High voltage DC power supply topology for pulsed load applications with converter switching synchronized to load pulses

High voltage power supplies for radar applications are investigated, which are subjected to pulsed load (125 kHz and 10% duty cycle) with stringent specifications (<0.01% regulation, efficiency>85%, droop<0.5 V/micro-sec.). As good regulation and stable operation requires the converter to be switched at much higher frequency than the pulse load frequency, transformer poses serious problems of insulation failure and higher losses. This paper proposes a methodology to tackle the problems associated with this type of application. Synchronization of converter switching with load pulses enables the converter to switch at half the load switching frequency. Low switching frequency helps in ensuring safety of HV transformer insulation and reduction of losses due to skin and proximity effect. Phase-modulated series resonant converter with ZVS is used as the power converter.

Input voltage modulated high voltage DC power supply topology for pulsed load applications

High voltage power supplies for radar applications are investigated which are subjected to pulsed load with stringent specifications. In the proposed solution, power conversion is done in two stages. A low power-high frequency converter modulates the input voltage of a high power-low frequency converter. This method satisfies all the performance specifications and takes care of the critical aspects of HV transformer.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Design parameters for earth-wire power tapping

The paper deals with the calculation of the induced voltage on, and the equivalent capacitance of, an earth wire isolated for purposes of tapping small amounts of power from high-voltage lines. The influence of heights, diameters and spacings of conductors on these quantities have been studied and presented in the form of graphs.

Performance of Tuned Half-Wave-Length Power Transmission Lines

The basic concepts of tuned half-wave lines were covered by Hubert and Gent [1]. In this paper the problem of overvoltages during faults and the stability of the system incorporating such tuned lines are discussed. The type of tuning bank and the line arrangements that will be satisfactory from the point of view of stability are suggested. The behavior of a line tuned by distributed capacitor is analyzed, and its performance is compared with the other type of tuned line.

Analysis of ferro-oscillations in power systems

The paper presents an analysis of ferro-oscillations in capacitor voltage transformers and series-compensated e.h.v. lines. The dual-input describing function is adopted to show the regions of existence and the influence of system parameters on such oscillations. A complete analytical method suitable for digital computation has been developed for determining the amplitudes of these oscillations.

Analysis of Natural Half-Wave-Length Power Transmission Lines

This paper provides additional theoretical information on half-wave-length power transmission. The analysis is rendered more general by consideration of a natural half-wave line instead of a short line tuned to half-wave. The effects of line loading and its power factor on the voltage and current profiles of the line and ganerator excitation have been included. Some of the operating problems such as charging of the line and synchronization of the half-wave system are also discussed. The inevitability of power-frequency overvoltages during faults is established. Stability studies have indicated that the use of switching stations is not beneficial. Typical swing curves are also presented.

Improvement of power-system transient stability by phase-shift insertion

Computational studies of the transient stability of a synchronous machine connected to an infinite busbar by a double-circuit transmission line are used to illustrate the effect of relative phase-shift insertion between the machine and its associated power system. This method of obtaining a change in the effective rotor-excitation angle, and thereby the power transfer, is described, together with an outline of possible methods of implementation by a phase-shifting transformer in a power system.

Characteristics of j.f.e.t.s. taking the separation of gate electrode from the source and drain electrodes into account

The performance characteristics of a junction field-effect transistor (j.f.e.t.) are evaluated considering the presence of the gap between the gate electrode and the source and drain terminals. It is concluded that the effect of the gap is to demand a higher drain voltage to maintain the same drain current. So long as the device is operated at the same drain current, the presence of the gap does not change the performance of the device as an amplifier. The nature of the performance of the device as a variable resistor is not affected by the gap if it is less than or equal to the physical height of the channel. For gap lengths larger than the channel height, the effect of the gap is to add a series resistance in the drain.