277 resultados para Growth facet


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The morphology of nanocrystalline Co3O4 synthesized through microwave irradiation of a solution of a cobalt complex is found to depend reproducibly on the conditions of synthesis and, in particular, on the composition of the solvent used. Despite the rapidity of the process, oriented aggregation occurs under certain conditions, depending on solvent composition. Annealing the oriented samples leads to microstructures with significant porosity, rendering the material suitable as electrodes for electrochemical capacitors. Electrochemical analysis of the oxide samples was carried out in 0.1M Na2SO4 electrolyte vs. Ag/AgCl electrode. A stable specific capacitance of 221 F/g was measured for a meso-porous sample displaying oriented aggregation. Stability of these oxide materials were checked for longer charge-discharge cycling. (C) 2012 The Electrochemical Society. DOI: 10.1149/2.002210jes] All rights reserved.

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Growth mechanism of phases and atomic mechanism of diffusion are discussed in the Pd-Sn system. The Kirkendall marker plane location indicates that the PdSn4 phase grows because of diffusion of Sn. Atomic arrangement in the crystal indicates that Sn can diffuse through its own sublattice but Pd cannot diffuse unless antisites are present. The negligible diffusion of Pd indicates the absence of Pd antisites. The activation energy value indicates that the contribution from grain boundary diffusion cannot be neglected although experiments were conducted in the homologous temperature range of 0.7-0.79.

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We report on the single crystal growth of 50% Sr and Y doped multiferroic DyMnO3 using optical floating zone technique. A comparison of the effect of growth ambience and of chemical substitution on the crystal structure of DyMnO3 is attempted. It is observed that DyMnO3 adopts Pm3m cubic structure with 50% Sr doping whereas with 50% Y doping, the crystal structure is hexagonal P6(3)cm. Orthorhombic Pnma structure is adopted by DyMnO3 when grown in air, whereas hexagonal P6(3)cm structure is obtained when grown under the ambience of argon. The structural polymorphism is discussed in terms of difference in ionic sizes of Sr, Y and Dy, comparable Gibbs free energies and coordination schemes of surrounding oxygens for hexagonal and orthorhombic structures of DyMnO3. (C) 2012 Elsevier B.V. All rights reserved.

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The fabrication of functional materials via grain growth engineering implicitly relies on altering the mobilities of grain boundaries (GBs) by applying external fields. Although computer simulations have alluded to kinetic roughening as a potential mechanism for modifying GB mobilities, its implications for grain growth have remained largely unexplored owing to difficulties in bridging the widely separated length and time scales. Here, by imaging GB particle dynamics as well as grain network evolution under shear, we present direct evidence for kinetic roughening of GBs and unravel its connection to grain growth in driven colloidal polycrystals. The capillary fluctuation method allows us to quantitatively extract shear-dependent effective mobilities. Remarkably, our experiments reveal that for sufficiently large strains, GBs with normals parallel to shear undergo preferential kinetic roughening, resulting in anisotropic enhancement of effective mobilities and hence directional grain growth. Single-particle level analysis shows that the mobility anisotropy emerges from strain-induced directional enhancement of activated particle hops normal to the GB plane. We expect our results to influence materials fabrication strategies for atomic and block copolymeric polycrystals as well.

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The Notch signalling pathway is implicated in a wide variety of cellular processes throughout metazoan development. Although the downstream mechanism of Notch signalling has been extensively studied, the details of its ligand-mediated receptor activation are not clearly understood. Although the role of Notch ELRs EGF (epidermal growth factor)-like-repeats] 11-12 in ligand binding is known, recent studies have suggested interactions within different ELRs of the Notch receptor whose significance remains to be understood. Here, we report critical inter-domain interactions between human Notch1 ELRs 21-30 and the ELRs 11-15 that are modulated by calcium. Surface plasmon resonance analysis revealed that the interaction between ELRs 21-30 and ELRs 11-15 is similar to 10-fold stronger than that between ELRs 11-15 and the ligands. Although there was no interaction between Notch 1 ELRs 21-30 and the ligands in vitro, addition of pre-clustered Jagged1Fc resulted in the dissociation of the preformed complex between ELRs 21-30 and 11-15, suggesting that inter-domain interactions compete for ligand binding. Furthermore, the antibodies against ELRs 21-30 inhibited ligand binding to the full-length Notch1 and subsequent receptor activation, with the antibodies against ELRs 25-26 being the most effective. These results suggest that the ELRs 25-26 represent a cryptic ligand-binding site which becomes exposed only upon the presence of the ligand. Thus, using specific antibodies against various domains of the Notch1 receptor, we demonstrate that, although ELRs 11-12 are the principal ligand-binding site, the ELRs 25-26 serve as a secondary binding site and play an important role in receptor activation.

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A simple thermal evaporation method is presented for the growth of crystalline SnO2 nanowires at a low substrate temperature of 450 degrees C via an gold-assisted vapor-liquid-solid mechanism. The as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction, and were also tested for methanol vapor sensing. Transmission electron microscopy studies revealed the single-crystalline nature of the each nanowire. The fabricated sensor shows good response to methanol vapor at an operating temperature of 450 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Generally, the length of the oxide nanowires grown by vapor phase transport is limited by the degradation of the source materials. Furthermore, the source material is used once for the nanowires growth. By exploiting the Si-Zn phase diagram, we have developed a simple methodology for the non-catalytic growth of ultralong ZnO nanowires in large area with controllable aspect ratio and branched structures. The insolubility of Zn in Si and the use of a Si cap on the Zn source to prevent local source oxidation of Zn (i.e. prevents the degradation of the source) are the keys to grow longer nanowires without limitations. It has been shown that the aspect ratio can be controlled by thermodynamically (temperature) and more importantly by kinetically (vapor flux). One of the interesting findings is that the same source material can be used for several depositions of oxide nanostructured materials.

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The objectives of this paper are to study the effects of plastic anisotropy and evolution in crystallographic texture with deformation on the ductile fracture behaviour of polycrystalline solids. To this end, numerical simulations of multiple void growth and interaction ahead of a notch tip are performed under mode I, plane strain, small scale yielding conditions using two approaches. The first approach is based on the Hill yield theory, while the second employs crystal plasticity constitutive equations and a Taylor-type homogenization in order to represent the ductile polycrystalline solid. The initial textures pertaining to continuous cast Al-Mg AA5754 sheets in recrystallized and cold rolled conditions are considered. The former is nearly-isotropic, while the latter displays pronounced anisotropy. The results indicate distinct changes in texture in the ligaments bridging the voids ahead of the notch tip with increase in load level which gives rise to retardation in porosity evolution and increase in tearing resistance for both materials.

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For the first time, Tin oxide (SnO2) multiple branched nanowires (NWs) have been synthesized by thermal evaporation of tin (Sn) in presence of oxygen without use of metal catalysts at low substrate temperature of 500 degrees C. Synthesized product consists of multiple branched nanowires and were single crystalline in nature. Each of the nanowire capped with catalyst particle at their ends. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirms that Sn act as catalyst for SnO2 nanowires growth. A self catalytic vapor-liquid-solid (VLS) growth mechanism was proposed to describe the SnO2 nanowires growth. (C) 2012 Elsevier B.V. All rights reserved.

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In this work, a fatigue crack propagation model developed using dimensional analysis for plain concrete is used in conjunction with the steel closing force to predict the crack growth behavior of reinforced concrete beams. A numerical procedure is followed using the proposed model to compute the fatigue life of RC beams and the dissipated energy in the steel reinforcement due to shake down behavior. Through a sensitivity study, it is found that the structural size is the most sensitive parameter on which the crack growth rate is dependent. Furthermore, the moment carrying capacity of an RC beam is computed as function of crack size by considering the effect of bond slip.

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This paper presents the details of crack growth study and remaining life assessment of concrete specimens made up of high strength concrete (HSC, HSC1) and ultra high strength concrete (UHSC). Flexural fatigue tests have been conducted on HSC, HSC1 and UHSC beams under constant amplitude loading with a stress ratio of 0.2. It is observed from the studies that (i) the failure patterns of HSC1 and UHSC beams indicate their ductility as the member was intact till the crack propagated up to 90% of the beam depth and (ii) the remaining life decreases with increase of notch depth (iii) the failure of the specimen is influenced by the frequency of loading. A ``Net K'' model has been proposed by using non-linear fracture mechanics principles for crack growth analysis and remaining life prediction. SIF (K) has been computed by using the principle of superposition. SIP due to the cohesive forces applied on the effective crack face inside the process zone has been obtained through Green's function approach by applying bi-linear tension softening relationship to consider the cohesive the stresses acting ahead of the crack tip. Remaining life values have been have been predicted and compared with the corresponding experimental values and observed that they are in good agreement with each other.

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Branched CNTs with nitrogen doped/un-doped intratubular junctions have been synthesized by a simple one-step co-pyrolysis of hexamethylenetetramine and benzene. The difference in the vapor pressure and the insolubility of the precursors are the keys for the formation of the branched intratubular junctions. The junctions behave like Schottky diodes with nitrogen-doped portion as metal and un-doped portion as p-type semiconductor. The junctions also behave like p-type field effect transistors with a very large on/off ratio.

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For the first time, high quality tin oxide (SnO2) nanowires have been synthesized at a low substrate temperature of 450 degrees C via vapor-liquid-solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2-4 mu m and diameter of 20-60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO2 nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO2 nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 x 10(-4) mbar suggested that a temperature equal to or greater than 450 degrees C was the best condition for phase pure SnO2 nanowires growth. The SnO2 nanowires grown on a SiO2 substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO2 NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 mu W/cm(2) UV lamp (330 nm) intensity on the photo detector.

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The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.