Relationship between nonlinear resistivity and the varistor forming mechanism in ZnO ceramics

The use of a number of perovskite phases M� M�O3-x, as the only forming additive in ZnO ceramics, produces a high nonlinearity index, ?(up to 45), where M� is a multivalent transition?metal ion and M� is an alkaline earth or a rare?earth ion. From this study, the formation parameters crucial to high nonlinearity, such as nonstoichiometry in the as?received ZnO powder, low x values of the additives and fast cooling rate after the sintering, are explainable on the basis of a depletion layer formation at the presintering stage. This is because of the surface states arising out of the chemisorbed oxygen. The depletion layer is retained during sintering as a result of the higher valence state of M� ions, preferentially present at the grain?boundary regions. The fast cooling freezes in the high?temperature concentration of donor?type defects, thereby decreasing the depletion layer width.

Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide

Improvements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30�40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed. © 1995 American Institute of Physics.

Electrical characterization of surface defects in GaSb created by hydrogen plasma

Using steady state and transient capacitance measurements, the electrical characteristics of a defect layer on the surface of bulk GaSb created during the hydrogen plasma treatment is presented. The trap density, activation energies, and the thickness of the defect layer have been calculated. The trap densities are comparable in magnitude to the carrier concentration. The defects introduce multiple energy levels in the band gap. Typical defect layer thicknesses range from a few angstroms to a fraction of a micron. © 1995 American Institute of Physics.

Thermal and electrical properties of AgI-based composites

AgI-based composites with a general formula AgI---MxOy (MxOy = ZrO2, CeO2, Fe2O3, Sm2O3, MoO3 and WO3) have been studied in detail. The enhancement in the conductivity of AgI and its unusual thermal stability and amorphization are explained assuming a chemical interaction at the oxide-AgI interface.

Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

We report here an easily reversible set-reset process in a new Ge15Te83Si2 glass that could be a promising candidate for phase change random access memory applications. The I-V characteristics of the studied sample show a comparatively low threshold electric field (E-th) of 7.3 kV/cm. Distinct differences in the type of switching behavior are achieved by means of controlling the on state current. It enables the observation of a threshold type for less than 0.7 mA beyond memory type (set) switching. The set and reset processes have been achieved with a similar magnitude of 1 mA, and with a triangular current pulse for the set process and a short duration rectangular pulse of 10 msec width for the reset operation. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse, and their response of leading and trailing edges are discussed. About 6.5 x 10(4) set-reset cycles have been undertaken without any damage to the device. (C) 2011 American Institute of Physics. doi: 10.1063/1.3574659]

Optical and electrical properties of hydrogen-passivated gallium antimonide

The effect of hydrogen-plasma passivation on the optical and electrical properties of gallium antimonide bulk single crystals is presented. Fundamental changes of the radiative recombination after hydrogenation in undoped, zinc-doped, tellurium-doped, and codoped (with Zn and Te) GaSb are reported. The results of optical measurements indicate that passivation of acceptors is more efficient than that of the donors and, in general, the passivation efficiency depends on the doping level. Passivation of deep nonradiative centers is reflected by the gain of photoluminescence intensity and decrease in deep-level transient spectroscopy peak height. Extended defects like grain boundaries and dislocations have also been found to be passivated. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level. The kinetics of thermally released hydrogen in the bulk has been studied by reverse-bias annealing experiments.

Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

Nonlinear electrical conduction and broad band noise in the charge-ordered rare earth manganate Nd0.5Ca0.5MnO3

Measurements of the dc transport properties and the low-frequency conductivity noise in films of charge-ordered Nd0.5Ca0.5MnO3 grown on Si substrate reveal the existence of a threshold field in the charge-ordered regime beyond which strong nonlinear conduction sets in along with a large broad band conductivity noise. Threshold-dependent conduction disappears as T --> T-CO, the charge-ordering temperature. This observation suggests that the charge-ordered state gets depinned at the onset of the nonlinear conduction. (C) 1999 American Institute of Physics. [S0003-6951(99)05247-X].

Spectral, thermal and electrical properties of poly(o- and m-toluidine) PVC blends prepared by solution blending

Poly(o-toluidine) (POT) and poly(m-toluidine) (PMT) blends with polyvinylchloride (PVC) of five different compositions have been prepared by solution blending. The POT-PVC and PMT-PVC blends were prepared using THF as a solvent in which POT-HNO3, PMT-HNO3 bases and PVC are soluble. The blends have been characterized by spectral, thermal and electrical measurements. The results indicate the formation of blends at all the compositions presently studied. The thermal stability of the POT-PVC and PMT-PVC blends is higher than that of POT-HNO3 and PMT-HNO3 salts, respectively. Using the present method, POT/PMT can conveniently be blended with 30% wt/wt of PVC without significant loss in its conductivity. (C) 1998 Elsevier Science Ltd. All rights reserved.

Study of the electrical properties of pulsed laser ablated (Ba0.5Sr0.5)TiO3 thin films

The laser ablated barium strontium titanate (BST) thin films were characterized in terms of composition, structure, microstructure and electrical properties. Films deposited at 300 degrees C under 50 mTorr oxygen pressure and 3 J cm(-2) laser fluence and further annealed at 600 degrees C in flowing oxygen showed a dielectric constant of 467 and a dissipation factor of 0.02. The room-temperature current-voltage characteristics revealed a space charge limited conduction (SCLC) mechanism, though at low fields the effect of the electrodes was predominant. The conduction mechanism was thoroughly-investigated in terms of Schottky emission at low fields, and bulk-limited SCLC at high fields. The change over to the bulk-limited conduction process from the electrode-limited Schottky emission was, attributed to the process of tunneling through the electrode interface at high fields resulting into the lowering of the electrode contact resistance and consequently giving rise to a bulk limited conduction process. The predominance of SCLC mechanism in the films suggests that the bulk properties are only revealed if the depletion width at the electrode interface is thin enough to allow the tunneling process to take place. This condition is only favorable if the him thickness is high or if the doping concentration is high enough. In the present case the film thickness ranged from 0.3 to 0.7 mu m which was suitable to show the transition mentioned above. (C) 1999 Elsevier Science S.A. All rights reserved.

Electrical treeing in polyethylene: effect of nano fillers on tree inception and growth

Treeing in polyethylene based nanocomposite samples as well as unfilled polyethylene samples were studied using 50Hz ac voltage. The tree inception voltage was observed for different types of samples. The tree initiation time as well as the tree growth patterns at a fixed ac voltage have also been studied. The results show that there is an improvement in tree inception voltage with nano filler loading in polyethylene. Different tree growth patterns for both the unfilled polyethylene and the polyethylene nanocomposites have been observed. A slower tree growth was observed in polyethylene nanocomposites. The partial discharge characteristics of unfilled and nano filled polyethylene samples during the electrical tree growth period was also studied. Decrease in PD magnitude as well as in the number of pd pulses with electrical tree growth duration in polyethylene nanocomposites has also been observed. The possible reasons for the improvement in electrical tree growth and PD resistance with the addition of nano fillers are discussed.

Crystal structure and thermal and electrical properties of the perovskite solid solution Nd1-xSrxFeO3-delta (0 <= x <= 0.4)

The crystal structure, thermal expansion and electrical conductivity of strontium-doped neodymium ferrite (Nd1-xSrxFeO3-delta where 0less than or equal toxless than or equal to0.4) were investigated. All compositions had the GdFeO3-type orthorhombic perovskite structure. The lattice parameters were determined at room temperature by X-ray powder diffraction. The orthorhombic distortion decreases with increasing Sr substitution. The pseudocubic lattice parameter shows a minimum at x=0.3. The thermal expansion curves for x=0.2-0.4 displayed rapid increase in slope at higher temperatures. The electrical conductivity increased with Sr content and temperature. The calculated activation energies for electrical conduction decreased with increasing x. The electrical conductivity can be described by the small polaron hopping mechanism. The charge compensation for divalent ion on the A-site is provided by the formation of Fe4+ ions on the B site and vacancies on the oxygen sublattice. The results indicate two defect domains: for low values of x, the predominant defect is Fe4+ ions, whereas for higher values of x, oxygen vacancies dominate. (C) 2002 Elsevier Science B.V. All rights reserved.

Crystal structure, thermal expansion and electrical conductivity of Nd0.7Sr0.3Fe1-xCoxO3 (0 <= x <= 0.8)

The crystal structure, thermal expansion and electrical conductivity of the solid solution Nd0.7Sr0.3Fe1-xCoxO3 for 0 less than or equal to x less than or equal to 0.8 were investigated. All compositions had the GdFeO3-type orthorhombic perovskite structure. The lattice parameters were determined at room temperature by X-ray powder diffraction (XRPD). The pseudo-cubic lattice constant decreased continuously with x. The average linear thermal expansion coefficient (TEC) in the temperature range from 573 to 973 K was found to increase with x. The thermal expansion curves for all values of x displayed rapid increase in slope at high temperatures. The electrical conductivity increased with x for the entire temperature range of measurement. The calculated activation energy values indicate that electrical conduction takes place primarily by the small polaron hopping mechanism. The charge compensation for the divalent ion on the A-site is provided by the formation of Fe4+ ions on the B-site (in preference to Co4+ ions) and vacancies on the oxygen sublattice for low values of x. The large increase in the conductivity with x in the range from 0.6 to 0.8 is attributed to the substitution of Fe4+ ions by Co4+ ions. The Fe site has a lower small polaron site energy than Co and hence behaves like a carrier trap, thereby drastically reducing the conductivity. The non-linear behaviour in the dependence of log sigmaT with reciprocal temperature can be attributed to the generation of additional charge carriers with increasing temperature by the charge disproportionation of Co3+ ions. (C) 2002 Elsevier Science B.V. All rights reserved.

Electrical characterization of Ba(Zr0.1Ti0.9)O-3 thin films grown by pulsed laser ablation technique

In situ annealed thin films of ferroelectric Ba(Zr0.1Ti0.9)O-3 were deposited on platinum substrates by pulsed laser ablation technique. The as grown films were polycrystalline in nature without the evidence of any secondary phases. The polarization hysteresis loop confirmed the ferroelectricity, which was also cross-checked with the capacitance-voltage characteristics. The remnant polarization was about 5.9 muC cm(-2) at room temperature and the coercive field was 45 kV. There was a slight asymmetry in the hysteresis for different polarities, which was thought to be due to the work function differences of different electrodes. The dielectric constant was about 452 and was found to exhibit low frequency dispersion that increased with frequency, This was related to the space-charge polarization. The complex impedance was plotted and this exhibited a semicircular trace, and indicated an equivalent parallel R - C circuit within the sample. This was attributed to the grain response. The DC leakage current-voltage plot was consistent with the space-charge limited conduction theory, but showed some deviation, which was explained by assuming a Poole-Frenkel type conduction to be superimposed on to the usual space-charge controlled current. (C) 2002 Elsevier Science B.V. All rights reserved.