier B.V. All rights reserved.